the relationship of pull rate (v) to axial thermal gradient (G)

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CPC
C30B15/203

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CCHEMISTRY METALLURGY C30Crystal growth C30BSINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL REFINING BY ZONE-MELTING OF MATERIAL PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH D... C30B15/00Single-crystal growth by pulling from a melt

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C30B15/203the relationship of pull rate (v) to axial thermal gradient (G)

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the relationship of pull rate (v) to axial thermal gradient (G)

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Silicon wafer and manufacturing method of the same

Methods for forming a silicon substrate with reduced grown-in nucle...

Methods for forming a silicon substrate with reduced grown-in nucle...

Method for pulling a cylindrical crystal from a melt

Process for preparing ingot having reduced distortion at late body...

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Silicon wafer and manufacturing method of the same

Methods for growing a nitrogen doped single crystal silicon ingot u...

Single crystal silicon ingot having axial uniformity

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Single crystal of silicon with <100> orientation, which is doped wi...

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Single crystal silicon ingot having axial uniformity

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Epitaxial silicon wafer

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Patents Applicationslast 30 patents

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METHODS FOR PRODUCING SINGLE CRYSTAL SILICON WAFERS FOR INSULATED G...

VACANCY-RICH SILICON FOR USE WITH A GALLIUM NITRIDE EPITAXIAL LAYER

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