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the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
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CPC
H01L2224/29617
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Parent Industries
H
ELECTRICITY
H01
Electric elements
H01L
SEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
H01L2224/00
Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
Current Industry
H01L2224/29617
the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
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Patents Grants
last 30 patents
Information
Patent Grant
Method and structure for wafer to wafer bonding in semiconductor pa...
Patent number
8,377,798
Issue date
Feb 19, 2013
Taiwan Semiconductor Manufacturing Co., Ltd.
Jung-Huei Peng
B81 - MICRO-STRUCTURAL TECHNOLOGY
Patents Applications
last 30 patents
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Patent Application
METHOD AND STRUCTURE FOR WAFER TO WAFER BONDING IN SEMICONDUCTOR PA...
Publication number
20120115305
Publication date
May 10, 2012
Taiwan Semiconductor Manufacturing Co., LTD
Jung-Huei PENG
B81 - MICRO-STRUCTURAL TECHNOLOGY