the layer being characterised by the precursor material for deposition

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

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H01L21/02205the layer being characterised by the precursor material for deposition

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Patents Grantslast 30 patents

Information Patent Grant
Methods and systems for forming a layer comprising aluminum, titani...
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the layer being characterised by the precursor material for deposition

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Methods and systems for forming a layer comprising aluminum, titani...

Deposition of oxides and nitrides

Scandium precursor for SC2O3 or SC2S3 atomic layer deposition

Sidewall passivation for plasma etching

Method of manufacturing semiconductor device, substrate processing...

Methods and apparatus for selective etch stop capping and selective...

Method of processing substrate, method of manufacturing semiconduct...

Methods to reduce UNCD film roughness

Semiconductor devices and methods

Semiconductor structure having high breakdown voltage etch-stop layer

Deposition of semiconductor integration films

Methods for stabilization of self-assembled monolayers (SAMs) using...

Tunability of dopant concentration in thin hafnium oxide films

Treatments to improve device performance

Flowable chemical vapor deposition of metal oxides

Methods for depositing gap filling fluid

Deposition of organic films

Carbon gap fill processes

Dual RF for controllable film deposition

Method for manufacturing semiconductor device, and film-forming device

Method of manufacturing gate structure and method of manufacturing...

Methods for forming a semiconductor device structure and related se...

Pre-deposition treatment for FET technology and devices formed thereby

PEALD nitride films

Methods for filling a gap feature on a substrate surface and relate...

Deposition method and an apparatus for depositing a silicon-contain...

Selective blocking of metal surfaces using bifunctional self-assemb...

Method for sealing a seam, semiconductor structure, and method for...

Methods for forming a metal silicate film on a substrate in a react...

Tin oxide films in semiconductor device manufacturing

Patents Applicationslast 30 patents

THIN FILM MODIFICATION COMPOSITION, METHOD OF FORMING THIN FILM USI...

METHODS FOR DEPOSITING GAP FILLING FLUIDS AND RELATED SYSTEMS AND D...

TUNABILITY OF DOPANT CONCENTRATION IN THIN HAFNIUM OXIDE FILMS

STEP COVERAGE IMPROVER, METHOD OF FORMING THIN FILM USING STEP COVE...

METHODS AND APPARATUS UTILIZING INDIUM-BASED PRECURSORS FOR INTEGRA...

THIN-FILM FORMING COMPOSITION INCLUDING ALUMINUM COMPOUND, METHOD O...

HYDROGEN BARRIERS AND RELATED STRUCTURES, SYSTEMS, AND METHODS

PRECURSOR FOR FORMING YTTRIUM- OR SCANDIUM-CONTAINING THIN FILM, ME...

DEPOSITION OF ORGANIC FILMS

FILM DEPOSITING COMPOSITION INCLUDING GROUP 4 METAL ELEMENT-CONTAIN...

HAFNIUM-CONTAINING STRUCTURES AND RELATED METHODS AND SYSTEMS

DEPOSITION OF ORGANIC MATERIAL

METHODS FOR FORMING A SEMICONDUCTOR DEVICE STRUCTURE AND RELATED SE...

NITROGEN-BASED OXYGEN-FREE DIPOLES, RELATED DEVICES, RELATED SYSTEM...

METHODS OF IMPROVING METAL OXIDE DEPOSITION WITH NITROGEN OXIDE AND...

SELECTIVE DEPOSITION OF OXIDE MATERIAL AND A DEPOSITION ASSEMBLY

Atomic Layer Deposition of Passivation Layer

SUBSTRATE PROCESSING METHOD

HALOGEN-FREE MOLYBDENUM-CONTAINING PRECURSORS FOR DEPOSITION OF MOL...

DENSIFIED SEAM-FREE SILICON-CONTAINING MATERIAL GAP FILL PROCESSES

Semiconductor Device and Method of Forming the Same

DEVICE AND METHOD OF FORMING THE SAME

METHOD FOR FORMING SEMICONDUCTOR DEVICE HAVING CRYSTALLINE SEMICOND...

METHODS FOR REDUCING SCRATCH DEFECTS IN CHEMICAL MECHANICAL PLANARI...

SEMICONDUCTOR STRUCTURE HAVING SEAM SEALED

INTERCONNECT SYSTEM WITH IMPROVED LOW-K DIELECTRICS

C-AXIS ORIENTED IZO MATERIAL FILM AND MANUFACTURING METHOD THEREFOR

SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME

METHOD FOR DEPOSITING AMORPHOUS CARBON FILM

SEGMENTED FORMATION OF GATE INTERFACE