the exchange coupling being symmetric

Industry

CPC
H01F10/3263

This industry / category may be too specific. Please go to a parent level for more data

Parent Industries

HELECTRICITY H01Electric elements H01FMAGNETS INDUCTANCES TRANSFORMERS SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES H01F10/00Thin magnetic films

Current Industry

H01F10/3263the exchange coupling being symmetric

Industries

Please log in for detailed analytics

Patents Grantslast 30 patents

Information Patent Grant
Magnetoresistive sensor and fabrication method for a magnetoresisti...
- Patent number 11,892,526
- Issue date Feb 6, 2024
- Infineon Technologies AG
- Bernhard Endres
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetic elements of amorphous based dual free layer structures and...
- Patent number 11,776,725
- Issue date Oct 3, 2023
- Western Digital Technologies, Inc.
- Zhitao Diao
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic elements of amorphous based dual free layer structures and...
- Patent number 11,430,592
- Issue date Aug 30, 2022
- Western Digital Technologies, Inc.
- Zhitao Diao
- G11 - INFORMATION STORAGE
Information Patent Grant
Nonvolatile magnetic memory device
- Patent number 10,886,456
- Issue date Jan 5, 2021
- Sony Corporation
- Mitsuharu Shoji
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Magnetoresistance element with extended linear response to magnetic...
- Patent number 10,840,001
- Issue date Nov 17, 2020
- ALLEGRO MICROSYSTEMS, LLC
- Rémy Lassalle-Balier
- G01 - MEASURING TESTING
Information Patent Grant
Spin valve with bias alignment
- Patent number 10,777,345
- Issue date Sep 15, 2020
- ALLEGRO MICROSYSTEMS, LLC
- Rémy Lassalle-Balier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetoresistance element with improved response to magnetic fields
- Patent number 10,347,277
- Issue date Jul 9, 2019
- ALLEGRO MICROSYSTEMS, LLC
- Paolo Campiglio
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Oscillator and calculating device
- Patent number 10,230,330
- Issue date Mar 12, 2019
- Kabushiki Kaisha Toshiba
- Kiwamu Kudo
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Nonvolatile magnetic memory device
- Patent number 10,128,432
- Issue date Nov 13, 2018
- Sony Corporation
- Mitsuharu Shoji
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Magnetoresistance element with improved response to magnetic fields
- Patent number 9,922,673
- Issue date Mar 20, 2018
- Allegro Microsystems, LLC
- Paolo Campiglio
- G11 - INFORMATION STORAGE
Information Patent Grant
Spin valve magnetoresistance element with improved response to magn...
- Patent number 9,812,637
- Issue date Nov 7, 2017
- Allegro Microsystems, LLC
- Claude Fermon
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Magnetoresistance element with an improved seed layer to promote an...
- Patent number 9,804,234
- Issue date Oct 31, 2017
- Allegro Microsystems, LLC
- Cyril Dressler
- G11 - INFORMATION STORAGE
Information Patent Grant
Circuits and devices based on spin hall effect to apply a spin tran...
- Patent number 9,691,458
- Issue date Jun 27, 2017
- Cornell University
- Daniel C. Ralph
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetoresistance element with improved response to magnetic fields
- Patent number 9,529,060
- Issue date Dec 27, 2016
- Allegro Microsystems, LLC
- Claude Fermon
- G11 - INFORMATION STORAGE
Information Patent Grant
Nonvolatile magnetic memory device
- Patent number 9,508,919
- Issue date Nov 29, 2016
- Sony Corporation
- Mitsuharu Shoji
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Storage element, method for manufacturing storage element, and memory
- Patent number 9,472,751
- Issue date Oct 18, 2016
- Sony Corporation
- Hiroyuki Uchida
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Method and system for providing dual magnetic tunneling junctions u...
- Patent number 9,105,830
- Issue date Aug 11, 2015
- Samsung Electronics Co., Ltd.
- Alexey Vasilyevitch Khvalkovskiy
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetoresistive element
- Patent number 9,099,188
- Issue date Aug 4, 2015
- Yimin Guo
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic device having a magnetic material in a contact structure c...
- Patent number 9,087,633
- Issue date Jul 21, 2015
- Samsung Electronics Co., Ltd.
- Alexey Vasilyevitch Khvalkovskiy
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetoresistive device and a writing method for a magnetoresistive...
- Patent number 9,058,885
- Issue date Jun 16, 2015
- Agency for Science, Technology and Research
- Yuanhong Luo
- G11 - INFORMATION STORAGE
Information Patent Grant
Self-referenced MRAM cell with optimized reliability
- Patent number 8,885,397
- Issue date Nov 11, 2014
- Crocus Technology S.A.
- Ioan Lucian Prejbeanu
- G11 - INFORMATION STORAGE
Information Patent Grant
Spin-current switched magnetic memory element suitable for circuit...
- Patent number 8,860,105
- Issue date Oct 14, 2014
- International Business Machines Corporation
- Jonathan Zanhong Sun
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Magnetic domain wall shift register memory device readout
- Patent number 8,772,889
- Issue date Jul 8, 2014
- International Business Machines Corporation
- Michael C. Gaidis
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Magnetoresistive-based mixed anisotropy high field sensor
- Patent number 8,773,821
- Issue date Jul 8, 2014
- NVE Corporation
- Joseph E. Davies
- G01 - MEASURING TESTING
Information Patent Grant
Magnetoresistive element and magnetic random access memory
- Patent number 8,750,030
- Issue date Jun 10, 2014
- Kabushiki Kaisha Toshiba
- Koji Ueda
- G11 - INFORMATION STORAGE
Information Patent Grant
High-frequency magnetic field generation element and magnetic head
- Patent number 8,724,261
- Issue date May 13, 2014
- Kabushiki Kaisha Toshiba
- Hirofumi Suto
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic stack having assist layers
- Patent number 8,670,271
- Issue date Mar 11, 2014
- Seagate Technology LLC
- Yuankai Zheng
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Nonvolatile magnetic memory device
- Patent number 8,659,102
- Issue date Feb 25, 2014
- Sony Corporation
- Mitsuharu Shoji
- B82 - NANO-TECHNOLOGY
Information Patent Grant
High GMR structure with low drive fields
- Patent number 8,619,467
- Issue date Dec 31, 2013
- Integrated Magnetoelectronics
- E. James Torok
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Magnetoresistive element
- Patent number 8,604,569
- Issue date Dec 10, 2013
- Kabushiki Kaisha Toshiba
- Keiji Hosotani
- B82 - NANO-TECHNOLOGY

Patents Applicationslast 30 patents

Information Patent Application
MAGNETIC ELEMENTS OF AMORPHOUS BASED DUAL FREE LAYER STRUCTURES AND...
- Publication number 20220367099
- Publication date Nov 17, 2022
- Western Digital Technologies, Inc.
- Zhitao DIAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Magnetic Elements of Amorphous Based Dual Free Layer Structures and...
- Publication number 20220093305
- Publication date Mar 24, 2022
- Western Digital Technologies, Inc.
- Zhitao DIAO
- G11 - INFORMATION STORAGE
Information Patent Application
SPIN VALVE WITH BIAS ALIGNMENT
- Publication number 20200365309
- Publication date Nov 19, 2020
- ALLEGRO MICROSYSTEMS, LLC
- Rémy Lassalle-Balier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Spin Valve With Bias Alignment
- Publication number 20190259520
- Publication date Aug 22, 2019
- Allegro Microsystems, LLC
- Rémy Lassalle-Balier
- G01 - MEASURING TESTING
Information Patent Application
NONVOLATILE MAGNETIC MEMORY DEVICE
- Publication number 20190051817
- Publication date Feb 14, 2019
- SONY CORPORATION
- Mitsuharu Shoji
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Magnetoresistance Element with Improved Response to Magnetic Fields
- Publication number 20180158475
- Publication date Jun 7, 2018
- Allegro Microsystems, LLC
- Paolo Campiglio
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETORESISTIVE ELEMENT
- Publication number 20140254252
- Publication date Sep 11, 2014
- T3MEMORY, INC.
- YIMIN GUO
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETIC DOMAIN WALL SHIFT REGISTER MEMORY DEVICE READOUT
- Publication number 20140138610
- Publication date May 22, 2014
- International Business Machines Corporation
- Michael C. Gaidis
- B82 - NANO-TECHNOLOGY
Information Patent Application
MAGNETIC DOMAIN WALL SHIFT REGISTER MEMORY DEVICE READOUT
- Publication number 20140141530
- Publication date May 22, 2014
- International Business Machines Corporation
- Michael C. Gaidis
- B82 - NANO-TECHNOLOGY
Information Patent Application
NONVOLATILE MAGNETIC MEMORY DEVICE
- Publication number 20140131822
- Publication date May 15, 2014
- SONY CORPORATION
- Mitsuharu Shoji
- B82 - NANO-TECHNOLOGY
Information Patent Application
MAGNETORESISTIVE-BASED MIXED ANISOTROPY HIGH FIELD SENSOR
- Publication number 20140098443
- Publication date Apr 10, 2014
- NVE Corporation
- Joseph E. Davies
- G01 - MEASURING TESTING
Information Patent Application
ELECTRONIC COMPONENT, METHODS FOR MANUFACTURING THE SAME AND USE OF...
- Publication number 20140070168
- Publication date Mar 13, 2014
- UNIVERSITE PARIS-SUD
- Pierre Seneor
- B82 - NANO-TECHNOLOGY
Information Patent Application
METHOD AND SYSTEM FOR PROVIDING DUAL MAGNETIC TUNNELING JUNCTIONS U...
- Publication number 20140056061
- Publication date Feb 27, 2014
- Alexey Vasilyevitch Khvalkovskiy
- G11 - INFORMATION STORAGE
Information Patent Application
SPIN-CURRENT SWITCHED MAGNETIC MEMORY ELEMENT SUITABLE FOR CIRCUIT...
- Publication number 20140008743
- Publication date Jan 9, 2014
- International Business Machines Corporation
- Jonathan Zanhong Sun
- B82 - NANO-TECHNOLOGY
Information Patent Application
STORAGE ELEMENT, METHOD FOR MANUFACTURING STORAGE ELEMENT, AND MEMORY
- Publication number 20130302913
- Publication date Nov 14, 2013
- Hiroyuki Uchida
- B82 - NANO-TECHNOLOGY
Information Patent Application
MAGNETIC STACK HAVING ASSIST LAYERS
- Publication number 20130228884
- Publication date Sep 5, 2013
- SEAGATE TECHNOLOGY LLC
- Yuankai Zheng
- B82 - NANO-TECHNOLOGY
Information Patent Application
MAGNETIC DEVICE HAVING A MAGNETIC MATERIAL IN A CONTACT STRUCTURE C...
- Publication number 20130161768
- Publication date Jun 27, 2013
- Samsung Electronics Co., Ltd.
- Alexey Vasilyevitch Khvalkovskiy
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETORESISTIVE DEVICE AND A WRITING METHOD FOR A MAGNETORESISTIVE...
- Publication number 20130148418
- Publication date Jun 13, 2013
- Agency for Science, Technology and Research
- Yuanhong LUO
- G11 - INFORMATION STORAGE
Information Patent Application
SELF-REFERENCED MRAM CELL WITH OPTIMIZED RELIABILITY
- Publication number 20130128659
- Publication date May 23, 2013
- CROCUS TECHNOLOGY SA
- Ioan Lucian Prejbeanu
- G11 - INFORMATION STORAGE
Information Patent Application
HIGH-FREQUENCY MAGNETIC FIELD GENERATION ELEMENT AND MAGNETIC HEAD
- Publication number 20130120875
- Publication date May 16, 2013
- Hirofumi SUTO
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETORESISTIVE ELEMENT HAVING A MAGNETIC COMPOUND, MAGNETIC MEMOR...
- Publication number 20120206838
- Publication date Aug 16, 2012
- Kabushiki Kaisha Toshiba
- Yoshihiko Fuji
- G01 - MEASURING TESTING
Information Patent Application
MAGNETORESISTIVE ELEMENT AND MAGNETIC RANDOM ACCESS MEMORY
- Publication number 20120069642
- Publication date Mar 22, 2012
- Kabushiki Kaisha Toshiba
- Koji Ueda
- G11 - INFORMATION STORAGE
Information Patent Application
METHOD AND SYSTEM FOR PROVIDING MAGNETIC TUNNELING JUNCTION ELEMENT...
- Publication number 20120012953
- Publication date Jan 19, 2012
- GRANDIS, INC.
- Daniel Lottis
- G11 - INFORMATION STORAGE
Information Patent Application
STORAGE ELEMENT, METHOD FOR MANUFACTURING STORAGE ELEMENT, AND MEMORY
- Publication number 20110316103
- Publication date Dec 29, 2011
- SONY CORPORATION
- Hiroyuki Uchida
- G11 - INFORMATION STORAGE
Information Patent Application
METHOD OF MANUFACTURING MAGNETORESISTIVE ELEMENT HAVING A PAIR OF F...
- Publication number 20110232079
- Publication date Sep 29, 2011
- TDK Corporation
- Daisuke MIYAUCHI
- G01 - MEASURING TESTING
Information Patent Application
MAGNETIC MEMORY DEVICES
- Publication number 20110233698
- Publication date Sep 29, 2011
- SAMSUNG ELECTRONICS CO., LTD.
- Ki Joon KIM
- B82 - NANO-TECHNOLOGY
Information Patent Application
HIGH GMR STRUCTURE WITH LOW DRIVE FIELDS
- Publication number 20110211388
- Publication date Sep 1, 2011
- INTEGRATED MAGNETOELECTRONICS CORP.
- E. James Torok
- G11 - INFORMATION STORAGE
Information Patent Application
Magnetic shielding in magnetic multilayer structures
- Publication number 20110210410
- Publication date Sep 1, 2011
- Grandis Inc.
- Yunfei Ding
- G11 - INFORMATION STORAGE
Information Patent Application
SPIN-CURRENT SWITCHED MAGNETIC MEMORY ELEMENT SUITABLE FOR CIRCUIT...
- Publication number 20110147866
- Publication date Jun 23, 2011
- International Business Machines Corporation
- Jonathan Zanhong Sun
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETIC HEAD HAVING A MULTILAYER MAGNETIC FILM AND METHOD FOR PROD...
- Publication number 20110116184
- Publication date May 19, 2011
- Hitachi Global Storage Technologies Netherlands B.V.
- Kan Yasui
- G01 - MEASURING TESTING

the exchange coupling being symmetric

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Magnetoresistive sensor and fabrication method for a magnetoresisti...

Magnetic elements of amorphous based dual free layer structures and...

Magnetic elements of amorphous based dual free layer structures and...

Nonvolatile magnetic memory device

Magnetoresistance element with extended linear response to magnetic...

Spin valve with bias alignment

Magnetoresistance element with improved response to magnetic fields

Oscillator and calculating device

Nonvolatile magnetic memory device

Magnetoresistance element with improved response to magnetic fields

Spin valve magnetoresistance element with improved response to magn...

Magnetoresistance element with an improved seed layer to promote an...

Circuits and devices based on spin hall effect to apply a spin tran...

Magnetoresistance element with improved response to magnetic fields

Nonvolatile magnetic memory device

Storage element, method for manufacturing storage element, and memory

Method and system for providing dual magnetic tunneling junctions u...

Magnetoresistive element

Magnetic device having a magnetic material in a contact structure c...

Magnetoresistive device and a writing method for a magnetoresistive...

Self-referenced MRAM cell with optimized reliability

Spin-current switched magnetic memory element suitable for circuit...

Magnetic domain wall shift register memory device readout

Magnetoresistive-based mixed anisotropy high field sensor

Magnetoresistive element and magnetic random access memory

High-frequency magnetic field generation element and magnetic head

Magnetic stack having assist layers

Nonvolatile magnetic memory device

High GMR structure with low drive fields

Magnetoresistive element

Patents Applicationslast 30 patents

MAGNETIC ELEMENTS OF AMORPHOUS BASED DUAL FREE LAYER STRUCTURES AND...

Magnetic Elements of Amorphous Based Dual Free Layer Structures and...

SPIN VALVE WITH BIAS ALIGNMENT

Spin Valve With Bias Alignment

NONVOLATILE MAGNETIC MEMORY DEVICE

Magnetoresistance Element with Improved Response to Magnetic Fields

MAGNETORESISTIVE ELEMENT

MAGNETIC DOMAIN WALL SHIFT REGISTER MEMORY DEVICE READOUT

MAGNETIC DOMAIN WALL SHIFT REGISTER MEMORY DEVICE READOUT

NONVOLATILE MAGNETIC MEMORY DEVICE

MAGNETORESISTIVE-BASED MIXED ANISOTROPY HIGH FIELD SENSOR

ELECTRONIC COMPONENT, METHODS FOR MANUFACTURING THE SAME AND USE OF...

METHOD AND SYSTEM FOR PROVIDING DUAL MAGNETIC TUNNELING JUNCTIONS U...

SPIN-CURRENT SWITCHED MAGNETIC MEMORY ELEMENT SUITABLE FOR CIRCUIT...

STORAGE ELEMENT, METHOD FOR MANUFACTURING STORAGE ELEMENT, AND MEMORY

MAGNETIC STACK HAVING ASSIST LAYERS

MAGNETIC DEVICE HAVING A MAGNETIC MATERIAL IN A CONTACT STRUCTURE C...

MAGNETORESISTIVE DEVICE AND A WRITING METHOD FOR A MAGNETORESISTIVE...

SELF-REFERENCED MRAM CELL WITH OPTIMIZED RELIABILITY

HIGH-FREQUENCY MAGNETIC FIELD GENERATION ELEMENT AND MAGNETIC HEAD

MAGNETORESISTIVE ELEMENT HAVING A MAGNETIC COMPOUND, MAGNETIC MEMOR...

MAGNETORESISTIVE ELEMENT AND MAGNETIC RANDOM ACCESS MEMORY

METHOD AND SYSTEM FOR PROVIDING MAGNETIC TUNNELING JUNCTION ELEMENT...

STORAGE ELEMENT, METHOD FOR MANUFACTURING STORAGE ELEMENT, AND MEMORY

METHOD OF MANUFACTURING MAGNETORESISTIVE ELEMENT HAVING A PAIR OF F...

MAGNETIC MEMORY DEVICES

HIGH GMR STRUCTURE WITH LOW DRIVE FIELDS

Magnetic shielding in magnetic multilayer structures

SPIN-CURRENT SWITCHED MAGNETIC MEMORY ELEMENT SUITABLE FOR CIRCUIT...

MAGNETIC HEAD HAVING A MULTILAYER MAGNETIC FILM AND METHOD FOR PROD...