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H01L29/7849

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

Current Industry

H01L29/7849the means being provided under the channel

Industries

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor device and method
- Patent number 12,159,925
- Issue date Dec 3, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Ji-Yin Tsai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for making gate-all-around (GAA) device including a superlat...
- Patent number 12,142,641
- Issue date Nov 12, 2024
- ATOMERA INCORPORATED
- Keith Doran Weeks
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for making semiconductor device including superlattice with...
- Patent number 12,119,380
- Issue date Oct 15, 2024
- ATOMERA INCORPORATED
- Keith Doran Weeks
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Strain enhanced SiC power semiconductor device and method of manufa...
- Patent number 12,113,131
- Issue date Oct 8, 2024
- HITACHI ENERGY LTD
- Stephan Wirths
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for improving transistor performance
- Patent number 12,087,859
- Issue date Sep 10, 2024
- Texas Instruments Incorporated
- Steven Kummerl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Logic circuit, processing unit, electronic component, and electroni...
- Patent number 12,057,451
- Issue date Aug 6, 2024
- Semiconductor Energy Laboratory Co., Ltd.
- Wataru Uesugi
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor device
- Patent number 12,002,876
- Issue date Jun 4, 2024
- Semiconductor Energy Laboratory Co., Ltd.
- Shunpei Yamazaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Strained semiconductor using elastic edge relaxation of a stressor...
- Patent number 11,978,800
- Issue date May 7, 2024
- ACORN SEMI, LLC
- Paul A. Clifton
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate-all-around (GAA) device including a superlattice
- Patent number 11,978,771
- Issue date May 7, 2024
- ATOMERA INCORPORATED
- Keith Doran Weeks
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method to induce strain in FINFET channels from an adjacent region
- Patent number 11,948,943
- Issue date Apr 2, 2024
- Bell Semiconductor, LLC
- Pierre Morin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Epitaxial structure having super-lattice laminates
- Patent number 11,923,454
- Issue date Mar 5, 2024
- GlobalWafers Co., Ltd.
- Wei-Jie Sie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET device and method of forming same
- Patent number 11,855,213
- Issue date Dec 26, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Hsin-Hao Yeh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and structure for FinFET devices
- Patent number 11,855,089
- Issue date Dec 26, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yong-Yan Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for making semiconductor device including superlattice with...
- Patent number 11,848,356
- Issue date Dec 19, 2023
- ATOMERA INCORPORATED
- Keith Doran Weeks
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistor including multiple aspect trapping ratio st...
- Patent number 11,843,051
- Issue date Dec 12, 2023
- Samsung Electronics Co., Ltd.
- Mirco Cantoro
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including superlattice with oxygen and carbon...
- Patent number 11,837,634
- Issue date Dec 5, 2023
- ATOMERA INCORPORATED
- Keith Doran Weeks
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Relating to SOI wafers and devices with buried stressors
- Patent number 11,791,411
- Issue date Oct 17, 2023
- ACORN SEMI, LLC
- Paul A. Clifton
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for inducing stress in semiconductor devices
- Patent number 11,757,039
- Issue date Sep 12, 2023
- Imec VZW
- Gaspard Hiblot
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for fabricating the same
- Patent number 11,735,663
- Issue date Aug 22, 2023
- Samsung Electronics Co., Ltd.
- Jin Bum Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure and method for FinFET device with buried sige oxide
- Patent number 11,735,650
- Issue date Aug 22, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Kuo-Cheng Ching
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices including a stress pattern
- Patent number 11,728,430
- Issue date Aug 15, 2023
- Samsung Electronics Co., Ltd.
- Sung Min Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit devices and fabrication techniques
- Patent number 11,705,458
- Issue date Jul 18, 2023
- STMicroelectronics, Inc.
- John H. Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 11,695,009
- Issue date Jul 4, 2023
- Samsung Electronics Co., Ltd.
- Sung-Dae Suk
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacturing thereof
- Patent number 11,631,768
- Issue date Apr 18, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Huang-Siang Lan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nanowire transistor and manufacturing method thereof
- Patent number 11,594,623
- Issue date Feb 28, 2023
- Tsinghua University
- Feng Xu
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Fin field effect transistor (FinFET) device structure with stop lay...
- Patent number 11,594,634
- Issue date Feb 28, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Che-Cheng Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method to induce strain in finFET channels from an adjacent region
- Patent number 11,587,928
- Issue date Feb 21, 2023
- Bell Semiconductor, LLC
- Pierre Morin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and structure for FinFET devices
- Patent number 11,569,230
- Issue date Jan 31, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yong-Yan Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure and method for SRAM FinFET device
- Patent number 11,563,118
- Issue date Jan 24, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Kuo-Cheng Ching
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Device, method and system to provide a stressed channel of a transi...
- Patent number 11,557,676
- Issue date Jan 17, 2023
- Intel Corporation
- Rishabh Mehandru
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
LOGIC CIRCUIT, PROCESSING UNIT, ELECTRONIC COMPONENT, AND ELECTRONI...
- Publication number 20240395825
- Publication date Nov 28, 2024
- Semiconductor Energy Laboratory Co., Ltd.
- Wataru UESUGI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES
- Publication number 20240371983
- Publication date Nov 7, 2024
- Ji-Yin Tsai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device
- Publication number 20240322018
- Publication date Sep 26, 2024
- SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
- Shunpei Yamazaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRAINED SEMICONDUCTOR USING ELASTIC EDGE RELAXATION OF A STRESSOR...
- Publication number 20240250172
- Publication date Jul 25, 2024
- Acorn Semi, LLC
- Paul A. Clifton
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD TO INDUCE STRAIN IN FINFET CHANNELS FROM AN ADJACENT REGION
- Publication number 20240203995
- Publication date Jun 20, 2024
- Bell Semiconductor, LLC
- Pierre MORIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE-ALL-AROUND (GAA) DEVICE INCLUDING A SUPERLATTICE
- Publication number 20240194740
- Publication date Jun 13, 2024
- ATOMERA INCORPORATED
- KEITH DORAN WEEKS
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT DEVICES AND FABRICATION TECHNIQUES
- Publication number 20240145480
- Publication date May 2, 2024
- STMicroelectronics, Inc.
- John H. ZHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FinFET Device and Method of Forming Same
- Publication number 20240097036
- Publication date Mar 21, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Hsin-Hao Yeh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MAKING SEMICONDUCTOR DEVICE INCLUDING SUPERLATTICE WITH...
- Publication number 20240063268
- Publication date Feb 22, 2024
- ATOMERA INCORPORATED
- KEITH DORAN WEEKS
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SOI WAFERS AND DEVICES WITH BURIED STRESSORS
- Publication number 20240006532
- Publication date Jan 4, 2024
- Acorn Semi, LLC
- Paul A. Clifton
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICALLY STACKED FET WITH STRAINED CHANNEL
- Publication number 20230260971
- Publication date Aug 17, 2023
- International Business Machines Corporation
- SHOGO MOCHIZUKI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THEREOF
- Publication number 20230253500
- Publication date Aug 10, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Huang-Siang LAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRAINED SEMICONDUCTOR ON INSULATOR (SSOI) BASED GATE ALL AROUND (G...
- Publication number 20230170420
- Publication date Jun 1, 2023
- Intel Corporation
- Anand Murthy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD TO INDUCE STRAIN IN FINFET CHANNELS FROM AN ADJACENT REGION
- Publication number 20230163130
- Publication date May 25, 2023
- Bell Semiconductor, LLC
- Pierre MORIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FINFET EPI CHANNELS HAVING DIFFERENT HEIGHTS ON A STEPPED SUBSTRATE
- Publication number 20230154802
- Publication date May 18, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Cheng-Han Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device
- Publication number 20230132342
- Publication date Apr 27, 2023
- SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
- Shunpei Yamazaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE-ALL-AROUND (GAA) DEVICE INCLUDING A SUPERLATTICE
- Publication number 20230121774
- Publication date Apr 20, 2023
- ATOMERA INCORPORATED
- KEITH DORAN WEEKS
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MAKING GATE-ALL-AROUND (GAA) DEVICE INCLUDING A SUPERLAT...
- Publication number 20230122723
- Publication date Apr 20, 2023
- ATOMERA INCORPORATED
- KEITH DORAN WEEKS
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEVICE, METHOD AND SYSTEM TO PROVIDE A STRESSED CHANNEL OF A TRANSI...
- Publication number 20230111329
- Publication date Apr 13, 2023
- Intel Corporation
- Rishabh Mehandru
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIN TRIM PLUG STRUCTURES HAVING AN OXIDATION CATALYST LAYER SURROUN...
- Publication number 20230089815
- Publication date Mar 23, 2023
- Intel Corporation
- Leonard GULER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRAINED NANOSHEETS ON SILICON-ON-INSULATOR SUBSTRATE
- Publication number 20230031490
- Publication date Feb 2, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Ding-Kang SHIH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRAINED SEMICONDUCTOR USING ELASTIC EDGE RELAXATION OF A STRESSOR...
- Publication number 20230020403
- Publication date Jan 19, 2023
- Acorn Semi, LLC
- Paul A. Clifton
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Structure and Method for FinFET Device with Buried Sige Oxide
- Publication number 20230010954
- Publication date Jan 12, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Kuo-Cheng Chiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device and Method
- Publication number 20220367690
- Publication date Nov 17, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ji-Yin Tsai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD EFFECT TRANSISTOR INCLUDING MULTIPLE ASPECT TRAPPING RATIO ST...
- Publication number 20220352375
- Publication date Nov 3, 2022
- Samsung Electronics Co., Ltd.
- Mirco Cantoro
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOGIC CIRCUIT, PROCESSING UNIT, ELECTRONIC COMPONENT, AND ELECTRONI...
- Publication number 20220328530
- Publication date Oct 13, 2022
- Semiconductor Energy Laboratory Co., Ltd.
- Wataru UESUGI
- G11 - INFORMATION STORAGE
Information Patent Application
METHOD AND STRUCTURE FOR FINFET DEVICES
- Publication number 20220302113
- Publication date Sep 22, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yong-Yan Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Strain Enhanced SiC Power Semiconductor Device and Method of Manufa...
- Publication number 20220302309
- Publication date Sep 22, 2022
- Hitachi Energy Switzerland AG
- Stephan Wirths
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FinFET Device and Method of Forming Same
- Publication number 20220231169
- Publication date Jul 21, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Hsin-Hao Yeh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RELATING TO SOI WAFERS AND DEVICES WITH BURIED STRESSORS
- Publication number 20220223735
- Publication date Jul 14, 2022
- Acorn Semi, LLC
- Paul A. Clifton
- H01 - BASIC ELECTRIC ELEMENTS

the means being provided under the channel

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Semiconductor device and method

Method for making gate-all-around (GAA) device including a superlat...

Method for making semiconductor device including superlattice with...

Strain enhanced SiC power semiconductor device and method of manufa...

Method for improving transistor performance

Logic circuit, processing unit, electronic component, and electroni...

Semiconductor device

Strained semiconductor using elastic edge relaxation of a stressor...

Gate-all-around (GAA) device including a superlattice

Method to induce strain in FINFET channels from an adjacent region

Epitaxial structure having super-lattice laminates

FinFET device and method of forming same

Method and structure for FinFET devices

Method for making semiconductor device including superlattice with...

Field effect transistor including multiple aspect trapping ratio st...

Semiconductor device including superlattice with oxygen and carbon...

Relating to SOI wafers and devices with buried stressors

Method for inducing stress in semiconductor devices

Semiconductor device and method for fabricating the same

Structure and method for FinFET device with buried sige oxide

Semiconductor devices including a stress pattern

Integrated circuit devices and fabrication techniques

Semiconductor device

Semiconductor device and method of manufacturing thereof

Nanowire transistor and manufacturing method thereof

Fin field effect transistor (FinFET) device structure with stop lay...

Method to induce strain in finFET channels from an adjacent region

Method and structure for FinFET devices

Structure and method for SRAM FinFET device

Device, method and system to provide a stressed channel of a transi...

Patents Applicationslast 30 patents

LOGIC CIRCUIT, PROCESSING UNIT, ELECTRONIC COMPONENT, AND ELECTRONI...

SEMICONDUCTOR DEVICES

Semiconductor Device

STRAINED SEMICONDUCTOR USING ELASTIC EDGE RELAXATION OF A STRESSOR...

METHOD TO INDUCE STRAIN IN FINFET CHANNELS FROM AN ADJACENT REGION

GATE-ALL-AROUND (GAA) DEVICE INCLUDING A SUPERLATTICE

INTEGRATED CIRCUIT DEVICES AND FABRICATION TECHNIQUES

FinFET Device and Method of Forming Same

METHOD FOR MAKING SEMICONDUCTOR DEVICE INCLUDING SUPERLATTICE WITH...

SOI WAFERS AND DEVICES WITH BURIED STRESSORS

VERTICALLY STACKED FET WITH STRAINED CHANNEL

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THEREOF

STRAINED SEMICONDUCTOR ON INSULATOR (SSOI) BASED GATE ALL AROUND (G...

METHOD TO INDUCE STRAIN IN FINFET CHANNELS FROM AN ADJACENT REGION

FINFET EPI CHANNELS HAVING DIFFERENT HEIGHTS ON A STEPPED SUBSTRATE

Semiconductor Device

GATE-ALL-AROUND (GAA) DEVICE INCLUDING A SUPERLATTICE

METHOD FOR MAKING GATE-ALL-AROUND (GAA) DEVICE INCLUDING A SUPERLAT...

DEVICE, METHOD AND SYSTEM TO PROVIDE A STRESSED CHANNEL OF A TRANSI...

FIN TRIM PLUG STRUCTURES HAVING AN OXIDATION CATALYST LAYER SURROUN...

STRAINED NANOSHEETS ON SILICON-ON-INSULATOR SUBSTRATE

STRAINED SEMICONDUCTOR USING ELASTIC EDGE RELAXATION OF A STRESSOR...

Structure and Method for FinFET Device with Buried Sige Oxide

Semiconductor Device and Method

FIELD EFFECT TRANSISTOR INCLUDING MULTIPLE ASPECT TRAPPING RATIO ST...

LOGIC CIRCUIT, PROCESSING UNIT, ELECTRONIC COMPONENT, AND ELECTRONI...

METHOD AND STRUCTURE FOR FINFET DEVICES

Strain Enhanced SiC Power Semiconductor Device and Method of Manufa...

FinFET Device and Method of Forming Same

RELATING TO SOI WAFERS AND DEVICES WITH BURIED STRESSORS