the other device being a breakdown diode

Industry

CPC
H01L29/7821

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Parent Industries

HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

Current Industry

H01L29/7821the other device being a breakdown diode

Industries

Patents Grantslast 30 patents

Information Patent Grant
Multi-level gate driver applied to SiC MOSFET
- Patent number 12,199,150
- Issue date Jan 14, 2025
- University of Electronic Science and Technology of China
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power device integration on a common substrate
- Patent number 11,791,377
- Issue date Oct 17, 2023
- Silanna Asia Pte Ltd
- Jacek Korec
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Protection against electrostatic discharges and filtering
- Patent number 11,664,367
- Issue date May 30, 2023
- STMicroelectronics (Tours) SAS
- Patrick Poveda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench MOSFETs integrated with clamped diodes having trench field p...
- Patent number 11,600,725
- Issue date Mar 7, 2023
- NAMI MOS CO., LTD.
- Fu-Yuan Hsieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Protection against electrostatic discharges and filtering
- Patent number 11,329,040
- Issue date May 10, 2022
- STMicroelectronics (Tours) SAS
- Patrick Poveda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench MOSFETs integrated with clamped diodes having trench field p...
- Patent number 11,329,155
- Issue date May 10, 2022
- NAMI MOS CO., LTD.
- Fu-Yuan Hsieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Wide gap semiconductor device
- Patent number 11,309,415
- Issue date Apr 19, 2022
- Shindengen Electric Manufacturing Co., Ltd.
- Shunichi Nakamura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power device integration on a common substrate
- Patent number 11,302,775
- Issue date Apr 12, 2022
- Silanna Asia Pte Ltd
- Jacek Korec
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Switching converter with a self-operated negative boost switch
- Patent number 10,819,234
- Issue date Oct 27, 2020
- Texas Instruments Incorporated
- Ariel Dario Moctezuma
- H02 - GENERATION CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
Information Patent Grant
Lateral high electron mobility transistor with integrated clamp diode
- Patent number 10,734,486
- Issue date Aug 4, 2020
- QROMIS, Inc.
- Vladimir Odnoblyudov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Composite semiconductor device
- Patent number 10,707,204
- Issue date Jul 7, 2020
- SHARP KABUSHIKI KAISHA
- Seiichiro Kihara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lateral high electron mobility transistor with integrated clamp diode
- Patent number 10,490,636
- Issue date Nov 26, 2019
- QROMIS, Inc.
- Vladimir Odnoblyudov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Avalanche robust LDMOS
- Patent number 10,424,661
- Issue date Sep 24, 2019
- Silanna Asia Pte Ltd
- Shanghui Larry Tu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device comprising a transistor cell including a sourc...
- Patent number 10,381,475
- Issue date Aug 13, 2019
- Infineon Technologies Dresden GmbH
- Andreas Meiser
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices and methods for forming a semiconductor device
- Patent number 10,354,992
- Issue date Jul 16, 2019
- Infineon Technologies Dresden GmbH & Co. KG
- Joachim Weyers
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power device on bulk substrate
- Patent number 10,290,702
- Issue date May 14, 2019
- Silanna Asia Pte Ltd
- Michael A. Stuber
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power device integration on a common substrate
- Patent number 10,290,703
- Issue date May 14, 2019
- Silanna Asia Pte Ltd
- Jacek Korec
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Devices with an embedded zener diode
- Patent number 9,929,141
- Issue date Mar 27, 2018
- Allegro Microsystems, LLC
- Chung C. Kuo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device comprising a transistor cell including a sourc...
- Patent number 9,859,418
- Issue date Jan 2, 2018
- Infineon Technologies Dresden GmbH
- Andreas Meiser
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power device integration on a common substrate
- Patent number 9,825,124
- Issue date Nov 21, 2017
- Silanna Asia Pte Ltd
- Jacek Korec
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Insulated gate type semiconductor device and method for fabricating...
- Patent number 9,793,342
- Issue date Oct 17, 2017
- Renesas Electronics Corporation
- Hiroshi Inagawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with high breakdown voltage and manufacture th...
- Patent number 9,520,326
- Issue date Dec 13, 2016
- SOCIONEXT INC.
- Kazuhiko Takada
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power device integration on a common substrate
- Patent number 9,412,881
- Issue date Aug 9, 2016
- Silanna Asia Pte Ltd
- Jacek Korec
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor element and manufacturing method and operating method...
- Patent number 9,349,830
- Issue date May 24, 2016
- Macronix International Co., Ltd.
- Wing-Chor Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having high-resistance conductor structure, me...
- Patent number 9,343,568
- Issue date May 17, 2016
- Macronix International Co., Ltd.
- Wing-Chor Chan
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Insulated gate type semiconductor device and method for fabricating...
- Patent number 9,246,000
- Issue date Jan 26, 2016
- Renesas Electronics Corporation
- Hiroshi Inagawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power device integration on a common substrate
- Patent number 8,994,115
- Issue date Mar 31, 2015
- Silanna Semiconductor U.S.A., Inc.
- Jacek Korec
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power device integration on a common substrate
- Patent number 8,674,440
- Issue date Mar 18, 2014
- IO Semiconductor Inc.
- Jacek Korec
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Insulated gate type semiconductor device and method for fabricating...
- Patent number 8,642,401
- Issue date Feb 4, 2014
- Renesas Electronics Corporation
- Hiroshi Inagawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Monolithically-integrated dual surge protective device
- Patent number 8,541,838
- Issue date Sep 24, 2013
- North China University of Technology
- Yanfeng Jiang
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20240282851
- Publication date Aug 22, 2024
- ROHM CO., LTD.
- Yuji OSUMI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTI-LEVEL GATE DRIVER APPLIED TO SIC MOSFET
- Publication number 20230326973
- Publication date Oct 12, 2023
- University of Electronic Science and Technology of China
- Zekun ZHOU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PROTECTION AGAINST ELECTROSTATIC DISCHARGES AND FILTERING
- Publication number 20220238507
- Publication date Jul 28, 2022
- STMicroelectronics (Tours) SAS
- Patrick POVEDA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ZENER DIODE AND MANUFACTURING METHOD THEREOF
- Publication number 20220238727
- Publication date Jul 28, 2022
- RICHTEK TECHNOLOGY CORPORATION
- Ting-Wei Liao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRENCH MOSFETS INTEGRATED WITH CLAMPED DIODES HAVING TRENCH FIELD P...
- Publication number 20220231167
- Publication date Jul 21, 2022
- Nami MOS CO., LTD.
- Fu-Yuan HSIEH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRENCH MOSFETS INTEGRATED WITH CLAMPED DIODES HAVING TRENCH FIELD P...
- Publication number 20210265498
- Publication date Aug 26, 2021
- Nami MOS CO., LTD.
- Fu-Yuan HSIEH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SWITCHING CONVERTER WITH A SELF-OPERATED NEGATIVE BOOST SWITCH
- Publication number 20200099295
- Publication date Mar 26, 2020
- TEXAS INSTRUMENTS INCORPORATED
- Ariel Dario MOCTEZUMA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LATERAL HIGH ELECTRON MOBILITY TRANSISTOR WITH INTEGRATED CLAMP DIODE
- Publication number 20200044033
- Publication date Feb 6, 2020
- QROMIS, Inc.
- Vladimir Odnoblyudov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
AVALANCHE ROBUST LDMOS
- Publication number 20190312139
- Publication date Oct 10, 2019
- Silanna Asia Pte Ltd
- Shanghui Larry Tu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POWER DEVICE INTEGRATION ON A COMMON SUBSTRATE
- Publication number 20190245034
- Publication date Aug 8, 2019
- Silanna Asia Pte Ltd
- Jacek Korec
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
COMPOSITE SEMICONDUCTOR DEVICE
- Publication number 20180197855
- Publication date Jul 12, 2018
- SHARP KABUSHIKI KAISHA
- Seiichiro KIHARA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LATERAL HIGH ELECTRON MOBILITY TRANSISTOR WITH INTEGRATED CLAMP DIODE
- Publication number 20180158917
- Publication date Jun 7, 2018
- QROMIS, Inc.
- Vladimir Odnoblyudov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Devices and Methods for Forming a Semiconductor Device
- Publication number 20180090479
- Publication date Mar 29, 2018
- INFINEON TECHNOLOGIES DRESDEN GMBH
- Joachim Weyers
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POWER DEVICE INTEGRATION ON A COMMON SUBSTRATE
- Publication number 20180069077
- Publication date Mar 8, 2018
- Silanna Asia Pte Ltd
- Jacek Korec
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE COMPRISING A TRANSISTOR CELL INCLUDING A SOURC...
- Publication number 20180040729
- Publication date Feb 8, 2018
- INFINEON TECHNOLOGIES DRESDEN GMBH
- Andreas MEISER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEVICES WITH AN EMBEDDED ZENER DIODE
- Publication number 20170287894
- Publication date Oct 5, 2017
- Allegro Microsystems, LLC
- Chung C. Kuo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POWER DEVICE ON BULK SUBSTRATE
- Publication number 20170229536
- Publication date Aug 10, 2017
- Silanna Asia Pte Ltd
- Michael A. Stuber
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE COMPRISING A TRANSISTOR CELL INCLUDING A SOURC...
- Publication number 20170047443
- Publication date Feb 16, 2017
- INFINEON TECHNOLOGIES DRESDEN GMBH
- Andreas MEISER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE, METHOD OF MANUFACTURING THE SAME AND METHOD O...
- Publication number 20150325694
- Publication date Nov 12, 2015
- Macronix International Co., Ltd.
- Wing-Chor Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH HIGH BREAKDOWN VOLTAGE AND MANUFACTURE TH...
- Publication number 20150147855
- Publication date May 28, 2015
- FUJITSU SEMICONDUCTOR LIMITED
- Kazuhiko Takada
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POWER DEVICE INTEGRATION ON A COMMON SUBSTRATE
- Publication number 20140291762
- Publication date Oct 2, 2014
- Jacek Korec
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR ELEMENT AND MANUFACTURING METHOD AND OPERATING METHOD...
- Publication number 20140253224
- Publication date Sep 11, 2014
- Macronix International Co., Ltd.
- Wing-Chor Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INSULATED GATE TYPE SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING...
- Publication number 20140110780
- Publication date Apr 24, 2014
- Renesas Eastern Japan Semiconductor, Inc.
- Hiroshi INAGAWA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POWER DEVICE INTEGRATION ON A COMMON SUBSTRATE
- Publication number 20140035047
- Publication date Feb 6, 2014
- Jacek Korec
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POWER DEVICE INTEGRATION ON A COMMON SUBSTRATE
- Publication number 20140035032
- Publication date Feb 6, 2014
- Jacek Korec
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH HIGH BREAKDOWN VOLTAGE AND MANUFACTURE TH...
- Publication number 20130168768
- Publication date Jul 4, 2013
- FUJITSU SEMICONDUCTOR LIMITED
- Kazuhiko Takada
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INSULATED GATE TYPE SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING...
- Publication number 20130137223
- Publication date May 30, 2013
- Hitachi Tobu Semiconductor, Ltd.
- HIROSHI INAGAWA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE LIMITING ELECTRICAL DISCHARGE OF CHARGE
- Publication number 20120217581
- Publication date Aug 30, 2012
- Sanken Electric Co., Ltd
- Satoshi KONDOU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Monolithically-Integrated New Dual Surge Protective Device and Its...
- Publication number 20120175704
- Publication date Jul 12, 2012
- NORTH CHINA UNIVERSITY OF TECHNOLOGY
- Yanfeng Jiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Self protected snapback device driven by driver circuitry using hig...
- Publication number 20120154956
- Publication date Jun 21, 2012
- National Semiconductor Corporation
- Vladislav Vashchenko
- H03 - BASIC ELECTRONIC CIRCUITRY

the other device being a breakdown diode

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Multi-level gate driver applied to SiC MOSFET

Power device integration on a common substrate

Protection against electrostatic discharges and filtering

Trench MOSFETs integrated with clamped diodes having trench field p...

Protection against electrostatic discharges and filtering

Trench MOSFETs integrated with clamped diodes having trench field p...

Wide gap semiconductor device

Power device integration on a common substrate

Switching converter with a self-operated negative boost switch

Lateral high electron mobility transistor with integrated clamp diode

Composite semiconductor device

Lateral high electron mobility transistor with integrated clamp diode

Avalanche robust LDMOS

Semiconductor device comprising a transistor cell including a sourc...

Semiconductor devices and methods for forming a semiconductor device

Power device on bulk substrate

Power device integration on a common substrate

Devices with an embedded zener diode

Semiconductor device comprising a transistor cell including a sourc...

Power device integration on a common substrate

Insulated gate type semiconductor device and method for fabricating...

Semiconductor device with high breakdown voltage and manufacture th...

Power device integration on a common substrate

Semiconductor element and manufacturing method and operating method...

Semiconductor device having high-resistance conductor structure, me...

Insulated gate type semiconductor device and method for fabricating...

Power device integration on a common substrate

Power device integration on a common substrate

Insulated gate type semiconductor device and method for fabricating...

Monolithically-integrated dual surge protective device

Patents Applicationslast 30 patents

SEMICONDUCTOR DEVICE

MULTI-LEVEL GATE DRIVER APPLIED TO SIC MOSFET

PROTECTION AGAINST ELECTROSTATIC DISCHARGES AND FILTERING

ZENER DIODE AND MANUFACTURING METHOD THEREOF

TRENCH MOSFETS INTEGRATED WITH CLAMPED DIODES HAVING TRENCH FIELD P...

TRENCH MOSFETS INTEGRATED WITH CLAMPED DIODES HAVING TRENCH FIELD P...

SWITCHING CONVERTER WITH A SELF-OPERATED NEGATIVE BOOST SWITCH

LATERAL HIGH ELECTRON MOBILITY TRANSISTOR WITH INTEGRATED CLAMP DIODE

AVALANCHE ROBUST LDMOS

POWER DEVICE INTEGRATION ON A COMMON SUBSTRATE

COMPOSITE SEMICONDUCTOR DEVICE

LATERAL HIGH ELECTRON MOBILITY TRANSISTOR WITH INTEGRATED CLAMP DIODE

Semiconductor Devices and Methods for Forming a Semiconductor Device

POWER DEVICE INTEGRATION ON A COMMON SUBSTRATE

SEMICONDUCTOR DEVICE COMPRISING A TRANSISTOR CELL INCLUDING A SOURC...

DEVICES WITH AN EMBEDDED ZENER DIODE

POWER DEVICE ON BULK SUBSTRATE

SEMICONDUCTOR DEVICE COMPRISING A TRANSISTOR CELL INCLUDING A SOURC...

SEMICONDUCTOR DEVICE, METHOD OF MANUFACTURING THE SAME AND METHOD O...

SEMICONDUCTOR DEVICE WITH HIGH BREAKDOWN VOLTAGE AND MANUFACTURE TH...

POWER DEVICE INTEGRATION ON A COMMON SUBSTRATE

SEMICONDUCTOR ELEMENT AND MANUFACTURING METHOD AND OPERATING METHOD...

INSULATED GATE TYPE SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING...

POWER DEVICE INTEGRATION ON A COMMON SUBSTRATE

POWER DEVICE INTEGRATION ON A COMMON SUBSTRATE

SEMICONDUCTOR DEVICE WITH HIGH BREAKDOWN VOLTAGE AND MANUFACTURE TH...

INSULATED GATE TYPE SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING...

SEMICONDUCTOR DEVICE LIMITING ELECTRICAL DISCHARGE OF CHARGE

Monolithically-Integrated New Dual Surge Protective Device and Its...

Self protected snapback device driven by driver circuitry using hig...