the means being located in the source/drain region

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H01L29/7848

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

Current Industry

H01L29/7848the means being located in the source/drain region

Industries

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor structure and method for forming the same
- Patent number 12,176,420
- Issue date Dec 24, 2024
- Semiconductor Manufacturing International (Shanghai) Corporation
- Fei Zhou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET device comprising plurality of dummy protruding features
- Patent number 12,176,424
- Issue date Dec 24, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Che-Cheng Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Strained semiconductor FET devices with epitaxial quality improvement
- Patent number 12,176,434
- Issue date Dec 24, 2024
- International Business Machines Corporation
- Heng Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Stacked semiconductor device with nanostructure channels
- Patent number 12,170,227
- Issue date Dec 17, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chien-Te Tu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing gate structure and method of manufacturing...
- Patent number 12,170,280
- Issue date Dec 17, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Ji-Cheng Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate-all-around integrated circuit structures having germanium-dope...
- Patent number 12,166,124
- Issue date Dec 10, 2024
- Intel Corporation
- Ryan Hickey
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method
- Patent number 12,165,929
- Issue date Dec 10, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chun-Han Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit and manufacturing method thereof
- Patent number 12,166,040
- Issue date Dec 10, 2024
- Taiwan Semiconductor Manufacturing Company Limited
- Che-Cheng Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device structure with inner spacer
- Patent number 12,166,129
- Issue date Dec 10, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Sai-Hooi Yeong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor including active contact buried portions
- Patent number 12,159,911
- Issue date Dec 3, 2024
- Samsung Electronics Co., Ltd.
- Gyeom Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
IC including standard cells and SRAM cells
- Patent number 12,159,872
- Issue date Dec 3, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Jhon-Jhy Liaw
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Non-planar gate all-around device and method of fabrication thereof
- Patent number RE50222
- Issue date Nov 26, 2024
- Sony Group Corporation
- Willy Rachmady
Information Patent Grant
Forming nanosheet transistor using sacrificial spacer and inner spa...
- Patent number 12,154,971
- Issue date Nov 26, 2024
- Adeia Semiconductor Solutions LLC
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of manufacturing via structures on source/drain contacts
- Patent number 12,154,856
- Issue date Nov 26, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Kuo-Chiang Tsai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device structure
- Patent number 12,154,946
- Issue date Nov 26, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Ming-Shuan Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-oxide-semiconductor field-effect transistor with stacked sour...
- Patent number 12,154,988
- Issue date Nov 26, 2024
- Samsung Electronics Co., Ltd.
- Sujin Jung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices
- Patent number 12,148,837
- Issue date Nov 19, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Yi-Bo Liao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure and formation method of semiconductor device structure wi...
- Patent number 12,148,792
- Issue date Nov 19, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chih-Wei Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming finFET with low-dielectric-constant gate electrod...
- Patent number 12,148,832
- Issue date Nov 19, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Ka-Hing Fung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming source/drain contacts
- Patent number 12,142,663
- Issue date Nov 12, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Shahaji B. More
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 12,142,671
- Issue date Nov 12, 2024
- Samsung Electronics Co., Ltd.
- Dong Chan Suh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having a shaped epitaxial region with shaping...
- Patent number 12,142,681
- Issue date Nov 12, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yi-Min Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon and silicon germanium nanowire structures
- Patent number 12,142,634
- Issue date Nov 12, 2024
- Sony Group Corporation
- Kelin J. Kuhn
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Contact over active gate structures for advanced integrated circuit...
- Patent number 12,142,667
- Issue date Nov 12, 2024
- Intel Corporation
- Andrew W. Yeoh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with self-aligned wavy contact profile and met...
- Patent number 12,136,673
- Issue date Nov 5, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chia-Ta Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure with patterned fin structure
- Patent number 12,131,901
- Issue date Oct 29, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Shiang-Bau Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices and methods of manufacturing semiconductor de...
- Patent number 12,132,001
- Issue date Oct 29, 2024
- Samsung Electronics Co., Ltd.
- Yong Kong Siew
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nanowire structures having non-discrete source and drain regions
- Patent number 12,125,916
- Issue date Oct 22, 2024
- Google LLC
- Stephen M. Cea
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Semiconductor device and method
- Patent number 12,125,908
- Issue date Oct 22, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chia-Ling Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method thereof
- Patent number 12,125,878
- Issue date Oct 22, 2024
- Kioxia Corporation
- Tomonari Shioda
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD
- Publication number 20250006500
- Publication date Jan 2, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Ya-Lan Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FETS and Methods of Forming FETS
- Publication number 20250006549
- Publication date Jan 2, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Yen-Ru Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20240429316
- Publication date Dec 26, 2024
- UNITED MICROELECTRONICS CORP.
- Chia-Jhe Hsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NOISE TRANSISTOR
- Publication number 20240421228
- Publication date Dec 19, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Che-Chun Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH TUNABLE EPITAXY STRUCTURES AND METHOD OF...
- Publication number 20240413018
- Publication date Dec 12, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Shih-Hao Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONFINED EPITAXIAL REGIONS FOR SEMICONDUCTOR DEVICES AND METHODS OF...
- Publication number 20240405101
- Publication date Dec 5, 2024
- Intel Corporation
- Szuya S. LIAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURE
- Publication number 20240395874
- Publication date Nov 28, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chun-Hsien Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20240395936
- Publication date Nov 28, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Fang-Liang LU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Conductive Features of Semiconductor Devices and Methods of Forming...
- Publication number 20240395554
- Publication date Nov 28, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Yu Shan Lee
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Structure and Method for FinFET Device with Asymmetric Contact
- Publication number 20240395935
- Publication date Nov 28, 2024
- Parabellum Strategic Opportunities Fund LLC
- Jhon Jhy LIAW
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE HAVING A SHAPED EPITAXIAL REGION WITH SHAPING...
- Publication number 20240395937
- Publication date Nov 28, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Yi-Min Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20240397692
- Publication date Nov 28, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Yi-Jing LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE STRUCTURE HAVING GATE DIELECTRIC LAYER
- Publication number 20240395564
- Publication date Nov 28, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- I-Ming CHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD
- Publication number 20240387709
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Ssu-Yu Liao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES HAVING PARASITIC CHANNEL STRUCTURES
- Publication number 20240387633
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yu-Cheng SHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURE
- Publication number 20240387681
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Wen-Kai Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LEAKAGE REDUCTION FOR MULTI-GATE DEVICES
- Publication number 20240387703
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chao-Wei Hsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE STRUCTURE HAVING DISLOCATION STRESS MEMORIZATI...
- Publication number 20240387730
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Tsai-Jung HO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Epitaxial Features
- Publication number 20240387739
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Feng-Ching Chu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FORMING SOURCE/DRAIN CONTACTS
- Publication number 20240379814
- Publication date Nov 14, 2024
- TAIWAN SEMICONDUCTOR MANUFACTURING CO. LTD.
- Shahaji B. More
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES
- Publication number 20240379459
- Publication date Nov 14, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chun-Han Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURE AND FORMATION METHOD OF SEMICONDUCTOR DEVICE STRUCTURE WI...
- Publication number 20240379740
- Publication date Nov 14, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chih-Wei LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20240379674
- Publication date Nov 14, 2024
- Taiwan Semiconductor Manufacturing Company Limited
- Che-Cheng Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES
- Publication number 20240379364
- Publication date Nov 14, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Yu-Jiun Peng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20240379431
- Publication date Nov 14, 2024
- Parabellum Strategic Opportunities Fund LLC
- Chia-Hao CHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE WITH ENLARGED GATE ELECTRODE STRUCTURE AND...
- Publication number 20240379790
- Publication date Nov 14, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Bo-Wen HSIEH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES HAVING SILICIDE LAYER
- Publication number 20240379806
- Publication date Nov 14, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chia-Ming HSU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRESS-INDUCING SILICON LINER IN SEMICONDUCTOR DEVICES
- Publication number 20240379817
- Publication date Nov 14, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Bwo-Ning Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FinFET Device Comprising Plurality of Dummy Protruding Features
- Publication number 20240379826
- Publication date Nov 14, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Che-Cheng CHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20240379677
- Publication date Nov 14, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jhon Jhy Liaw
- H01 - BASIC ELECTRIC ELEMENTS

the means being located in the source/drain region

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Semiconductor structure and method for forming the same

FinFET device comprising plurality of dummy protruding features

Strained semiconductor FET devices with epitaxial quality improvement

Stacked semiconductor device with nanostructure channels

Method of manufacturing gate structure and method of manufacturing...

Gate-all-around integrated circuit structures having germanium-dope...

Semiconductor device and method

Integrated circuit and manufacturing method thereof

Semiconductor device structure with inner spacer

Semiconductor including active contact buried portions

IC including standard cells and SRAM cells

Non-planar gate all-around device and method of fabrication thereof

Forming nanosheet transistor using sacrificial spacer and inner spa...

Methods of manufacturing via structures on source/drain contacts

Semiconductor device structure

Multi-oxide-semiconductor field-effect transistor with stacked sour...

Semiconductor devices

Structure and formation method of semiconductor device structure wi...

Method of forming finFET with low-dielectric-constant gate electrod...

Method for forming source/drain contacts

Semiconductor device

Semiconductor device having a shaped epitaxial region with shaping...

Silicon and silicon germanium nanowire structures

Contact over active gate structures for advanced integrated circuit...

Semiconductor device with self-aligned wavy contact profile and met...

Semiconductor structure with patterned fin structure

Semiconductor devices and methods of manufacturing semiconductor de...

Nanowire structures having non-discrete source and drain regions

Semiconductor device and method

Semiconductor device and manufacturing method thereof

Patents Applicationslast 30 patents

SEMICONDUCTOR DEVICE AND METHOD

FETS and Methods of Forming FETS

SEMICONDUCTOR DEVICE

NOISE TRANSISTOR

SEMICONDUCTOR DEVICE WITH TUNABLE EPITAXY STRUCTURES AND METHOD OF...

CONFINED EPITAXIAL REGIONS FOR SEMICONDUCTOR DEVICES AND METHODS OF...

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURE

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

Conductive Features of Semiconductor Devices and Methods of Forming...

Structure and Method for FinFET Device with Asymmetric Contact

SEMICONDUCTOR DEVICE HAVING A SHAPED EPITAXIAL REGION WITH SHAPING...

SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE STRUCTURE HAVING GATE DIELECTRIC LAYER

SEMICONDUCTOR DEVICE AND METHOD

SEMICONDUCTOR DEVICES HAVING PARASITIC CHANNEL STRUCTURES

SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURE

LEAKAGE REDUCTION FOR MULTI-GATE DEVICES

SEMICONDUCTOR DEVICE STRUCTURE HAVING DISLOCATION STRESS MEMORIZATI...

Epitaxial Features

METHOD FOR FORMING SOURCE/DRAIN CONTACTS

SEMICONDUCTOR DEVICES

STRUCTURE AND FORMATION METHOD OF SEMICONDUCTOR DEVICE STRUCTURE WI...

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

SEMICONDUCTOR DEVICES

SEMICONDUCTOR DEVICE

SEMICONDUCTOR STRUCTURE WITH ENLARGED GATE ELECTRODE STRUCTURE AND...

SEMICONDUCTOR DEVICES HAVING SILICIDE LAYER

STRESS-INDUCING SILICON LINER IN SEMICONDUCTOR DEVICES

FinFET Device Comprising Plurality of Dummy Protruding Features

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME