the transistor being vertical

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H01L27/10841

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L27/00Devices consisting of a plurality of semiconductor or other solid state components formed in or on a common substrate

Current Industry

H01L27/10841the transistor being vertical

Industries

Patents Grantslast 30 patents

Information Patent Grant
Integrated assemblies having shield lines between digit lines, and...
- Patent number 11,581,317
- Issue date Feb 14, 2023
- Micron Technology, Inc.
- Sanh D. Tang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor memory device and method of manufacturing the same
- Patent number 11,411,007
- Issue date Aug 9, 2022
- Samsung Electronics Co., Ltd.
- Minsu Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming an array of vertical transistors
- Patent number 11,373,913
- Issue date Jun 28, 2022
- Micron Technology, Inc.
- Deepak Chandra Pandey
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Apparatuses having memory cells with two transistors and one capaci...
- Patent number 11,302,703
- Issue date Apr 12, 2022
- Micron Technology, Inc.
- Kamal M. Karda
- G11 - INFORMATION STORAGE
Information Patent Grant
Array of capacitors, array of memory cells, methods of forming an a...
- Patent number 11,244,952
- Issue date Feb 8, 2022
- Micron Technology, Inc.
- Sameer Chhajed
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Capacitor structure and method of forming the same
- Patent number 11,232,825
- Issue date Jan 25, 2022
- Yangtze Memory Technologies Co., Ltd.
- Liang Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit with vertically structured capacitive element, a...
- Patent number 11,139,303
- Issue date Oct 5, 2021
- STMicroelectronics (Rousset) SAS
- Abderrezak Marzaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit with vertically structured capacitive element, a...
- Patent number 11,081,488
- Issue date Aug 3, 2021
- STMicroelectronics (Rousset) SAS
- Abderrezak Marzaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated assemblies having shield lines between digit lines, and...
- Patent number 11,069,687
- Issue date Jul 20, 2021
- Micron Technology, Inc.
- Sanh D. Tang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Assemblies which include wordlines over gate electrodes
- Patent number 11,062,989
- Issue date Jul 13, 2021
- Micron Technology, Inc.
- Mitsunari Sukekawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory arrays with vertical access transistors
- Patent number 10,916,548
- Issue date Feb 9, 2021
- Micron Technology, Inc.
- Scott J. Derner
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory cells and memory arrays
- Patent number 10,854,611
- Issue date Dec 1, 2020
- Micron Technology, Inc.
- Suraj J. Mathew
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory cells and memory arrays
- Patent number 10,847,516
- Issue date Nov 24, 2020
- Micron Technology, Inc.
- Suraj J. Mathew
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Half-bridge circuit including a low-side transistor and a level shi...
- Patent number 10,833,066
- Issue date Nov 10, 2020
- Infineon Technologies Austria AG
- Armin Willmeroth
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit with vertically structured capacitive element, a...
- Patent number 10,818,669
- Issue date Oct 27, 2020
- STMicroelectronics (Rousset) SAS
- Abderrezak Marzaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Apparatuses having memory cells with two transistors and one capaci...
- Patent number 10,607,988
- Issue date Mar 31, 2020
- Micron Technology, Inc.
- Kamal M. Karda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Assemblies which include wordlines over gate electrodes
- Patent number 10,546,811
- Issue date Jan 28, 2020
- Micron Technology, Inc.
- Mitsunari Sukekawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Apparatuses having memory cells with two transistors and one capaci...
- Patent number 10,381,357
- Issue date Aug 13, 2019
- Micron Technology, Inc.
- Kamal M. Karda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory cells and memory arrays
- Patent number 10,361,204
- Issue date Jul 23, 2019
- Micron Technology, Inc.
- Suraj J. Mathew
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory cells and memory arrays
- Patent number 10,319,724
- Issue date Jun 11, 2019
- Micron Technology, Inc.
- Suraj J. Mathew
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory cells and memory arrays
- Patent number 10,079,235
- Issue date Sep 18, 2018
- Micron Technology, Inc.
- Suraj J. Mathew
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory cells and memory arrays
- Patent number 10,056,386
- Issue date Aug 21, 2018
- Micron Technology, Inc.
- Suraj J. Mathew
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor memory device provided with DRAM cell including two t...
- Patent number 10,020,311
- Issue date Jul 10, 2018
- AP MEMORY TECHNOLOGY CORPORATION
- Owen Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertically integrated memory cell
- Patent number 9,570,363
- Issue date Feb 14, 2017
- International Business Machines Corporation
- John E. Barth
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertically integrated memory cell
- Patent number 9,466,614
- Issue date Oct 11, 2016
- International Business Machines Corporation
- John E. Barth
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical devices and methods of forming
- Patent number 9,356,095
- Issue date May 31, 2016
- Micron Technology, Inc.
- Andrea Filippini
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Implementing eDRAM stacked FET structure
- Patent number 9,343,464
- Issue date May 17, 2016
- GLOBALFOUNDRIES, INC.
- Karl R. Erickson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dynamic random access memory unit and fabrication method thereof
- Patent number 9,312,262
- Issue date Apr 12, 2016
- Inotera Memories, Inc.
- Tzung-Han Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having efficient capacitor arrangement
- Patent number 9,177,947
- Issue date Nov 3, 2015
- PS4 Luxco S.A.R.L.
- Hiroyuki Fujimoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical devices and methods of forming
- Patent number 9,087,895
- Issue date Jul 21, 2015
- Micron Technology, Inc.
- Andrea Filippini
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
INTEGRATED CIRCUIT STRUCTURES HAVING MEMORY WITH BACKSIDE DRAM AND...
- Publication number 20230422485
- Publication date Dec 28, 2023
- Intel Corporation
- Abhishek Anil SHARMA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF
- Publication number 20230413532
- Publication date Dec 21, 2023
- CHANGXIN MEMORY TECHNOLOGIES, INC
- Min LI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND METHOD FOR MANUFACTURING THE SAME, MEMO...
- Publication number 20230301070
- Publication date Sep 21, 2023
- CHANGXIN MEMORY TECHNOLOGIES, INC
- Deyuan Xiao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY DEVICES WITH VERTICAL TRANSISTORS
- Publication number 20230276615
- Publication date Aug 31, 2023
- Intel Corporation
- Abhishek A. Sharma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL DRAM STRUCTURE AND METHOD OF FORMATION
- Publication number 20230240066
- Publication date Jul 27, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Sai-Hooi Yeong
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF
- Publication number 20230171952
- Publication date Jun 1, 2023
- CHANGXIN MEMORY TECHNOLOGIES, INC
- Deyuan XIAO
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY DEVICES HAVING VERTICAL TRANSISTORS AND METHODS FOR FORMING...
- Publication number 20230064388
- Publication date Mar 2, 2023
- Yangtze Memory Technologies Co., Ltd.
- Wei Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND DATA STORAGE SYSTEM INCLUDING THE SAME
- Publication number 20230026774
- Publication date Jan 26, 2023
- Samsung Electronics Co., Ltd.
- Sungmin HWANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20220328492
- Publication date Oct 13, 2022
- Samsung Electronics Co., Ltd.
- Minsu LEE
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR STRUCTURE AND METHOD OF FORMING THE SAME, MEMORY AND...
- Publication number 20220310625
- Publication date Sep 29, 2022
- ChangXin Memory Technologies, Inc.
- Yiming ZHU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Array Of Vertical Transistors
- Publication number 20220301941
- Publication date Sep 22, 2022
- Micron Technology, Inc.
- Deepak Chandra Pandey
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL NON-VOLATILE MEMORY DEVICES HAVING A MULTI-STACK STRUCTURE...
- Publication number 20220199626
- Publication date Jun 23, 2022
- Samsung Electronics Co., Ltd.
- Giyong Chung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Array Of Capacitors, Array Of Memory Cells, Methods Of Forming An A...
- Publication number 20220130845
- Publication date Apr 28, 2022
- Micron Technology, Inc.
- Sameer Chhajed
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR MEMORY DEVICE
- Publication number 20220102352
- Publication date Mar 31, 2022
- Samsung Electronics Co., Ltd.
- Kiseok LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NOVEL CAPACITOR STRUCTURE AND METHOD OF FORMING THE SAME
- Publication number 20220101906
- Publication date Mar 31, 2022
- Yangtze Memory Technologies Co., Ltd.
- Liang Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NOVEL CAPACITOR STRUCTURE AND METHOD OF FORMING THE SAME
- Publication number 20220059152
- Publication date Feb 24, 2022
- Yangtze Memory Technologies Co., Ltd.
- Liang Chen
- G11 - INFORMATION STORAGE
Information Patent Application
Integrated Assemblies Having Shield Lines Between Digit Lines, and...
- Publication number 20210327883
- Publication date Oct 21, 2021
- Micron Technology, Inc.
- Sanh D. Tang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20210159231
- Publication date May 27, 2021
- Samsung Electronics Co., Ltd.
- Minsu LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT WITH VERTICALLY STRUCTURED CAPACITIVE ELEMENT, A...
- Publication number 20210005612
- Publication date Jan 7, 2021
- STMicroelectronics (Rousset) SAS
- Abderrezak MARZAKI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT WITH VERTICALLY STRUCTURED CAPACITIVE ELEMENT, A...
- Publication number 20210005613
- Publication date Jan 7, 2021
- STMicroelectronics (Rousset) SAS
- Abderrezak MARZAKI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TWO-TERMINAL BIRISTOR WITH POLYSILICON EMITTER LAYER AND METHOD OF...
- Publication number 20200328305
- Publication date Oct 15, 2020
- KOREA ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY
- Yang-Kyu CHOI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Integrated Assemblies Having Shield Lines Between Digit Lines, and...
- Publication number 20200286895
- Publication date Sep 10, 2020
- Micron Technology, Inc.
- Sanh D. Tang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NOVEL CAPACITOR STRUCTURE AND METHOD OF FORMING THE SAME
- Publication number 20200265886
- Publication date Aug 20, 2020
- Yangtze Memory Technologies Co., Ltd.
- Liang Chen
- G11 - INFORMATION STORAGE
Information Patent Application
Apparatuses Having Memory Cells with Two Transistors and One Capaci...
- Publication number 20200203338
- Publication date Jun 25, 2020
- Micron Technology, Inc.
- Kamal M. Karda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Assemblies Which Include Wordlines Over Gate Electrodes
- Publication number 20200058584
- Publication date Feb 20, 2020
- Micron Technology, Inc.
- Mitsunari Sukekawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Memory Cells and Memory Arrays
- Publication number 20190326292
- Publication date Oct 24, 2019
- Micron Technology, Inc.
- Suraj J. Mathew
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Memory Cells and Memory Arrays
- Publication number 20190267379
- Publication date Aug 29, 2019
- Micron Technology, Inc.
- Suraj J. Mathew
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Apparatuses Having Memory Cells with Two Transistors and One Capaci...
- Publication number 20190259769
- Publication date Aug 22, 2019
- Micron Technology, Inc.
- Kamal M. Karda
- G11 - INFORMATION STORAGE
Information Patent Application
INTEGRATED CIRCUIT WITH VERTICALLY STRUCTURED CAPACITIVE ELEMENT, A...
- Publication number 20190067291
- Publication date Feb 28, 2019
- STMicroelectronics (Rousset) SAS
- Abderrezak MARZAKI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Memory Cells and Memory Arrays
- Publication number 20180301454
- Publication date Oct 18, 2018
- Micron Technology, Inc.
- Suraj J. Mathew
- G11 - INFORMATION STORAGE

the transistor being vertical

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Integrated assemblies having shield lines between digit lines, and...

Semiconductor memory device and method of manufacturing the same

Method of forming an array of vertical transistors

Apparatuses having memory cells with two transistors and one capaci...

Array of capacitors, array of memory cells, methods of forming an a...

Capacitor structure and method of forming the same

Integrated circuit with vertically structured capacitive element, a...

Integrated circuit with vertically structured capacitive element, a...

Integrated assemblies having shield lines between digit lines, and...

Assemblies which include wordlines over gate electrodes

Memory arrays with vertical access transistors

Memory cells and memory arrays

Memory cells and memory arrays

Half-bridge circuit including a low-side transistor and a level shi...

Integrated circuit with vertically structured capacitive element, a...

Apparatuses having memory cells with two transistors and one capaci...

Assemblies which include wordlines over gate electrodes

Apparatuses having memory cells with two transistors and one capaci...

Memory cells and memory arrays

Memory cells and memory arrays

Memory cells and memory arrays

Memory cells and memory arrays

Semiconductor memory device provided with DRAM cell including two t...

Vertically integrated memory cell

Vertically integrated memory cell

Vertical devices and methods of forming

Implementing eDRAM stacked FET structure

Dynamic random access memory unit and fabrication method thereof

Semiconductor device having efficient capacitor arrangement

Vertical devices and methods of forming

Patents Applicationslast 30 patents

INTEGRATED CIRCUIT STRUCTURES HAVING MEMORY WITH BACKSIDE DRAM AND...

SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF

SEMICONDUCTOR STRUCTURE AND METHOD FOR MANUFACTURING THE SAME, MEMO...

MEMORY DEVICES WITH VERTICAL TRANSISTORS

VERTICAL DRAM STRUCTURE AND METHOD OF FORMATION

SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF

MEMORY DEVICES HAVING VERTICAL TRANSISTORS AND METHODS FOR FORMING...

SEMICONDUCTOR DEVICE AND DATA STORAGE SYSTEM INCLUDING THE SAME

SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME

SEMICONDUCTOR STRUCTURE AND METHOD OF FORMING THE SAME, MEMORY AND...

Array Of Vertical Transistors

VERTICAL NON-VOLATILE MEMORY DEVICES HAVING A MULTI-STACK STRUCTURE...

Array Of Capacitors, Array Of Memory Cells, Methods Of Forming An A...

SEMICONDUCTOR MEMORY DEVICE

NOVEL CAPACITOR STRUCTURE AND METHOD OF FORMING THE SAME

NOVEL CAPACITOR STRUCTURE AND METHOD OF FORMING THE SAME

Integrated Assemblies Having Shield Lines Between Digit Lines, and...

SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME

INTEGRATED CIRCUIT WITH VERTICALLY STRUCTURED CAPACITIVE ELEMENT, A...

INTEGRATED CIRCUIT WITH VERTICALLY STRUCTURED CAPACITIVE ELEMENT, A...

TWO-TERMINAL BIRISTOR WITH POLYSILICON EMITTER LAYER AND METHOD OF...

Integrated Assemblies Having Shield Lines Between Digit Lines, and...

NOVEL CAPACITOR STRUCTURE AND METHOD OF FORMING THE SAME

Apparatuses Having Memory Cells with Two Transistors and One Capaci...

Assemblies Which Include Wordlines Over Gate Electrodes

Memory Cells and Memory Arrays

Memory Cells and Memory Arrays

Apparatuses Having Memory Cells with Two Transistors and One Capaci...

INTEGRATED CIRCUIT WITH VERTICALLY STRUCTURED CAPACITIVE ELEMENT, A...

Memory Cells and Memory Arrays