the means being a conductive material

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H01L29/7845

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

Current Industry

H01L29/7845the means being a conductive material

Industries

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor devices and methods for fabricating the same
- Patent number 11,973,111
- Issue date Apr 30, 2024
- Samsung Electronics Co., Ltd.
- Mun Hyeon Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices with nanowires and methods for fabricating th...
- Patent number 11,967,595
- Issue date Apr 23, 2024
- Samsung Electronics Co., Ltd.
- Jae Jung Kim
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Silicide-sandwiched source/drain region and method of fabricating same
- Patent number 11,967,621
- Issue date Apr 23, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chung-Hui Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dual metal gate structure having portions of metal gate layers in c...
- Patent number 11,955,532
- Issue date Apr 9, 2024
- Intel Corporation
- Jeffrey S. Leib
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Heterogeneous metal line compositions for advanced integrated circu...
- Patent number 11,955,534
- Issue date Apr 9, 2024
- Intel Corporation
- Andrew W. Yeoh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench contact structures for advanced integrated circuit structure...
- Patent number 11,948,997
- Issue date Apr 2, 2024
- Intel Corporation
- Subhash M. Joshi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nanosheet field effect transistor with a source drain epitaxy repla...
- Patent number 11,942,374
- Issue date Mar 26, 2024
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Quantum dot devices with overlapping gates
- Patent number 11,942,516
- Issue date Mar 26, 2024
- Intel Corporation
- Nicole K. Thomas
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Metal oxide semiconductor having epitaxial source drain regions and...
- Patent number 11,901,454
- Issue date Feb 13, 2024
- Sony Group Corporation
- Yasushi Tateshita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin patterning for advanced integrated circuit structure fabrication
- Patent number 11,881,520
- Issue date Jan 23, 2024
- Intel Corporation
- Curtis Ward
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Melt anneal source and drain regions
- Patent number 11,855,146
- Issue date Dec 26, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Su-Hao Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Mobility enhancement by source and drain stress layer of implantati...
- Patent number 11,825,661
- Issue date Nov 21, 2023
- Taiwan Semiconductor Manufacturing Company Limited
- Hui-Hsien Wei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate cut and fin trim isolation for advanced integrated circuit str...
- Patent number 11,799,015
- Issue date Oct 24, 2023
- Intel Corporation
- Tahir Ghani
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFETs having step sided contact plugs and methods of manufacturin...
- Patent number 11,764,299
- Issue date Sep 19, 2023
- Samsung Electronics Co., Ltd.
- Sun Hom Paak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing semiconductor devices including the steps o...
- Patent number 11,749,528
- Issue date Sep 5, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Tzu-Ang Chao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power semiconductor device having a strain-inducing material embedd...
- Patent number 11,728,427
- Issue date Aug 15, 2023
- Infineon Technologies Austria AG
- Stefan Karner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 11,695,009
- Issue date Jul 4, 2023
- Samsung Electronics Co., Ltd.
- Sung-Dae Suk
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Stress layout optimization for device performance
- Patent number 11,664,432
- Issue date May 30, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Dirk Utess
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench contact structures for advanced integrated circuit structure...
- Patent number 11,664,439
- Issue date May 30, 2023
- Intel Corporation
- Subhash M. Joshi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Wrap-around bottom contact for bottom source/drain
- Patent number 11,664,455
- Issue date May 30, 2023
- International Business Machines Corporation
- Junli Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin cut and fin trim isolation for advanced integrated circuit stru...
- Patent number 11,646,359
- Issue date May 9, 2023
- Intel Corporation
- Tahir Ghani
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench isolation for advanced integrated circuit structure fabrication
- Patent number 11,640,985
- Issue date May 2, 2023
- Intel Corporation
- Michael L. Hattendorf
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 11,637,205
- Issue date Apr 25, 2023
- Samsung Electronics Co., Ltd.
- Junggil Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Device and method for tuning threshold voltage by implementing diff...
- Patent number 11,616,131
- Issue date Mar 28, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Sheng-Jier Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical reconfigurable field effect transistor
- Patent number 11,594,617
- Issue date Feb 28, 2023
- International Business Machines Corporation
- Bahman Hekmatshoartabari
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin field effect transistor (FinFET) device structure with stop lay...
- Patent number 11,594,634
- Issue date Feb 28, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Che-Cheng Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device structure with nanostructure and method for fo...
- Patent number 11,588,018
- Issue date Feb 21, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Sai-Hooi Yeong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Contact over active gate structures for advanced integrated circuit...
- Patent number 11,581,420
- Issue date Feb 14, 2023
- Intel Corporation
- Andrew W. Veoh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Heterogeneous metal line compositions for advanced integrated circu...
- Patent number 11,581,419
- Issue date Feb 14, 2023
- Intel Corporation
- Andrew W. Yeoh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicide-sandwiched source/drain region and method of fabricating same
- Patent number 11,563,095
- Issue date Jan 24, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chung-Hui Chen
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
MELT ANNEAL SOURCE AND DRAIN REGIONS
- Publication number 20240088225
- Publication date Mar 14, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Su-Hao Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIN TRIM PLUG STRUCTURES WITH METAL FOR IMPARTING CHANNEL STRESS
- Publication number 20240088292
- Publication date Mar 14, 2024
- Intel Corporation
- Tao CHU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HETEROGENEOUS METAL LINE COMPOSITIONS FOR ADVANCED INTEGRATED CIRCU...
- Publication number 20240047556
- Publication date Feb 8, 2024
- Intel Corporation
- Andrew W. YEOH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE CUT AND FIN TRIM ISOLATION FOR ADVANCED INTEGRATED CIRCUIT STR...
- Publication number 20230420545
- Publication date Dec 28, 2023
- Intel Corporation
- Tahir GHANI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTI-SILICIDE STRUCTURE FOR A SEMICONDUCTOR DEVICE AND A METHOD FO...
- Publication number 20230402524
- Publication date Dec 14, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chung-Liang CHENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
3D SOURCE AND DRAIN CONTACTS TUNED FOR VERTICALLY STACKED PMOS AND...
- Publication number 20230395718
- Publication date Dec 7, 2023
- Intel Corporation
- Willy Rachmady
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
3D SOURCE AND DRAIN CONTACTS TUNED FOR PMOS AND NMOS
- Publication number 20230395717
- Publication date Dec 7, 2023
- Intel Corporation
- Willy Rachmady
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MOBILITY ENHANCEMENT BY SOURCE AND DRAIN STRESS LAYER OR IMPLANTATI...
- Publication number 20230389333
- Publication date Nov 30, 2023
- Taiwan Semiconductor Manufacturing Company Limited
- Hui-Hsien WEI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FINFETS HAVING STEP SIDED CONTACT PLUGS AND METHODS OF MANUFACTURIN...
- Publication number 20230378356
- Publication date Nov 23, 2023
- Samsung Electronics Co., Ltd.
- Sun Hom PAAK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of Manufacturing Semiconductor Devices
- Publication number 20230360913
- Publication date Nov 9, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Tzu-Ang Chao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POWER SEMICONDUCTOR DEVICE HAVING AN ELECTRODE WITH AN EMBEDDED MAT...
- Publication number 20230343871
- Publication date Oct 26, 2023
- Infineon Technologies Austria AG
- Stefan Karner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONTACT RESISTANCE OF NANOSHEET TRANSISTOR
- Publication number 20230282748
- Publication date Sep 7, 2023
- International Business Machines Corporation
- Shogo Mochizuki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20230268440
- Publication date Aug 24, 2023
- UNITED MICROELECTRONICS CORP.
- Po-Yu Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRENCH CONTACT STRUCTURES FOR ADVANCED INTEGRATED CIRCUIT STRUCTURE...
- Publication number 20230261089
- Publication date Aug 17, 2023
- Intel Corporation
- Subhash M. JOSHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRESS LAYOUT OPTIMIZATION FOR DEVICE PERFORMANCE
- Publication number 20230238439
- Publication date Jul 27, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Dirk UTESS
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Device And Method For Tuning Threshold Voltage By Implementing Diff...
- Publication number 20230231028
- Publication date Jul 20, 2023
- Taiwan Semiconductor Manufacturing Co., LTD
- Sheng-Jier Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20230223476
- Publication date Jul 13, 2023
- Samsung Electronics Co., Ltd.
- Junggil Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE STRUCTURE WITH NANOSTRUCTURE
- Publication number 20230207625
- Publication date Jun 29, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Sai-Hooi YEONG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRENCH ISOLATION FOR ADVANCED INTEGRATED CIRCUIT STRUCTURE FABRICATION
- Publication number 20230207664
- Publication date Jun 29, 2023
- Intel Corporation
- Michael L. HATTENDORF
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICIDE-SANDWICHED SOURCE/DRAIN REGION AND METHOD OF FABRICATING SAME
- Publication number 20230154991
- Publication date May 18, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chung-Hui CHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONTACT OVER ACTIVE GATE STRUCTURES FOR ADVANCED INTEGRATED CIRCUIT...
- Publication number 20230144607
- Publication date May 11, 2023
- Intel Corporation
- Andrew W. Yeoh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE LINE PLUG STRUCTURES FOR ADVANCED INTEGRATED CIRCUIT STRUCTURE...
- Publication number 20230131757
- Publication date Apr 27, 2023
- Intel Corporation
- Byron HO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIN PATTERNING FOR ADVANCED INTEGRATED CIRCUIT STRUCTURE FABRICATION
- Publication number 20230126174
- Publication date Apr 27, 2023
- Intel Corporation
- Curtis WARD
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND METHOD FOR MANUFACTURING SEMICONDUCTOR...
- Publication number 20230114418
- Publication date Apr 13, 2023
- CHANGXIN MEMORY TECHNOLOGIES, INC
- Chih-Cheng LIU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NANOSTRUCTURE FET AND METHOD OF FORMING SAME
- Publication number 20230114216
- Publication date Apr 13, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Yi-Yun Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Nanowire Structures Having Non-Discrete Source and Drain Regions
- Publication number 20230111689
- Publication date Apr 13, 2023
- Google LLC
- Stephen M. Cea
- B82 - NANO-TECHNOLOGY
Information Patent Application
HETEROGENEOUS METAL LINE COMPOSITIONS FOR ADVANCED INTEGRATED CIRCU...
- Publication number 20230101723
- Publication date Mar 30, 2023
- Intel Corporation
- Andrew W. YEOH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTI-FINGER RF nFET HAVING BURIED STRESSOR LAYER AND ISOLATION TRE...
- Publication number 20230093111
- Publication date Mar 23, 2023
- Acorn Semi, LLC
- Paul A. Clifton
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING VERTICALLY DIS...
- Publication number 20230074199
- Publication date Mar 9, 2023
- Intel Corporation
- Glenn GLASS
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20230072989
- Publication date Mar 9, 2023
- Rohm Co., Ltd.
- Masaki NAGATA
- H01 - BASIC ELECTRIC ELEMENTS

the means being a conductive material

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Semiconductor devices and methods for fabricating the same

Semiconductor devices with nanowires and methods for fabricating th...

Silicide-sandwiched source/drain region and method of fabricating same

Dual metal gate structure having portions of metal gate layers in c...

Heterogeneous metal line compositions for advanced integrated circu...

Trench contact structures for advanced integrated circuit structure...

Nanosheet field effect transistor with a source drain epitaxy repla...

Quantum dot devices with overlapping gates

Metal oxide semiconductor having epitaxial source drain regions and...

Fin patterning for advanced integrated circuit structure fabrication

Melt anneal source and drain regions

Mobility enhancement by source and drain stress layer of implantati...

Gate cut and fin trim isolation for advanced integrated circuit str...

FinFETs having step sided contact plugs and methods of manufacturin...

Method of manufacturing semiconductor devices including the steps o...

Power semiconductor device having a strain-inducing material embedd...

Semiconductor device

Stress layout optimization for device performance

Trench contact structures for advanced integrated circuit structure...

Wrap-around bottom contact for bottom source/drain

Fin cut and fin trim isolation for advanced integrated circuit stru...

Trench isolation for advanced integrated circuit structure fabrication

Semiconductor device

Device and method for tuning threshold voltage by implementing diff...

Vertical reconfigurable field effect transistor

Fin field effect transistor (FinFET) device structure with stop lay...

Semiconductor device structure with nanostructure and method for fo...

Contact over active gate structures for advanced integrated circuit...

Heterogeneous metal line compositions for advanced integrated circu...

Silicide-sandwiched source/drain region and method of fabricating same

Patents Applicationslast 30 patents

MELT ANNEAL SOURCE AND DRAIN REGIONS

FIN TRIM PLUG STRUCTURES WITH METAL FOR IMPARTING CHANNEL STRESS

HETEROGENEOUS METAL LINE COMPOSITIONS FOR ADVANCED INTEGRATED CIRCU...

GATE CUT AND FIN TRIM ISOLATION FOR ADVANCED INTEGRATED CIRCUIT STR...

MULTI-SILICIDE STRUCTURE FOR A SEMICONDUCTOR DEVICE AND A METHOD FO...

3D SOURCE AND DRAIN CONTACTS TUNED FOR VERTICALLY STACKED PMOS AND...

3D SOURCE AND DRAIN CONTACTS TUNED FOR PMOS AND NMOS

MOBILITY ENHANCEMENT BY SOURCE AND DRAIN STRESS LAYER OR IMPLANTATI...

FINFETS HAVING STEP SIDED CONTACT PLUGS AND METHODS OF MANUFACTURIN...

Method of Manufacturing Semiconductor Devices

POWER SEMICONDUCTOR DEVICE HAVING AN ELECTRODE WITH AN EMBEDDED MAT...

CONTACT RESISTANCE OF NANOSHEET TRANSISTOR

SEMICONDUCTOR DEVICE

TRENCH CONTACT STRUCTURES FOR ADVANCED INTEGRATED CIRCUIT STRUCTURE...

STRESS LAYOUT OPTIMIZATION FOR DEVICE PERFORMANCE

Device And Method For Tuning Threshold Voltage By Implementing Diff...

SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE STRUCTURE WITH NANOSTRUCTURE

TRENCH ISOLATION FOR ADVANCED INTEGRATED CIRCUIT STRUCTURE FABRICATION

SILICIDE-SANDWICHED SOURCE/DRAIN REGION AND METHOD OF FABRICATING SAME

CONTACT OVER ACTIVE GATE STRUCTURES FOR ADVANCED INTEGRATED CIRCUIT...

GATE LINE PLUG STRUCTURES FOR ADVANCED INTEGRATED CIRCUIT STRUCTURE...

FIN PATTERNING FOR ADVANCED INTEGRATED CIRCUIT STRUCTURE FABRICATION

SEMICONDUCTOR STRUCTURE AND METHOD FOR MANUFACTURING SEMICONDUCTOR...

NANOSTRUCTURE FET AND METHOD OF FORMING SAME

Nanowire Structures Having Non-Discrete Source and Drain Regions

HETEROGENEOUS METAL LINE COMPOSITIONS FOR ADVANCED INTEGRATED CIRCU...

MULTI-FINGER RF nFET HAVING BURIED STRESSOR LAYER AND ISOLATION TRE...

GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING VERTICALLY DIS...

SEMICONDUCTOR DEVICE