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the layer being characterised by the precursor material for deposition
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Electric elements
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the layer being characterised by the precursor material for deposition
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Pre-deposition treatment for FET technology and devices formed thereby
Patent number
12,142,531
Issue date
Nov 12, 2024
Taiwan Semiconductor Manufacturing Co., Ltd
Cheng-Yen Tsai
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PEALD nitride films
Patent number
12,119,221
Issue date
Oct 15, 2024
Applied Materials, Inc.
Hanhong Chen
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Methods for filling a gap feature on a substrate surface and relate...
Patent number
12,119,220
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Oct 15, 2024
ASM IP Holding B.V.
Leo Salmi
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Deposition method and an apparatus for depositing a silicon-contain...
Patent number
12,107,005
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Oct 1, 2024
ASM IP Holding B.V.
Zecheng Liu
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Selective blocking of metal surfaces using bifunctional self-assemb...
Patent number
12,094,766
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Sep 17, 2024
Applied Materials, Inc.
Michael L. McSwiney
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Method for sealing a seam, semiconductor structure, and method for...
Patent number
12,094,768
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Sep 17, 2024
Taiwan Semiconductor Manufacturing Company, Ltd
Yu-Lien Huang
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Methods for forming a metal silicate film on a substrate in a react...
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12,094,936
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Sep 17, 2024
ASM IP Holding B.V.
Fu Tang
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Tin oxide films in semiconductor device manufacturing
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12,094,711
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Sep 17, 2024
Lam Research Corporation
Jengyi Yu
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Interconnect system with improved low-K dielectrics
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12,080,547
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Sep 3, 2024
Taiwan Semiconductor Manufacturing Company, Ltd
Joung-Wei Liou
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Method of forming a nitrogen-containing carbon film and system for...
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12,068,154
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Aug 20, 2024
ASM IP Holding B.V.
Hirotsugu Sugiura
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Gate spacer structure and method of forming same
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12,062,709
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Aug 13, 2024
Taiwan Semiconductor Manufacturing Company, Ltd
Wei-Ting Chien
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Semiconductor device and method for forming the same
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12,062,719
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Aug 13, 2024
Taiwan Semiconductor Manufacturing Company, Ltd
Kuan-Ting Chen
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Method of manufacturing semiconductor device
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12,051,586
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Jul 30, 2024
Samsung Electronics Co., Ltd.
Seung-Min Ryu
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Method of forming an electrode on a substrate and a semiconductor d...
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12,020,938
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Jun 25, 2024
ASM IP Holding B.V.
Moataz Bellah Mousa
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Metal-doped carbon hardmasks
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12,014,925
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Jun 18, 2024
Applied Materials, Inc.
Eswaranand Venkatasubramanian
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Area selective carbon-based film deposition
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11,972,940
Issue date
Apr 30, 2024
Applied Materials, Inc.
Xinke Wang
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Sequential infiltration synthesis apparatus
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11,970,766
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Apr 30, 2024
ASM IP Holding B.V.
Ivo Johannes Raaijmakers
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Precursor solution for thin film deposition and thin film forming m...
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11,972,941
Issue date
Apr 30, 2024
SK TRICHEM
Chang Sung Hong
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Self-assembled monolayer for selective deposition
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11,967,523
Issue date
Apr 23, 2024
Applied Materials, Inc.
Xiangjin Xie
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Systems and methods for depositing low-k dielectric films
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11,967,498
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Apr 23, 2024
Applied Materials, Inc.
Bo Xie
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Semiconductor structure having high breakdown voltage etch-stop layer
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11,961,803
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Apr 16, 2024
Taiwan Semiconductor Manufacturing Co., Ltd
Joung-Wei Liou
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Deposition of metal films with tungsten liner
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11,948,836
Issue date
Apr 2, 2024
Applied Materials, Inc.
Yu Lei
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Semiconductor device and method for forming the same
Patent number
11,942,546
Issue date
Mar 26, 2024
Taiwan Semiconductor Manufacturing Company, Ltd
Kuan-Ting Chen
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Method for depositing silicon-free carbon-containing film as gap-fi...
Patent number
11,923,190
Issue date
Mar 5, 2024
ASM IP Holding B.V.
Timothee Julien Vincent Blanquart
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Methods for depositing an oxide film on a substrate by a cyclical d...
Patent number
11,923,192
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Mar 5, 2024
ASM IP Holding B.V.
Fu Tang
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Quantum dots and production method thereof
Patent number
11,901,178
Issue date
Feb 13, 2024
Samsung Electronics Co., Ltd.
Tae Gon Kim
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Molybdenum thin films by oxidation-reduction
Patent number
11,891,690
Issue date
Feb 6, 2024
Applied Materials, Inc.
Feng Q. Liu
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Methods and precursors for selective deposition of metal films
Patent number
11,887,847
Issue date
Jan 30, 2024
Applied Materials, Inc.
Kurt Fredrickson
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Scandium precursor for SC2O3 or SC2S3 atomic layer deposition
Patent number
11,866,453
Issue date
Jan 9, 2024
Intel Corporation
Patricio E. Romero
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Gate structure, fin field-effect transistor, and method of manufact...
Patent number
11,855,083
Issue date
Dec 26, 2023
Taiwan Semiconductor Manufacturing Company, Ltd
Ji-Cheng Chen
H01 - BASIC ELECTRIC ELEMENTS
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Semiconductor Device and Method of Forming the Same
Publication number
20240387686
Publication date
Nov 21, 2024
Taiwan Semiconductor Manufacturing Co., Ltd.
Hsin-Hua Lee
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METHOD FOR FORMING SEMICONDUCTOR DEVICE HAVING CRYSTALLINE SEMICOND...
Publication number
20240387169
Publication date
Nov 21, 2024
Taiwan Semiconductor Manufacturing Company, Ltd.
Yen-Chieh Huang
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DEVICE AND METHOD OF FORMING THE SAME
Publication number
20240387255
Publication date
Nov 21, 2024
Taiwan Semiconductor Manufacturing Co., Ltd.
Yu-Lien Huang
H01 - BASIC ELECTRIC ELEMENTS
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METHODS FOR REDUCING SCRATCH DEFECTS IN CHEMICAL MECHANICAL PLANARI...
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20240387187
Publication date
Nov 21, 2024
Taiwan Semiconductor Manufacturing Co., Ltd.
Wan-Chun Pan
H01 - BASIC ELECTRIC ELEMENTS
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SEMICONDUCTOR STRUCTURE HAVING SEAM SEALED
Publication number
20240379419
Publication date
Nov 14, 2024
Taiwan Semiconductor Manufacturing Company, Ltd.
Yu-Lien HUANG
H01 - BASIC ELECTRIC ELEMENTS
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INTERCONNECT SYSTEM WITH IMPROVED LOW-K DIELECTRICS
Publication number
20240363336
Publication date
Oct 31, 2024
Taiwan Semiconductor Manufacturing Co., Ltd.
Joung-Wei Liou
H01 - BASIC ELECTRIC ELEMENTS
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C-AXIS ORIENTED IZO MATERIAL FILM AND MANUFACTURING METHOD THEREFOR
Publication number
20240360550
Publication date
Oct 31, 2024
IUCF-HYU (INDUSTRY-UNIVERSITY COOPERATION FOUNDATION HANYANG UNIVERSITY)
Jin Seong PARK
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SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME
Publication number
20240355926
Publication date
Oct 24, 2024
Taiwan Semiconductor Manufacturing Company, Ltd.
Kuan-Ting Chen
H01 - BASIC ELECTRIC ELEMENTS
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METHOD FOR DEPOSITING AMORPHOUS CARBON FILM
Publication number
20240347335
Publication date
Oct 17, 2024
TES CO., LTD.
Kwang-Ki Kim
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SEGMENTED FORMATION OF GATE INTERFACE
Publication number
20240339318
Publication date
Oct 10, 2024
Applied Materials, Inc.
Steven C. H. HUNG
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SYSTEMS AND METHODS FOR DEPOSITING LOW-K DIELECTRIC FILMS
Publication number
20240290611
Publication date
Aug 29, 2024
Applied Materials, Inc.
Bo Xie
H01 - BASIC ELECTRIC ELEMENTS
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RADICAL-ACTIVATED CARBON FILM DEPOSITION
Publication number
20240282570
Publication date
Aug 22, 2024
LAM RESEARCH CORPORATION
Bhadri N. Varadarajan
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SELECTIVE DEPOSITION OF METAL OXIDE
Publication number
20240282572
Publication date
Aug 22, 2024
ASM IP HOLDING B.V.
Viraj Madhiwala
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Semiconductor Structure Having High Breakdown Voltage Etch-Stop Layer
Publication number
20240266292
Publication date
Aug 8, 2024
Taiwan Semiconductor Manufacturing Company, Ltd.
Joung-Wei Liou
H01 - BASIC ELECTRIC ELEMENTS
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AREA SELECTIVE CARBON-BASED FILM DEPOSITION
Publication number
20240234127
Publication date
Jul 11, 2024
Applied Materials, Inc.
Xinke Wang
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METHODS AND APPARATUSES FOR CARBON DEPOSITION
Publication number
20240222107
Publication date
Jul 4, 2024
ASM IP HOLDING B.V.
Varun Sharma
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METHODS FOR SELECTIVELY FORMING A DIELECTRIC LAYER ON A METALLIC SU...
Publication number
20240222111
Publication date
Jul 4, 2024
ASM IP HOLDING B.V.
Viraj Madhiwala
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METAL OXIDE THIN FILM PRECURSOR, METHOD OF FABRICATING METAL OXIDE...
Publication number
20240199670
Publication date
Jun 20, 2024
University-Industry Cooperation Group of Kyung Hee University
Jongwook PARK
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METHODS FOR DEPOSITING AN OXIDE FILM ON A SUBSTRATE BY A CYCLICAL D...
Publication number
20240186138
Publication date
Jun 6, 2024
ASM IP HOLDING B.V.
Fu Tang
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METHOD OF FORMING AN ORGANIC POLYMER COMPRISING POLYIMIDE
Publication number
20240177992
Publication date
May 30, 2024
ASM IP HOLDING B.V.
Andrea Illiberi
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WAFER FOR THE CVD GROWTH OF UNIFORM GRAPHENE AND METHOD OF MANUFACT...
Publication number
20240153762
Publication date
May 9, 2024
Paragraf Limited
Sebastian DIXON
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METHOD OF MANUFACTURING GATE STRUCTURE AND METHOD OF MANUFACTURING...
Publication number
20240096883
Publication date
Mar 21, 2024
Taiwan Semiconductor Manufacturing Company, Ltd.
Ji-Cheng Chen
H01 - BASIC ELECTRIC ELEMENTS
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SCANDIUM PRECURSOR FOR SC2O3 OR SC2S3 ATOMIC LAYER DEPOSITION
Publication number
20240092804
Publication date
Mar 21, 2024
Intel Corporation
Patricio E. ROMERO
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GATE STRUCTURE, FIN FIELD-EFFECT TRANSISTOR, AND METHOD OF MANUFACT...
Publication number
20240088144
Publication date
Mar 14, 2024
Taiwan Semiconductor Manufacturing Company, Ltd.
Ji-Cheng Chen
H01 - BASIC ELECTRIC ELEMENTS
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SEMICONDUCTOR DEVICE INCLUDING WORK FUNCTION LAYER AND METHOD FOR F...
Publication number
20240079229
Publication date
Mar 7, 2024
Taiwan Semiconductor Manufacturing company Ltd.
CHIA CHAN FAN
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YTTRIUM COMPOUND, SOURCE MATERIAL FOR FORMING YTTRIUM-CONTAINING FI...
Publication number
20240067663
Publication date
Feb 29, 2024
ADEKA CORPORATION
Hyunwoo KIM
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PRESSURE-BASED SENSOR SYSTEM FOR PRECURSOR LEVEL MEASUREMENT AND ME...
Publication number
20240044689
Publication date
Feb 8, 2024
ASM IP HOLDING, B.V.
Giuseppe Alessio Verni
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DEPOSITION METHOD OF METAL OXIDE AND MANUFACTURING METHOD OF MEMORY...
Publication number
20240038529
Publication date
Feb 1, 2024
SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Shunpei YAMAZAKI
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LAYER DEPOSITION METHOD AND LAYER DEPOSITION APPARATUS
Publication number
20240030024
Publication date
Jan 25, 2024
Samsung Electronics Co., Ltd.
Intak Jeon
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METHODS FOR FORMING A TRANSITION METAL NIOBIUM NITRIDE FILM ON A SU...
Publication number
20240030035
Publication date
Jan 25, 2024
ASM IP HOLDING B.V.
Jerry Peijun Chen
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