the material containing at least one rare earth metal element

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H01L21/02192

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

Current Industry

H01L21/02192the material containing at least one rare earth metal element

Industries

Patents Grantslast 30 patents

Information Patent Grant
Single crystal semiconductor structure and method of manufacturing...
- Patent number 11,923,195
- Issue date Mar 5, 2024
- Samsung Electronics Co., Ltd.
- Junhee Choi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Voltage regulator circuit including one or more thin-film transistors
- Patent number 11,923,371
- Issue date Mar 5, 2024
- Intel Corporation
- Abhishek A. Sharma
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Methods for depositing an oxide film on a substrate by a cyclical d...
- Patent number 11,923,192
- Issue date Mar 5, 2024
- ASM IP Holding B.V.
- Fu Tang
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Gate structures in semiconductor devices
- Patent number 11,908,702
- Issue date Feb 20, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Hsiang-Pi Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit devices and methods of fabricating such devices
- Patent number 11,894,376
- Issue date Feb 6, 2024
- Samsung Electronics Co., Ltd.
- Dae-Won Ha
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High-K gate dielectric
- Patent number 11,862,706
- Issue date Jan 2, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chia-Hao Pao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate structures for semiconductor devices
- Patent number 11,854,906
- Issue date Dec 26, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chun-Fai Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nanosheet device with dipole dielectric layer and methods of formin...
- Patent number 11,830,924
- Issue date Nov 28, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chung-Wei Hsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Group VI precursor compounds
- Patent number 11,807,653
- Issue date Nov 7, 2023
- Entegris, Inc.
- David M. Ermert
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Preparation of lanthanide-containing precursors and deposition of l...
- Patent number 11,784,041
- Issue date Oct 10, 2023
- L'AIR LIQUIDE, SOCIETE ANONYME POUR L'ETUDE ET L'EXPLOITATION DES PROCEDES GE...
- Daehyeon Kim
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Methods for depositing a hafnium lanthanum oxide film on a substrat...
- Patent number 11,769,664
- Issue date Sep 26, 2023
- ASM IP Holding B.V.
- Tatiana Ivanova
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 11,728,372
- Issue date Aug 15, 2023
- Samsung Electronics Co., Ltd.
- Han Jin Lim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for patterning a lanthanum containing layer
- Patent number 11,699,621
- Issue date Jul 11, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Kun-Yu Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure and formation method of semiconductor device with fin str...
- Patent number 11,688,645
- Issue date Jun 27, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Kun-Yu Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Layer stack for display applications
- Patent number 11,600,642
- Issue date Mar 7, 2023
- Applied Materials, Inc.
- Xiangxin Rui
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method of preparing an isolation region in a high resistivity silic...
- Patent number 11,587,825
- Issue date Feb 21, 2023
- GlobalWafers Co., Ltd.
- Igor Peidous
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Metal insulator semiconductor (MIS) contact in three dimensional (3...
- Patent number 11,538,809
- Issue date Dec 27, 2022
- Micron Technology, Inc.
- Kamal M. Karda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Epitaxial oxide integrated circuit
- Patent number 11,522,087
- Issue date Dec 6, 2022
- SILANNA UV TECHNOLOGIES PTE LTD
- Petar Atanackovic
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for depositing an oxide film on a substrate by a cyclical d...
- Patent number 11,469,098
- Issue date Oct 11, 2022
- ASM IP Holding B.V.
- Fu Tang
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Thin film structure including dielectric material layer and electro...
- Patent number 11,456,351
- Issue date Sep 27, 2022
- Samsung Electronics Co., Ltd.
- Taehwan Moon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Deposition of oxide thin films
- Patent number 11,430,656
- Issue date Aug 30, 2022
- ASM IP Holding B.V.
- Suvi P. Haukka
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method of preparing an isolation region in a high resistivity silic...
- Patent number 11,380,576
- Issue date Jul 5, 2022
- GlobalWafers Co., Ltd.
- Igor Peidous
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Amorphous silicon doped yttrium oxide films and methods of formation
- Patent number 11,370,669
- Issue date Jun 28, 2022
- Applied Materials, Inc.
- Tatsuya E. Sato
- C01 - INORGANIC CHEMISTRY
Information Patent Grant
Nanosheet device with dipole dielectric layer and methods of formin...
- Patent number 11,374,105
- Issue date Jun 28, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chung-Wei Hsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Group VI precursor compounds
- Patent number 11,352,383
- Issue date Jun 7, 2022
- Entegris, Inc.
- David M. Ermert
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High-k gate dielectric
- Patent number 11,349,009
- Issue date May 31, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chia-Hao Pao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-function equipment implementing fabrication of high-k dielect...
- Patent number 11,322,348
- Issue date May 3, 2022
- Miin-Jang Chen
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Semiconductor device
- Patent number 11,322,578
- Issue date May 3, 2022
- Samsung Electronics Co., Ltd.
- Han Jin Lim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Metal complexes containing cyclopentadienyl ligands
- Patent number 11,312,730
- Issue date Apr 26, 2022
- Merck Patent GmbH
- Ming Fang
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Methods of forming metal gates
- Patent number 11,295,990
- Issue date Apr 5, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd
- Ju-Li Huang
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
VOLTAGE REGULATOR CIRCUIT INCLUDING ONE OR MORE THIN-FILM TRANSISTORS
- Publication number 20240128269
- Publication date Apr 18, 2024
- Intel Corporation
- Abhishek A. SHARMA
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
RADICAL TREATMENT FOR METAL GATE STACK
- Publication number 20240087899
- Publication date Mar 14, 2024
- Applied Materials, Inc.
- Zhihui Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
YTTRIUM COMPOUND, SOURCE MATERIAL FOR FORMING YTTRIUM-CONTAINING FI...
- Publication number 20240067663
- Publication date Feb 29, 2024
- ADEKA CORPORATION
- Hyunwoo KIM
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
EPITAXIAL OXIDE MATERIALS, STRUCTURES, AND DEVICES
- Publication number 20240072205
- Publication date Feb 29, 2024
- Silanna UV Technologies Pte Ltd
- Petar Atanackovic
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Gate Structures For Semiconductor Devices
- Publication number 20240071835
- Publication date Feb 29, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chun-Fai CHENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EPITAXIAL OXIDE MATERIALS, STRUCTURES, AND DEVICES
- Publication number 20240055560
- Publication date Feb 15, 2024
- Silanna UV Technologies Pte Ltd
- Petar Atanackovic
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GROUP VI PRECURSOR COMPOUNDS
- Publication number 20240034745
- Publication date Feb 1, 2024
- Entegris, Inc.
- David M. ERMERT
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEPOSITION METHOD OF METAL OXIDE AND MANUFACTURING METHOD OF MEMORY...
- Publication number 20240038529
- Publication date Feb 1, 2024
- SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
- Shunpei YAMAZAKI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
APPARATUSES INCLUDING A SEMICONDUCTOR TRANSISTOR AND METHODS FOR FO...
- Publication number 20240014289
- Publication date Jan 11, 2024
- Micron Technology, Inc.
- Yoshikazu Moriwaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS FOR PATTERNING SUBSTRATES TO ADJUST VOLTAGE PROPERTIES
- Publication number 20230402291
- Publication date Dec 14, 2023
- Applied Materials, Inc.
- Steven C. H. HUNG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NANOSHEET DEVICE WITH DIPOLE DIELECTRIC LAYER AND METHODS OF FORMIN...
- Publication number 20230395691
- Publication date Dec 7, 2023
- Chung-Wei Hsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH-K DIELECTRIC MATERIALS WITH DIPOLE LAYER
- Publication number 20230386938
- Publication date Nov 30, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Huiching Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20230361161
- Publication date Nov 9, 2023
- Samsung Electronics Co., LTD
- Han Jin Lim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH FIN STRUCTURES
- Publication number 20230282521
- Publication date Sep 7, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Kun-Yu Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PREPARATION OF LANTHANIDE-CONTAINING PRECURSORS AND DEPOSITION OF L...
- Publication number 20230253200
- Publication date Aug 10, 2023
- L'air Liquide, Societe Anonyme Pour L'Etude et L'Exploitation Des Procedes Ge...
- Daehyeon KIM
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING SAME
- Publication number 20230207658
- Publication date Jun 29, 2023
- CHANGXIN MEMORY TECHNOLOGIES, INC.
- Yutong SHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH RESISTIVITY SILICON-ON-INSULATOR SUBSTRATE COMPRISING AN ISOLA...
- Publication number 20230163022
- Publication date May 25, 2023
- GLOBALWAFERS CO., LTD.
- Igor Peidous
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING METAL FLUORIDE-CONTAINING ORGANIC POLYMER...
- Publication number 20230089206
- Publication date Mar 23, 2023
- KIOXIA Corporation
- Norikatsu SASAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EPITAXIAL GALLIUM NITRIDE ALLOY FERROELECTRONICS
- Publication number 20230070465
- Publication date Mar 9, 2023
- The Regents of the University of Michigan
- Zetian Mi
- C30 - CRYSTAL GROWTH
Information Patent Application
GATE STRUCTURES IN SEMICONDUCTOR DEVICES
- Publication number 20230058221
- Publication date Feb 23, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Hsiang-Pi CHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
- Publication number 20230048781
- Publication date Feb 16, 2023
- KIOXIA Corporation
- Yuta SAITO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TWO-DIMENSIONAL ELECTRON GAS AT INTERFACE BETWEEN BASNO3 AND LAINO3
- Publication number 20230045518
- Publication date Feb 9, 2023
- Seoul National University R&DB Foundation
- Kook Rin CHAR
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS FOR DEPOSITING AN OXIDE FILM ON A SUBSTRATE BY A CYCLICAL D...
- Publication number 20230015724
- Publication date Jan 19, 2023
- ASM IP HOLDING B.V.
- Fu Tang
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
THIN FILM STRUCTURE INCLUDING DIELECTRIC MATERIAL LAYER AND ELECTRO...
- Publication number 20230015172
- Publication date Jan 19, 2023
- Samsung Electronics Co., Ltd.
- Taehwan MOON
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURE AND FORMATION METHOD OF SEMICONDUCTOR DEVICE WITH FIN STR...
- Publication number 20220406663
- Publication date Dec 22, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Kun-Yu Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEPOSITION OF OXIDE THIN FILMS
- Publication number 20220367173
- Publication date Nov 17, 2022
- ASM IP HOLDING B.V.
- Suvi P. Haukka
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Nanosheet Device With Dipole Dielectric Layer And Methods Of Formin...
- Publication number 20220328652
- Publication date Oct 13, 2022
- Taiwan Semiconductor Manufacturing Co., LTD
- Chung-Wei HSU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH-K DIELECTRIC MATERIALS WITH DIPOLE LAYER
- Publication number 20220310457
- Publication date Sep 29, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Huiching Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE INSPECTION USING A HIGH ATOMIC NUMBER MATERIAL
- Publication number 20220301944
- Publication date Sep 22, 2022
- Taiwan Semiconductor Manufacturing Company Limited
- Pei-Hsuan LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH-K GATE DIELECTRIC
- Publication number 20220293767
- Publication date Sep 15, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chia-Hao Pao
- H01 - BASIC ELECTRIC ELEMENTS

the material containing at least one rare earth metal element

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Single crystal semiconductor structure and method of manufacturing...

Voltage regulator circuit including one or more thin-film transistors

Methods for depositing an oxide film on a substrate by a cyclical d...

Gate structures in semiconductor devices

Integrated circuit devices and methods of fabricating such devices

High-K gate dielectric

Gate structures for semiconductor devices

Nanosheet device with dipole dielectric layer and methods of formin...

Group VI precursor compounds

Preparation of lanthanide-containing precursors and deposition of l...

Methods for depositing a hafnium lanthanum oxide film on a substrat...

Semiconductor device

Method for patterning a lanthanum containing layer

Structure and formation method of semiconductor device with fin str...

Layer stack for display applications

Method of preparing an isolation region in a high resistivity silic...

Metal insulator semiconductor (MIS) contact in three dimensional (3...

Epitaxial oxide integrated circuit

Methods for depositing an oxide film on a substrate by a cyclical d...

Thin film structure including dielectric material layer and electro...

Deposition of oxide thin films

Method of preparing an isolation region in a high resistivity silic...

Amorphous silicon doped yttrium oxide films and methods of formation

Nanosheet device with dipole dielectric layer and methods of formin...

Group VI precursor compounds

High-k gate dielectric

Multi-function equipment implementing fabrication of high-k dielect...

Semiconductor device

Metal complexes containing cyclopentadienyl ligands

Methods of forming metal gates

Patents Applicationslast 30 patents

VOLTAGE REGULATOR CIRCUIT INCLUDING ONE OR MORE THIN-FILM TRANSISTORS

RADICAL TREATMENT FOR METAL GATE STACK

YTTRIUM COMPOUND, SOURCE MATERIAL FOR FORMING YTTRIUM-CONTAINING FI...

EPITAXIAL OXIDE MATERIALS, STRUCTURES, AND DEVICES

Gate Structures For Semiconductor Devices

EPITAXIAL OXIDE MATERIALS, STRUCTURES, AND DEVICES

GROUP VI PRECURSOR COMPOUNDS

DEPOSITION METHOD OF METAL OXIDE AND MANUFACTURING METHOD OF MEMORY...

APPARATUSES INCLUDING A SEMICONDUCTOR TRANSISTOR AND METHODS FOR FO...

METHODS FOR PATTERNING SUBSTRATES TO ADJUST VOLTAGE PROPERTIES

NANOSHEET DEVICE WITH DIPOLE DIELECTRIC LAYER AND METHODS OF FORMIN...

HIGH-K DIELECTRIC MATERIALS WITH DIPOLE LAYER

SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE WITH FIN STRUCTURES

PREPARATION OF LANTHANIDE-CONTAINING PRECURSORS AND DEPOSITION OF L...

SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING SAME

HIGH RESISTIVITY SILICON-ON-INSULATOR SUBSTRATE COMPRISING AN ISOLA...

METHOD FOR MANUFACTURING METAL FLUORIDE-CONTAINING ORGANIC POLYMER...

EPITAXIAL GALLIUM NITRIDE ALLOY FERROELECTRONICS

GATE STRUCTURES IN SEMICONDUCTOR DEVICES

METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

TWO-DIMENSIONAL ELECTRON GAS AT INTERFACE BETWEEN BASNO3 AND LAINO3

METHODS FOR DEPOSITING AN OXIDE FILM ON A SUBSTRATE BY A CYCLICAL D...

THIN FILM STRUCTURE INCLUDING DIELECTRIC MATERIAL LAYER AND ELECTRO...

STRUCTURE AND FORMATION METHOD OF SEMICONDUCTOR DEVICE WITH FIN STR...

DEPOSITION OF OXIDE THIN FILMS

Nanosheet Device With Dipole Dielectric Layer And Methods Of Formin...

HIGH-K DIELECTRIC MATERIALS WITH DIPOLE LAYER

SEMICONDUCTOR STRUCTURE INSPECTION USING A HIGH ATOMIC NUMBER MATERIAL

HIGH-K GATE DIELECTRIC