Three-dimensional arrangements

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H01L27/11597

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L27/00Devices consisting of a plurality of semiconductor or other solid state components formed in or on a common substrate

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H01L27/11597Three-dimensional arrangements

Industries

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Patents Grantslast 30 patents

Information Patent Grant
Semiconductor memory structure and method of manufacturing the same
- Patent number 11,683,936
- Issue date Jun 20, 2023
- Taiwan Semiconductor Manufacturing Company Ltd.
- Meng-Han Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory device, semiconductor device and manufacturing method of the...
- Patent number 11,678,492
- Issue date Jun 13, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Meng-Han Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices with ferroelectric layer and methods of manuf...
- Patent number 11,670,715
- Issue date Jun 6, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yen-Chieh Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional memory device and manufacturing method thereof
- Patent number 11,672,126
- Issue date Jun 6, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chao-I Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor memory device incorporating hafnium oxide insulative...
- Patent number 11,665,908
- Issue date May 30, 2023
- Kioxia Corporation
- Haruka Sakuma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor memory device and method of operating the semiconduct...
- Patent number 11,659,715
- Issue date May 23, 2023
- SK hynix Inc.
- Kun Young Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ferroelectric device film stacks with texturing layer, and method o...
- Patent number 11,659,714
- Issue date May 23, 2023
- Kepler Computing Inc.
- Niloy Mukherjee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ferroelectric memory device, manufacturing method of the ferroelect...
- Patent number 11,653,501
- Issue date May 16, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Rainer Yen-Chieh Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of selective film deposition and semiconductor feature made...
- Patent number 11,652,148
- Issue date May 16, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Song-Fu Liao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory array contact structures
- Patent number 11,653,500
- Issue date May 16, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chih-Yu Chang
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory devices
- Patent number 11,647,636
- Issue date May 9, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Meng-Han Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ferroelectric memory device and method of forming the same
- Patent number 11,647,635
- Issue date May 9, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chun-Chieh Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor memory devices and methods of manufacturing thereof
- Patent number 11,647,637
- Issue date May 9, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Meng-Han Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional memory device and method
- Patent number 11,647,634
- Issue date May 9, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Feng-Cheng Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory device and method of forming the same
- Patent number 11,637,126
- Issue date Apr 25, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chao-I Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional memory device with ferroelectric material
- Patent number 11,631,698
- Issue date Apr 18, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chun-Chieh Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor memory device, method of manufacturing the same, and...
- Patent number 11,626,498
- Issue date Apr 11, 2023
- Institute of Microelectronics, Chinese Academy of Sciences
- Huilong Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional semiconductor memory device including ferroelectr...
- Patent number 11,616,081
- Issue date Mar 28, 2023
- Samsung Electronics Co., Ltd.
- Chang Hwan Choi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional memory device with ferroelectric material
- Patent number 11,616,080
- Issue date Mar 28, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chao-I Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ferroelectric-type semiconductor memory device with hole transfer-t...
- Patent number 11,605,647
- Issue date Mar 14, 2023
- Kioxia Corporation
- Yusuke Tanaka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Air gaps in memory array structures
- Patent number 11,600,520
- Issue date Mar 7, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Sheng-Chen Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional ferroelectric memory device containing lattice-ma...
- Patent number 11,594,553
- Issue date Feb 28, 2023
- SanDisk Technologies LLC
- Rahul Sharangpani
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional memory device and method
- Patent number 11,587,823
- Issue date Feb 21, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Han-Jong Chia
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory device and method of forming the same
- Patent number 11,587,950
- Issue date Feb 21, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chao-I Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor memory structure and device
- Patent number 11,581,336
- Issue date Feb 14, 2023
- Taiwan Semiconductor Manufacturing Company Ltd.
- Yu-Ming Lin
- G11 - INFORMATION STORAGE
Information Patent Grant
Three-dimensional memory device and manufacturing method thereof
- Patent number 11,581,337
- Issue date Feb 14, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Sheng-Chen Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
3D ferroelectric memory
- Patent number 11,574,929
- Issue date Feb 7, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Sheng-Chen Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory cell array, semiconductor device including the same, and man...
- Patent number 11,569,165
- Issue date Jan 31, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- TsuChing Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method of the semiconductor...
- Patent number 11,563,032
- Issue date Jan 24, 2023
- SK hynix Inc.
- Kun Young Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor memory device and method of forming the same
- Patent number 11,557,645
- Issue date Jan 17, 2023
- Fujian Jinhua Integrated Circuit Co., Ltd.
- Pei-Ting Tsai
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
THREE-DIMENSIONAL FERROELECTRIC FIELD EFFECT TRANSISTOR RANDOM ACCE...
- Publication number 20240164107
- Publication date May 16, 2024
- Yangtze Memory Technologies Co., Ltd.
- Dongxue Zhao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICE AND METHOD OF MAKING THEREOF USING...
- Publication number 20240098992
- Publication date Mar 21, 2024
- SANDISK TECHNOLOGIES LLC
- Tatsuya HINOUE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR, MEMORY DEVICE AND MANUFACTURING METHOD OF MEMORY DEVICE
- Publication number 20240081077
- Publication date Mar 7, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Po-Tsun Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY DEVICE CONTAINING COMPOSITION-CONTROLLED FERROELECTRIC MEMOR...
- Publication number 20240064991
- Publication date Feb 22, 2024
- SANDISK TECHNOLOGIES LLC
- Kartik SONDHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY DEVICE AND METHOD OF FORMING THE SAME
- Publication number 20240064994
- Publication date Feb 22, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chieh-Fang Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY DEVICE CONTAINING COMPOSITION-CONTROLLED FERROELECTRIC MEMOR...
- Publication number 20240064992
- Publication date Feb 22, 2024
- SANDISK TECHNOLOGIES LLC
- Rahul SHARANGPANI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FABRICATING TRANSISTOR STRUCTURE
- Publication number 20240064993
- Publication date Feb 22, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Song-Fu Liao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NON-VOLATILE MEMORY DEVICE
- Publication number 20240032302
- Publication date Jan 25, 2024
- SK HYNIX INC.
- Woo Cheol LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
3D LATERAL PATTERNING VIA SELECTIVE DEPOSITION FOR FERROELECTRIC DE...
- Publication number 20240032300
- Publication date Jan 25, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Song-Fu Liao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR MEMORY DEVICE AND MANUFACTURING METHOD OF SEMICONDUCT...
- Publication number 20240015965
- Publication date Jan 11, 2024
- SK HYNIX INC.
- Ga Ram CHOI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE INCLUDING FERROELECTRIC LAYER
- Publication number 20240008284
- Publication date Jan 4, 2024
- SK HYNIX INC.
- Joong Sik KIM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICE CONTAINING TEMPLATED CRYSTALLINE FE...
- Publication number 20240008281
- Publication date Jan 4, 2024
- SANDISK TECHNOLOGIES LLC
- Kartik SONDHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE INCLUDING OXIDE CHANNEL LAYER AND FERROELECTRI...
- Publication number 20240008282
- Publication date Jan 4, 2024
- SK HYNIX INC.
- Mir IM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE STRUCTURE AND METHODS OF FORMING THE SAME
- Publication number 20230413571
- Publication date Dec 21, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Wen-Ling LU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
- Publication number 20230413573
- Publication date Dec 21, 2023
- SK HYNIX INC.
- Mir IM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR MEMORY DEVICES AND METHODS OF MANUFACTURING THEREOF
- Publication number 20230403858
- Publication date Dec 14, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Meng-Han Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY CELL, MEMORY ARRAY AND MANUFACTURING METHOD THEREOF
- Publication number 20230397426
- Publication date Dec 7, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yu-Wei Jiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NAND STRUCTURES WITH POLARIZED MATERIALS
- Publication number 20230371264
- Publication date Nov 16, 2023
- Micron Technology, Inc.
- Albert Fayrushin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY DEVICE, AND METHODS THEREOF
- Publication number 20230371268
- Publication date Nov 16, 2023
- Ferroelectric Memory GmbH
- Stefan Ferdinand Müller
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY DEVICE AND METHOD FOR FORMING THE SAME
- Publication number 20230363170
- Publication date Nov 9, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Kuan-Ting CHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY DEVICE AND FORMING METHOD THEREOF
- Publication number 20230328998
- Publication date Oct 12, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Meng-Han Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20230328995
- Publication date Oct 12, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Meng-Han Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR MEMORY DEVICE HAVING WORD LINES SURROUNDED BY MEMORY...
- Publication number 20230317616
- Publication date Oct 5, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Meng-Han Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURE OF THREE-DIMENSIONAL MEMORY ARRAY
- Publication number 20230269946
- Publication date Aug 24, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Meng-Han LIN
- G11 - INFORMATION STORAGE
Information Patent Application
FERROELECTRIC MEMORY DEVICE AND METHOD OF MAKING THE SAME
- Publication number 20230262986
- Publication date Aug 17, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Wen-Ling LU
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY STRUCTURE INCLUDING THREE-DIMENSIONAL NOR MEMORY STRINGS OF...
- Publication number 20230262988
- Publication date Aug 17, 2023
- Sunrise Memory Corporation
- Eli Harari
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY STRUCTURE OF THREE-DIMENSIONAL NOR MEMORY STRINGS OF JUNCTIO...
- Publication number 20230262987
- Publication date Aug 17, 2023
- Sunrise Memory Corporation
- Eli Harari
- G11 - INFORMATION STORAGE
Information Patent Application
VERTICALLY INTEGRATED SEMICONDUCTOR DEVICE
- Publication number 20230238285
- Publication date Jul 27, 2023
- International Business Machines Corporation
- Heng Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY DEVICES AND METHODS OF MANUFACTURING THEREOF
- Publication number 20230238324
- Publication date Jul 27, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chung-Liang Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY DEVICE, AND MANUFACTURING METHOD AND DRIVING METHOD THEREOF
- Publication number 20230232635
- Publication date Jul 20, 2023
- CHANGXIN MEMORY TECHNOLOGIES, INC
- Shuai GUO
- H01 - BASIC ELECTRIC ELEMENTS

Three-dimensional arrangements

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Semiconductor memory structure and method of manufacturing the same

Memory device, semiconductor device and manufacturing method of the...

Semiconductor devices with ferroelectric layer and methods of manuf...

Three-dimensional memory device and manufacturing method thereof

Semiconductor memory device incorporating hafnium oxide insulative...

Semiconductor memory device and method of operating the semiconduct...

Ferroelectric device film stacks with texturing layer, and method o...

Ferroelectric memory device, manufacturing method of the ferroelect...

Method of selective film deposition and semiconductor feature made...

Memory array contact structures

Memory devices

Ferroelectric memory device and method of forming the same

Semiconductor memory devices and methods of manufacturing thereof

Three-dimensional memory device and method

Memory device and method of forming the same

Three-dimensional memory device with ferroelectric material

Semiconductor memory device, method of manufacturing the same, and...

Three-dimensional semiconductor memory device including ferroelectr...

Three-dimensional memory device with ferroelectric material

Ferroelectric-type semiconductor memory device with hole transfer-t...

Air gaps in memory array structures

Three-dimensional ferroelectric memory device containing lattice-ma...

Three-dimensional memory device and method

Memory device and method of forming the same

Semiconductor memory structure and device

Three-dimensional memory device and manufacturing method thereof

3D ferroelectric memory

Memory cell array, semiconductor device including the same, and man...

Semiconductor device and manufacturing method of the semiconductor...

Semiconductor memory device and method of forming the same

Patents Applicationslast 30 patents

THREE-DIMENSIONAL FERROELECTRIC FIELD EFFECT TRANSISTOR RANDOM ACCE...

THREE-DIMENSIONAL MEMORY DEVICE AND METHOD OF MAKING THEREOF USING...

TRANSISTOR, MEMORY DEVICE AND MANUFACTURING METHOD OF MEMORY DEVICE

MEMORY DEVICE CONTAINING COMPOSITION-CONTROLLED FERROELECTRIC MEMOR...

MEMORY DEVICE AND METHOD OF FORMING THE SAME

MEMORY DEVICE CONTAINING COMPOSITION-CONTROLLED FERROELECTRIC MEMOR...

METHOD OF FABRICATING TRANSISTOR STRUCTURE

NON-VOLATILE MEMORY DEVICE

3D LATERAL PATTERNING VIA SELECTIVE DEPOSITION FOR FERROELECTRIC DE...

SEMICONDUCTOR MEMORY DEVICE AND MANUFACTURING METHOD OF SEMICONDUCT...

SEMICONDUCTOR DEVICE INCLUDING FERROELECTRIC LAYER

THREE-DIMENSIONAL MEMORY DEVICE CONTAINING TEMPLATED CRYSTALLINE FE...

SEMICONDUCTOR DEVICE INCLUDING OXIDE CHANNEL LAYER AND FERROELECTRI...

SEMICONDUCTOR DEVICE STRUCTURE AND METHODS OF FORMING THE SAME

SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

SEMICONDUCTOR MEMORY DEVICES AND METHODS OF MANUFACTURING THEREOF

MEMORY CELL, MEMORY ARRAY AND MANUFACTURING METHOD THEREOF

NAND STRUCTURES WITH POLARIZED MATERIALS

MEMORY DEVICE, AND METHODS THEREOF

MEMORY DEVICE AND METHOD FOR FORMING THE SAME

MEMORY DEVICE AND FORMING METHOD THEREOF

SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME

SEMICONDUCTOR MEMORY DEVICE HAVING WORD LINES SURROUNDED BY MEMORY...

STRUCTURE OF THREE-DIMENSIONAL MEMORY ARRAY

FERROELECTRIC MEMORY DEVICE AND METHOD OF MAKING THE SAME

MEMORY STRUCTURE INCLUDING THREE-DIMENSIONAL NOR MEMORY STRINGS OF...

MEMORY STRUCTURE OF THREE-DIMENSIONAL NOR MEMORY STRINGS OF JUNCTIO...

VERTICALLY INTEGRATED SEMICONDUCTOR DEVICE

MEMORY DEVICES AND METHODS OF MANUFACTURING THEREOF

MEMORY DEVICE, AND MANUFACTURING METHOD AND DRIVING METHOD THEREOF