to produce a nuclear reaction transmuting chemical elements

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H01L21/261

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

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H01L21/261to produce a nuclear reaction transmuting chemical elements

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Patents Grantslast 30 patents

Information Patent Grant
Photonuclear transmutation doping in gallium-based semiconductor ma...
- Patent number 11,551,932
- Issue date Jan 10, 2023
- The Curators of the University of Missouri
- Jae Wan Kwon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low defect nuclear transmutation doping in nitride-based semiconduc...
- Patent number 11,515,161
- Issue date Nov 29, 2022
- The Curators of the University of Missouri
- Jae Wan Kwon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Apparatus and method for neutron transmutation doping of semiconduc...
- Patent number 11,250,966
- Issue date Feb 15, 2022
- Infineon Technologies AG
- Markus Bina
- C30 - CRYSTAL GROWTH
Information Patent Grant
Low resistance contact method and structure
- Patent number 10,510,851
- Issue date Dec 17, 2019
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yu-Sheng Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Apparatus and method for neutron transmutation doping of semiconduc...
- Patent number 10,468,148
- Issue date Nov 5, 2019
- Infineon Technologies AG
- Markus Bina
- G21 - NUCLEAR PHYSICS NUCLEAR ENGINEERING
Information Patent Grant
Methods of doping semiconductor materials and metastable doped semi...
- Patent number 10,290,752
- Issue date May 14, 2019
- ST3 LLC
- A. K. Vasudevan
- C30 - CRYSTAL GROWTH
Information Patent Grant
Semiconductor and other materials by thermal neutron transmutation
- Patent number 9,887,087
- Issue date Feb 6, 2018
- Michael Keith Fuller
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for postdoping a semiconductor wafer
- Patent number 9,559,020
- Issue date Jan 31, 2017
- Infineon Technologies AG
- Reinhard Ploss
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device manufacturing method
- Patent number 9,324,857
- Issue date Apr 26, 2016
- Rohm Co., Ltd.
- Toshio Nakajima
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for postdoping a semiconductor wafer
- Patent number 9,245,811
- Issue date Jan 26, 2016
- Infineon Technologies AG
- Reinhard Ploss
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device manufacturing method
- Patent number 9,029,207
- Issue date May 12, 2015
- Rohm Co., Ltd.
- Toshio Nakajima
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method thereof
- Patent number 8,786,029
- Issue date Jul 22, 2014
- Rohm Co., Ltd.
- Toshio Nakajima
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon single crystal wafer for IGBT and method for manufacturing...
- Patent number 8,617,311
- Issue date Dec 31, 2013
- Sumco Corporation
- Toshiaki Ono
- C30 - CRYSTAL GROWTH
Information Patent Grant
Silicon wafer and method for producing the same
- Patent number 8,460,463
- Issue date Jun 11, 2013
- Sumco Corporation
- Shigeru Umeno
- C30 - CRYSTAL GROWTH
Information Patent Grant
Doping of semiconductor materials by nuclear transmutation
- Patent number 8,363,775
- Issue date Jan 29, 2013
- The United States of America as represented by the Secretary of the Navy
- Noel A. Guardala
- G21 - NUCLEAR PHYSICS NUCLEAR ENGINEERING
Information Patent Grant
Semiconductor device with a semiconductor body and method for its p...
- Patent number 7,880,260
- Issue date Feb 1, 2011
- Infineon Technology Austria AG
- Elmar Falck
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Doping wide band gap semiconductors
- Patent number 7,795,120
- Issue date Sep 14, 2010
- The United States of America as represented by the Secretary of the Navy
- Jack L. Price
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Manufacturing method of silicon wafer
- Patent number 7,563,319
- Issue date Jul 21, 2009
- Sumitomo Mitsubishi Silicon Corporation
- Shigeru Umeno
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electron device which controls quantum chaos and quantum chaos cont...
- Patent number 6,952,019
- Issue date Oct 4, 2005
- Sony Corporation
- Ryuichi Ugajin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor component with enhanced avalanche ruggedness
- Patent number 6,838,729
- Issue date Jan 4, 2005
- Infineon Technologies AG
- Andreas Schlögl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making a semiconductor wafer having a depletable multiple...
- Patent number 6,703,292
- Issue date Mar 9, 2004
- Koninklijke Philips Electronics N.V.
- Raymond J. Grover
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Universal semiconductor wafer for high-voltage semiconductor compon...
- Patent number 6,646,304
- Issue date Nov 11, 2003
- Infineon Technologies AG
- Jenö Tihanyi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power MOSFET and IGBT with optimized on-resistance and breakdown vo...
- Patent number 6,359,309
- Issue date Mar 19, 2002
- Industrial Technology Research Institute
- Chungpin Liao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Manufacturing method of semiconductor device
- Patent number 6,346,464
- Issue date Feb 12, 2002
- Kabushiki Kaisha Toshiba
- Toru Takeda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making power MOSFET and IGBT with optimized on-resistance...
- Patent number 6,190,970
- Issue date Feb 20, 2001
- Industrial Technology Research Institute
- Chungpin Liao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lateral PN arrayed digital x-ray image sensor
- Patent number 6,172,370
- Issue date Jan 9, 2001
- Industrial Technology Research Institute
- Chungpin Liao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High voltage transistors and thyristors
- Patent number 6,162,665
- Issue date Dec 19, 2000
- IXYS Corporation
- Nathan Zommer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Local penetrating proton beam transmutation doping method for silicon
- Patent number 6,114,225
- Issue date Sep 5, 2000
- Industrial Technology Research Institute
- Chungpin Liao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Location selective transmutation doping on silicon wafers using hig...
- Patent number 6,100,168
- Issue date Aug 8, 2000
- Industrial Technology Research Institute
- Chungpin Liao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lateral PN arrayed digital X-ray image sensor
- Patent number 6,027,953
- Issue date Feb 22, 2000
- Industrial Technology Research Institute
- Chungpin Liao
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
PHOTONUCLEAR TRANSMUTATION DOPING IN GALLIUM-BASED SEMICONDUCTOR MA...
- Publication number 20200402802
- Publication date Dec 24, 2020
- THE CURATORS OF THE UNIVERSITY OF MISSOURI
- Jae Wan Kwon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOW DEFECT NUCLEAR TRANSMUTATION DOPING IN NITRIDE-BASED SEMICONDUC...
- Publication number 20200365406
- Publication date Nov 19, 2020
- THE CURATORS OF THE UNIVERSITY OF MISSOURI
- Jae Wan Kwon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Low Resistant Contact Method and Structure
- Publication number 20200119152
- Publication date Apr 16, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yu-Sheng Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
APPARATUS AND METHOD FOR NEUTRON TRANSMUTATION DOPING OF SEMICONDUC...
- Publication number 20200005957
- Publication date Jan 2, 2020
- INFINEON TECHNOLOGIES AG
- Markus BINA
- C30 - CRYSTAL GROWTH
Information Patent Application
APPARATUS AND METHOD FOR NEUTRON TRANSMUTATION DOPING OF SEMICONDUC...
- Publication number 20180308698
- Publication date Oct 25, 2018
- INFINEON TECHNOLOGIES AG
- Markus Bina
- G21 - NUCLEAR PHYSICS NUCLEAR ENGINEERING
Information Patent Application
SEMICONDUCTOR DEVICE MANUFACTURING METHOD
- Publication number 20140315359
- Publication date Oct 23, 2014
- Rohm Co., Ltd.
- Toshio Nakajima
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20130032896
- Publication date Feb 7, 2013
- Rohm Co., Ltd.
- Toshio Nakajima
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON SINGLE CRYSTAL WAFER FOR IGBT AND METHOD FOR MANUFACTURING...
- Publication number 20100288184
- Publication date Nov 18, 2010
- Toshiaki ONO
- C30 - CRYSTAL GROWTH
Information Patent Application
SILICON WAFER AND METHOD FOR PRODUCING THE SAME
- Publication number 20100052103
- Publication date Mar 4, 2010
- SUMCO CORPORATION
- Shigeru Umeno
- C30 - CRYSTAL GROWTH
Information Patent Application
SILICON WAFER AND METHOD FOR PRODUCING THE SAME
- Publication number 20100051945
- Publication date Mar 4, 2010
- SUMCO CORPORATION
- Shigeru Umeno
- C30 - CRYSTAL GROWTH
Information Patent Application
SEMICONDUCTOR DEVICE WITH A SEMICONDUCTOR BODY AND METHOD FOR ITS P...
- Publication number 20090261379
- Publication date Oct 22, 2009
- Infineon Technologies Austria AG
- Elmar FALCK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Silicon single crystal wafer for IGBT and method for manufacturing...
- Publication number 20070193501
- Publication date Aug 23, 2007
- SUMCO CORPORATION
- Toshiaki Ono
- C30 - CRYSTAL GROWTH
Information Patent Application
Manufacturing method of silicon wafer
- Publication number 20050229842
- Publication date Oct 20, 2005
- Shigeru Umeno
- C30 - CRYSTAL GROWTH
Information Patent Application
Electron device which controls quantum chaos and quantum chaos cont...
- Publication number 20050156160
- Publication date Jul 21, 2005
- Ryuichi Ugajin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Electron device which controls quantum chaos and quantum chaos cont...
- Publication number 20040201010
- Publication date Oct 14, 2004
- Ryuichi Ugajin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor component with enhanced avalanche resistance
- Publication number 20030155610
- Publication date Aug 21, 2003
- Andreas Schlogl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for doping Gallium Nitride (GaN) substrates and the resultin...
- Publication number 20030134493
- Publication date Jul 17, 2003
- Hak Dong Cho
- H01 - BASIC ELECTRIC ELEMENTS

to produce a nuclear reaction transmuting chemical elements

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Photonuclear transmutation doping in gallium-based semiconductor ma...

Low defect nuclear transmutation doping in nitride-based semiconduc...

Apparatus and method for neutron transmutation doping of semiconduc...

Low resistance contact method and structure

Apparatus and method for neutron transmutation doping of semiconduc...

Methods of doping semiconductor materials and metastable doped semi...

Semiconductor and other materials by thermal neutron transmutation

Method for postdoping a semiconductor wafer

Semiconductor device manufacturing method

Method for postdoping a semiconductor wafer

Semiconductor device manufacturing method

Semiconductor device and manufacturing method thereof

Silicon single crystal wafer for IGBT and method for manufacturing...

Silicon wafer and method for producing the same

Doping of semiconductor materials by nuclear transmutation

Semiconductor device with a semiconductor body and method for its p...

Doping wide band gap semiconductors

Manufacturing method of silicon wafer

Electron device which controls quantum chaos and quantum chaos cont...

Semiconductor component with enhanced avalanche ruggedness

Method of making a semiconductor wafer having a depletable multiple...

Universal semiconductor wafer for high-voltage semiconductor compon...

Power MOSFET and IGBT with optimized on-resistance and breakdown vo...

Manufacturing method of semiconductor device

Method of making power MOSFET and IGBT with optimized on-resistance...

Lateral PN arrayed digital x-ray image sensor

High voltage transistors and thyristors

Local penetrating proton beam transmutation doping method for silicon

Location selective transmutation doping on silicon wafers using hig...

Lateral PN arrayed digital X-ray image sensor

Patents Applicationslast 30 patents

PHOTONUCLEAR TRANSMUTATION DOPING IN GALLIUM-BASED SEMICONDUCTOR MA...

LOW DEFECT NUCLEAR TRANSMUTATION DOPING IN NITRIDE-BASED SEMICONDUC...

Low Resistant Contact Method and Structure

APPARATUS AND METHOD FOR NEUTRON TRANSMUTATION DOPING OF SEMICONDUC...

APPARATUS AND METHOD FOR NEUTRON TRANSMUTATION DOPING OF SEMICONDUC...

SEMICONDUCTOR DEVICE MANUFACTURING METHOD

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

SILICON SINGLE CRYSTAL WAFER FOR IGBT AND METHOD FOR MANUFACTURING...

SILICON WAFER AND METHOD FOR PRODUCING THE SAME

SILICON WAFER AND METHOD FOR PRODUCING THE SAME

SEMICONDUCTOR DEVICE WITH A SEMICONDUCTOR BODY AND METHOD FOR ITS P...

Silicon single crystal wafer for IGBT and method for manufacturing...

Manufacturing method of silicon wafer

Electron device which controls quantum chaos and quantum chaos cont...

Electron device which controls quantum chaos and quantum chaos cont...

Semiconductor component with enhanced avalanche resistance

Method for doping Gallium Nitride (GaN) substrates and the resultin...