the two-dimensional charge carrier gas being at least partially not parallel to a main surface of the semiconductor body

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H01L29/7789

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

Current Industry

H01L29/7789the two-dimensional charge carrier gas being at least partially not parallel to a main surface of the semiconductor body

Industries

Patents Grantslast 30 patents

Information Patent Grant
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Information Patent Grant
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Information Patent Grant
Nitride semiconductor device
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Information Patent Grant
Manufacturing method for semiconductor device
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Information Patent Grant
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- Issue date Jan 9, 2024
- GUANGDONG ZHINENG TECHNOLOGY CO., LTD.
- Zilan Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three dimensional vertically structured electronic devices
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- Issue date Aug 29, 2023
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- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor layer structure
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- Issue date Jul 4, 2023
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Information Patent Grant
High electron mobility transistor (HEMT) devices and methods
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Information Patent Grant
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Information Patent Grant
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Information Patent Grant
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Information Patent Grant
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Information Patent Grant
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Information Patent Grant
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Information Patent Grant
Three dimensional vertically structured electronic devices
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- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
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Information Patent Grant
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Information Patent Grant
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- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three dimensional vertically structured MISFET/MESFET
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- Issue date Jan 26, 2021
- Lawrence Livermore National Security, LLC
- Adam Conway
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure for improving thermal stability and Schottk...
- Patent number 10,886,392
- Issue date Jan 5, 2021
- WIN Semiconductors Corp.
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- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
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- Issue date Sep 22, 2020
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- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lateral high electron mobility transistor with integrated clamp diode
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Information Patent Grant
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Information Patent Grant
Semiconductor device and method for manufacturing the same
- Patent number 10,629,724
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- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating device including two-dimensional material
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- Issue date Mar 24, 2020
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- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating device including two-dimensional material
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- Samsung Electronics Co., Ltd.
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- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lateral high electron mobility transistor with integrated clamp diode
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- Issue date Nov 26, 2019
- QROMIS, Inc.
- Vladimir Odnoblyudov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Forming of a MOS transistor based on a two-dimensional semiconducto...
- Patent number 10,340,361
- Issue date Jul 2, 2019
- Commissariat a l'Energie Atomique et Aux Energies Alternatives
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- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride semiconductor device
- Patent number 10,332,976
- Issue date Jun 25, 2019
- SHARP KABUSHIKI KAISHA
- Hisao Ichijoh
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

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NITRIDE SEMICONDUCTOR DEVICE
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SEMICONDUCTOR LAYER STRUCTURE
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- Epinovatech AB
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- H01 - BASIC ELECTRIC ELEMENTS
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Driving Circuit, Driving IC, and Driving System
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- GUANGDONG ZHINENG TECHNOLOGY CO., LTD.
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- H01 - BASIC ELECTRIC ELEMENTS
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SEMICONDUCTOR LAYER STRUCTURE
- Publication number 20220302293
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MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE
- Publication number 20220262943
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- WINBOND ELECTRONICS CORP.
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THREE DIMENSIONAL VERTICALLY STRUCTURED ELECTRONIC DEVICES
- Publication number 20210328057
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- LAWRENCE LIVERMORE NATIONAL SECURITY, LLC
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- H01 - BASIC ELECTRIC ELEMENTS
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THREE DIMENSIONAL VERTICALLY STRUCTURED ELECTRONIC DEVICES
- Publication number 20210159337
- Publication date May 27, 2021
- LAWRENCE LIVERMORE NATIONAL SECURITY, LLC
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SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20210143270
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- WINBOND ELECTRONICS CORP.
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HIGH ELECTRON MOBILITY TRANSISTOR (HEMT) DEVICES AND METHODS
- Publication number 20210091219
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- STMicroelectronics S.r.l.
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SEMICONDUCTOR STRUCTURE FOR IMPROVING THERMAL STABILITY AND SCHOTTK...
- Publication number 20200203517
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- WIN Semiconductors Corp.
- Jhih-Han DU
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GaN Lateral Vertical HJFET with Source-P Block Contact
- Publication number 20200119148
- Publication date Apr 16, 2020
- Gangfeng Ye
- H01 - BASIC ELECTRIC ELEMENTS
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LATERAL HIGH ELECTRON MOBILITY TRANSISTOR WITH INTEGRATED CLAMP DIODE
- Publication number 20200044033
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- QROMIS, Inc.
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- KABUSHIKI KAISHA TOSHIBA
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- H01 - BASIC ELECTRIC ELEMENTS
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- Publication date Aug 2, 2018
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FinFETs with Strained Well Regions
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METHOD AND APPARATUS FOR 3D CONCURRENT MULTIPLE PARALLEL 2D QUANTUM...
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- QUALCOMM Incorporated
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- H01 - BASIC ELECTRIC ELEMENTS
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- Publication number 20140306184
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- INFINEON TECHNOLOGIES AG
- Guenther Ruhl
- H01 - BASIC ELECTRIC ELEMENTS

the two-dimensional charge carrier gas being at least partially not parallel to a main surface of the semiconductor body

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Three dimensional vertically structured electronic devices

Semiconductor layer structure

Nitride semiconductor device

Manufacturing method for semiconductor device

Driving circuit, driving IC, and driving system

Three dimensional vertically structured electronic devices

Semiconductor layer structure

High electron mobility transistor (HEMT) devices and methods

Semiconductor device and manufacturing method thereof

Nitride semiconductor device

Device comprising 2D material

GaN lateral vertical HJFET with source-P block contact

Field-effect transistors with channel regions that include a two-di...

Semiconductor device and method of manufacturing semiconductor device

Three dimensional vertically structured electronic devices

Three dimensional vertically structured electronic devices

Gallium nitride transistor

Wurtzite heteroepitaxial structures with inclined sidewall facets f...

Three dimensional vertically structured MISFET/MESFET

Semiconductor structure for improving thermal stability and Schottk...

Semiconductor device

Lateral high electron mobility transistor with integrated clamp diode

Semiconductor device

Semiconductor device

Semiconductor device and method for manufacturing the same

Method of fabricating device including two-dimensional material

Method of fabricating device including two-dimensional material

Lateral high electron mobility transistor with integrated clamp diode

Forming of a MOS transistor based on a two-dimensional semiconducto...

Nitride semiconductor device

Patents Applicationslast 30 patents

FOLDED CHANNEL GALLIUM NITRIDE BASED FIELD-EFFECT TRANSISTOR AND ME...

NITRIDE SEMICONDUCTOR DEVICE

NITRIDE SEMICONDUCTOR DEVICE

SEMICONDUCTOR LAYER STRUCTURE

Driving Circuit, Driving IC, and Driving System

SEMICONDUCTOR LAYER STRUCTURE

MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE

THREE DIMENSIONAL VERTICALLY STRUCTURED ELECTRONIC DEVICES

THREE DIMENSIONAL VERTICALLY STRUCTURED ELECTRONIC DEVICES

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

HIGH ELECTRON MOBILITY TRANSISTOR (HEMT) DEVICES AND METHODS

SEMICONDUCTOR STRUCTURE FOR IMPROVING THERMAL STABILITY AND SCHOTTK...

GaN Lateral Vertical HJFET with Source-P Block Contact

LATERAL HIGH ELECTRON MOBILITY TRANSISTOR WITH INTEGRATED CLAMP DIODE

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

WURTZITE HETEROEPITAXIAL STRUCTURES WITH INCLINED SIDEWALL FACETS F...

SEMICONDUCTOR DEVICE

MUTILAYER STRUCTURE CONTAINING A CRYSTAL MATCHING LAYER FOR INCREAS...

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE

LATERAL HIGH ELECTRON MOBILITY TRANSISTOR WITH INTEGRATED CLAMP DIODE

FinFETs with Strained Well Regions

FinFETs with Strained Well Regions

FIELD EFFECT DIODE AND METHOD OF MANUFACTURING THE SAME

METHOD OF FABRICATING TRANSIENT SEMICONDUCTOR BASED ON SINGLE-WALL...

NITRIDE SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE

METHOD AND APPARATUS FOR 3D CONCURRENT MULTIPLE PARALLEL 2D QUANTUM...

METHOD AND APPARATUS FOR 3D CONCURRENT MULTIPLE PARALLEL 2D QUANTUM...

SEMICONDUCTOR DEVICE

TWO-DIMENSIONAL MATERIAL CONTAINING ELECTRONIC COMPONENTS