the other device being a controlling field-effect device

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H01L29/66378

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

Current Industry

H01L29/66378the other device being a controlling field-effect device

Industries

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Patents Grantslast 30 patents

Information Patent Grant
MOS(metal oxide silicon) controlled thyristor device
- Patent number 11,784,247
- Issue date Oct 10, 2023
- Electronics and Telecommunications Research Institute
- Kun Sik Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Metal oxide semiconductor-controlled thyristor device having unifor...
- Patent number 11,637,192
- Issue date Apr 25, 2023
- Electronics and Telecommunications Research Institute
- Kun Sik Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Automatically limiting power consumption by devices using infrared...
- Patent number 11,289,619
- Issue date Mar 29, 2022
- Dell Products L.P.
- Gian Martini
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Transistor structures having reduced electrical field at the gate o...
- Patent number 10,840,367
- Issue date Nov 17, 2020
- Cree, Inc.
- Qingchun Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical insulated gate turn-off thyristor with intermediate p+ lay...
- Patent number 10,777,670
- Issue date Sep 15, 2020
- Pakal Technologies, Inc.
- Hidenori Akiyama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having thyristor and metal-oxide semiconductor...
- Patent number 10,541,241
- Issue date Jan 21, 2020
- United Microelectronics Corp.
- Yukihiro Nagai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET SCR with SCR implant under anode and cathode junctions
- Patent number 10,535,762
- Issue date Jan 14, 2020
- INDIAN INSTITUTE OF SCIENCE
- Mayank Shrivastava
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having thyristor and metal-oxide semiconductor...
- Patent number 10,388,656
- Issue date Aug 20, 2019
- United Microelectronics Corp.
- Yukihiro Nagai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of integrating thyristor and metal-oxide semiconductor trans...
- Patent number 10,134,736
- Issue date Nov 20, 2018
- UNITED MICROELECTRONICS CORP.
- Yukihiro Nagai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor structures having reduced electrical field at the gate o...
- Patent number 9,530,844
- Issue date Dec 27, 2016
- Cree, Inc.
- Qingchun Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure of a trench MOS rectifier and method of forming the same
- Patent number 9,406,788
- Issue date Aug 2, 2016
- Qinhai Jin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure of a trench MOS rectifier and method of forming the same
- Patent number 9,276,096
- Issue date Mar 1, 2016
- Chip Integration Tech. Co., Ltd.
- Qinhai Jin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electronic device structure with a semiconductor ledge layer for su...
- Patent number 9,059,197
- Issue date Jun 16, 2015
- Cree, Inc.
- Qingchun Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Interface protection device with integrated supply clamp and method...
- Patent number 9,006,782
- Issue date Apr 14, 2015
- Analog Devices, Inc.
- Javier Alejandro Salcedo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Interface protection device with integrated supply clamp and method...
- Patent number 8,860,080
- Issue date Oct 14, 2014
- Analog Devices, Inc.
- Javier Alejandro Salcedo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electronic device structure with a semiconductor ledge layer for su...
- Patent number 8,809,904
- Issue date Aug 19, 2014
- Cree, Inc.
- Qingchun Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrating a trench-gated thyristor with a trench-gated rectifier
- Patent number 8,742,456
- Issue date Jun 3, 2014
- Pakal Technologies LLC
- Hidenori Akiyama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Systems and methods integrating trench-gated thyristor with trench-...
- Patent number 8,569,117
- Issue date Oct 29, 2013
- Pakal Technologies LLC
- Hidenori Akiyama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Thyristor semiconductor device and method of manufacture
- Patent number 7,804,107
- Issue date Sep 28, 2010
- T-RAM Semiconductor, Inc.
- Andrew E. Horch
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power device with high switching speed and manufacturing method the...
- Patent number 7,755,139
- Issue date Jul 13, 2010
- STMicroelectronics S.r.l.
- Cesare Ronsisvalle
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory cell with trenched gated thyristor
- Patent number 7,440,310
- Issue date Oct 21, 2008
- Micron Technology, Inc.
- Arup Bhattacharyya
- G11 - INFORMATION STORAGE
Information Patent Grant
Thyristor-based device with trench dielectric material
- Patent number 7,374,974
- Issue date May 20, 2008
- T-RAM Semiconductor, Inc.
- Andrew Horch
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Thyristor-based SRAM
- Patent number 7,285,804
- Issue date Oct 23, 2007
- Chartered Semiconductor Manufacturing Ltd.
- Elgin Quek
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a thyristor semiconductor device
- Patent number 7,279,367
- Issue date Oct 9, 2007
- T-RAM Semiconductor, Inc.
- Andrew E. Horch
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicide uniformity for lateral bipolar transistors
- Patent number 7,262,443
- Issue date Aug 28, 2007
- T-Ram Semiconductor Inc.
- Kevin J. Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor element
- Patent number 7,242,036
- Issue date Jul 10, 2007
- Mitsubishi Electric Corporation
- Nobuhisa Nakashima
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory cell with trenched gated thyristor
- Patent number 7,145,186
- Issue date Dec 5, 2006
- Micron Technology, Inc.
- Arup Bhattacharyya
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor device including trench with at least one of an edge...
- Patent number 7,067,874
- Issue date Jun 27, 2006
- Mitsubishi Denki Kabushiki Kaisha
- Katsumi Nakamura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method using quasi-planar double gated fin field effect transistor...
- Patent number 6,897,111
- Issue date May 24, 2005
- Chartered Semiconductor Manufacturing Ltd.
- Elgin Quek
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 6,867,437
- Issue date Mar 15, 2005
- Mitsubishi Denki Kabushiki Kaisha
- Tetsuo Takahashi
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
MOS(METAL OXIDE SILICON) CONTROLLED THYRISTOR DEVICE
- Publication number 20230087416
- Publication date Mar 23, 2023
- ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE
- Kun Sik PARK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF FORMING A SEMICONDUCTOR STRUCTURE
- Publication number 20220130984
- Publication date Apr 28, 2022
- National Central University
- Yue-Ming HSIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METAL OXIDE SEMICONDUCTOR-CONTROLLED THYRISTOR DEVICE HAVING UNIFOR...
- Publication number 20210408265
- Publication date Dec 30, 2021
- ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE
- Kun Sik PARK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
AUTOMATICALLY LIMITING POWER CONSUMPTION BY DEVICES USING INFRARED...
- Publication number 20210135037
- Publication date May 6, 2021
- Dell Products L.P.
- Gian Martini
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL INSULATED GATE TURN-OFF THYRISTOR WITH INTERMEDIATE P+ LAY...
- Publication number 20190393331
- Publication date Dec 26, 2019
- Pakal Technologies, Inc.
- Hidenori Akiyama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE HAVING THYRISTOR AND METAL-OXIDE SEMICONDUCTOR...
- Publication number 20190043863
- Publication date Feb 7, 2019
- UNITED MICROELECTRONICS CORP.
- Yukihiro Nagai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE HAVING THYRISTOR AND METAL-OXIDE SEMICONDUCTOR...
- Publication number 20190035789
- Publication date Jan 31, 2019
- UNITED MICROELECTRONICS CORP.
- Yukihiro Nagai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
- Publication number 20180277545
- Publication date Sep 27, 2018
- UNITED MICROELECTRONICS CORP.
- Yukihiro Nagai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FINFET SCR WITH SCR IMPLANT UNDER ANODE AND CATHODE JUNCTIONS
- Publication number 20180248025
- Publication date Aug 30, 2018
- Indian Institute of Science
- Mayank Shrivastava
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Vertical Thyristor Cell and Memory Array with Silicon Germanium Bas...
- Publication number 20180130804
- Publication date May 10, 2018
- Kilopass Technology, Inc.
- Harry Luan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR STRUCTURES HAVING REDUCED ELECTRICAL FIELD AT THE GATE O...
- Publication number 20170053987
- Publication date Feb 23, 2017
- Cree, Inc.
- Qingchun Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES AND A METHOD FOR FORMING A SEMICONDUCTOR DEVICE
- Publication number 20160240644
- Publication date Aug 18, 2016
- INFINEON TECHNOLOGIES AG
- Marten Müller
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ELECTRONIC DEVICE STRUCTURE WITH A SEMICONDUCTOR LEDGE LAYER FOR SU...
- Publication number 20150111347
- Publication date Apr 23, 2015
- Cree, Inc.
- Qingchun Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Structure of a Trench MOS Rectifier and Method of Forming the Same
- Publication number 20140374790
- Publication date Dec 25, 2014
- Chip Integration Tech.Co., Ltd.
- QINHAI JIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR STRUCTURES HAVING REDUCED ELECTRICAL FIELD AT THE GATE O...
- Publication number 20140183553
- Publication date Jul 3, 2014
- Cree, Inc.
- Qingchun Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTERFACE PROTECTION DEVICE WITH INTEGRATED SUPPLY CLAMP AND METHOD...
- Publication number 20140167104
- Publication date Jun 19, 2014
- Analog Devices, Inc.
- Javier Alejandro Salcedo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTERFACE PROTECTION DEVICE WITH INTEGRATED SUPPLY CLAMP AND METHOD...
- Publication number 20140167106
- Publication date Jun 19, 2014
- Analog Devices, Inc.
- Javier Alejandro Salcedo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATING A TRENCH-GATED THYRISTOR WITH A TRENCH-GATED RECTIFIER
- Publication number 20140054641
- Publication date Feb 27, 2014
- PAKAL TECHNOLOGIES, LLC
- Hidenori Akiyama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Systems and Methods Integrating Trench-Gated Thyristor With Trench-...
- Publication number 20130115739
- Publication date May 9, 2013
- PAKAL TECHNOLOGIES, LLC
- Hidenori Akiyama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ELECTRONIC DEVICE STRUCTURE WITH A SEMICONDUCTOR LEDGE LAYER FOR SU...
- Publication number 20120018738
- Publication date Jan 26, 2012
- Cree, Inc.
- Qingchun Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
- Publication number 20090075477
- Publication date Mar 19, 2009
- Fujitsu Microelectronics Limited
- Kazuo KAWAMURA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Power device with high switching speed and manufacturing method the...
- Publication number 20070090415
- Publication date Apr 26, 2007
- STMicroelectronics S.r.l.
- Cesare Ronsisvalle
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Memory cell with trenched gated thyristor
- Publication number 20060227601
- Publication date Oct 12, 2006
- Micron Technology, Inc.
- Arup Bhattacharyya
- G11 - INFORMATION STORAGE
Information Patent Application
Memory cell with trenched gated thyristor
- Publication number 20060043411
- Publication date Mar 2, 2006
- Micron Technology, Inc.
- Arup Bhattacharyya
- G11 - INFORMATION STORAGE
Information Patent Application
Thyristor-based SRAM
- Publication number 20050167664
- Publication date Aug 4, 2005
- CHARTERED SEMICONDUCTOR MANUFACTURING, LTD.
- Elgin Quek
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Thyistor-based SRAM and method using quasi-planar finfet process fo...
- Publication number 20050026343
- Publication date Feb 3, 2005
- Chartered Semiconductor Manufacturing LTD.
- Elgin Quek
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device including trench with at least one of an edge...
- Publication number 20030203573
- Publication date Oct 30, 2003
- Mitsubishi Denki Kabushiki Kaisha
- Katsumi Nakamura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of manufacturing semiconductor device having trench filled u...
- Publication number 20030141514
- Publication date Jul 31, 2003
- Hitoshi Yamaguchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and manufacturing method thereof
- Publication number 20030006456
- Publication date Jan 9, 2003
- Mitsubishi Denki Kabushiki Kaisha
- Tetsuo Takahashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and manufacturing method thereof
- Publication number 20010045566
- Publication date Nov 29, 2001
- Mitsubishi Denki Kabushiki Kaisha
- Tetsuo Takahashi
- H01 - BASIC ELECTRIC ELEMENTS

the other device being a controlling field-effect device

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

MOS(metal oxide silicon) controlled thyristor device

Metal oxide semiconductor-controlled thyristor device having unifor...

Automatically limiting power consumption by devices using infrared...

Transistor structures having reduced electrical field at the gate o...

Vertical insulated gate turn-off thyristor with intermediate p+ lay...

Semiconductor device having thyristor and metal-oxide semiconductor...

FinFET SCR with SCR implant under anode and cathode junctions

Semiconductor device having thyristor and metal-oxide semiconductor...

Method of integrating thyristor and metal-oxide semiconductor trans...

Transistor structures having reduced electrical field at the gate o...

Structure of a trench MOS rectifier and method of forming the same

Structure of a trench MOS rectifier and method of forming the same

Electronic device structure with a semiconductor ledge layer for su...

Interface protection device with integrated supply clamp and method...

Interface protection device with integrated supply clamp and method...

Electronic device structure with a semiconductor ledge layer for su...

Integrating a trench-gated thyristor with a trench-gated rectifier

Systems and methods integrating trench-gated thyristor with trench-...

Thyristor semiconductor device and method of manufacture

Power device with high switching speed and manufacturing method the...

Memory cell with trenched gated thyristor

Thyristor-based device with trench dielectric material

Thyristor-based SRAM

Method of manufacturing a thyristor semiconductor device

Silicide uniformity for lateral bipolar transistors

Semiconductor element

Memory cell with trenched gated thyristor

Semiconductor device including trench with at least one of an edge...

Method using quasi-planar double gated fin field effect transistor...

Semiconductor device

Patents Applicationslast 30 patents

MOS(METAL OXIDE SILICON) CONTROLLED THYRISTOR DEVICE

SEMICONDUCTOR DEVICE AND METHOD OF FORMING A SEMICONDUCTOR STRUCTURE

METAL OXIDE SEMICONDUCTOR-CONTROLLED THYRISTOR DEVICE HAVING UNIFOR...

AUTOMATICALLY LIMITING POWER CONSUMPTION BY DEVICES USING INFRARED...

VERTICAL INSULATED GATE TURN-OFF THYRISTOR WITH INTERMEDIATE P+ LAY...

SEMICONDUCTOR DEVICE HAVING THYRISTOR AND METAL-OXIDE SEMICONDUCTOR...

SEMICONDUCTOR DEVICE HAVING THYRISTOR AND METAL-OXIDE SEMICONDUCTOR...

SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

FINFET SCR WITH SCR IMPLANT UNDER ANODE AND CATHODE JUNCTIONS

Vertical Thyristor Cell and Memory Array with Silicon Germanium Bas...

TRANSISTOR STRUCTURES HAVING REDUCED ELECTRICAL FIELD AT THE GATE O...

SEMICONDUCTOR DEVICES AND A METHOD FOR FORMING A SEMICONDUCTOR DEVICE

ELECTRONIC DEVICE STRUCTURE WITH A SEMICONDUCTOR LEDGE LAYER FOR SU...

Structure of a Trench MOS Rectifier and Method of Forming the Same

TRANSISTOR STRUCTURES HAVING REDUCED ELECTRICAL FIELD AT THE GATE O...

INTERFACE PROTECTION DEVICE WITH INTEGRATED SUPPLY CLAMP AND METHOD...

INTERFACE PROTECTION DEVICE WITH INTEGRATED SUPPLY CLAMP AND METHOD...

INTEGRATING A TRENCH-GATED THYRISTOR WITH A TRENCH-GATED RECTIFIER

Systems and Methods Integrating Trench-Gated Thyristor With Trench-...

ELECTRONIC DEVICE STRUCTURE WITH A SEMICONDUCTOR LEDGE LAYER FOR SU...

METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

Power device with high switching speed and manufacturing method the...

Memory cell with trenched gated thyristor

Memory cell with trenched gated thyristor

Thyristor-based SRAM

Thyistor-based SRAM and method using quasi-planar finfet process fo...

Semiconductor device including trench with at least one of an edge...

Method of manufacturing semiconductor device having trench filled u...

Semiconductor device and manufacturing method thereof

Semiconductor device and manufacturing method thereof