the layer being characterised by the precursor material for deposition

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

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H01L21/02205the layer being characterised by the precursor material for deposition

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Patents Grantslast 30 patents

Information Patent Grant
Self-assembled monolayer for selective deposition
- Patent number 11,967,523
- Issue date Apr 23, 2024
- Applied Materials, Inc.
- Xiangjin Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Systems and methods for depositing low-k dielectric films
- Patent number 11,967,498
- Issue date Apr 23, 2024
- Applied Materials, Inc.
- Bo Xie
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Information Patent Grant
Semiconductor structure having high breakdown voltage etch-stop layer
- Patent number 11,961,803
- Issue date Apr 16, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Joung-Wei Liou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Deposition of metal films with tungsten liner
- Patent number 11,948,836
- Issue date Apr 2, 2024
- Applied Materials, Inc.
- Yu Lei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for forming the same
- Patent number 11,942,546
- Issue date Mar 26, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Kuan-Ting Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for depositing silicon-free carbon-containing film as gap-fi...
- Patent number 11,923,190
- Issue date Mar 5, 2024
- ASM IP Holding B.V.
- Timothee Julien Vincent Blanquart
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Information Patent Grant
Methods for depositing an oxide film on a substrate by a cyclical d...
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- ASM IP Holding B.V.
- Fu Tang
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Quantum dots and production method thereof
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- Issue date Feb 13, 2024
- Samsung Electronics Co., Ltd.
- Tae Gon Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Molybdenum thin films by oxidation-reduction
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- Issue date Feb 6, 2024
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- Feng Q. Liu
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Information Patent Grant
Methods and precursors for selective deposition of metal films
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- Issue date Jan 30, 2024
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- Kurt Fredrickson
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Information Patent Grant
Scandium precursor for SC2O3 or SC2S3 atomic layer deposition
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- Issue date Jan 9, 2024
- Intel Corporation
- Patricio E. Romero
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Information Patent Grant
Gate structure, fin field-effect transistor, and method of manufact...
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- Issue date Dec 26, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Ji-Cheng Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Selective blocking of metal surfaces using bifunctional self-assemb...
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- Issue date Dec 19, 2023
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Information Patent Grant
Low-k boron carbonitride films
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- Issue date Nov 28, 2023
- Applied Materials, Inc.
- Zeqing Shen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for forming a transition metal niobium nitride film on a su...
- Patent number 11,810,788
- Issue date Nov 7, 2023
- ASM IP Holding B.V.
- Jerry Peijun Chen
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Tungsten compound, raw material for thin film formation and method...
- Patent number 11,807,652
- Issue date Nov 7, 2023
- Adeka Corporation
- Akio Saito
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Methods for forming a metal silicate film on a substrate in a react...
- Patent number 11,798,999
- Issue date Oct 24, 2023
- ASM IP Holding B.V.
- Fu Tang
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Preparation of lanthanide-containing precursors and deposition of l...
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- Issue date Oct 10, 2023
- L'AIR LIQUIDE, SOCIETE ANONYME POUR L'ETUDE ET L'EXPLOITATION DES PROCEDES GE...
- Daehyeon Kim
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Information Patent Grant
High breakdown voltage inter-metal dielectric layer
- Patent number 11,769,692
- Issue date Sep 26, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Joung-Wei Liou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for depositing a hafnium lanthanum oxide film on a substrat...
- Patent number 11,769,664
- Issue date Sep 26, 2023
- ASM IP Holding B.V.
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- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Increased-transparency photovoltaic device
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- Issue date Sep 12, 2023
- OXFORD PHOTOVOLTAICS LIMITED
- Terence Alan Reid
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a photoresist underlayer and structure including...
- Patent number 11,735,422
- Issue date Aug 22, 2023
- ASM IP Holding B.V.
- Ivan Zyulkov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate spacer structure and method of forming same
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- Issue date Jul 18, 2023
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- Wei-Ting Chien
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low-k feature formation processes and structures formed thereby
- Patent number 11,705,327
- Issue date Jul 18, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Wan-Yi Kao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating semiconductor device
- Patent number 11,699,661
- Issue date Jul 11, 2023
- NANYA TECHNOLOGY CORPORATION
- Tse-Yao Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Film deposition method and plasma processing apparatus
- Patent number 11,699,614
- Issue date Jul 11, 2023
- Tokyo Electron Limited
- Michiko Nakaya
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Methods for forming a semiconductor device structure and related se...
- Patent number 11,695,054
- Issue date Jul 4, 2023
- ASM IP Holding B.V.
- Chiyu Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High selectivity atomic later deposition process
- Patent number 11,664,215
- Issue date May 30, 2023
- Applied Materials, Inc.
- Christopher Ahles
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method for depositing silicon-free carbon-containing film as gap-fi...
- Patent number 11,646,197
- Issue date May 9, 2023
- ASM IP Holding B.V.
- Timothee Julien Vincent Blanquart
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
PEALD nitride films
- Patent number 11,626,281
- Issue date Apr 11, 2023
- Applied Materials, Inc.
- Hanhong Chen
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Patents Applicationslast 30 patents

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METHOD OF MANUFACTURING GATE STRUCTURE AND METHOD OF MANUFACTURING...
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- Publication date Mar 21, 2024
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- Ji-Cheng Chen
- H01 - BASIC ELECTRIC ELEMENTS
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SCANDIUM PRECURSOR FOR SC2O3 OR SC2S3 ATOMIC LAYER DEPOSITION
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- Intel Corporation
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GATE STRUCTURE, FIN FIELD-EFFECT TRANSISTOR, AND METHOD OF MANUFACT...
- Publication number 20240088144
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- Ji-Cheng Chen
- H01 - BASIC ELECTRIC ELEMENTS
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SEMICONDUCTOR DEVICE INCLUDING WORK FUNCTION LAYER AND METHOD FOR F...
- Publication number 20240079229
- Publication date Mar 7, 2024
- Taiwan Semiconductor Manufacturing company Ltd.
- CHIA CHAN FAN
- H01 - BASIC ELECTRIC ELEMENTS
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YTTRIUM COMPOUND, SOURCE MATERIAL FOR FORMING YTTRIUM-CONTAINING FI...
- Publication number 20240067663
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- ADEKA CORPORATION
- Hyunwoo KIM
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
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PRESSURE-BASED SENSOR SYSTEM FOR PRECURSOR LEVEL MEASUREMENT AND ME...
- Publication number 20240044689
- Publication date Feb 8, 2024
- ASM IP HOLDING, B.V.
- Giuseppe Alessio Verni
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DEPOSITION METHOD OF METAL OXIDE AND MANUFACTURING METHOD OF MEMORY...
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- SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
- Shunpei YAMAZAKI
- H01 - BASIC ELECTRIC ELEMENTS
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LAYER DEPOSITION METHOD AND LAYER DEPOSITION APPARATUS
- Publication number 20240030024
- Publication date Jan 25, 2024
- Samsung Electronics Co., Ltd.
- Intak Jeon
- H01 - BASIC ELECTRIC ELEMENTS
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METHODS FOR FORMING A TRANSITION METAL NIOBIUM NITRIDE FILM ON A SU...
- Publication number 20240030035
- Publication date Jan 25, 2024
- ASM IP HOLDING B.V.
- Jerry Peijun Chen
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METHODS FOR FORMING A METAL SILICATE FILM ON A SUBSTRATE IN A REACT...
- Publication number 20240030296
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- ASM IP HOLDING B.V.
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Methods For Stabilization Of Self-Assembled Monolayers (SAMs) Using...
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- TOKYO ELECTRON LIMITED
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- Publication number 20230420256
- Publication date Dec 28, 2023
- ASM IP HOLDING B.V.
- Ivan Zyulkov
- H01 - BASIC ELECTRIC ELEMENTS
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SEMICONDUCTOR ELECTRONIC DEVICES INCLUDING SIDEWALL BARRIER LAYERS...
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- Publication date Dec 21, 2023
- Corning Incorporated
- Hoon Kim
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METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
- Publication number 20230402279
- Publication date Dec 14, 2023
- SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
- Shunpei YAMAZAKI
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DEPOSITION OF SEMICONDUCTOR INTEGRATION FILMS
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- Publication date Nov 30, 2023
- Applied Materials, Inc.
- Lakmal Charidu Kalutarage
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METHODS FOR REDUCING SCRATCH DEFECTS IN CHEMICAL MECHANICAL PLANARI...
- Publication number 20230377898
- Publication date Nov 23, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Wan-Chun Pan
- H01 - BASIC ELECTRIC ELEMENTS
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LOW TEMPERATURE FLOWABLE VANADIUM OXIDE GAP FILL
- Publication number 20230357924
- Publication date Nov 9, 2023
- ASM IP HOLDING B.V.
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METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
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- Yurim KIM
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Area Selective Carbon-Based Film Deposition
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- Xinke Wang
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SUBSTRATES FOR OPTICAL AND ELECTRON MICROSCOPY OF 2D MATERIALS
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- UNITED STATES DEPARTMENT OF ENERGY
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- H01 - BASIC ELECTRIC ELEMENTS
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Low-k Feature Formation Processes and Structures Formed Thereby
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- Wan-Yi Kao
- H01 - BASIC ELECTRIC ELEMENTS
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METHOD AND SYSTEM FOR MIXED GROUP V PRECURSOR PROCESS
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- H01 - BASIC ELECTRIC ELEMENTS
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PHOTORESISTS CONTAINING TANTALUM
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ALUMINUM PRECURSOR, METHOD OF FORMING A THIN LAYER USING THE SAME,...
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SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME
- Publication number 20230268225
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METHODS TO REDUCE UNCD FILM ROUGHNESS
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- H01 - BASIC ELECTRIC ELEMENTS

the layer being characterised by the precursor material for deposition

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Self-assembled monolayer for selective deposition

Systems and methods for depositing low-k dielectric films

Semiconductor structure having high breakdown voltage etch-stop layer

Deposition of metal films with tungsten liner

Semiconductor device and method for forming the same

Method for depositing silicon-free carbon-containing film as gap-fi...

Methods for depositing an oxide film on a substrate by a cyclical d...

Quantum dots and production method thereof

Molybdenum thin films by oxidation-reduction

Methods and precursors for selective deposition of metal films

Scandium precursor for SC2O3 or SC2S3 atomic layer deposition

Gate structure, fin field-effect transistor, and method of manufact...

Selective blocking of metal surfaces using bifunctional self-assemb...

Low-k boron carbonitride films

Methods for forming a transition metal niobium nitride film on a su...

Tungsten compound, raw material for thin film formation and method...

Methods for forming a metal silicate film on a substrate in a react...

Preparation of lanthanide-containing precursors and deposition of l...

High breakdown voltage inter-metal dielectric layer

Methods for depositing a hafnium lanthanum oxide film on a substrat...

Increased-transparency photovoltaic device

Method of forming a photoresist underlayer and structure including...

Gate spacer structure and method of forming same

Low-k feature formation processes and structures formed thereby

Method for fabricating semiconductor device

Film deposition method and plasma processing apparatus

Methods for forming a semiconductor device structure and related se...

High selectivity atomic later deposition process

Method for depositing silicon-free carbon-containing film as gap-fi...

PEALD nitride films

Patents Applicationslast 30 patents

METHOD OF MANUFACTURING GATE STRUCTURE AND METHOD OF MANUFACTURING...

SCANDIUM PRECURSOR FOR SC2O3 OR SC2S3 ATOMIC LAYER DEPOSITION

GATE STRUCTURE, FIN FIELD-EFFECT TRANSISTOR, AND METHOD OF MANUFACT...

SEMICONDUCTOR DEVICE INCLUDING WORK FUNCTION LAYER AND METHOD FOR F...

YTTRIUM COMPOUND, SOURCE MATERIAL FOR FORMING YTTRIUM-CONTAINING FI...

PRESSURE-BASED SENSOR SYSTEM FOR PRECURSOR LEVEL MEASUREMENT AND ME...

DEPOSITION METHOD OF METAL OXIDE AND MANUFACTURING METHOD OF MEMORY...

LAYER DEPOSITION METHOD AND LAYER DEPOSITION APPARATUS

METHODS FOR FORMING A TRANSITION METAL NIOBIUM NITRIDE FILM ON A SU...

METHODS FOR FORMING A METAL SILICATE FILM ON A SUBSTRATE IN A REACT...

METHOD OF FORMING FILM AND METHOD OF MANUFACTURING SEMICONDUCTOR DE...

Methods For Stabilization Of Self-Assembled Monolayers (SAMs) Using...

METHOD OF FORMING A PHOTORESIST UNDERLAYER AND STRUCTURE INCLUDING...

SEMICONDUCTOR ELECTRONIC DEVICES INCLUDING SIDEWALL BARRIER LAYERS...

METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

DEPOSITION OF SEMICONDUCTOR INTEGRATION FILMS

METHODS FOR REDUCING SCRATCH DEFECTS IN CHEMICAL MECHANICAL PLANARI...

LOW TEMPERATURE FLOWABLE VANADIUM OXIDE GAP FILL

METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

METHODS FOR FORMING A SEMICONDUCTOR DEVICE STRUCTURE AND RELATED SE...

Area Selective Carbon-Based Film Deposition

SUBSTRATES FOR OPTICAL AND ELECTRON MICROSCOPY OF 2D MATERIALS

Low-k Feature Formation Processes and Structures Formed Thereby

METHOD AND SYSTEM FOR MIXED GROUP V PRECURSOR PROCESS

PHOTORESISTS CONTAINING TANTALUM

ALUMINUM PRECURSOR, METHOD OF FORMING A THIN LAYER USING THE SAME,...

SEMICONDUCTOR DEVICE MANUFACTURING METHOD

SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME

Semiconductor Devices and Methods

METHODS TO REDUCE UNCD FILM ROUGHNESS