the spacer being semiconducting or insulating

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CPC
H01F10/3254

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HELECTRICITY H01Electric elements H01FMAGNETS INDUCTANCES TRANSFORMERS SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES H01F10/00Thin magnetic films

Current Industry

H01F10/3254the spacer being semiconducting or insulating

Industries

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Patents Grantslast 30 patents

Information Patent Grant
Iridium-manganese-based tunnel magnetoresistance sensing element wi...
- Patent number 12,210,075
- Issue date Jan 28, 2025
- Infineon Technologies AG
- Bernhard Endres
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure and method for MRAM devices having spacer element
- Patent number 12,201,031
- Issue date Jan 14, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Hsiang-Ku Shen
- G11 - INFORMATION STORAGE
Information Patent Grant
Storage element and storage apparatus
- Patent number 12,170,104
- Issue date Dec 17, 2024
- Sony Group Corporation
- Yutaka Higo
- G11 - INFORMATION STORAGE
Information Patent Grant
Warped magnetic tunnel junctions and bit-patterned media
- Patent number 12,170,162
- Issue date Dec 17, 2024
- Jannier Maximo Roiz-Wilson
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory device and manufacturing method thereof
- Patent number 12,156,479
- Issue date Nov 26, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Yen-Lin Huang
- C22 - METALLURGY FERROUS OR NON-FERROUS ALLOYS TREATMENT OF ALLOYS OR NON-FER...
Information Patent Grant
Layout pattern for magnetoresistive random access memory
- Patent number 12,150,315
- Issue date Nov 19, 2024
- United Microelectronics Corp.
- Ya-Huei Tsai
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetoresistive random access memory having a blocking layer on me...
- Patent number 12,150,313
- Issue date Nov 19, 2024
- United Microelectronics Corp.
- Jia-Rong Wu
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetoresistive random access memory and method for fabricating th...
- Patent number 12,127,413
- Issue date Oct 22, 2024
- United Microelectronics Corp.
- Kun-Ju Li
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic tunneling junction element with a composite capping layer...
- Patent number 12,108,684
- Issue date Oct 1, 2024
- HeFeChip Corporation Limited
- Qinli Ma
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor device and method for fabricating the same
- Patent number 12,102,014
- Issue date Sep 24, 2024
- United Microelectronics Corp.
- Hui-Lin Wang
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetoresistive effect element
- Patent number 12,096,699
- Issue date Sep 17, 2024
- TDK Corporation
- Tomoyuki Sasaki
- G11 - INFORMATION STORAGE
Information Patent Grant
Spin torque device having a spin current polarized at a canting ang...
- Patent number 12,075,708
- Issue date Aug 27, 2024
- National University of Singapore
- Kaiming Cai
- G11 - INFORMATION STORAGE
Information Patent Grant
Method for manufacturing a magnetic random-access memory device usi...
- Patent number 12,069,957
- Issue date Aug 20, 2024
- Integrated Silicon Solution, (Cayman) Inc.
- Jorge Vasquez
- G11 - INFORMATION STORAGE
Information Patent Grant
Method for forming MTJS with lithography-variation independent crit...
- Patent number 12,058,940
- Issue date Aug 6, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- William J. Gallagher
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetoresistive devices and methods therefor
- Patent number 12,052,928
- Issue date Jul 30, 2024
- EVERSPIN TECHNOLOGIES, INC.
- Jijun Sun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetoresistance effect element
- Patent number 12,048,251
- Issue date Jul 23, 2024
- TDK Corporation
- Tomoyuki Sasaki
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic device and magnetic random access memory
- Patent number 12,035,636
- Issue date Jul 9, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Ji-Feng Ying
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic memory device including magnetoresistance effect element
- Patent number 12,029,136
- Issue date Jul 2, 2024
- Kioxia Corporation
- Shogo Itai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetoresistive stack/structure with one or more transition metals...
- Patent number 12,029,137
- Issue date Jul 2, 2024
- EVERSPIN TECHNOLOGIES, INC.
- Sumio Ikegawa
- G11 - INFORMATION STORAGE
Information Patent Grant
Methods for manufacturing magnetoresistive stack devices
- Patent number 12,022,738
- Issue date Jun 25, 2024
- EVERSPIN TECHNOLOGIES, INC.
- Sanjeev Aggarwal
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Spin-orbit torque and spin-transfer torque magnetoresistive random-...
- Patent number 12,016,251
- Issue date Jun 18, 2024
- International Business Machines Corporation
- Heng Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetic memory device and method for manufacturing the same
- Patent number 12,010,925
- Issue date Jun 11, 2024
- Samsung Electronics Co., Ltd.
- Ung Hwan Pi
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic tunnel junction element and magnetoresistive memory device
- Patent number 12,004,355
- Issue date Jun 4, 2024
- Samsung Electronics Co., Ltd.
- Yoshiaki Sonobe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Post-treatment processes for ion beam etching of magnetic tunnel ju...
- Patent number 11,991,932
- Issue date May 21, 2024
- Taiwan Semiconductor Manufacturing Company Limited
- Hung-Yu Chang
- G11 - INFORMATION STORAGE
Information Patent Grant
Highly physical ion resistive spacer to define chemical damage free...
- Patent number 11,985,905
- Issue date May 14, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yi Yang
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic memory device including magnetoresistance effect element
- Patent number 11,985,907
- Issue date May 14, 2024
- Kioxia Corporation
- Shogo Itai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Force sensor
- Patent number 11,971,315
- Issue date Apr 30, 2024
- Daegu Gyeongbuk Institute of Science & Technology
- June Seo Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for fabricating the same
- Patent number 11,968,906
- Issue date Apr 23, 2024
- United Microelectronics Corp.
- Jin-Yan Chiou
- G11 - INFORMATION STORAGE
Information Patent Grant
Method of manufacturing a magnetoresistive random access memory (MRAM)
- Patent number 11,968,909
- Issue date Apr 23, 2024
- Godo Kaisha IP Bridge 1
- Shinji Yuasa
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Spin-orbit torque device, method for fabricating a spin-orbit torqu...
- Patent number 11,968,842
- Issue date Apr 23, 2024
- National University of Singapore
- Jingsheng Chen
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
MAGNETORESISTIVE RANDOM ACCESS MEMORY AND METHOD FOR FABRICATING TH...
- Publication number 20250048648
- Publication date Feb 6, 2025
- UNITED MICROELECTRONICS CORP.
- Jia-Rong Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SPINTRONICS DEVICE, MAGNETIC MEMORY, ELECTRONIC APPARATUS, AND MANU...
- Publication number 20250040445
- Publication date Jan 30, 2025
- Keio University
- Yukio NOZAKI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LAYOUT PATTERN FOR MAGNETORESISTIVE RANDOM ACCESS MEMORY
- Publication number 20250040149
- Publication date Jan 30, 2025
- UNITED MICROELECTRONICS CORP.
- Ya-Huei Tsai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETIC TUNNELING JUNCTION WITH SYNTHETIC FREE LAYER FOR SOT-MRAM
- Publication number 20250040447
- Publication date Jan 30, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chien-Min Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FREE LAYER IN MAGNETORESISTIVE RANDOM-ACCESS MEMORY
- Publication number 20250040444
- Publication date Jan 30, 2025
- International Business Machines Corporation
- MATTHIAS GEORG GOTTWALD
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETIC MEMORY DEVICE
- Publication number 20250029644
- Publication date Jan 23, 2025
- Max-Planck-Gesellschaft zur Forderung der Wissenschaften e.V.
- Unghwan Pi
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
- Publication number 20250008743
- Publication date Jan 2, 2025
- UNITED MICROELECTRONICS CORP.
- Kun-Ju Li
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR DEVICE INCLUDING MAGNETIC TUNNEL JUNCTION STRUCTURE
- Publication number 20250008843
- Publication date Jan 2, 2025
- SK HYNIX INC.
- Soo Man SEO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
- Publication number 20240431214
- Publication date Dec 26, 2024
- UNITED MICROELECTRONICS CORP.
- Hui-Lin Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETORESISTANCE ELEMENT INCLUDING A SKYRMION LAYER AND A VORTEX L...
- Publication number 20240420878
- Publication date Dec 19, 2024
- ALLEGRO MICROSYSTEMS, LLC
- Samridh JAISWAL
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
- Publication number 20240415026
- Publication date Dec 12, 2024
- UNITED MICROELECTRONICS CORP.
- Hui-Lin Wang
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETORESISTIVE ELEMENT AND MAGNETIC SWITCH COMPRISING THE MAGNETO...
- Publication number 20240395448
- Publication date Nov 28, 2024
- ALLEGRO MICROSYSTEMS, LLC
- Nikita Strelkov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20240389472
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Yen-Lin Huang
- C22 - METALLURGY FERROUS OR NON-FERROUS ALLOYS TREATMENT OF ALLOYS OR NON-FER...
Information Patent Application
DIGITAL DEVICE, METHOD FOR PRODUCING SAME, AND METHOD FOR USING SAME
- Publication number 20240371559
- Publication date Nov 7, 2024
- TOHOKU UNIVERSITY
- Yutaro TAKEUCHI
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
SPIN CURRENT MAGNETIZATION ROTATIONAL ELEMENT, SPIN CURRENT MAGNETI...
- Publication number 20240365684
- Publication date Oct 31, 2024
- TDK Corporation
- Tomoyuki SASAKI
- G11 - INFORMATION STORAGE
Information Patent Application
MTJS WITH LITHOGRAPHY-VARIATION INDEPENDENT CRITICAL DIMENSION
- Publication number 20240357941
- Publication date Oct 24, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- William J. Gallagher
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SPIN INDUCTOR
- Publication number 20240347252
- Publication date Oct 17, 2024
- TDK Corporation
- Tomoyuki SASAKI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NITRIDE SEED LAYER WITH HIGH THERMAL STABILITY FOR GROWTH OF PERPEN...
- Publication number 20240349619
- Publication date Oct 17, 2024
- Samsung Electronics Co., Ltd.
- Jaewoo Jeong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETORESISTIVE ELEMENT HAVING COMPENSATED TEMPERATURE COEFFICIENT...
- Publication number 20240345182
- Publication date Oct 17, 2024
- ALLEGRO MICROSYSTEMS, LLC
- Andrey Timopheev
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETORESISTIVE STACK/STRUCTURE AND METHODS THEREFOR
- Publication number 20240315145
- Publication date Sep 19, 2024
- EVERSPIN TECHNOLOGIES, INC.
- Sumio IKEGAWA
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETIC DEVICE AND MAGNETIC RANDOM ACCESS MEMORY
- Publication number 20240315147
- Publication date Sep 19, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ji-Feng YING
- G11 - INFORMATION STORAGE
Information Patent Application
METHODS FOR MANUFACTURING MAGNETORESISTIVE STACK DEVICES
- Publication number 20240306513
- Publication date Sep 12, 2024
- EVERSPIN TECHNOLOGIES, INC.
- Sanjeev AGGARWAL
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
IRIDIUM-MANGANESE-BASED TUNNEL MAGNETORESISTANCE SENSING ELEMENT WI...
- Publication number 20240302459
- Publication date Sep 12, 2024
- INFINEON TECHNOLOGIES AG
- Bernhard ENDRES
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGHLY PHYSICAL ION RESISTIVE SPACER TO DEFINE CHEMICAL DAMAGE FREE...
- Publication number 20240298546
- Publication date Sep 5, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yi Yang
- G11 - INFORMATION STORAGE
Information Patent Application
METHOD OF MANUFACTURING A MAGNETORESISTIVE RANDOM ACCESS MEMORY (MRAM)
- Publication number 20240284804
- Publication date Aug 22, 2024
- GODO KAISHA IP BRIDGE 1
- Shinji YUASA
- B82 - NANO-TECHNOLOGY
Information Patent Application
TUNNEL JUNCTION LAMINATED FILM, MAGNETIC MEMORY ELEMENT, AND MAGNET...
- Publication number 20240284803
- Publication date Aug 22, 2024
- Tohoku University
- Tetsuo Endoh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETIC TUNNEL JUNCTION (MTJ) HAVING A DIFFUSION BLOCKING SPACER L...
- Publication number 20240268236
- Publication date Aug 8, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Kuo-Feng Huang
- G11 - INFORMATION STORAGE
Information Patent Application
IMPLEMENTING COMPUTING FUNCTIONS USING SKYRMIONS
- Publication number 20240258006
- Publication date Aug 1, 2024
- Brown University
- Gang Xiao
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
- Publication number 20240237550
- Publication date Jul 11, 2024
- UNITED MICROELECTRONICS CORP.
- Jin-Yan Chiou
- G11 - INFORMATION STORAGE
Information Patent Application
Tunneling Magnetoresistance Device With Magnetically Soft High Mome...
- Publication number 20240233999
- Publication date Jul 11, 2024
- HEADWAY TECHNOLOGIES, INC.
- Hui-Chuan Wang
- G11 - INFORMATION STORAGE

the spacer being semiconducting or insulating

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Iridium-manganese-based tunnel magnetoresistance sensing element wi...

Structure and method for MRAM devices having spacer element

Storage element and storage apparatus

Warped magnetic tunnel junctions and bit-patterned media

Memory device and manufacturing method thereof

Layout pattern for magnetoresistive random access memory

Magnetoresistive random access memory having a blocking layer on me...

Magnetoresistive random access memory and method for fabricating th...

Magnetic tunneling junction element with a composite capping layer...

Semiconductor device and method for fabricating the same

Magnetoresistive effect element

Spin torque device having a spin current polarized at a canting ang...

Method for manufacturing a magnetic random-access memory device usi...

Method for forming MTJS with lithography-variation independent crit...

Magnetoresistive devices and methods therefor

Magnetoresistance effect element

Magnetic device and magnetic random access memory

Magnetic memory device including magnetoresistance effect element

Magnetoresistive stack/structure with one or more transition metals...

Methods for manufacturing magnetoresistive stack devices

Spin-orbit torque and spin-transfer torque magnetoresistive random-...

Magnetic memory device and method for manufacturing the same

Magnetic tunnel junction element and magnetoresistive memory device

Post-treatment processes for ion beam etching of magnetic tunnel ju...

Highly physical ion resistive spacer to define chemical damage free...

Magnetic memory device including magnetoresistance effect element

Force sensor

Semiconductor device and method for fabricating the same

Method of manufacturing a magnetoresistive random access memory (MRAM)

Spin-orbit torque device, method for fabricating a spin-orbit torqu...

Patents Applicationslast 30 patents

MAGNETORESISTIVE RANDOM ACCESS MEMORY AND METHOD FOR FABRICATING TH...

SPINTRONICS DEVICE, MAGNETIC MEMORY, ELECTRONIC APPARATUS, AND MANU...

LAYOUT PATTERN FOR MAGNETORESISTIVE RANDOM ACCESS MEMORY

MAGNETIC TUNNELING JUNCTION WITH SYNTHETIC FREE LAYER FOR SOT-MRAM

FREE LAYER IN MAGNETORESISTIVE RANDOM-ACCESS MEMORY

MAGNETIC MEMORY DEVICE

SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

SEMICONDUCTOR DEVICE INCLUDING MAGNETIC TUNNEL JUNCTION STRUCTURE

SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

MAGNETORESISTANCE ELEMENT INCLUDING A SKYRMION LAYER AND A VORTEX L...

SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

MAGNETORESISTIVE ELEMENT AND MAGNETIC SWITCH COMPRISING THE MAGNETO...

MEMORY DEVICE AND MANUFACTURING METHOD THEREOF

DIGITAL DEVICE, METHOD FOR PRODUCING SAME, AND METHOD FOR USING SAME

SPIN CURRENT MAGNETIZATION ROTATIONAL ELEMENT, SPIN CURRENT MAGNETI...

MTJS WITH LITHOGRAPHY-VARIATION INDEPENDENT CRITICAL DIMENSION

SPIN INDUCTOR

NITRIDE SEED LAYER WITH HIGH THERMAL STABILITY FOR GROWTH OF PERPEN...

MAGNETORESISTIVE ELEMENT HAVING COMPENSATED TEMPERATURE COEFFICIENT...

MAGNETORESISTIVE STACK/STRUCTURE AND METHODS THEREFOR

MAGNETIC DEVICE AND MAGNETIC RANDOM ACCESS MEMORY

METHODS FOR MANUFACTURING MAGNETORESISTIVE STACK DEVICES

IRIDIUM-MANGANESE-BASED TUNNEL MAGNETORESISTANCE SENSING ELEMENT WI...

HIGHLY PHYSICAL ION RESISTIVE SPACER TO DEFINE CHEMICAL DAMAGE FREE...

METHOD OF MANUFACTURING A MAGNETORESISTIVE RANDOM ACCESS MEMORY (MRAM)

TUNNEL JUNCTION LAMINATED FILM, MAGNETIC MEMORY ELEMENT, AND MAGNET...

MAGNETIC TUNNEL JUNCTION (MTJ) HAVING A DIFFUSION BLOCKING SPACER L...

IMPLEMENTING COMPUTING FUNCTIONS USING SKYRMIONS

SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

Tunneling Magnetoresistance Device With Magnetically Soft High Mome...