Thyristors

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H01L29/66363

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

Current Industry

H01L29/66363Thyristors

Industries

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Patents Grantslast 30 patents

Information Patent Grant
Thyristor semiconductor device and corresponding manufacturing method
- Patent number 12,034,046
- Issue date Jul 9, 2024
- STMicroelectronics (Crolles 2) SAS
- Nicolas Guitard
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon-controlled rectifiers in a silicon-on-insulator technology
- Patent number 11,935,946
- Issue date Mar 19, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Shesh Mani Pandey
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Etch stop layer for injecting carriers into drift layer for a verti...
- Patent number 11,916,138
- Issue date Feb 27, 2024
- Pakal Technologies, Inc.
- Paul M Moore
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor memory devices
- Patent number 11,887,648
- Issue date Jan 30, 2024
- Samsung Electronics Co., Ltd.
- Jaeho Hong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical memory device and method for fabricating vertical memory d...
- Patent number 11,830,879
- Issue date Nov 28, 2023
- SK hynix Inc.
- Nam-Jae Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated gate-commutated thyristor (IGCT)
- Patent number 11,824,091
- Issue date Nov 21, 2023
- Hitachi Energy Switzerland AG
- Tobias Wikstroem
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon-controlled rectifiers for an electrostatic discharge protec...
- Patent number 11,776,952
- Issue date Oct 3, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Sagar Premnath Karalkar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Anti-parallel diode formed using damaged crystal structure in a ver...
- Patent number 11,757,017
- Issue date Sep 12, 2023
- Pakal Technologies, Inc.
- Paul M Moore
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate-turn-off thyristor and manufacturing method thereof
- Patent number 11,705,510
- Issue date Jul 18, 2023
- HANGZHOU UG MIN SEMICONDUCTOR TECHNOLOGY CO. LTD
- Simin Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor memory device
- Patent number 11,621,264
- Issue date Apr 4, 2023
- Samsung Electronics Co., Ltd.
- Hyuncheol Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-layer random access memory and methods of manufacture
- Patent number 11,605,636
- Issue date Mar 14, 2023
- TC Lab, Inc.
- Harry Luan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Thyristor semiconductor device and corresponding manufacturing method
- Patent number 11,398,549
- Issue date Jul 26, 2022
- STMicroelectronics (Crolles 2) SAS
- Nicolas Guitard
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
3D stacked high-density memory cell arrays and methods of manufacture
- Patent number 11,222,681
- Issue date Jan 11, 2022
- TC Lab, Inc.
- Harry Luan
- G11 - INFORMATION STORAGE
Information Patent Grant
Method of manufacturing semiconductor integrated circuit
- Patent number 11,164,797
- Issue date Nov 2, 2021
- Fuji Electric Co., Ltd.
- Yoshiaki Toyoda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Insulated gate turn-off device with designated breakdown areas betw...
- Patent number 11,114,552
- Issue date Sep 7, 2021
- Pakal Technologies, Inc.
- Paul M. Moore
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Thyristor volatile random access memory and methods of manufacture
- Patent number 11,114,438
- Issue date Sep 7, 2021
- TC Lab, Inc.
- Harry Luan
- G11 - INFORMATION STORAGE
Information Patent Grant
Lateral insulated gate turn-off device with induced emitter
- Patent number 11,114,553
- Issue date Sep 7, 2021
- Pakal Technologies, Inc.
- Richard A. Blanchard
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming a thyristor-based random access memory using fin...
- Patent number 11,094,696
- Issue date Aug 17, 2021
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Eng Huat Toh
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor device having three-dimensional structure and method...
- Patent number 11,056,485
- Issue date Jul 6, 2021
- SK hynix Inc.
- Hae Ri Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical memory device and method for fabricating vertical memory d...
- Patent number 10,998,316
- Issue date May 4, 2021
- SK hynix Inc.
- Nam-Jae Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Array of gated devices and methods of forming an array of gated dev...
- Patent number 10,923,387
- Issue date Feb 16, 2021
- Micron Technology, Inc.
- Marcello Mariani
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
ESD protection silicon controlled rectifier device
- Patent number 10,879,231
- Issue date Dec 29, 2020
- DB HITEK CO., LTD.
- Seok Soon Noh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-layer random access memory and methods of manufacture
- Patent number 10,748,903
- Issue date Aug 18, 2020
- TC Lab, Inc.
- Harry Luan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon-controlled rectifier structure and manufacturing method the...
- Patent number 10,700,186
- Issue date Jun 30, 2020
- Tianzhi Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electrostatic discharge protection structure, method for manufactur...
- Patent number 10,672,758
- Issue date Jun 2, 2020
- Infineon Technologies AG
- Vadim Valentinovic Vendt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
3D stacked high-density memory cell arrays and methods of manufacture
- Patent number 10,636,473
- Issue date Apr 28, 2020
- TC Lab, Inc.
- Harry Luan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Unidirectional ESD protection with buried breakdown thyristor device
- Patent number 10,629,715
- Issue date Apr 21, 2020
- NXP USA, INC.
- Evgueniy Nikolov Stefanov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of charge controlled patterning during reactive ion etching
- Patent number 10,573,526
- Issue date Feb 25, 2020
- International Business Machines Corporation
- Sunit S. Mahajan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Thyristor volatile random access memory and methods of manufacture
- Patent number 10,553,588
- Issue date Feb 4, 2020
- TC Lab, Inc.
- Harry Luan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Thyristor volatile random access memory and methods of manufacture
- Patent number 10,529,718
- Issue date Jan 7, 2020
- TC Lab, Inc.
- Harry Luan
- G11 - INFORMATION STORAGE

Patents Applicationslast 30 patents

Information Patent Application
METHOD OF PEAK ON-STATE VOLTAGE REDUCTION FOR SEMICONDUCTOR DEVICE...
- Publication number 20240290828
- Publication date Aug 29, 2024
- Littelfuse Semiconductor (Wuxi) Co., Ltd
- Xingchong Gu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH PERFORMANCE SILICON CONTROLLED RECTIFIER DEVICES
- Publication number 20240282847
- Publication date Aug 22, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Shesh Mani PANDEY
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR MEMORY DEVICES
- Publication number 20240119984
- Publication date Apr 11, 2024
- Samsung Electronics Co., Ltd.
- JAEHO HONG
- G11 - INFORMATION STORAGE
Information Patent Application
THYRISTOR AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20240006510
- Publication date Jan 4, 2024
- SHINDENGEN ELECTRIC MANUFACTURING CO., LTD
- Kanae ENDO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON-CONTROLLED RECTIFIERS IN A SILICON-ON-INSULATOR TECHNOLOGY
- Publication number 20230420551
- Publication date Dec 28, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Shesh Mani Pandey
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POWER SEMICONDUCTOR DEVICE
- Publication number 20230317818
- Publication date Oct 5, 2023
- Hitachi Energy Switzerland AG
- Jan VOBECKY
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Integrated Gate-Commutated Thyristor (IGCT)
- Publication number 20230111333
- Publication date Apr 13, 2023
- Hitachi Energy Switzerland AG
- Tobias Wikstroem
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ANTI-PARALLEL DIODE FORMED USING DAMAGED CRYSTAL STRUCTURE IN A VER...
- Publication number 20220344493
- Publication date Oct 27, 2022
- Pakal Technologies, Inc.
- Paul M. Moore
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ETCH STOP LAYER FOR INJECTING CARRIERS INTO DRIFT LAYER FOR A VERTI...
- Publication number 20220344498
- Publication date Oct 27, 2022
- Pakal Technologies, Inc.
- Paul M. Moore
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THYRISTOR SEMICONDUCTOR DEVICE AND CORRESPONDING MANUFACTURING METHOD
- Publication number 20220328629
- Publication date Oct 13, 2022
- STMicroelectronics (Crolles 2) SAS
- Nicolas GUITARD
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR MEMORY DEVICES
- Publication number 20220108741
- Publication date Apr 7, 2022
- Samsung Electronics Co., Ltd.
- JAEHO HONG
- G11 - INFORMATION STORAGE
Information Patent Application
Gate-turn-off thyristor and manufacturing method thereof
- Publication number 20210257485
- Publication date Aug 19, 2021
- HANGZHOU UG MIN SEMICONDUCTOR TECHNOLOGY CO. LTD
- Simin LI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL MEMORY DEVICE AND METHOD FOR FABRICATING VERTICAL MEMORY D...
- Publication number 20210225843
- Publication date Jul 22, 2021
- SK HYNIX INC.
- Nam-Jae LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Thyristor Volatile Random Access Memory and Methods of Manufacture
- Publication number 20210057415
- Publication date Feb 25, 2021
- TC Lab, Inc.
- Harry Luan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL MEMORY DEVICE AND METHOD FOR FABRICATING VERTICAL MEMORY D...
- Publication number 20210028174
- Publication date Jan 28, 2021
- SK HYNIX INC.
- Nam-Jae LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Multi-Layer Random Access Memory and Methods of Manufacture
- Publication number 20200381434
- Publication date Dec 3, 2020
- TC Lab, Inc.
- Harry Luan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LATERAL INSULATED GATE TURN-OFF DEVICE WITH INDUCED EMITTER
- Publication number 20200312987
- Publication date Oct 1, 2020
- Pakal Technologies, Inc.
- Richard A. Blanchard
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INSULATED GATE TURN-OFF DEVICE WITH DESIGNATED BREAKDOWN AREAS BETW...
- Publication number 20200312988
- Publication date Oct 1, 2020
- Pakal Technologies, Inc.
- Paul M. Moore
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THYRISTOR SEMICONDUCTOR DEVICE AND CORRESPONDING MANUFACTURING METHOD
- Publication number 20200258981
- Publication date Aug 13, 2020
- STMicroelectronics (Crolles 2) SAS
- Nicolas GUITARD
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
3D Stacked High-Density Memory Cell Arrays and Methods of Manufacture
- Publication number 20200258562
- Publication date Aug 13, 2020
- TC Lab, Inc.
- Harry Luan
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR DEVICE HAVING THREE-DIMENSIONAL STRUCTURE AND METHOD...
- Publication number 20200194426
- Publication date Jun 18, 2020
- SK HYNIX INC.
- Hae Ri KIM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ADVANCED FIELD STOP THYRISTOR STRUCTURE AND MANUFACTURE METHODS
- Publication number 20200119173
- Publication date Apr 16, 2020
- Littelfuse Semiconductor (Wuxi) Co., Ltd
- Ader Shen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON-CONTROLLED RECTIFIER STRUCTURE AND MANUFACTURING METHOD THE...
- Publication number 20200058781
- Publication date Feb 20, 2020
- SHANGHAI HUALI MICROELECTRONICS CORPORATION
- Tianzhi ZHU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Thyristor Volatile Random Access Memory and Methods of Manufacture
- Publication number 20200043930
- Publication date Feb 6, 2020
- TC Lab, Inc.
- Harry Luan
- G11 - INFORMATION STORAGE
Information Patent Application
UNIDIRECTIONAL ESD PROTECTION WITH BURIED BREAKDOWN THYRISTOR DEVICE
- Publication number 20200013885
- Publication date Jan 9, 2020
- NXP USA, Inc.
- Evgueniy Nikolov Stefanov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Array Of Gated Devices And Methods Of Forming An Array Of Gated Dev...
- Publication number 20200013669
- Publication date Jan 9, 2020
- Micron Technology, Inc.
- Marcello Mariani
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL SEMICONDUCTOR DEVICE WITH THINNED SUBSTRATE
- Publication number 20190386026
- Publication date Dec 19, 2019
- QUALCOMM Incorporated
- Stuart B. Molin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Multi-Layer Random Access Memory and Methods of Manufacture
- Publication number 20190326293
- Publication date Oct 24, 2019
- TC Lab, Inc.
- Harry Luan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ESD PROTECTION SILICON CONTROLLED RECTIFIER DEVICE
- Publication number 20190319024
- Publication date Oct 17, 2019
- DB HITEK CO., LTD.
- Seok Soon Noh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THYRISTOR RANDOM ACCESS MEMORY
- Publication number 20190115350
- Publication date Apr 18, 2019
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- Eng Huat TOH
- H01 - BASIC ELECTRIC ELEMENTS

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Thyristor semiconductor device and corresponding manufacturing method

Silicon-controlled rectifiers in a silicon-on-insulator technology

Etch stop layer for injecting carriers into drift layer for a verti...

Semiconductor memory devices

Vertical memory device and method for fabricating vertical memory d...

Integrated gate-commutated thyristor (IGCT)

Silicon-controlled rectifiers for an electrostatic discharge protec...

Anti-parallel diode formed using damaged crystal structure in a ver...

Gate-turn-off thyristor and manufacturing method thereof

Semiconductor memory device

Multi-layer random access memory and methods of manufacture

Thyristor semiconductor device and corresponding manufacturing method

3D stacked high-density memory cell arrays and methods of manufacture

Method of manufacturing semiconductor integrated circuit

Insulated gate turn-off device with designated breakdown areas betw...

Thyristor volatile random access memory and methods of manufacture

Lateral insulated gate turn-off device with induced emitter

Methods of forming a thyristor-based random access memory using fin...

Semiconductor device having three-dimensional structure and method...

Vertical memory device and method for fabricating vertical memory d...

Array of gated devices and methods of forming an array of gated dev...

ESD protection silicon controlled rectifier device

Multi-layer random access memory and methods of manufacture

Silicon-controlled rectifier structure and manufacturing method the...

Electrostatic discharge protection structure, method for manufactur...

3D stacked high-density memory cell arrays and methods of manufacture

Unidirectional ESD protection with buried breakdown thyristor device

Method of charge controlled patterning during reactive ion etching

Thyristor volatile random access memory and methods of manufacture

Thyristor volatile random access memory and methods of manufacture

Patents Applicationslast 30 patents

METHOD OF PEAK ON-STATE VOLTAGE REDUCTION FOR SEMICONDUCTOR DEVICE...

HIGH PERFORMANCE SILICON CONTROLLED RECTIFIER DEVICES

SEMICONDUCTOR MEMORY DEVICES

THYRISTOR AND METHOD FOR MANUFACTURING THE SAME

SILICON-CONTROLLED RECTIFIERS IN A SILICON-ON-INSULATOR TECHNOLOGY

POWER SEMICONDUCTOR DEVICE

Integrated Gate-Commutated Thyristor (IGCT)

ANTI-PARALLEL DIODE FORMED USING DAMAGED CRYSTAL STRUCTURE IN A VER...

ETCH STOP LAYER FOR INJECTING CARRIERS INTO DRIFT LAYER FOR A VERTI...

THYRISTOR SEMICONDUCTOR DEVICE AND CORRESPONDING MANUFACTURING METHOD

SEMICONDUCTOR MEMORY DEVICES

Gate-turn-off thyristor and manufacturing method thereof

VERTICAL MEMORY DEVICE AND METHOD FOR FABRICATING VERTICAL MEMORY D...

Thyristor Volatile Random Access Memory and Methods of Manufacture

VERTICAL MEMORY DEVICE AND METHOD FOR FABRICATING VERTICAL MEMORY D...

Multi-Layer Random Access Memory and Methods of Manufacture

LATERAL INSULATED GATE TURN-OFF DEVICE WITH INDUCED EMITTER

INSULATED GATE TURN-OFF DEVICE WITH DESIGNATED BREAKDOWN AREAS BETW...

THYRISTOR SEMICONDUCTOR DEVICE AND CORRESPONDING MANUFACTURING METHOD

3D Stacked High-Density Memory Cell Arrays and Methods of Manufacture

SEMICONDUCTOR DEVICE HAVING THREE-DIMENSIONAL STRUCTURE AND METHOD...

ADVANCED FIELD STOP THYRISTOR STRUCTURE AND MANUFACTURE METHODS

SILICON-CONTROLLED RECTIFIER STRUCTURE AND MANUFACTURING METHOD THE...

Thyristor Volatile Random Access Memory and Methods of Manufacture

UNIDIRECTIONAL ESD PROTECTION WITH BURIED BREAKDOWN THYRISTOR DEVICE

Array Of Gated Devices And Methods Of Forming An Array Of Gated Dev...

VERTICAL SEMICONDUCTOR DEVICE WITH THINNED SUBSTRATE

Multi-Layer Random Access Memory and Methods of Manufacture

ESD PROTECTION SILICON CONTROLLED RECTIFIER DEVICE

THYRISTOR RANDOM ACCESS MEMORY