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Electric elements
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MAGNETS INDUCTANCES TRANSFORMERS SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
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Force sensor
Patent number
11,971,315
Issue date
Apr 30, 2024
Daegu Gyeongbuk Institute of Science & Technology
June Seo Kim
H01 - BASIC ELECTRIC ELEMENTS
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Semiconductor device and method for fabricating the same
Patent number
11,968,906
Issue date
Apr 23, 2024
United Microelectronics Corp.
Jin-Yan Chiou
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Method of manufacturing a magnetoresistive random access memory (MRAM)
Patent number
11,968,909
Issue date
Apr 23, 2024
Godo Kaisha IP Bridge 1
Shinji Yuasa
B82 - NANO-TECHNOLOGY
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Spin-orbit torque device, method for fabricating a spin-orbit torqu...
Patent number
11,968,842
Issue date
Apr 23, 2024
National University of Singapore
Jingsheng Chen
H01 - BASIC ELECTRIC ELEMENTS
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Magnetoresistive element having a nano-current-channel structure
Patent number
11,957,063
Issue date
Apr 9, 2024
Yimin Guo
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Magnetic tunnel junction (MTJ) device and forming method thereof
Patent number
11,950,431
Issue date
Apr 2, 2024
United Microelectronics Corp.
Wei Chen
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Semiconductor device and method for fabricating the same
Patent number
11,950,513
Issue date
Apr 2, 2024
United Microelectronics Corp.
Hui-Lin Wang
H01 - BASIC ELECTRIC ELEMENTS
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Magnetic device
Patent number
11,935,677
Issue date
Mar 19, 2024
Samsung Electronics Co., Ltd.
Younghyun Kim
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Magnetic heterojunction structure and method for controlling and ac...
Patent number
11,922,986
Issue date
Mar 5, 2024
SHAN DONG UNIVERSITY
Shishen Yan
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Insertion layers for perpendicularly magnetized Heusler layers with...
Patent number
11,925,124
Issue date
Mar 5, 2024
Samsung Electronics Co., Ltd.
Jaewoo Jeong
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Magnetic sensor
Patent number
11,914,008
Issue date
Feb 27, 2024
TDK Corporation
Keisuke Uchida
H01 - BASIC ELECTRIC ELEMENTS
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Memory device and manufacturing method thereof
Patent number
11,910,621
Issue date
Feb 20, 2024
Taiwan Semiconductor Manufacturing Co., Ltd
Jau-Yi Wu
H01 - BASIC ELECTRIC ELEMENTS
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BiSbX (012) layers having increased operating temperatures for SOT...
Patent number
11,908,496
Issue date
Feb 20, 2024
Western Digital Technologies, Inc.
Quang Le
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Spin element and magnetic memory
Patent number
11,903,327
Issue date
Feb 13, 2024
TDK Corporation
Tomoyuki Sasaki
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Layout pattern for magnetoresistive random access memory
Patent number
11,895,848
Issue date
Feb 6, 2024
United Microelectronics Corp.
Ya-Huei Tsai
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Domain wall moving element, domain wall moving type magnetic record...
Patent number
11,894,172
Issue date
Feb 6, 2024
TDK Corporation
Tetsuhito Shinohara
H01 - BASIC ELECTRIC ELEMENTS
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Voltage-controlled magnetic anisotropy memory device including an a...
Patent number
11,887,640
Issue date
Jan 30, 2024
Western Digital Technologies, Inc.
Derek Stewart
H01 - BASIC ELECTRIC ELEMENTS
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Memory cell with top electrode via
Patent number
11,889,769
Issue date
Jan 30, 2024
Taiwan Semiconductor Manufacturing Company, Ltd
Ming-Che Ku
H01 - BASIC ELECTRIC ELEMENTS
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Method, system and device for integration of volatile and non-volat...
Patent number
11,881,263
Issue date
Jan 23, 2024
ARM Limited
Akhilesh Ramlaut Jaiswal
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Vertical spin orbit torque devices
Patent number
RE49797
Issue date
Jan 9, 2024
Samsung Electronics Co., Ltd.
Vladimir Nikitin
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MRAM fabrication and device
Patent number
11,864,467
Issue date
Jan 2, 2024
Taiwan Semiconductor Manufacturing Company, Ltd
Jung-Tang Wu
H01 - BASIC ELECTRIC ELEMENTS
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Magnetic random access memory and manufacturing method thereof
Patent number
11,864,466
Issue date
Jan 2, 2024
Taiwan Semiconductor Manufacturing Company, Ltd
Shy-Jay Lin
H01 - BASIC ELECTRIC ELEMENTS
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MRAM stacks and memory devices
Patent number
11,862,373
Issue date
Jan 2, 2024
Taiwan Semiconductor Manufacturing Company, Ltd
Shy-Jay Lin
H01 - BASIC ELECTRIC ELEMENTS
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Magnetoresistive random access memory
Patent number
11,864,468
Issue date
Jan 2, 2024
United Microelectronics Corp.
Hui-Lin Wang
H01 - BASIC ELECTRIC ELEMENTS
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Patent Grant
Sub 60nm etchless MRAM devices by ion beam etching fabricated T-sha...
Patent number
11,856,864
Issue date
Dec 26, 2023
Taiwan Semiconductor Manufacturing Company, Ltd
Yi Yang
H01 - BASIC ELECTRIC ELEMENTS
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Magnetoresistive random access memory and method for fabricating th...
Patent number
11,849,592
Issue date
Dec 19, 2023
United Microelectronics Corp.
Jia-Rong Wu
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Magnetic tunneling junction with synthetic free layer for SOT-MRAM
Patent number
11,844,287
Issue date
Dec 12, 2023
Taiwan Semiconductor Manufacturing Co., Ltd
Chien-Min Lee
H01 - BASIC ELECTRIC ELEMENTS
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Crystal seed layer for magnetic random access memory (MRAM)
Patent number
11,842,757
Issue date
Dec 12, 2023
Taiwan Semiconductor Manufacturing Company, Ltd
Tsann Lin
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Patent Grant
Magnetoresistive memory device including a plurality of reference l...
Patent number
11,839,162
Issue date
Dec 5, 2023
Western Digital Technologies, Inc.
Alan Kalitsov
H01 - BASIC ELECTRIC ELEMENTS
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Memory device and semiconductor die, and method of fabricating memo...
Patent number
11,825,664
Issue date
Nov 21, 2023
Taiwan Semiconductor Manufacturing Company, Ltd
Ji-Feng Ying
H01 - BASIC ELECTRIC ELEMENTS
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last 30 patents
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Patent Application
MAGNETIZATION ROTATIONAL ELEMENT AND MAGNETORESISTIVE EFFECT ELEMENT
Publication number
20240130247
Publication date
Apr 18, 2024
TDK Corporation
Tomoyuki SASAKI
G01 - MEASURING TESTING
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Patent Application
SPIN LOGIC DEVICE BASED ON MAGNETIC TUNNEL JUNCTION AND ELECTRONIC...
Publication number
20240120923
Publication date
Apr 11, 2024
Institute of Physics, Chinese Academy of Sciences
Xiufeng HAN
G06 - COMPUTING CALCULATING COUNTING
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Patent Application
Magnetoresistive Devices Comprising A Synthetic Antiferromagnetic C...
Publication number
20240107893
Publication date
Mar 28, 2024
Western Digital Technologies, Inc.
Susumu OKAMURA
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Patent Application
VARIABLE RESISTANCE ELEMENT AND SEMICONDUCTOR DEVICE INCLUDING THE...
Publication number
20240099157
Publication date
Mar 21, 2024
SK HYNIX INC.
Jung Hyeok KWAK
H01 - BASIC ELECTRIC ELEMENTS
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Patent Application
SUB 60NM ETCHLESS MRAM DEVICES BY ION BEAM ETCHING FABRICATED T-SHA...
Publication number
20240099151
Publication date
Mar 21, 2024
Taiwan Semiconductor Manufacturing Company, Ltd.
Yi Yang
H01 - BASIC ELECTRIC ELEMENTS
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MAGNETORESISTIVE RANDOM ACCESS MEMORY
Publication number
20240099154
Publication date
Mar 21, 2024
UNITED MICROELECTRONICS CORP.
Hui-Lin Wang
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Patent Application
MRAM STACKS, MRAM DEVICES AND METHODS OF FORMING THE SAME
Publication number
20240087786
Publication date
Mar 14, 2024
Taiwan Semiconductor Manufacturing Company, Ltd.
Shy-Jay Lin
H01 - BASIC ELECTRIC ELEMENTS
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Patent Application
MEMORY CELL WITH TOP ELECTRODE VIA
Publication number
20240090340
Publication date
Mar 14, 2024
Taiwan Semiconductor Manufacturing Company, Ltd.
Ming-Che Ku
H01 - BASIC ELECTRIC ELEMENTS
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Patent Application
MAGNETIC TUNNEL JUNCTION STRUCTURE WITH NON-MAGNETIC AMORPHOUS INSE...
Publication number
20240081155
Publication date
Mar 7, 2024
HeFeChip Corporation Limited
Young-suk Choi
H01 - BASIC ELECTRIC ELEMENTS
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Patent Application
MAGNETORESISTIVE RANDOM ACCESS MEMORY AND METHOD FOR FABRICATING TH...
Publication number
20240074209
Publication date
Feb 29, 2024
UNITED MICROELECTRONICS CORP.
Jia-Rong Wu
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Patent Application
CRYSTAL SEED LAYER FOR MAGNETIC RANDOM ACCESS MEMORY (MRAM)
Publication number
20240062794
Publication date
Feb 22, 2024
Taiwan Semiconductor Manufacturing Company, Ltd.
Tsann Lin
H01 - BASIC ELECTRIC ELEMENTS
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MAGNETORESISTANCE EFFECT ELEMENT AND HEUSLER ALLOY
Publication number
20240062777
Publication date
Feb 22, 2024
TDK Corporation
Kazuumi INUBUSHI
H01 - BASIC ELECTRIC ELEMENTS
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Patent Application
MEMORY DEVICE AND SEMICONDUCTOR DIE, AND METHOD OF FABRICATING MEMO...
Publication number
20240040801
Publication date
Feb 1, 2024
Taiwan Semiconductor Manufacturing Company, Ltd.
Ji-Feng YING
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Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
Publication number
20240032440
Publication date
Jan 25, 2024
UNITED MICROELECTRONICS CORP.
Hui-Lin Wang
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STORAGE ELEMENT AND STORAGE APPARATUS
Publication number
20240005975
Publication date
Jan 4, 2024
SONY GROUP CORPORATION
Yutaka Higo
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Patent Application
MAGNETIC TUNNEL JUNCTION STRUCTURES AND RELATED METHODS
Publication number
20230413683
Publication date
Dec 21, 2023
Taiwan Semiconductor Manufacturing Co., Ltd.
Mingyuan SONG
H01 - BASIC ELECTRIC ELEMENTS
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Patent Application
METHOD OF MANUFACTURING A MAGNETORESISTIVE RANDOM ACCESS MEMORY (MRAM)
Publication number
20230413685
Publication date
Dec 21, 2023
Godo Kaisha IP Bridge 1
Shinji YUASA
B82 - NANO-TECHNOLOGY
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Patent Application
SPIN LOGIC DEVICE BASED ON SPIN-CHARGE CONVERSION AND SPIN LOGIC AR...
Publication number
20230403865
Publication date
Dec 14, 2023
Industry-Academic Cooperation Foundation, Yonsei University
Jongill HONG
H01 - BASIC ELECTRIC ELEMENTS
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Patent Application
MAGNETO-RESISTIVE RANDOM-ACCESS MEMORY (MRAM) DEVICES AND METHODS O...
Publication number
20230403948
Publication date
Dec 14, 2023
Taiwan Semiconductor Manufacturing Company, Ltd.
Hsuan-Yi PENG
H01 - BASIC ELECTRIC ELEMENTS
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FERROMAGNETIC FREE LAYER, LAMINATED STRUCURE COMPRISING THE SAME, M...
Publication number
20230397503
Publication date
Dec 7, 2023
SOLAR APPLIED MATERIALS TECHNOLOGY CORP.
CHIH-WEN TANG
C22 - METALLURGY FERROUS OR NON-FERROUS ALLOYS TREATMENT OF ALLOYS OR NON-FER...
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SELF-ALIGNED ENCAPSULATION HARD MASK TO SEPARATE PHYSICALLY UNDER-E...
Publication number
20230389435
Publication date
Nov 30, 2023
Taiwan Semiconductor Manufacturing Company, Ltd.
Yi Yang
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Patent Application
MRAM Fabrication and Device
Publication number
20230389438
Publication date
Nov 30, 2023
Taiwan Semiconductor Manufacturing Co., Ltd.
Jung-Tang Wu
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Patent Application
Buffer Layers And Interlayers That Promote BiSbx (012) Alloy Orient...
Publication number
20230386721
Publication date
Nov 30, 2023
Western Digital Technologies, Inc.
Quang LE
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MAGNETIC TUNNELING JUNCTION WITH SYNTHETIC FREE LAYER FOR SOT-MRAM
Publication number
20230389448
Publication date
Nov 30, 2023
Taiwan Semiconductor Manufacturing Co., Ltd.
Chien-Min Lee
H01 - BASIC ELECTRIC ELEMENTS
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ASYNCHRONOUS READ CIRCUIT USING DELAY SENSING IN MAGNETORESISTIVE R...
Publication number
20230368829
Publication date
Nov 16, 2023
Taiwan Semiconductor Manufacturing Company, Ltd.
Jack Liu
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METHOD OF MANUFACTURING A MAGNETORESISTIVE RANDOM ACCESS MEMORY (MRAM)
Publication number
20230363288
Publication date
Nov 9, 2023
GODO KAISHA IP BRIDGE 1
Shinji YUASA
B82 - NANO-TECHNOLOGY
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Patent Application
MAGNETO-RESISTIVE RANDOM-ACCESS MEMORY (MRAM) DEVICES WITH SELF-ALI...
Publication number
20230337545
Publication date
Oct 19, 2023
Taiwan Semiconductor Manufacturing Company, Ltd.
Wei-Hao LIAO
H01 - BASIC ELECTRIC ELEMENTS
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Patent Application
SPIN TORQUE OSCILLATOR (STO) SENSORS USED IN NUCLEIC ACID SEQUENCIN...
Publication number
20230294085
Publication date
Sep 21, 2023
Western Digital Technologies, Inc.
Patrick BRAGANCA
B01 - PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
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STRUCTURE AND METHOD FOR MRAM DEVICES HAVING SPACER ELEMENT
Publication number
20230301197
Publication date
Sep 21, 2023
Taiwan Semiconductor Manufacturing Company, Ltd.
Hsiang-Ku SHEN
H01 - BASIC ELECTRIC ELEMENTS
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Patent Application
MAGNETIC DEVICE AND MAGNETIC RANDOM ACCESS MEMORY
Publication number
20230263073
Publication date
Aug 17, 2023
Taiwan Semiconductor Manufacturing Company, Ltd.
Ji-Feng YING
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