the exchange coupling being asymmetric, e.g. by use of additional pinning, by using antiferromagnetic or ferromagnetic coupling interface

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CPC
H01F10/3268

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Parent Industries

HELECTRICITY H01Electric elements H01FMAGNETS INDUCTANCES TRANSFORMERS SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES H01F10/00Thin magnetic films

Current Industry

H01F10/3268the exchange coupling being asymmetric, e.g. by use of additional pinning, by using antiferromagnetic or ferromagnetic coupling interface

Industries

Patents Grantslast 30 patents

Information Patent Grant
Electrical offset compensating in a bridge using more than four mag...
- Patent number 11,953,565
- Issue date Apr 9, 2024
- ALLEGRO MICROSYSTEMS, LLC
- Hernán D. Romero
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetoresistive element having a nano-current-channel structure
- Patent number 11,957,063
- Issue date Apr 9, 2024
- Yimin Guo
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic heterojunction structure and method for controlling and ac...
- Patent number 11,922,986
- Issue date Mar 5, 2024
- SHAN DONG UNIVERSITY
- Shishen Yan
- G11 - INFORMATION STORAGE
Information Patent Grant
Insertion layers for perpendicularly magnetized Heusler layers with...
- Patent number 11,925,124
- Issue date Mar 5, 2024
- Samsung Electronics Co., Ltd.
- Jaewoo Jeong
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic sensor
- Patent number 11,914,008
- Issue date Feb 27, 2024
- TDK Corporation
- Keisuke Uchida
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nano-rod spin orbit coupling based magnetic random access memory wi...
- Patent number 11,818,963
- Issue date Nov 14, 2023
- Intel Corporation
- Sasikanth Manipatruni
- G11 - INFORMATION STORAGE
Information Patent Grant
Low-power terahertz magnetic nano-oscillating device
- Patent number 11,791,082
- Issue date Oct 17, 2023
- Korea University Research and Business Foundation
- Kyung-Jin Lee
- G11 - INFORMATION STORAGE
Information Patent Grant
Storage element and storage apparatus
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- Issue date Oct 3, 2023
- Sony Group Corporation
- Yutaka Higo
- G11 - INFORMATION STORAGE
Information Patent Grant
Spin wave switch and filter based on magnonic crystal
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- Issue date Jul 11, 2023
- Institute of Physics, Chinese Academy of Sciences
- Xiufeng Han
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Exchange-coupled film and magnetoresistive element and magnetic sen...
- Patent number 11,693,068
- Issue date Jul 4, 2023
- Alps Alpine Co., Ltd.
- Masamichi Saito
- G01 - MEASURING TESTING
Information Patent Grant
Magnetic memory device having a ferromagnetic element
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- Samsung Electronics Co., Ltd.
- Sang Hwan Park
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic sensor
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- Issue date May 16, 2023
- TDK Corporation
- Keisuke Uchida
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Antiferromagnet based spin orbit torque memory device
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- Issue date Apr 4, 2023
- Intel Corporation
- Chia-Ching Lin
- G11 - INFORMATION STORAGE
Information Patent Grant
Transition metal dichalcogenide based spin orbit torque memory devi...
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- Issue date Jan 17, 2023
- Intel Corporation
- Chia-Ching Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Tunable multilayer terahertz magnon generator
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- Issue date Nov 29, 2022
- MAGTERA, INC.
- Boris G. Tankhilevich
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetic sensing devices based on interlayer exchange-coupled magne...
- Patent number 11,500,042
- Issue date Nov 15, 2022
- Brown University
- Gang Xiao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Tunnel magnetoresistance effect device and magnetic device using same
- Patent number 11,476,413
- Issue date Oct 18, 2022
- Alps Alpine Co., Ltd.
- Masamichi Saito
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Storage element and storage apparatus
- Patent number 11,475,932
- Issue date Oct 18, 2022
- Sony Group Corporation
- Yutaka Higo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetic sensor device
- Patent number 11,474,168
- Issue date Oct 18, 2022
- TDK Corporation
- Naoki Ohta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetoresistive element having a giant interfacial perpendicular m...
- Patent number 11,450,467
- Issue date Sep 20, 2022
- Yimin Guo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Stacked structure, magnetoresistive effect element, magnetic head,...
- Patent number 11,422,211
- Issue date Aug 23, 2022
- TDK Corporation
- Kazuumi Inubushi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Spin-orbit-torque magnetization rotational element and spin-orbit-t...
- Patent number 11,387,407
- Issue date Jul 12, 2022
- TDK Corporation
- Tomoyuki Sasaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetic device which improves write error rate while maintaining r...
- Patent number 11,316,095
- Issue date Apr 26, 2022
- Kioxia Corporation
- Tadaaki Oikawa
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetoresistance effect element
- Patent number 11,309,115
- Issue date Apr 19, 2022
- TDK Corporation
- Katsuyuki Nakada
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Spin transfer torque MRAM with a spin torque oscillator stack and m...
- Patent number 11,309,487
- Issue date Apr 19, 2022
- SanDisk Technologies LLC
- Quang Le
- G11 - INFORMATION STORAGE
Information Patent Grant
Nano-rod spin orbit coupling based magnetic random access memory wi...
- Patent number 11,264,558
- Issue date Mar 1, 2022
- Intel Corporation
- Sasikanth Manipatruni
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Minimal thickness, low switching voltage magnetic free layers using...
- Patent number 11,264,560
- Issue date Mar 1, 2022
- Headway Technologies, Inc.
- Jodi Mari Iwata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dual tunnel magnetoresistance (TMR) element structure
- Patent number 11,217,626
- Issue date Jan 4, 2022
- ALLEGRO MICROSYSTEMS, LLC
- Paolo Campiglio
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Magnetic sensor
- Patent number 11,209,503
- Issue date Dec 28, 2021
- TDK Corporation
- Keisuke Uchida
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetic sensors with a mixed oxide passivation layer
- Patent number 11,175,358
- Issue date Nov 16, 2021
- MagArray, Inc.
- Shan Xiang Wang
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

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SPIN VALVE DEVICE AND METHOD FOR FORMING A SPIN VALVE DEVICE
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- INFINEON TECHNOLOGIES AG
- Dieter SUESS
- H01 - BASIC ELECTRIC ELEMENTS
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TRUE RANDOM NUMBER GENERATOR
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- Publication date Feb 22, 2024
- Fudan University
- Jiang XIAO
- G06 - COMPUTING CALCULATING COUNTING
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STORAGE ELEMENT AND STORAGE APPARATUS
- Publication number 20240005975
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- SONY GROUP CORPORATION
- Yutaka Higo
- G11 - INFORMATION STORAGE
Information Patent Application
FERROMAGNETIC FREE LAYER, LAMINATED STRUCURE COMPRISING THE SAME, M...
- Publication number 20230397503
- Publication date Dec 7, 2023
- SOLAR APPLIED MATERIALS TECHNOLOGY CORP.
- CHIH-WEN TANG
- C22 - METALLURGY FERROUS OR NON-FERROUS ALLOYS TREATMENT OF ALLOYS OR NON-FER...
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SPIN VALVE DEVICE WITH PRECIOUS METAL-FREE ANTIFERROMAGNET IN STABI...
- Publication number 20230314534
- Publication date Oct 5, 2023
- Infineon Technologies AG
- Klemens PRÜGL
- G11 - INFORMATION STORAGE
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MAGNETOELECTRIC SPIN-ORBIT DEVICE WITH IN-PLANE AND PERPENDICULAR M...
- Publication number 20230284538
- Publication date Sep 7, 2023
- Intel Corporation
- Punyashloka Debashis
- G11 - INFORMATION STORAGE
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MAGNETIC SENSOR
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- Publication date Aug 10, 2023
- TDK Corporation
- Keisuke UCHIDA
- H01 - BASIC ELECTRIC ELEMENTS
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MAGNETIC HETEROJUNCTION STRUCTURE AND METHOD FOR CONTROLLING AND AC...
- Publication number 20230148297
- Publication date May 11, 2023
- SHAN DONG UNIVERSITY
- Shishen Yan
- G11 - INFORMATION STORAGE
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RECONFIGURABLE PUF DEVICE BASED ON FULLY ELECTRIC FIELD-CONTROLLED...
- Publication number 20230124011
- Publication date Apr 20, 2023
- INSTITUTE OF MICROELECTRONICS OF THE CHINESE ACADEMY OF SCIENCES
- Guozhong XING
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
MAGNETORESISTIVE ELEMENT HAVING A NANO-CURRENT-CHANNEL STURCTURE
- Publication number 20230067295
- Publication date Mar 2, 2023
- YIMIN GUO
- G11 - INFORMATION STORAGE
Information Patent Application
APPARATUS AND METHOD FOR TERAHERTZ-BASED READING OF DATA RECORDED I...
- Publication number 20230008951
- Publication date Jan 12, 2023
- Magtera, Inc.
- Boris G. Tankhilevich
- G11 - INFORMATION STORAGE
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STORAGE ELEMENT AND STORAGE APPARATUS
- Publication number 20220328084
- Publication date Oct 13, 2022
- SONY GROUP CORPORATION
- Yutaka Higo
- G11 - INFORMATION STORAGE
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ELECTRICAL OFFSET COMPENSATING IN A BRIDGE USING MORE THAN FOUR MAG...
- Publication number 20220308131
- Publication date Sep 29, 2022
- ALLEGRO MICROSYSTEMS, LLC
- Hernán D. Romero
- H01 - BASIC ELECTRIC ELEMENTS
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SPIN MEMORY ENCRYPTION
- Publication number 20220230669
- Publication date Jul 21, 2022
- Colorado State University Research Foundation
- Kristen Buchanan
- G06 - COMPUTING CALCULATING COUNTING
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MAGNETORESISTIVE ELEMENT HAVING A GIANT INTERFACIAL PERPENDICULAR M...
- Publication number 20220165470
- Publication date May 26, 2022
- Yimin Guo
- H01 - BASIC ELECTRIC ELEMENTS
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NANO-ROD SPIN ORBIT COUPLING BASED MAGNETIC RANDOM ACCESS MEMORY WI...
- Publication number 20220140230
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- Intel Corporation
- Sasikanth MANIPATRUNI
- G11 - INFORMATION STORAGE
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MAGNETIC TUNNEL JUNCTION ELEMENT AND MAGNETORESISTIVE MEMORY DEVICE
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- Publication date Apr 28, 2022
- Samsung Electronics Co., Ltd.
- Yoshiaki SONOBE
- H01 - BASIC ELECTRIC ELEMENTS
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SPIN WAVE SWITCH AND FILTER BASED ON MAGNONIC CRYSTAL
- Publication number 20220122755
- Publication date Apr 21, 2022
- INSTITUTE OF PHYSICS, CHINESE ACADEMY OF SCIENCES
- Xiufeng Han
- H01 - BASIC ELECTRIC ELEMENTS
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MAGNETIC SENSOR
- Publication number 20220082641
- Publication date Mar 17, 2022
- TDK Corporation
- Keisuke UCHIDA
- H01 - BASIC ELECTRIC ELEMENTS
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MAGNETIC SENSOR DEVICE
- Publication number 20210382124
- Publication date Dec 9, 2021
- TDK Corporation
- Naoki OHTA
- G01 - MEASURING TESTING
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EXCHANGE-COUPLED FILM AND MAGNETORESISTIVE ELEMENT AND MAGNETIC SEN...
- Publication number 20210382122
- Publication date Dec 9, 2021
- ALPS ALPINE CO., LTD.
- Masamichi Saito
- G01 - MEASURING TESTING
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MAGNETIC SENSING DEVICES BASED ON INTERLAYER EXCHANGE-COUPLED MAGNE...
- Publication number 20210270914
- Publication date Sep 2, 2021
- Brown University
- Gang XIAO
- H01 - BASIC ELECTRIC ELEMENTS
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STACKED STRUCTURE, MAGNETORESISTIVE EFFECT ELEMENT, MAGNETIC HEAD,...
- Publication number 20210165058
- Publication date Jun 3, 2021
- TDK Corporation
- Kazuumi INUBUSHI
- B82 - NANO-TECHNOLOGY
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MAGNETIC DEVICE
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- Publication date Mar 11, 2021
- KIOXIA Corporation
- Tadaaki OIKAWA
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DUAL TUNNEL MAGNETORESISTANCE (TMR) ELEMENT STRUCTURE
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- ALLEGRO MICROSYSTEMS, LLC
- Paolo Campiglio
- B82 - NANO-TECHNOLOGY
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STORAGE ELEMENT AND STORAGE APPARATUS
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- SONY CORPORATION
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MAGNETIC MEMORY DEVICE
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- Samsung Electronics Co., Ltd.
- Sang Hwan Park
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Information Patent Application
Minimal Thickness, Low Switching Voltage Magnetic Free Layers Using...
- Publication number 20200403143
- Publication date Dec 24, 2020
- HEADWAY TECHNOLOGIES, INC.
- Jodi Mari Iwata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SPIN VALVE WITH BIAS ALIGNMENT
- Publication number 20200365309
- Publication date Nov 19, 2020
- ALLEGRO MICROSYSTEMS, LLC
- Rémy Lassalle-Balier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOW-POWER TERAHERTZ MAGNETIC NANO-OSCILLATING DEVICE
- Publication number 20200357556
- Publication date Nov 12, 2020
- Korea University Research and Business Foundation
- Kyung-Jin LEE
- H01 - BASIC ELECTRIC ELEMENTS

the exchange coupling being asymmetric, e.g. by use of additional pinning, by using antiferromagnetic or ferromagnetic coupling interface

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Electrical offset compensating in a bridge using more than four mag...

Magnetoresistive element having a nano-current-channel structure

Magnetic heterojunction structure and method for controlling and ac...

Insertion layers for perpendicularly magnetized Heusler layers with...

Magnetic sensor

Nano-rod spin orbit coupling based magnetic random access memory wi...

Low-power terahertz magnetic nano-oscillating device

Storage element and storage apparatus

Spin wave switch and filter based on magnonic crystal

Exchange-coupled film and magnetoresistive element and magnetic sen...

Magnetic memory device having a ferromagnetic element

Magnetic sensor

Antiferromagnet based spin orbit torque memory device

Transition metal dichalcogenide based spin orbit torque memory devi...

Tunable multilayer terahertz magnon generator

Magnetic sensing devices based on interlayer exchange-coupled magne...

Tunnel magnetoresistance effect device and magnetic device using same

Storage element and storage apparatus

Magnetic sensor device

Magnetoresistive element having a giant interfacial perpendicular m...

Stacked structure, magnetoresistive effect element, magnetic head,...

Spin-orbit-torque magnetization rotational element and spin-orbit-t...

Magnetic device which improves write error rate while maintaining r...

Magnetoresistance effect element

Spin transfer torque MRAM with a spin torque oscillator stack and m...

Nano-rod spin orbit coupling based magnetic random access memory wi...

Minimal thickness, low switching voltage magnetic free layers using...

Dual tunnel magnetoresistance (TMR) element structure

Magnetic sensor

Magnetic sensors with a mixed oxide passivation layer

Patents Applicationslast 30 patents

SPIN VALVE DEVICE AND METHOD FOR FORMING A SPIN VALVE DEVICE

TRUE RANDOM NUMBER GENERATOR

STORAGE ELEMENT AND STORAGE APPARATUS

FERROMAGNETIC FREE LAYER, LAMINATED STRUCURE COMPRISING THE SAME, M...

SPIN VALVE DEVICE WITH PRECIOUS METAL-FREE ANTIFERROMAGNET IN STABI...

MAGNETOELECTRIC SPIN-ORBIT DEVICE WITH IN-PLANE AND PERPENDICULAR M...

MAGNETIC SENSOR

MAGNETIC HETEROJUNCTION STRUCTURE AND METHOD FOR CONTROLLING AND AC...

RECONFIGURABLE PUF DEVICE BASED ON FULLY ELECTRIC FIELD-CONTROLLED...

MAGNETORESISTIVE ELEMENT HAVING A NANO-CURRENT-CHANNEL STURCTURE

APPARATUS AND METHOD FOR TERAHERTZ-BASED READING OF DATA RECORDED I...

STORAGE ELEMENT AND STORAGE APPARATUS

ELECTRICAL OFFSET COMPENSATING IN A BRIDGE USING MORE THAN FOUR MAG...

SPIN MEMORY ENCRYPTION

MAGNETORESISTIVE ELEMENT HAVING A GIANT INTERFACIAL PERPENDICULAR M...

NANO-ROD SPIN ORBIT COUPLING BASED MAGNETIC RANDOM ACCESS MEMORY WI...

MAGNETIC TUNNEL JUNCTION ELEMENT AND MAGNETORESISTIVE MEMORY DEVICE

SPIN WAVE SWITCH AND FILTER BASED ON MAGNONIC CRYSTAL

MAGNETIC SENSOR

MAGNETIC SENSOR DEVICE

EXCHANGE-COUPLED FILM AND MAGNETORESISTIVE ELEMENT AND MAGNETIC SEN...

MAGNETIC SENSING DEVICES BASED ON INTERLAYER EXCHANGE-COUPLED MAGNE...

STACKED STRUCTURE, MAGNETORESISTIVE EFFECT ELEMENT, MAGNETIC HEAD,...

MAGNETIC DEVICE

DUAL TUNNEL MAGNETORESISTANCE (TMR) ELEMENT STRUCTURE

STORAGE ELEMENT AND STORAGE APPARATUS

MAGNETIC MEMORY DEVICE

Minimal Thickness, Low Switching Voltage Magnetic Free Layers Using...

SPIN VALVE WITH BIAS ALIGNMENT

LOW-POWER TERAHERTZ MAGNETIC NANO-OSCILLATING DEVICE