the insulating material containing nitrogen

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H01L29/518

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

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H01L29/518the insulating material containing nitrogen

Industries

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Patents Grantslast 30 patents

Information Patent Grant
FinFET device and method of forming and monitoring quality of the same
- Patent number 12,237,417
- Issue date Feb 25, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chang-Yin Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 12,237,424
- Issue date Feb 25, 2025
- Semiconductor Energy Laboratory Co., Ltd.
- Shunpei Yamazaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ferroelectric memory device, manufacturing method of the ferroelect...
- Patent number 12,238,932
- Issue date Feb 25, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Rainer Yen-Chieh Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for preparing recessed gate structure with protection layer
- Patent number 12,211,905
- Issue date Jan 28, 2025
- NANYA TECHNOLOGY CORPORATION
- Kuo-Hui Su
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High-voltage semiconductor device structures
- Patent number 12,205,949
- Issue date Jan 21, 2025
- GLOBALFOUNDRIES U.S. Inc.
- Zhenyu Hu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a semiconductor device and a semiconductor...
- Patent number 12,191,304
- Issue date Jan 7, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Tung Ying Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure of memory device having floating gate with protruding str...
- Patent number 12,185,532
- Issue date Dec 31, 2024
- United Microelectronics Corp.
- Liang Yi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin-based field effect transistors
- Patent number 12,154,903
- Issue date Nov 26, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Matthias Passlack
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Peripheral circuitry under array memory device and method of fabric...
- Patent number 12,137,566
- Issue date Nov 5, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Sheng-Chih Lai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for forming recesses in source/drain regions and devices fo...
- Patent number 12,132,089
- Issue date Oct 29, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Yu-Lien Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory array
- Patent number 12,133,390
- Issue date Oct 29, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chao-I Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate spacer structures and methods for forming the same
- Patent number 12,119,390
- Issue date Oct 15, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chun Hsiung Tsai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor arrangement and method of manufacture
- Patent number 12,119,266
- Issue date Oct 15, 2024
- Taiwan Semiconductor Manufacturing Company Limited
- Kuo-Cheng Ching
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Strain enhanced SiC power semiconductor device and method of manufa...
- Patent number 12,113,131
- Issue date Oct 8, 2024
- HITACHI ENERGY LTD
- Stephan Wirths
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure, HEMT structure and method of forming the same
- Patent number 12,107,156
- Issue date Oct 1, 2024
- Taiwan Semiconductor Manufacturing Company Ltd.
- Yao-Chung Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Amorphous silicon-based scavenging and sealing EOT
- Patent number 12,100,595
- Issue date Sep 24, 2024
- Applied Materials, Inc.
- Yong Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Arsenic-doped epitaxial source/drain regions for NMOS
- Patent number 12,094,881
- Issue date Sep 17, 2024
- Intel Corporation
- Anand Murthy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Recessed gate strcutre with protection layer
- Patent number 12,080,773
- Issue date Sep 3, 2024
- NANYA TECHNOLOGY CORPORATION
- Kuo-Hui Su
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ferroelectric memory device
- Patent number 12,051,751
- Issue date Jul 30, 2024
- SK hynix Inc.
- Hyangkeun Yoo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
PMOS high-k metal gates
- Patent number 12,051,734
- Issue date Jul 30, 2024
- Applied Materials, Inc.
- Srinivas Gandikota
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench gate trench field plate vertical MOSFET
- Patent number 12,034,074
- Issue date Jul 9, 2024
- Texas Instruments Incorporated
- Marie Denison
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing semiconductor device
- Patent number 12,033,867
- Issue date Jul 9, 2024
- Semiconductor Energy Laboratory Co., Ltd.
- Shunpei Yamazaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having a necked semiconductor body and method...
- Patent number 12,015,087
- Issue date Jun 18, 2024
- Intel Corporation
- Bernhard Sell
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor power device and method for producing same
- Patent number 12,009,213
- Issue date Jun 11, 2024
- Rohm Co., Ltd.
- Yuki Nakano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory transistor with multiple charge storing layers and a high wo...
- Patent number 12,009,401
- Issue date Jun 11, 2024
- LONGITUDE FLASH MEMORY SOLUTIONS LTD.
- Igor Polishchuk
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor device and method of manufacturing the same
- Patent number 11,990,527
- Issue date May 21, 2024
- Hyundai Motor Company
- Junghee Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating memory device
- Patent number 11,991,882
- Issue date May 21, 2024
- Macronix International Co., Ltd.
- Yao-An Chung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Display device and method for making the same
- Patent number 11,984,451
- Issue date May 14, 2024
- Innolux Corporation
- Kuan-feng Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Partial metal grain size control to improve CMP loading effect
- Patent number 11,978,781
- Issue date May 7, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Anhao Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Wide band gap semiconductor device with surface insulating film
- Patent number 11,967,627
- Issue date Apr 23, 2024
- ROHM Co, Ltd.
- Yuki Nakano
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
TERMINAL STRUCTURE WITH OPTIMIZED RELIABILITY FOR POWER DEVICE, PRE...
- Publication number 20250072095
- Publication date Feb 27, 2025
- Huahong ZealCore Electronics Technology Co.,Ltd
- Yimin WAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FABRICATING A SEMICONDUCTOR DEVICE
- Publication number 20250054766
- Publication date Feb 13, 2025
- Infineon Technologies Austria AG
- Clemens Ostermaier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Gate Spacer Structures And Methods For Forming The Same
- Publication number 20250040218
- Publication date Jan 30, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chun Hsiung TSAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR ARRANGEMENT AND METHOD OF MANUFACTURE
- Publication number 20250040233
- Publication date Jan 30, 2025
- Taiwan Semiconductor Manufacturing Company Limited
- Kuo-Cheng CHING
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE DEVICE
- Publication number 20250006814
- Publication date Jan 2, 2025
- INFINEON TECHNOLOGIES AG
- Wolfgang LEHNERT
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
- Publication number 20240420967
- Publication date Dec 19, 2024
- Semiconductor Energy Laboratory Co., Ltd.
- Shunpei YAMAZAKI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Fin-Based Field Effect Transistors
- Publication number 20240395818
- Publication date Nov 28, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Matthias PASSLACK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20240395919
- Publication date Nov 28, 2024
- Kabushiki Kaisha Toshiba
- Jumpei TAJIMA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PERIPHERAL CIRCUITRY UNDER ARRAY MEMORY DEVICE AND METHOD OF FABRIC...
- Publication number 20240397724
- Publication date Nov 28, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Sheng-Chih LAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CAP FOR GATE STACK OF MULTIGATE DEVICE
- Publication number 20240387688
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chih-Wei Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY DEVICE AND METHOD OF FORMING THE SAME
- Publication number 20240381653
- Publication date Nov 14, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chao-I Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POWER MOSFET WITH REDUCED CURRENT LEAKAGE AND METHOD OF FABRICATING...
- Publication number 20240379741
- Publication date Nov 14, 2024
- STMicroelectronics Pte Ltd
- Yean Ching YONG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONTACT OVER ACTIVE GATE STRUCTURES WITH ETCH STOP LAYERS FOR ADVAN...
- Publication number 20240347465
- Publication date Oct 17, 2024
- Intel Corporation
- Atul MADHAVAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY TRANSISTOR WITH MULTIPLE CHARGE STORING LAYERS AND A HIGH WO...
- Publication number 20240332385
- Publication date Oct 3, 2024
- LONGITUDE FLASH MEMORY SOLUTIONS LTD.
- Igor Polishchuk
- B82 - NANO-TECHNOLOGY
Information Patent Application
SEMICONDUCTOR POWER DEVICE AND METHOD FOR PRODUCING SAME
- Publication number 20240304447
- Publication date Sep 12, 2024
- Rohm Co., Ltd.
- Yuki Nakano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELECTIVE SIN CAPPING ON METAL GATE FOR METAL OXIDATION PREVENTION
- Publication number 20240304679
- Publication date Sep 12, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Pei-Yu Chou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRENCH GATE TRENCH FIELD PLATE VERTICAL MOSFET
- Publication number 20240304719
- Publication date Sep 12, 2024
- TEXAS INSTRUMENTS INCORPORATED
- Marie DENISON
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
- Publication number 20240282833
- Publication date Aug 22, 2024
- Samsung Electronics Co., Ltd.
- Sanghoon UHM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR PREPARING RECESSED GATE STRUCTURE WITH PROTECTION LAYER
- Publication number 20240258381
- Publication date Aug 1, 2024
- NANYA TECHNOLOGY CORPORATION
- KUO-HUI SU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ELECTRONIC DEVICE
- Publication number 20240258324
- Publication date Aug 1, 2024
- InnoLux Corporation
- Kuan-feng LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SYNAPSE DEVICE, MANUFACTURING METHOD THEREOF, AND NEUROMORPHIC DEVI...
- Publication number 20240234584
- Publication date Jul 11, 2024
- SK HYNIX INC.
- Yang Kyu CHOI
- G11 - INFORMATION STORAGE
Information Patent Application
WIDE BAND GAP SEMICONDUCTOR DEVICE WITH SURFACE INSULATING FILM
- Publication number 20240234529
- Publication date Jul 11, 2024
- ROHM CO., LTD.
- Yuki Nakano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE HAVING A NECKED SEMICONDUCTOR BODY AND METHOD...
- Publication number 20240222509
- Publication date Jul 4, 2024
- Intel Corporation
- Bernhard SELL
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CAPACITOR, SEMICONDUCTOR DEVICE INCLUDING THE SAME AND ELECTRONIC A...
- Publication number 20240213303
- Publication date Jun 27, 2024
- Samsung Electronics Co., Ltd.
- Boeun PARK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME
- Publication number 20240213342
- Publication date Jun 27, 2024
- Samsung Electronics Co., Ltd.
- Junghwan HUH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METAL OXIDE SEMICONDUCTOR HAVING EPITAXIAL SOURCE DRAIN REGIONS AND...
- Publication number 20240204102
- Publication date Jun 20, 2024
- SONY GROUP CORPORATION
- Yasushi Tateshita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
APPARATUSES INCLUDING INSULATIVE STRUCTURES OF STACK STRUCTURES HAV...
- Publication number 20240196614
- Publication date Jun 13, 2024
- Lodestar Licensing Group LLC
- Srikant Jayanti
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR MEMORY AND METHOD OF MANUFACTURING THE SAME
- Publication number 20240188307
- Publication date Jun 6, 2024
- KIOXIA Corporation
- Masahiro KIYOTOSHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20240170548
- Publication date May 23, 2024
- RENESAS ELECTRONICS CORPORATION
- Hiroya SHIMOYAMA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE HAVING A PROTRUSION PROJECTION FORMED UNDER A...
- Publication number 20240170558
- Publication date May 23, 2024
- Rohm Co., Ltd.
- Keiji OKUMURA
- H01 - BASIC ELECTRIC ELEMENTS

the insulating material containing nitrogen

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

FinFET device and method of forming and monitoring quality of the same

Semiconductor device

Ferroelectric memory device, manufacturing method of the ferroelect...

Method for preparing recessed gate structure with protection layer

High-voltage semiconductor device structures

Method of manufacturing a semiconductor device and a semiconductor...

Structure of memory device having floating gate with protruding str...

Fin-based field effect transistors

Peripheral circuitry under array memory device and method of fabric...

Methods for forming recesses in source/drain regions and devices fo...

Memory array

Gate spacer structures and methods for forming the same

Semiconductor arrangement and method of manufacture

Strain enhanced SiC power semiconductor device and method of manufa...

Semiconductor structure, HEMT structure and method of forming the same

Amorphous silicon-based scavenging and sealing EOT

Arsenic-doped epitaxial source/drain regions for NMOS

Recessed gate strcutre with protection layer

Ferroelectric memory device

PMOS high-k metal gates

Trench gate trench field plate vertical MOSFET

Method for manufacturing semiconductor device

Semiconductor device having a necked semiconductor body and method...

Semiconductor power device and method for producing same

Memory transistor with multiple charge storing layers and a high wo...

Semiconductor device and method of manufacturing the same

Method for fabricating memory device

Display device and method for making the same

Partial metal grain size control to improve CMP loading effect

Wide band gap semiconductor device with surface insulating film

Patents Applicationslast 30 patents

TERMINAL STRUCTURE WITH OPTIMIZED RELIABILITY FOR POWER DEVICE, PRE...

METHOD FOR FABRICATING A SEMICONDUCTOR DEVICE

Gate Spacer Structures And Methods For Forming The Same

SEMICONDUCTOR ARRANGEMENT AND METHOD OF MANUFACTURE

SILICON CARBIDE DEVICE

METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

Fin-Based Field Effect Transistors

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

PERIPHERAL CIRCUITRY UNDER ARRAY MEMORY DEVICE AND METHOD OF FABRIC...

CAP FOR GATE STACK OF MULTIGATE DEVICE

MEMORY DEVICE AND METHOD OF FORMING THE SAME

POWER MOSFET WITH REDUCED CURRENT LEAKAGE AND METHOD OF FABRICATING...

CONTACT OVER ACTIVE GATE STRUCTURES WITH ETCH STOP LAYERS FOR ADVAN...

MEMORY TRANSISTOR WITH MULTIPLE CHARGE STORING LAYERS AND A HIGH WO...

SEMICONDUCTOR POWER DEVICE AND METHOD FOR PRODUCING SAME

SELECTIVE SIN CAPPING ON METAL GATE FOR METAL OXIDATION PREVENTION

TRENCH GATE TRENCH FIELD PLATE VERTICAL MOSFET

SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

METHOD FOR PREPARING RECESSED GATE STRUCTURE WITH PROTECTION LAYER

ELECTRONIC DEVICE

SYNAPSE DEVICE, MANUFACTURING METHOD THEREOF, AND NEUROMORPHIC DEVI...

WIDE BAND GAP SEMICONDUCTOR DEVICE WITH SURFACE INSULATING FILM

SEMICONDUCTOR DEVICE HAVING A NECKED SEMICONDUCTOR BODY AND METHOD...

CAPACITOR, SEMICONDUCTOR DEVICE INCLUDING THE SAME AND ELECTRONIC A...

SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME

METAL OXIDE SEMICONDUCTOR HAVING EPITAXIAL SOURCE DRAIN REGIONS AND...

APPARATUSES INCLUDING INSULATIVE STRUCTURES OF STACK STRUCTURES HAV...

SEMICONDUCTOR MEMORY AND METHOD OF MANUFACTURING THE SAME

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

SEMICONDUCTOR DEVICE HAVING A PROTRUSION PROJECTION FORMED UNDER A...