the thermal history of growing the ingot

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CPC
C30B15/206

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CCHEMISTRY METALLURGY C30Crystal growth C30BSINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL REFINING BY ZONE-MELTING OF MATERIAL PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH D... C30B15/00Single-crystal growth by pulling from a melt

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C30B15/206the thermal history of growing the ingot

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Patents Grantslast 30 patents

Information Patent Grant
Asymmetric thermal fields for excluding impurities in single crysta...
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- Issue date Sep 17, 2024
- Siemens Medical Solutions USA, Inc.
- Mark Andreaco
- C30 - CRYSTAL GROWTH
Information Patent Grant
Radio frequency silicon on insulator structure with superior perfor...
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- GlobalWafers Co., Ltd.
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Information Patent Grant
Indium phosphide substrate, semiconductor epitaxial wafer, method f...
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- Issue date Mar 12, 2024
- JX Metals Corporation
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Information Patent Grant
Radio frequency silicon on insulator wafer platform with superior p...
- Patent number 11,887,885
- Issue date Jan 30, 2024
- GlobalWafers Co., Ltd.
- Michael R. Seacrist
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for controlling convection pattern of silicon melt, method f...
- Patent number 11,781,242
- Issue date Oct 10, 2023
- Sumco Corporation
- Hideki Sakamoto
- C30 - CRYSTAL GROWTH
Information Patent Grant
Nitrogen doped and vacancy dominated silicon ingot and thermally tr...
- Patent number 11,753,741
- Issue date Sep 12, 2023
- GlobalWafers Co., Ltd.
- Zheng Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor wafer of monocrystalline silicon and method of produc...
- Patent number 11,621,330
- Issue date Apr 4, 2023
- Siltronic AG
- Andreas Sattler
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing ingot block, method for manufacturing semi...
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- Issue date Feb 21, 2023
- Sumco Corporation
- Yasuhiro Saito
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Information Patent Grant
Semiconductor wafer of monocrystalline silicon and method of produc...
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- Issue date Aug 16, 2022
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- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Single crystal of silicon with <100> orientation, which is doped wi...
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Information Patent Grant
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- Koichi Maegawa
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Information Patent Grant
Method for validating the thermal history of a semiconductor ingot
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- Commissariat a l'Energie Atomique et Aux Energies Alternatives
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Information Patent Grant
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- C30 - CRYSTAL GROWTH
Information Patent Grant
Temperature control device for single crystal ingot growth and temp...
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- SK SILTRON CO., LTD.
- Hyun Woo Park
- G05 - CONTROLLING REGULATING
Information Patent Grant
Nitrogen doped and vacancy dominated silicon ingot and thermally tr...
- Patent number 11,111,602
- Issue date Sep 7, 2021
- GlobalWafers Co., Ltd.
- Zheng Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Crystal pulling systems and methods for producing monocrystalline i...
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- Issue date Jul 27, 2021
- GlobalWafers Co., Ltd.
- Soubir Basak
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Information Patent Grant
Nitrogen doped and vacancy dominated silicon ingot and thermally tr...
- Patent number 10,988,859
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Information Patent Grant
Single crystal silicon plate-shaped body
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- Issue date Apr 13, 2021
- Tokuyama Corporation
- Isao Masada
- C30 - CRYSTAL GROWTH
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Method and apparatus for manufacturing silicon single crystal
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- Issue date Dec 8, 2020
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- Wataru Sugimura
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Crystal growing systems and methods including a passive heater
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- Issue date Jul 23, 2019
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Method for producing single crystal, and method for producing silic...
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Manufacturing method of silicon monocrystal
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- C30 - CRYSTAL GROWTH
Information Patent Grant
Cooling rate control apparatus and ingot growing apparatus includin...
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- SK SILTRON CO., LTD.
- Won-Ju Lee
- C30 - CRYSTAL GROWTH
Information Patent Grant
Silicon wafer and method for manufacturing the same
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- Issue date Nov 27, 2018
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- Koji Araki
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Information Patent Grant
Method for growing a silicon crystal substrate from a melt by direc...
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- Issue date Oct 23, 2018
- Varian Semiconductor Equipment Associates, Inc.
- Frederick M. Carlson
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Information Patent Grant
Method for growing silicon single crystal
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- Issue date Oct 16, 2018
- Shin-Etsu Handotai Co., Ltd.
- Ryoji Hoshi
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Information Patent Grant
Method for producing a silicon single crystal doped with red phosph...
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- Issue date Oct 16, 2018
- Sumco Corporation
- Yasuhito Narushima
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Information Patent Grant
Epitaxial silicon wafer
- Patent number 10,020,203
- Issue date Jul 10, 2018
- Sumco Corporation
- Yasuo Koike
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Information Patent Grant
Method for growing a silicon single crystal while suppressing a gen...
- Patent number 9,988,736
- Issue date Jun 5, 2018
- Shin-Etsu Handotai Co., Ltd.
- Masanori Takazawa
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for growing silicon carbide crystal
- Patent number 9,951,439
- Issue date Apr 24, 2018
- Shin-Etsu Chemical Co., Ltd.
- Naofumi Shinya
- C30 - CRYSTAL GROWTH

Patents Applicationslast 30 patents

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SYSTEMS AND METHODS FOR COOLING A CHUNK POLYCRYSTALLINE FEEDER
- Publication number 20240167193
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VACANCY-RICH SILICON FOR USE WITH A GALLIUM NITRIDE EPITAXIAL LAYER
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SEMI-INSULATING GALLIUM ARSENIDE SINGLE CRYSTAL, PREPARATION METHOD...
- Publication number 20240093402
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- SHANXI CHINA CRYSTAL TECHNOLOGIES CO., LTD.
- Youjun GAO
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INDIUM PHOSPHIDE SUBSTRATE, SEMICONDUCTOR EPITAXIAL WAFER, METHOD F...
- Publication number 20230374700
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- JX NIPPON MINING & METALS CORPORATION
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NITROGEN DOPED AND VACANCY DOMINATED SILICON INGOT AND THERMALLY TR...
- Publication number 20230323564
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- GLOBALWAFERS CO., LTD.
- Zheng Lu
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INGOT GROWING APPARATUS AND METHOD THEREOF
- Publication number 20230287593
- Publication date Sep 14, 2023
- SK SILTRON CO., LTD
- Hyun Woo PARK
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RADIO FREQUENCY SILICON ON INSULATOR STRUCTURE WITH SUPERIOR PERFOR...
- Publication number 20230215759
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Method and System for Controlling Temperature during Crystal Growth
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- Publication date Apr 13, 2023
- XUZHOU XINJING SEMICONDUCTOR TECHNOLOGY CO., LTD
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SEMICONDUCTOR WAFER OF MONOCRYSTALLINE SILICON AND METHOD OF PRODUC...
- Publication number 20220328636
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- Siltronic AG
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- ZING SEMICONDUCTOR CORPORATION
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- Publication date Nov 4, 2021
- GLOBALWAFERS CO., LTD.
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- GLOBALWAFERS CO., LTD.
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METHOD FOR VALIDATING THE THERMAL HISTORY OF A SEMICONDUCTOR INGOT
- Publication number 20210079555
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- Commissariat A L'Energie Atomique et Aux Energies Alternatives
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- Publication date Jul 11, 2019
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- Publication number 20190161888
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- Tokuyama Corporation
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- Varian Semiconductor Equipment Associates, Inc.
- Peter L. Kellerman
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- SunEdison Semiconductor Limited (UEN201334164H)
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- SunEdison Semiconductor Limited (UEN201334164H)
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- Frederick M. Carlson
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METHOD FOR PRODUCING SINGLE CRYSTAL, AND METHOD FOR PRODUCING SILIC...
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- SUMCO TECHXIV CORPORATION
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- C30 - CRYSTAL GROWTH

the thermal history of growing the ingot

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Asymmetric thermal fields for excluding impurities in single crysta...

Radio frequency silicon on insulator structure with superior perfor...

Indium phosphide substrate, semiconductor epitaxial wafer, method f...

Radio frequency silicon on insulator wafer platform with superior p...

Method for controlling convection pattern of silicon melt, method f...

Nitrogen doped and vacancy dominated silicon ingot and thermally tr...

Semiconductor wafer of monocrystalline silicon and method of produc...

Method for manufacturing ingot block, method for manufacturing semi...

Semiconductor wafer of monocrystalline silicon and method of produc...

Single crystal of silicon with <100> orientation, which is doped wi...

N-type silicon single crystal production method, n-type silicon sin...

Method for validating the thermal history of a semiconductor ingot

Crystal pulling systems and methods for producing monocrystalline i...

Temperature control device for single crystal ingot growth and temp...

Nitrogen doped and vacancy dominated silicon ingot and thermally tr...

Crystal pulling systems and methods for producing monocrystalline i...

Nitrogen doped and vacancy dominated silicon ingot and thermally tr...

Single crystal silicon plate-shaped body

Method and apparatus for manufacturing silicon single crystal

Crystal growing systems and methods including a passive heater

Method for producing single crystal, and method for producing silic...

Manufacturing method of silicon monocrystal

Cooling rate control apparatus and ingot growing apparatus includin...

Silicon wafer and method for manufacturing the same

Method for growing a silicon crystal substrate from a melt by direc...

Method for growing silicon single crystal

Method for producing a silicon single crystal doped with red phosph...

Epitaxial silicon wafer

Method for growing a silicon single crystal while suppressing a gen...

Method for growing silicon carbide crystal

Patents Applicationslast 30 patents

ASYMMETRIC THERMAL FIELDS FOR EXCLUDING IMPURITIES IN SINGLE CRYSTA...

SINGLE-CRYSTAL SILICON CARBIDE WAFER, SINGLE-CRYSTAL SILICON CARBID...

METHOD, APPARATUS, SYSTEM AND COMPUTER STORAGE MEDIUM OF CONTROLLIN...

SYSTEMS AND METHODS FOR COOLING A CHUNK POLYCRYSTALLINE FEEDER

VACANCY-RICH SILICON FOR USE WITH A GALLIUM NITRIDE EPITAXIAL LAYER

SEMI-INSULATING GALLIUM ARSENIDE SINGLE CRYSTAL, PREPARATION METHOD...

INDIUM PHOSPHIDE SUBSTRATE, SEMICONDUCTOR EPITAXIAL WAFER, METHOD F...

NITROGEN DOPED AND VACANCY DOMINATED SILICON INGOT AND THERMALLY TR...

INGOT GROWING APPARATUS AND METHOD THEREOF

RADIO FREQUENCY SILICON ON INSULATOR STRUCTURE WITH SUPERIOR PERFOR...

Method and System for Controlling Temperature during Crystal Growth

SEMICONDUCTOR WAFER OF MONOCRYSTALLINE SILICON AND METHOD OF PRODUC...

CRYSTAL GROWTH METHOD AND CRYSTAL GROWTH APPARATUS

CRYSTAL PULLING SYSTEM AND METHODS FOR PRODUCING MONOCRYSTALLINE IN...

NITROGEN DOPED AND VACANCY DOMINATED SILICON INGOT AND THERMALLY TR...

METHOD FOR VALIDATING THE THERMAL HISTORY OF A SEMICONDUCTOR INGOT

METHOD FOR CONTROLLING CONVECTION PATTERN OF SILICON MELT, METHOD F...

SINGLE CRYSTAL OF SILICON WITH <100> ORIENTATION, WHICH IS DOPED WI...

N-TYPE SILICON SINGLE CRYSTAL PRODUCTION METHOD, N-TYPE SILICON SIN...

SEMICONDUCTOR WAFER OF MONOCRYSTALLINE SILICON AND METHOD OF PRODUC...

METHOD AND APPARATUS FOR MANUFACTURING SILICON SINGLE CRYSTAL

TEMPERATURE CONTROL DEVICE FOR SINGLE CRYSTAL INGOT GROWTH AND TEMP...

Single Crystal Silicon Plate-Shaped Body and Production Method Ther...

CRYSTAL PULLING SYSTEMS AND METHODS FOR PRODUCING MONOCRYSTALLINE I...

SYSTEM FOR MEASURING MATERIAL THICKNESSES AT HIGH TEMPERATURES

C-PLANE SAPPHIRE METHOD AND APPARATUS

CRYSTAL PULLING SYSTEM AND METHOD FOR INHIBITING PRECIPITATE BUILD-...

CRYSTAL PULLING SYSTEMS AND METHODS FOR PRODUCING MONOCRYSTALLINE I...

THERMAL LOAD LEVELING USING ANISOTROPIC MATERIALS

METHOD FOR PRODUCING SINGLE CRYSTAL, AND METHOD FOR PRODUCING SILIC...