the thermal history of growing the ingot

Industry

CPC
C30B15/206

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Parent Industries

CCHEMISTRY METALLURGY C30Crystal growth C30BSINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL REFINING BY ZONE-MELTING OF MATERIAL PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH D... C30B15/00Single-crystal growth by pulling from a melt

Current Industry

C30B15/206the thermal history of growing the ingot

Industries

Patents Grantslast 30 patents

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- Michael R. Seacrist
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Information Patent Grant
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Nitrogen doped and vacancy dominated silicon ingot and thermally tr...
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- H01 - BASIC ELECTRIC ELEMENTS
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Information Patent Grant
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- H01 - BASIC ELECTRIC ELEMENTS
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Method for validating the thermal history of a semiconductor ingot
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- G05 - CONTROLLING REGULATING
Information Patent Grant
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Information Patent Grant
Crystal pulling systems and methods for producing monocrystalline i...
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- Issue date Jul 27, 2021
- GlobalWafers Co., Ltd.
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- C30 - CRYSTAL GROWTH
Information Patent Grant
Nitrogen doped and vacancy dominated silicon ingot and thermally tr...
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- GlobalWafers Co., Ltd.
- Zheng Lu
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Information Patent Grant
Single crystal silicon plate-shaped body
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Information Patent Grant
Method and apparatus for manufacturing silicon single crystal
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- Issue date Dec 8, 2020
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- C30 - CRYSTAL GROWTH
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Crystal growing systems and methods including a passive heater
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- Issue date Jul 23, 2019
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Method for producing single crystal, and method for producing silic...
- Patent number 10,233,562
- Issue date Mar 19, 2019
- Sumco Techxiv Corporation
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- C30 - CRYSTAL GROWTH
Information Patent Grant
Cooling rate control apparatus and ingot growing apparatus includin...
- Patent number 10,145,024
- Issue date Dec 4, 2018
- SK SILTRON CO., LTD.
- Won-Ju Lee
- C30 - CRYSTAL GROWTH
Information Patent Grant
Silicon wafer and method for manufacturing the same
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- Issue date Nov 27, 2018
- Globalwafers Japan Co., Ltd
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- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for growing a silicon crystal substrate from a melt by direc...
- Patent number 10,106,911
- Issue date Oct 23, 2018
- Varian Semiconductor Equipment Associates, Inc.
- Frederick M. Carlson
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Information Patent Grant
Method for growing silicon single crystal
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- Issue date Oct 16, 2018
- Shin-Etsu Handotai Co., Ltd.
- Ryoji Hoshi
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Information Patent Grant
Method for producing a silicon single crystal doped with red phosph...
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- C30 - CRYSTAL GROWTH
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- Patent number 10,020,203
- Issue date Jul 10, 2018
- Sumco Corporation
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Information Patent Grant
Method for growing a silicon single crystal while suppressing a gen...
- Patent number 9,988,736
- Issue date Jun 5, 2018
- Shin-Etsu Handotai Co., Ltd.
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Information Patent Grant
Method for growing silicon carbide crystal
- Patent number 9,951,439
- Issue date Apr 24, 2018
- Shin-Etsu Chemical Co., Ltd.
- Naofumi Shinya
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for growing silicon carbide crystal
- Patent number 9,945,047
- Issue date Apr 17, 2018
- Shin-Etsu Chemical Co., Ltd.
- Naofumi Shinya
- C30 - CRYSTAL GROWTH

Patents Applicationslast 30 patents

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INDIUM PHOSPHIDE SUBSTRATE, SEMICONDUCTOR EPITAXIAL WAFER, METHOD F...
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INGOT GROWING APPARATUS AND METHOD THEREOF
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- H01 - BASIC ELECTRIC ELEMENTS
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Method and System for Controlling Temperature during Crystal Growth
- Publication number 20230110359
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- XUZHOU XINJING SEMICONDUCTOR TECHNOLOGY CO., LTD
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- C30 - CRYSTAL GROWTH
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SEMICONDUCTOR WAFER OF MONOCRYSTALLINE SILICON AND METHOD OF PRODUC...
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- Siltronic AG
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CRYSTAL GROWTH METHOD AND CRYSTAL GROWTH APPARATUS
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- ZING SEMICONDUCTOR CORPORATION
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- GLOBALWAFERS CO., LTD.
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METHOD FOR VALIDATING THE THERMAL HISTORY OF A SEMICONDUCTOR INGOT
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METHOD FOR GROWING SILICON SINGLE CRYSTAL
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- Shin-Etsu Handotai Co., Ltd.
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- C30 - CRYSTAL GROWTH

the thermal history of growing the ingot

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Radio frequency silicon on insulator structure with superior perfor...

Indium phosphide substrate, semiconductor epitaxial wafer, method f...

Radio frequency silicon on insulator wafer platform with superior p...

Method for controlling convection pattern of silicon melt, method f...

Nitrogen doped and vacancy dominated silicon ingot and thermally tr...

Semiconductor wafer of monocrystalline silicon and method of produc...

Method for manufacturing ingot block, method for manufacturing semi...

Semiconductor wafer of monocrystalline silicon and method of produc...

Single crystal of silicon with <100> orientation, which is doped wi...

N-type silicon single crystal production method, n-type silicon sin...

Method for validating the thermal history of a semiconductor ingot

Crystal pulling systems and methods for producing monocrystalline i...

Temperature control device for single crystal ingot growth and temp...

Nitrogen doped and vacancy dominated silicon ingot and thermally tr...

Crystal pulling systems and methods for producing monocrystalline i...

Nitrogen doped and vacancy dominated silicon ingot and thermally tr...

Single crystal silicon plate-shaped body

Method and apparatus for manufacturing silicon single crystal

Crystal growing systems and methods including a passive heater

Method for producing single crystal, and method for producing silic...

Manufacturing method of silicon monocrystal

Cooling rate control apparatus and ingot growing apparatus includin...

Silicon wafer and method for manufacturing the same

Method for growing a silicon crystal substrate from a melt by direc...

Method for growing silicon single crystal

Method for producing a silicon single crystal doped with red phosph...

Epitaxial silicon wafer

Method for growing a silicon single crystal while suppressing a gen...

Method for growing silicon carbide crystal

Method for growing silicon carbide crystal

Patents Applicationslast 30 patents

SYSTEMS AND METHODS FOR COOLING A CHUNK POLYCRYSTALLINE FEEDER

VACANCY-RICH SILICON FOR USE WITH A GALLIUM NITRIDE EPITAXIAL LAYER

SEMI-INSULATING GALLIUM ARSENIDE SINGLE CRYSTAL, PREPARATION METHOD...

INDIUM PHOSPHIDE SUBSTRATE, SEMICONDUCTOR EPITAXIAL WAFER, METHOD F...

NITROGEN DOPED AND VACANCY DOMINATED SILICON INGOT AND THERMALLY TR...

INGOT GROWING APPARATUS AND METHOD THEREOF

RADIO FREQUENCY SILICON ON INSULATOR STRUCTURE WITH SUPERIOR PERFOR...

Method and System for Controlling Temperature during Crystal Growth

SEMICONDUCTOR WAFER OF MONOCRYSTALLINE SILICON AND METHOD OF PRODUC...

CRYSTAL GROWTH METHOD AND CRYSTAL GROWTH APPARATUS

CRYSTAL PULLING SYSTEM AND METHODS FOR PRODUCING MONOCRYSTALLINE IN...

NITROGEN DOPED AND VACANCY DOMINATED SILICON INGOT AND THERMALLY TR...

METHOD FOR VALIDATING THE THERMAL HISTORY OF A SEMICONDUCTOR INGOT

METHOD FOR CONTROLLING CONVECTION PATTERN OF SILICON MELT, METHOD F...

SINGLE CRYSTAL OF SILICON WITH <100> ORIENTATION, WHICH IS DOPED WI...

N-TYPE SILICON SINGLE CRYSTAL PRODUCTION METHOD, N-TYPE SILICON SIN...

SEMICONDUCTOR WAFER OF MONOCRYSTALLINE SILICON AND METHOD OF PRODUC...

METHOD AND APPARATUS FOR MANUFACTURING SILICON SINGLE CRYSTAL

TEMPERATURE CONTROL DEVICE FOR SINGLE CRYSTAL INGOT GROWTH AND TEMP...

Single Crystal Silicon Plate-Shaped Body and Production Method Ther...

CRYSTAL PULLING SYSTEMS AND METHODS FOR PRODUCING MONOCRYSTALLINE I...

SYSTEM FOR MEASURING MATERIAL THICKNESSES AT HIGH TEMPERATURES

C-PLANE SAPPHIRE METHOD AND APPARATUS

CRYSTAL PULLING SYSTEM AND METHOD FOR INHIBITING PRECIPITATE BUILD-...

CRYSTAL PULLING SYSTEMS AND METHODS FOR PRODUCING MONOCRYSTALLINE I...

THERMAL LOAD LEVELING USING ANISOTROPIC MATERIALS

METHOD FOR PRODUCING SINGLE CRYSTAL, AND METHOD FOR PRODUCING SILIC...

SILICON SINGLE CRYSTAL GROWING DEVICE AND METHOD OF GROWING THE SAME

COOLING RATE CONTROL APPARATUS AND INGOT GROWING APPARUTS INCLUDING...

METHOD FOR GROWING SILICON SINGLE CRYSTAL