the means being located in the source/drain region

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

Current Industry

H01L29/7848the means being located in the source/drain region

Industries

Patents Grantslast 30 patents

Information Patent Grant
High voltage field effect transistor with vertical current paths an...
- Patent number 11,978,774
- Issue date May 7, 2024
- SanDisk Technologies LLC
- Mitsuhiro Togo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate-all-around integrated circuit structures having germanium nano...
- Patent number 11,978,784
- Issue date May 7, 2024
- Intel Corporation
- Cory Bomberger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating transistor with thinned channel
- Patent number 11,978,799
- Issue date May 7, 2024
- Tahoe Research, LTD.
- Justin K. Brask
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of fabricating the same
- Patent number RE49963
- Issue date May 7, 2024
- Samsung Electronics Co., Ltd.
- Ki Hwan Kim
Information Patent Grant
Semiconductor device and methods of forming the same
- Patent number 11,973,027
- Issue date Apr 30, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Pei-Yu Chou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 11,973,117
- Issue date Apr 30, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chun-Hsien Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Source or drain structures for germanium N-channel devices
- Patent number 11,973,143
- Issue date Apr 30, 2024
- Intel Corporation
- Ryan Keech
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET channel on oxide structures and related methods
- Patent number 11,972,981
- Issue date Apr 30, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Kuo-Cheng Ching
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dual threshold voltage (VT) channel devices and their methods of fa...
- Patent number 11,967,615
- Issue date Apr 23, 2024
- Intel Corporation
- Hsu-Yu Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin end plug structures for advanced integrated circuit structure f...
- Patent number 11,961,838
- Issue date Apr 16, 2024
- Intel Corporation
- Byron Ho
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure and manufacturing method
- Patent number 11,961,737
- Issue date Apr 16, 2024
- Semiconductor Manufacturing International (Shanghai) Corporation
- Zhenyu Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit with a fin and gate structure and method making...
- Patent number 11,961,900
- Issue date Apr 16, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Kuo-Cheng Chiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method thereof
- Patent number 11,955,484
- Issue date Apr 9, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Kuan-Jung Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including a gate structure
- Patent number 11,955,523
- Issue date Apr 9, 2024
- Samsung Electronics Co., Ltd.
- Namgyu Cho
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dual metal gate structure having portions of metal gate layers in c...
- Patent number 11,955,532
- Issue date Apr 9, 2024
- Intel Corporation
- Jeffrey S. Leib
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor transistor structure and fabrication method thereof
- Patent number 11,955,536
- Issue date Apr 9, 2024
- United Semiconductor (Xiamen) Co., Ltd.
- Sheng-Hsu Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including an epitaxy region
- Patent number 11,955,547
- Issue date Apr 9, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Te-Jen Pan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Stacked semiconductor device with nanostructure channels and manufa...
- Patent number 11,955,384
- Issue date Apr 9, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chien-Te Tu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Heterogeneous metal line compositions for advanced integrated circu...
- Patent number 11,955,534
- Issue date Apr 9, 2024
- Intel Corporation
- Andrew W. Yeoh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating a multi-gate device
- Patent number 11,955,554
- Issue date Apr 9, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Huan-Sheng Wei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices including protruding insulation portions betw...
- Patent number 11,955,517
- Issue date Apr 9, 2024
- Samsung Electronics Co., Ltd.
- Shigenobu Maeda
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Mechanisms for growing epitaxy structure of finFET device
- Patent number 11,949,015
- Issue date Apr 2, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Szu-Chi Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method to induce strain in FINFET channels from an adjacent region
- Patent number 11,948,943
- Issue date Apr 2, 2024
- Bell Semiconductor, LLC
- Pierre Morin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for fabricating the same
- Patent number 11,948,975
- Issue date Apr 2, 2024
- United Microelectronics Corp.
- Chih-Kai Hsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon on insulator device with partially recessed gate
- Patent number 11,948,977
- Issue date Apr 2, 2024
- STMicroelectronics, Inc.
- John H. Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench contact structures for advanced integrated circuit structure...
- Patent number 11,948,997
- Issue date Apr 2, 2024
- Intel Corporation
- Subhash M. Joshi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming semiconductor device with helmet structure betwe...
- Patent number 11,942,476
- Issue date Mar 26, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Kuo-Cheng Ching
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 11,942,558
- Issue date Mar 26, 2024
- Samsung Electronics Co., Ltd.
- Mongsong Liang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nanosheet semiconductor device and method for manufacturing the same
- Patent number 11,942,550
- Issue date Mar 26, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chien-Chang Su
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure and formation method of semiconductor device with fin str...
- Patent number 11,942,375
- Issue date Mar 26, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Hsing-Hui Hsu
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
COBALT BASED INTERCONNECTS AND METHODS OF FABRICATION THEREOF
- Publication number 20240145391
- Publication date May 2, 2024
- Tahoe Research, Ltd.
- Christopher J. JEZEWSKI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE HAVING DOPED EPITAXIAL REGION AND ITS METHODS...
- Publication number 20240145592
- Publication date May 2, 2024
- Intel Corporation
- Anand S. MURTHY
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FORMING NANOSHEET TRANSISTOR USING SACRIFICIAL SPACER AND INNER SPA...
- Publication number 20240120408
- Publication date Apr 11, 2024
- TESSERA LLC
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIN FIELD EFFECT TRANSISTOR (FINFET) DEVICE STRUCTURE
- Publication number 20240113221
- Publication date Apr 4, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chun-Hsiung TSAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ASYMMETRIC SOURCE/DRAIN EPITAXY
- Publication number 20240105516
- Publication date Mar 28, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Yu-Lien Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR STRUCTURE AND FORMATION METHOD THEREOF
- Publication number 20240105846
- Publication date Mar 28, 2024
- Invention And Collaboration Laboratory Pte. Ltd.
- Chao-Chun Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR ARRANGEMENT AND METHOD OF MANUFACTURE
- Publication number 20240105847
- Publication date Mar 28, 2024
- Taiwan Semiconductor Manufacturing Company Limited
- Pei-Yu WANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EPITAXIAL SOURCE/DRAIN STRUCTURES FOR MULTIGATE DEVICES AND METHODS...
- Publication number 20240097035
- Publication date Mar 21, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chen-Ming Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL CHANNEL FIELD EFFECT TRANSISTOR (VCFET) WITH REDUCED CONTA...
- Publication number 20240096964
- Publication date Mar 21, 2024
- QUALCOMM Incorporated
- Junjing Bao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FORMING SEMICONDUCTOR DEVICE
- Publication number 20240096986
- Publication date Mar 21, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chung-Ting Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SUPPORTIVE LAYER IN SOURCE/DRAINS OF FINFET DEVICES
- Publication number 20240096958
- Publication date Mar 21, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Jung-Chi Tai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FinFET Device and Method of Forming Same
- Publication number 20240097036
- Publication date Mar 21, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Hsin-Hao Yeh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FABRICATING A STRAINED STRUCTURE AND STRUCTURE FORMED
- Publication number 20240097034
- Publication date Mar 21, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Tsung-Lin LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20240088295
- Publication date Mar 14, 2024
- Samsung Electronics Co., Ltd.
- Junggun YOU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EPITAXIAL FIN STRUCTURES OF FINFET HAVING AN EPITAXIAL BUFFER REGIO...
- Publication number 20240088266
- Publication date Mar 14, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Hsueh-Chang Sung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE AND A SEMICONDUCTOR...
- Publication number 20240088294
- Publication date Mar 14, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Shahaji B. MORE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MELT ANNEAL SOURCE AND DRAIN REGIONS
- Publication number 20240088225
- Publication date Mar 14, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Su-Hao Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING INSULATOR FIN...
- Publication number 20240088254
- Publication date Mar 14, 2024
- Intel Corporation
- Aaron D. LILAK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE INCLUDING EPITAXIAL REGION
- Publication number 20240087884
- Publication date Mar 14, 2024
- Samsung Electronics Co., Ltd.
- Gyeom Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ACTIVE AREA SALICIDATION FOR NMOS AND PMOS DEVICES
- Publication number 20240071832
- Publication date Feb 29, 2024
- Micron Technology, Inc.
- Ronald Allen Weimer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ADVANCED LITHOGRAPHY AND SELF-ASSEMBLED DEVICES
- Publication number 20240071917
- Publication date Feb 29, 2024
- Intel Corporation
- Richard E. SCHENKER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
3D ISOLATION OF A SEGMENTATED 3D NANOSHEET CHANNEL REGION
- Publication number 20240063261
- Publication date Feb 22, 2024
- TOKYO ELECTRON LIMITED
- Mark I. Gardner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR MEMORY STRUCTURE HAVING DRAIN STRESSOR, SOURCE STRESS...
- Publication number 20240055520
- Publication date Feb 15, 2024
- NANYA TECHNOLOGY CORPORATION
- CHENG-HSIANG FAN
- G11 - INFORMATION STORAGE
Information Patent Application
HETEROGENEOUS METAL LINE COMPOSITIONS FOR ADVANCED INTEGRATED CIRCU...
- Publication number 20240047556
- Publication date Feb 8, 2024
- Intel Corporation
- Andrew W. YEOH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONTINUOUS GATE AND FIN SPACER FOR ADVANCED INTEGRATED CIRCUIT STRU...
- Publication number 20240038578
- Publication date Feb 1, 2024
- Intel Corporation
- Heidi M. MEYER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device and Method
- Publication number 20240030319
- Publication date Jan 25, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Bo-Feng Young
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE STRUCTURE WITH INNER SPACER LAYER
- Publication number 20240021481
- Publication date Jan 18, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ching-Wei TSAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE-ALL-AROUND DEVICES WITH SUPERLATTICE CHANNEL
- Publication number 20240021694
- Publication date Jan 18, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Shin-Cheng LIU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Gate Structure and Method with Enhanced Gate Contact and Threshold...
- Publication number 20240021727
- Publication date Jan 18, 2024
- Taiwan Semiconductor Manufacturing Co., LTD
- Max Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20240021479
- Publication date Jan 18, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chien-Te TU
- H01 - BASIC ELECTRIC ELEMENTS

the means being located in the source/drain region

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

High voltage field effect transistor with vertical current paths an...

Gate-all-around integrated circuit structures having germanium nano...

Method for fabricating transistor with thinned channel

Semiconductor device and method of fabricating the same

Semiconductor device and methods of forming the same

Semiconductor device

Source or drain structures for germanium N-channel devices

FinFET channel on oxide structures and related methods

Dual threshold voltage (VT) channel devices and their methods of fa...

Fin end plug structures for advanced integrated circuit structure f...

Semiconductor structure and manufacturing method

Integrated circuit with a fin and gate structure and method making...

Semiconductor device and manufacturing method thereof

Semiconductor device including a gate structure

Dual metal gate structure having portions of metal gate layers in c...

Semiconductor transistor structure and fabrication method thereof

Semiconductor device including an epitaxy region

Stacked semiconductor device with nanostructure channels and manufa...

Heterogeneous metal line compositions for advanced integrated circu...

Method of fabricating a multi-gate device

Semiconductor devices including protruding insulation portions betw...

Mechanisms for growing epitaxy structure of finFET device

Method to induce strain in FINFET channels from an adjacent region

Semiconductor device and method for fabricating the same

Silicon on insulator device with partially recessed gate

Trench contact structures for advanced integrated circuit structure...

Method for forming semiconductor device with helmet structure betwe...

Semiconductor device

Nanosheet semiconductor device and method for manufacturing the same

Structure and formation method of semiconductor device with fin str...

Patents Applicationslast 30 patents

COBALT BASED INTERCONNECTS AND METHODS OF FABRICATION THEREOF

SEMICONDUCTOR DEVICE HAVING DOPED EPITAXIAL REGION AND ITS METHODS...

FORMING NANOSHEET TRANSISTOR USING SACRIFICIAL SPACER AND INNER SPA...

FIN FIELD EFFECT TRANSISTOR (FINFET) DEVICE STRUCTURE

ASYMMETRIC SOURCE/DRAIN EPITAXY

TRANSISTOR STRUCTURE AND FORMATION METHOD THEREOF

SEMICONDUCTOR ARRANGEMENT AND METHOD OF MANUFACTURE

EPITAXIAL SOURCE/DRAIN STRUCTURES FOR MULTIGATE DEVICES AND METHODS...

VERTICAL CHANNEL FIELD EFFECT TRANSISTOR (VCFET) WITH REDUCED CONTA...

METHOD FOR FORMING SEMICONDUCTOR DEVICE

SUPPORTIVE LAYER IN SOURCE/DRAINS OF FINFET DEVICES

FinFET Device and Method of Forming Same

METHOD FOR FABRICATING A STRAINED STRUCTURE AND STRUCTURE FORMED

SEMICONDUCTOR DEVICE

EPITAXIAL FIN STRUCTURES OF FINFET HAVING AN EPITAXIAL BUFFER REGIO...

METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE AND A SEMICONDUCTOR...

MELT ANNEAL SOURCE AND DRAIN REGIONS

GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING INSULATOR FIN...

SEMICONDUCTOR DEVICE INCLUDING EPITAXIAL REGION

ACTIVE AREA SALICIDATION FOR NMOS AND PMOS DEVICES

ADVANCED LITHOGRAPHY AND SELF-ASSEMBLED DEVICES

3D ISOLATION OF A SEGMENTATED 3D NANOSHEET CHANNEL REGION

SEMICONDUCTOR MEMORY STRUCTURE HAVING DRAIN STRESSOR, SOURCE STRESS...

HETEROGENEOUS METAL LINE COMPOSITIONS FOR ADVANCED INTEGRATED CIRCU...

CONTINUOUS GATE AND FIN SPACER FOR ADVANCED INTEGRATED CIRCUIT STRU...

Semiconductor Device and Method

SEMICONDUCTOR DEVICE STRUCTURE WITH INNER SPACER LAYER

GATE-ALL-AROUND DEVICES WITH SUPERLATTICE CHANNEL

Gate Structure and Method with Enhanced Gate Contact and Threshold...

SEMICONDUCTOR DEVICE