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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

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H01L21/02205the layer being characterised by the precursor material for deposition

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Patents Grantslast 30 patents

Information Patent Grant
Methods for stabilization of self-assembled monolayers (SAMs) using...
- Patent number 12,290,835
- Issue date May 6, 2025
- Tokyo Electron Limited
- Omid Zandi
- B05 - SPRAYING OR ATOMISING IN GENERAL APPLYING LIQUIDS OR OTHER FLUENT MATER...
Information Patent Grant
Tunability of dopant concentration in thin hafnium oxide films
- Patent number 12,261,037
- Issue date Mar 25, 2025
- Applied Materials, Inc.
- Golnaz Karbasian
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Treatments to improve device performance
- Patent number 12,249,511
- Issue date Mar 11, 2025
- Applied Materials, Inc.
- Steven C. H. Hung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for depositing gap filling fluid
- Patent number 12,211,742
- Issue date Jan 28, 2025
- ASM IP Holding B.V.
- Timothee Blanquart
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Information Patent Grant
Flowable chemical vapor deposition of metal oxides
- Patent number 12,211,736
- Issue date Jan 28, 2025
- Applied Materials, Inc.
- Hurshvardhan Srivastava
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Information Patent Grant
Deposition of organic films
- Patent number 12,205,820
- Issue date Jan 21, 2025
- ASM IP Holding B.V.
- Eva E. Tois
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Information Patent Grant
Carbon gap fill processes
- Patent number 12,198,928
- Issue date Jan 14, 2025
- Applied Materials, Inc.
- Abhijeet S. Bagal
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dual RF for controllable film deposition
- Patent number 12,191,115
- Issue date Jan 7, 2025
- Applied Materials, Inc.
- Venkata Sharat Chandra Parimi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing semiconductor device, and film-forming device
- Patent number 12,173,401
- Issue date Dec 24, 2024
- Tokyo Electron Limited
- Zeyuan Ni
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Information Patent Grant
Method of manufacturing gate structure and method of manufacturing...
- Patent number 12,170,280
- Issue date Dec 17, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Ji-Cheng Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for forming a semiconductor device structure and related se...
- Patent number 12,166,099
- Issue date Dec 10, 2024
- ASM IP Holding B.V.
- Chiyu Zhu
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Information Patent Grant
Pre-deposition treatment for FET technology and devices formed thereby
- Patent number 12,142,531
- Issue date Nov 12, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Cheng-Yen Tsai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
PEALD nitride films
- Patent number 12,119,221
- Issue date Oct 15, 2024
- Applied Materials, Inc.
- Hanhong Chen
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Information Patent Grant
Methods for filling a gap feature on a substrate surface and relate...
- Patent number 12,119,220
- Issue date Oct 15, 2024
- ASM IP Holding B.V.
- Leo Salmi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Deposition method and an apparatus for depositing a silicon-contain...
- Patent number 12,107,005
- Issue date Oct 1, 2024
- ASM IP Holding B.V.
- Zecheng Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Selective blocking of metal surfaces using bifunctional self-assemb...
- Patent number 12,094,766
- Issue date Sep 17, 2024
- Applied Materials, Inc.
- Michael L. McSwiney
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for sealing a seam, semiconductor structure, and method for...
- Patent number 12,094,768
- Issue date Sep 17, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yu-Lien Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for forming a metal silicate film on a substrate in a react...
- Patent number 12,094,936
- Issue date Sep 17, 2024
- ASM IP Holding B.V.
- Fu Tang
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Tin oxide films in semiconductor device manufacturing
- Patent number 12,094,711
- Issue date Sep 17, 2024
- Lam Research Corporation
- Jengyi Yu
- H01 - BASIC ELECTRIC ELEMENTS
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Interconnect system with improved low-K dielectrics
- Patent number 12,080,547
- Issue date Sep 3, 2024
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Method of forming a nitrogen-containing carbon film and system for...
- Patent number 12,068,154
- Issue date Aug 20, 2024
- ASM IP Holding B.V.
- Hirotsugu Sugiura
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Information Patent Grant
Gate spacer structure and method of forming same
- Patent number 12,062,709
- Issue date Aug 13, 2024
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- Wei-Ting Chien
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for forming the same
- Patent number 12,062,719
- Issue date Aug 13, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Kuan-Ting Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing semiconductor device
- Patent number 12,051,586
- Issue date Jul 30, 2024
- Samsung Electronics Co., Ltd.
- Seung-Min Ryu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming an electrode on a substrate and a semiconductor d...
- Patent number 12,020,938
- Issue date Jun 25, 2024
- ASM IP Holding B.V.
- Moataz Bellah Mousa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Metal-doped carbon hardmasks
- Patent number 12,014,925
- Issue date Jun 18, 2024
- Applied Materials, Inc.
- Eswaranand Venkatasubramanian
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Information Patent Grant
Area selective carbon-based film deposition
- Patent number 11,972,940
- Issue date Apr 30, 2024
- Applied Materials, Inc.
- Xinke Wang
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Information Patent Grant
Sequential infiltration synthesis apparatus
- Patent number 11,970,766
- Issue date Apr 30, 2024
- ASM IP Holding B.V.
- Ivo Johannes Raaijmakers
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Information Patent Grant
Precursor solution for thin film deposition and thin film forming m...
- Patent number 11,972,941
- Issue date Apr 30, 2024
- SK TRICHEM
- Chang Sung Hong
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Information Patent Grant
Self-assembled monolayer for selective deposition
- Patent number 11,967,523
- Issue date Apr 23, 2024
- Applied Materials, Inc.
- Xiangjin Xie
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
HYDROGEN BARRIERS AND RELATED STRUCTURES, SYSTEMS, AND METHODS
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- Publication date Apr 24, 2025
- ASM IP HOLDING B.V.
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- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
PRECURSOR FOR FORMING YTTRIUM- OR SCANDIUM-CONTAINING THIN FILM, ME...
- Publication number 20250122619
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- SK TRI CHEM CO., LTD.
- Han Sol OH
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DEPOSITION OF ORGANIC FILMS
- Publication number 20250118562
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- ASM IP HOLDING B.V.
- Eva E. Tois
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FILM DEPOSITING COMPOSITION INCLUDING GROUP 4 METAL ELEMENT-CONTAIN...
- Publication number 20250109496
- Publication date Apr 3, 2025
- UP CHEMICAL CO., LTD.
- Byung Kwan KIM
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
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HAFNIUM-CONTAINING STRUCTURES AND RELATED METHODS AND SYSTEMS
- Publication number 20250079155
- Publication date Mar 6, 2025
- ASM IP HOLDING B.V.
- Fatemeh Davodi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEPOSITION OF ORGANIC MATERIAL
- Publication number 20250079161
- Publication date Mar 6, 2025
- ASM IP HOLDING B.V.
- Adam Vianna
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS FOR FORMING A SEMICONDUCTOR DEVICE STRUCTURE AND RELATED SE...
- Publication number 20250081588
- Publication date Mar 6, 2025
- ASM IP HOLDING B.V.
- Chiyu Zhu
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
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NITROGEN-BASED OXYGEN-FREE DIPOLES, RELATED DEVICES, RELATED SYSTEM...
- Publication number 20250079156
- Publication date Mar 6, 2025
- ASM IP HOLDING B.V.
- Giuseppe Alessio Verni
- H01 - BASIC ELECTRIC ELEMENTS
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METHODS OF IMPROVING METAL OXIDE DEPOSITION WITH NITROGEN OXIDE AND...
- Publication number 20250079157
- Publication date Mar 6, 2025
- Entegris, Inc.
- Rong Zhao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELECTIVE DEPOSITION OF OXIDE MATERIAL AND A DEPOSITION ASSEMBLY
- Publication number 20250069883
- Publication date Feb 27, 2025
- ASM IP HOLDING B.V.
- Vincent Vandalon
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Atomic Layer Deposition of Passivation Layer
- Publication number 20250046603
- Publication date Feb 6, 2025
- TOKYO ELECTRON LIMITED
- Du Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SUBSTRATE PROCESSING METHOD
- Publication number 20250029829
- Publication date Jan 23, 2025
- ASM IP HOLDING B.V.
- SungBae Kim
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
HALOGEN-FREE MOLYBDENUM-CONTAINING PRECURSORS FOR DEPOSITION OF MOL...
- Publication number 20240425536
- Publication date Dec 26, 2024
- Applied Materials, Inc.
- Feng Q. Liu
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
DENSIFIED SEAM-FREE SILICON-CONTAINING MATERIAL GAP FILL PROCESSES
- Publication number 20240420950
- Publication date Dec 19, 2024
- Applied Materials, Inc.
- Xiang Ji
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device and Method of Forming the Same
- Publication number 20240387686
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Hsin-Hua Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEVICE AND METHOD OF FORMING THE SAME
- Publication number 20240387255
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Yu-Lien Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FORMING SEMICONDUCTOR DEVICE HAVING CRYSTALLINE SEMICOND...
- Publication number 20240387169
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yen-Chieh Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS FOR REDUCING SCRATCH DEFECTS IN CHEMICAL MECHANICAL PLANARI...
- Publication number 20240387187
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Wan-Chun Pan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE HAVING SEAM SEALED
- Publication number 20240379419
- Publication date Nov 14, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yu-Lien HUANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTERCONNECT SYSTEM WITH IMPROVED LOW-K DIELECTRICS
- Publication number 20240363336
- Publication date Oct 31, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Joung-Wei Liou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
C-AXIS ORIENTED IZO MATERIAL FILM AND MANUFACTURING METHOD THEREFOR
- Publication number 20240360550
- Publication date Oct 31, 2024
- IUCF-HYU (INDUSTRY-UNIVERSITY COOPERATION FOUNDATION HANYANG UNIVERSITY)
- Jin Seong PARK
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME
- Publication number 20240355926
- Publication date Oct 24, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Kuan-Ting Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR DEPOSITING AMORPHOUS CARBON FILM
- Publication number 20240347335
- Publication date Oct 17, 2024
- TES CO., LTD.
- Kwang-Ki Kim
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
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SEGMENTED FORMATION OF GATE INTERFACE
- Publication number 20240339318
- Publication date Oct 10, 2024
- Applied Materials, Inc.
- Steven C. H. HUNG
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SYSTEMS AND METHODS FOR DEPOSITING LOW-K DIELECTRIC FILMS
- Publication number 20240290611
- Publication date Aug 29, 2024
- Applied Materials, Inc.
- Bo Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RADICAL-ACTIVATED CARBON FILM DEPOSITION
- Publication number 20240282570
- Publication date Aug 22, 2024
- LAM RESEARCH CORPORATION
- Bhadri N. Varadarajan
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SELECTIVE DEPOSITION OF METAL OXIDE
- Publication number 20240282572
- Publication date Aug 22, 2024
- ASM IP HOLDING B.V.
- Viraj Madhiwala
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Semiconductor Structure Having High Breakdown Voltage Etch-Stop Layer
- Publication number 20240266292
- Publication date Aug 8, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Joung-Wei Liou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
AREA SELECTIVE CARBON-BASED FILM DEPOSITION
- Publication number 20240234127
- Publication date Jul 11, 2024
- Applied Materials, Inc.
- Xinke Wang
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
METHODS AND APPARATUSES FOR CARBON DEPOSITION
- Publication number 20240222107
- Publication date Jul 4, 2024
- ASM IP HOLDING B.V.
- Varun Sharma
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...

the layer being characterised by the precursor material for deposition

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Methods for stabilization of self-assembled monolayers (SAMs) using...

Tunability of dopant concentration in thin hafnium oxide films

Treatments to improve device performance

Methods for depositing gap filling fluid

Flowable chemical vapor deposition of metal oxides

Deposition of organic films

Carbon gap fill processes

Dual RF for controllable film deposition

Method for manufacturing semiconductor device, and film-forming device

Method of manufacturing gate structure and method of manufacturing...

Methods for forming a semiconductor device structure and related se...

Pre-deposition treatment for FET technology and devices formed thereby

PEALD nitride films

Methods for filling a gap feature on a substrate surface and relate...

Deposition method and an apparatus for depositing a silicon-contain...

Selective blocking of metal surfaces using bifunctional self-assemb...

Method for sealing a seam, semiconductor structure, and method for...

Methods for forming a metal silicate film on a substrate in a react...

Tin oxide films in semiconductor device manufacturing

Interconnect system with improved low-K dielectrics

Method of forming a nitrogen-containing carbon film and system for...

Gate spacer structure and method of forming same

Semiconductor device and method for forming the same

Method of manufacturing semiconductor device

Method of forming an electrode on a substrate and a semiconductor d...

Metal-doped carbon hardmasks

Area selective carbon-based film deposition

Sequential infiltration synthesis apparatus

Precursor solution for thin film deposition and thin film forming m...

Self-assembled monolayer for selective deposition

Patents Applicationslast 30 patents

HYDROGEN BARRIERS AND RELATED STRUCTURES, SYSTEMS, AND METHODS

PRECURSOR FOR FORMING YTTRIUM- OR SCANDIUM-CONTAINING THIN FILM, ME...

DEPOSITION OF ORGANIC FILMS

FILM DEPOSITING COMPOSITION INCLUDING GROUP 4 METAL ELEMENT-CONTAIN...

HAFNIUM-CONTAINING STRUCTURES AND RELATED METHODS AND SYSTEMS

DEPOSITION OF ORGANIC MATERIAL

METHODS FOR FORMING A SEMICONDUCTOR DEVICE STRUCTURE AND RELATED SE...

NITROGEN-BASED OXYGEN-FREE DIPOLES, RELATED DEVICES, RELATED SYSTEM...

METHODS OF IMPROVING METAL OXIDE DEPOSITION WITH NITROGEN OXIDE AND...

SELECTIVE DEPOSITION OF OXIDE MATERIAL AND A DEPOSITION ASSEMBLY

Atomic Layer Deposition of Passivation Layer

SUBSTRATE PROCESSING METHOD

HALOGEN-FREE MOLYBDENUM-CONTAINING PRECURSORS FOR DEPOSITION OF MOL...

DENSIFIED SEAM-FREE SILICON-CONTAINING MATERIAL GAP FILL PROCESSES

Semiconductor Device and Method of Forming the Same

DEVICE AND METHOD OF FORMING THE SAME

METHOD FOR FORMING SEMICONDUCTOR DEVICE HAVING CRYSTALLINE SEMICOND...

METHODS FOR REDUCING SCRATCH DEFECTS IN CHEMICAL MECHANICAL PLANARI...

SEMICONDUCTOR STRUCTURE HAVING SEAM SEALED

INTERCONNECT SYSTEM WITH IMPROVED LOW-K DIELECTRICS

C-AXIS ORIENTED IZO MATERIAL FILM AND MANUFACTURING METHOD THEREFOR

SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME

METHOD FOR DEPOSITING AMORPHOUS CARBON FILM

SEGMENTED FORMATION OF GATE INTERFACE

SYSTEMS AND METHODS FOR DEPOSITING LOW-K DIELECTRIC FILMS

RADICAL-ACTIVATED CARBON FILM DEPOSITION

SELECTIVE DEPOSITION OF METAL OXIDE

Semiconductor Structure Having High Breakdown Voltage Etch-Stop Layer

AREA SELECTIVE CARBON-BASED FILM DEPOSITION

METHODS AND APPARATUSES FOR CARBON DEPOSITION