the principal constituent melting at a temperature of greater than 1550°C

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H01L2224/05163

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00

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H01L2224/05163the principal constituent melting at a temperature of greater than 1550°C

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Information Patent Grant
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the principal constituent melting at a temperature of greater than 1550°C

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Bonded semiconductor die assembly with metal alloy bonding pads and...

Semiconductor substrate having a bond pad material based on aluminum

Bond pads of semiconductor devices

Semiconductor device and method of manufacturing semiconductor device

Two-component bump metallization

Two-component bump metallization

Hermetically sealed MEMS device and its fabrication

Electronic device and method for production

Power semiconductor devices

Structure and method for corrosion and stress-resistant interconnec...

Structure and method for corrosion and stress-resistant interconnec...

Patents Applicationslast 30 patents

SEMICONDUCTOR PACKAGE AND METHOD FOR MANUFACTURING THE SAME

EXPANSION CONTROLLED STRUCTURE FOR DIRECT BONDING AND METHOD OF FOR...

BONDED SEMICONDUCTOR DIE ASSEMBLY WITH METAL ALLOY BONDING PADS AND...

BOND PADS OF SEMICONDUCTOR DEVICES

Semiconductor Substrate Having a Bond Pad Material Based on Aluminum

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

TWO-COMPONENT BUMP METALLIZATION

TWO-COMPONENT BUMP METALLIZATION

ELECTRONIC DEVICE AND METHOD FOR PRODUCTION

POWER SEMICONDUCTOR DEVICES