the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C

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H01L2224/45417

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00

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H01L2224/45417the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C

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Patents Grantslast 30 patents

Information Patent Grant
Manufacturing method of semiconductor device and semiconductor device
- Patent number 9,385,071
- Issue date Jul 5, 2016
- Renesas Electronics Corporation
- Yoshiharu Kaneda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Manufacturing method of semiconductor device and semiconductor device
- Patent number 9,076,777
- Issue date Jul 7, 2015
- Renesas Electronics Corporation
- Yoshiharu Kaneda
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE
- Publication number 20140070389
- Publication date Mar 13, 2014
- RENESAS ELECTRONICS CORPORATION
- Yoshiharu Kaneda
- H01 - BASIC ELECTRIC ELEMENTS