the solvent being a component of the crystal composition

Industry

CPC
C30B19/04

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Parent Industries

CCHEMISTRY METALLURGY C30Crystal growth C30BSINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL REFINING BY ZONE-MELTING OF MATERIAL PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH D... C30B19/00Liquid-phase epitaxial-layer growth

Current Industry

C30B19/04the solvent being a component of the crystal composition

Industries

Patents Grantslast 30 patents

Information Patent Grant
SiC crucible, SiC sintered body, and method of producing SiC single...
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- Issue date Sep 13, 2022
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- Naofumi Shinya
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Silicon-based molten composition and method for manufacturing silic...
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- Dexerials Corporation
- Kazuhiro Yagihashi
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Information Patent Grant
SiC single crystal production method and production apparatus
- Patent number 10,968,535
- Issue date Apr 6, 2021
- Toyota Jidosha Kabushiki Kaisha
- Masayoshi Doi
- C30 - CRYSTAL GROWTH
Information Patent Grant
Silicon-based molten composition and manufacturing method of SiC si...
- Patent number 10,718,065
- Issue date Jul 21, 2020
- LG Chem, Ltd.
- Chan Yeup Chung
- C30 - CRYSTAL GROWTH
Information Patent Grant
Silicon-based molten composition and manufacturing method of SiC si...
- Patent number 10,662,547
- Issue date May 26, 2020
- LG Chem, Ltd.
- Chan Yeup Chung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SiC single crystal production method and production apparatus
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- Issue date May 5, 2020
- Toyota Jidosha Kabushiki Kaisha
- Masayoshi Doi
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Lead oxychloride, infrared nonlinear optical crystal, and preparati...
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- Issue date Apr 21, 2020
- XINJIANG TECHNICAL INSTITUTE OF PHYSICS & CHEMISTRY, CHINESE ACADEMY OF SCIENCES
- Shilie Pan
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Method for preparing SiC single crystal
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- Issue date Apr 7, 2020
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Information Patent Grant
Method for manufacturing semiconductor wafer
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- Issue date Dec 17, 2019
- Kwansei Gakuin Educational Foundation
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Information Patent Grant
Method of producing crystal
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- Issue date Oct 15, 2019
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Information Patent Grant
SiC single crystal and production method thereof
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- Issue date Oct 1, 2019
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- Katsunori Danno
- C30 - CRYSTAL GROWTH
Information Patent Grant
SiC single crystal and method for producing same
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- Issue date Sep 17, 2019
- Toyota Jidosha Kabushiki Kaisha
- Takayuki Shirai
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method and apparatus for producing crystalline cladding and crystal...
- Patent number 10,274,673
- Issue date Apr 30, 2019
- The Penn State Research Foundation
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- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for producing silicon carbide single crystal in a solution p...
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- Issue date Apr 16, 2019
- Toyota Jidosha Kabushiki Kaisha
- Katsunori Danno
- C30 - CRYSTAL GROWTH
Information Patent Grant
N-type SiC single crystal and method for its production
- Patent number 10,167,570
- Issue date Jan 1, 2019
- Toyota Jidosha Kabushiki Kaisha
- Takayuki Shirai
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for manufacturing a silicon carbide wafer using a susceptor...
- Patent number 10,153,207
- Issue date Dec 11, 2018
- STMicroelectronics S.r.l.
- Ferruccio Frisina
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for producing crystal
- Patent number 10,151,045
- Issue date Dec 11, 2018
- KYOCERA Corporation
- Chiaki Domoto
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for producing SiC single crystal
- Patent number 10,145,025
- Issue date Dec 4, 2018
- Toyota Jidosha Kabushiki Kaisha
- Kazuaki Seki
- C30 - CRYSTAL GROWTH
Information Patent Grant
SiC single crystal and method for producing same
- Patent number 10,094,044
- Issue date Oct 9, 2018
- Toyota Jidosha Kabushiki Kaisha
- Katsunori Danno
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for producing sic single crystal having low defects by solut...
- Patent number 10,087,549
- Issue date Oct 2, 2018
- Toyota Jidosha Kabushiki Kaisha
- Katsunori Danno
- C30 - CRYSTAL GROWTH
Information Patent Grant
SiC single crystal production method and production apparatus
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- Issue date Sep 25, 2018
- Toyota Jidosha Kabushiki Kaisha
- Motohisa Kado
- C30 - CRYSTAL GROWTH
Information Patent Grant
Li4Sr(BO3)2 compound, Li4Sr(BO3)2 nonlinear optical crystal, prepar...
- Patent number 10,005,675
- Issue date Jun 26, 2018
- ECHNICAL INSTITUTE OF PHYSICS AND CHEMISTRY, CHINESE ACADEMY OF SCIENCES
- Guochun Zhang
- C01 - INORGANIC CHEMISTRY
Information Patent Grant
Method and apparatus for producing crystalline cladding and crystal...
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- Issue date Jun 12, 2018
- The Penn State Research Foundation
- Shizhuo Yin
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for producing SiC single crystal
- Patent number 9,982,365
- Issue date May 29, 2018
- Toyota Jidosha Kabushiki Kaisha
- Katsunori Danno
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for growing silicon carbide crystal
- Patent number 9,951,439
- Issue date Apr 24, 2018
- Shin-Etsu Chemical Co., Ltd.
- Naofumi Shinya
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for producing SiC substrate
- Patent number 9,951,441
- Issue date Apr 24, 2018
- Toyota Jidosha Kabushiki Kaisha
- Katsunori Danno
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for preparing single-crystal cubic sesquioxides and uses
- Patent number 9,945,049
- Issue date Apr 17, 2018
- CENTRE NATIONAL DE LA RECHERCHE SCINTIFIQI
- Philippe Veber
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for growing silicon carbide crystal
- Patent number 9,945,047
- Issue date Apr 17, 2018
- Shin-Etsu Chemical Co., Ltd.
- Naofumi Shinya
- C30 - CRYSTAL GROWTH
Information Patent Grant
Production method of SiC single crystal
- Patent number 9,920,449
- Issue date Mar 20, 2018
- Toyota Jidosha Kabushiki Kaisha
- Kazuhiko Kusunoki
- C30 - CRYSTAL GROWTH

Patents Applicationslast 30 patents

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GROUP 13 ELEMENT NITRIDE CRYSTAL LAYER GROWTH METHOD, NITRIDE SEMIC...
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- C30 - CRYSTAL GROWTH
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GROUP-III ELEMENT NITRIDE SEMICONDUCTOR SUBSTRATE
- Publication number 20230220587
- Publication date Jul 13, 2023
- NGK Insulators, Ltd.
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- C30 - CRYSTAL GROWTH
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BISMUTH-SUBSTITUTED RARE EARTH IRON GARNET SINGLE CRYSTAL, FARADAY...
- Publication number 20230194902
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- Shin-Etsu Chemical Co., Ltd.
- Toshiaki WATANABE
- C01 - INORGANIC CHEMISTRY
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SEMICONDUCTOR DEVICE
- Publication number 20230066135
- Publication date Mar 2, 2023
- Sanken Electric Co., Ltd
- Toru YOSHIE
- C30 - CRYSTAL GROWTH
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Composite Wavelength Converter
- Publication number 20220393080
- Publication date Dec 8, 2022
- Friedrich-Alexander-Universitat Erlangen-Nurnberg
- Yuriy Zorenko
- C30 - CRYSTAL GROWTH
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METHOD FOR PRODUCING GROUP III NITRIDE SEMICONDUCTOR
- Publication number 20200299858
- Publication date Sep 24, 2020
- Toyoda Gosei Co., Ltd.
- Shiro YAMAZAKI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR PRODUCING GALLIUM NITRIDE STACKED BODY
- Publication number 20190218684
- Publication date Jul 18, 2019
- DEXERIALS CORPORATION
- Makoto WATANABE
- C30 - CRYSTAL GROWTH
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Silicon-Based Molten Composition And Method For Manufacturing Silic...
- Publication number 20190106806
- Publication date Apr 11, 2019
- LG CHEM, LTD.
- Chan Yeup Chung
- C01 - INORGANIC CHEMISTRY
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METHOD FOR MANUFACTURING SINGLE-CRYSTAL SiC, AND HOUSING CONTAINER
- Publication number 20190010629
- Publication date Jan 10, 2019
- TOYO TANSO CO., LTD
- Norihito YABUKI
- C30 - CRYSTAL GROWTH
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METHOD FOR MANUFACTURING SEMICONDUCTOR WAFER
- Publication number 20180312992
- Publication date Nov 1, 2018
- KWANSEI GAKUIN EDUCATIONAL FOUNDATION
- Tadaaki Kaneko
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD OF PRODUCING SiC SINGLE CRYSTAL
- Publication number 20180230623
- Publication date Aug 16, 2018
- Shin-Etsu Chemical Co., Ltd.
- Naofumi SHINYA
- C30 - CRYSTAL GROWTH
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METHOD AND APPARATUS FOR PRODUCING CRYSTALLINE CLADDING AND CRYSTAL...
- Publication number 20180203183
- Publication date Jul 19, 2018
- The Penn State Research Foundation
- Shizhuo YIN
- C30 - CRYSTAL GROWTH
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METHOD FOR PRODUCING GROUP 13 NITRIDE SINGLE CRYSTAL AND APPARATUS...
- Publication number 20180163323
- Publication date Jun 14, 2018
- Takashi Satoh
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR PRODUCING SIC SINGLE CRYSTAL
- Publication number 20180100247
- Publication date Apr 12, 2018
- Toyota Jidosha Kabushiki Kaisha
- Katsunori DANNO
- C30 - CRYSTAL GROWTH
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METHOD FOR PRODUCING CRYSTAL
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- Publication date Jan 18, 2018
- KYOCERA CORPORATION
- Chiaki DOMOTO
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR PRODUCING CRYSTAL
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- Publication date Nov 30, 2017
- Kyocera Corporation
- Chiaki Domoto
- C30 - CRYSTAL GROWTH
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METHOD OF LIQUID-PHASE EPITAXIAL GROWTH OF LEAD ZIRCONATE TITANATE...
- Publication number 20170314156
- Publication date Nov 2, 2017
- Quest Integrated, LLC
- Vincent Fratello
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APPARATUS FOR PRODUCING SiC SINGLE CRYSTAL BY SOLUTION GROWTH PROCE...
- Publication number 20170306522
- Publication date Oct 26, 2017
- NIPPON STEEL & SUMITOMO METAL CORPORATION
- Kazuhito KAMEI
- C30 - CRYSTAL GROWTH
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METHOD FOR PRODUCING SiC SINGLE CRYSTAL AND APPARATUS FOR PRODUCING...
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- NIPPON STEEL & SUMITOMO METAL CORPORATION
- Kazuhiko KUSUNOKI
- C30 - CRYSTAL GROWTH
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METHOD FOR PRODUCING P-TYPE SiC SINGLE CRYSTAL
- Publication number 20170283982
- Publication date Oct 5, 2017
- NIPPON STEEL & SUMITOMO METAL CORPORATION
- Kazuhiko KUSUNOKI
- C30 - CRYSTAL GROWTH
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SIC SINGLE CRYSTAL PRODUCTION METHOD AND PRODUCTION APPARATUS
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- Toyota Jidosha Kabushiki Kaisha
- Motohisa KADO
- C30 - CRYSTAL GROWTH
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SIC SINGLE CRYSTAL AND METHOD FOR PRODUCING SAME
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- Publication date Jun 15, 2017
- Toyota Jidosha Kabushiki Kaisha
- Katsunori DANNO
- C30 - CRYSTAL GROWTH
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SINGLE METAL CRYSTALS
- Publication number 20170121843
- Publication date May 4, 2017
- The Board of Trustees of the Leland Stanford Junior University
- James D. Plummer
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR REMOVING WORK-AFFECTED LAYER ON SiC SEED CRYSTAL, SiC SE...
- Publication number 20170114475
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- TOYO TANSO CO., LTD
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METHOD FOR PRODUCING A GROUP III NITRIDE SEMICONDUCTOR SINGLE CRYST...
- Publication number 20170081780
- Publication date Mar 23, 2017
- Toyoda Gosei Co., Ltd.
- Seiji NAGAI
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD OF MANUFACTURING SiC SINGLE CRYSTAL
- Publication number 20170067183
- Publication date Mar 9, 2017
- NIPPON STEEL & SUMITOMO METAL CORPORATION
- Kazuaki SEKI
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD AND APPARATUS FOR PRODUCING CRYSTALLINE CLADDING AND CRYSTAL...
- Publication number 20170031091
- Publication date Feb 2, 2017
- The Penn State Research Foundation
- Shizhuo YIN
- C30 - CRYSTAL GROWTH
Information Patent Application
PRODUCTION METHOD OF SiC SINGLE CRYSTAL
- Publication number 20170009373
- Publication date Jan 12, 2017
- NIPPON STEEL & SUMITOMO METAL CORPORATION
- Kazuhiko KUSUNOKI
- C30 - CRYSTAL GROWTH
Information Patent Application
SIC SINGLE CRYSTAL AND METHOD FOR PRODUCING SAME
- Publication number 20170009374
- Publication date Jan 12, 2017
- Toyota Jidosha Kabushiki Kaisha
- Takayuki SHIRAI
- C30 - CRYSTAL GROWTH

the solvent being a component of the crystal composition

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

SiC crucible, SiC sintered body, and method of producing SiC single...

Silicon-based molten composition and method for manufacturing silic...

Semiconductor substrate, gallium nitride single crystal, and method...

SiC single crystal production method and production apparatus

Silicon-based molten composition and manufacturing method of SiC si...

Silicon-based molten composition and manufacturing method of SiC si...

SiC single crystal production method and production apparatus

Lead oxychloride, infrared nonlinear optical crystal, and preparati...

Method for preparing SiC single crystal

Method for manufacturing semiconductor wafer

Method of producing crystal

SiC single crystal and production method thereof

SiC single crystal and method for producing same

Method and apparatus for producing crystalline cladding and crystal...

Method for producing silicon carbide single crystal in a solution p...

N-type SiC single crystal and method for its production

Method for manufacturing a silicon carbide wafer using a susceptor...

Method for producing crystal

Method for producing SiC single crystal

SiC single crystal and method for producing same

Method for producing sic single crystal having low defects by solut...

SiC single crystal production method and production apparatus

Li4Sr(BO3)2 compound, Li4Sr(BO3)2 nonlinear optical crystal, prepar...

Method and apparatus for producing crystalline cladding and crystal...

Method for producing SiC single crystal

Method for growing silicon carbide crystal

Method for producing SiC substrate

Method for preparing single-crystal cubic sesquioxides and uses

Method for growing silicon carbide crystal

Production method of SiC single crystal

Patents Applicationslast 30 patents

BISMUTH-SUBSTITUTED RARE EARTH IRON GARNET SINGLE CRYSTAL FILM PROD...

GROUP 13 ELEMENT NITRIDE CRYSTAL LAYER GROWTH METHOD, NITRIDE SEMIC...

GROUP-III ELEMENT NITRIDE SEMICONDUCTOR SUBSTRATE

BISMUTH-SUBSTITUTED RARE EARTH IRON GARNET SINGLE CRYSTAL, FARADAY...

SEMICONDUCTOR DEVICE

Composite Wavelength Converter

METHOD FOR PRODUCING GROUP III NITRIDE SEMICONDUCTOR

METHOD FOR PRODUCING GALLIUM NITRIDE STACKED BODY

Silicon-Based Molten Composition And Method For Manufacturing Silic...

METHOD FOR MANUFACTURING SINGLE-CRYSTAL SiC, AND HOUSING CONTAINER

METHOD FOR MANUFACTURING SEMICONDUCTOR WAFER

METHOD OF PRODUCING SiC SINGLE CRYSTAL

METHOD AND APPARATUS FOR PRODUCING CRYSTALLINE CLADDING AND CRYSTAL...

METHOD FOR PRODUCING GROUP 13 NITRIDE SINGLE CRYSTAL AND APPARATUS...

METHOD FOR PRODUCING SIC SINGLE CRYSTAL

METHOD FOR PRODUCING CRYSTAL

METHOD FOR PRODUCING CRYSTAL

METHOD OF LIQUID-PHASE EPITAXIAL GROWTH OF LEAD ZIRCONATE TITANATE...

APPARATUS FOR PRODUCING SiC SINGLE CRYSTAL BY SOLUTION GROWTH PROCE...

METHOD FOR PRODUCING SiC SINGLE CRYSTAL AND APPARATUS FOR PRODUCING...

METHOD FOR PRODUCING P-TYPE SiC SINGLE CRYSTAL

SIC SINGLE CRYSTAL PRODUCTION METHOD AND PRODUCTION APPARATUS

SIC SINGLE CRYSTAL AND METHOD FOR PRODUCING SAME

SINGLE METAL CRYSTALS

METHOD FOR REMOVING WORK-AFFECTED LAYER ON SiC SEED CRYSTAL, SiC SE...

METHOD FOR PRODUCING A GROUP III NITRIDE SEMICONDUCTOR SINGLE CRYST...

METHOD OF MANUFACTURING SiC SINGLE CRYSTAL

METHOD AND APPARATUS FOR PRODUCING CRYSTALLINE CLADDING AND CRYSTAL...

PRODUCTION METHOD OF SiC SINGLE CRYSTAL

SIC SINGLE CRYSTAL AND METHOD FOR PRODUCING SAME