Transformation of metal

Industry

CPC
H01L21/02614

This industry / category may be too specific. Please go to a parent level for more data

Parent Industries

HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

Current Industry

H01L21/02614Transformation of metal

Industries

Please log in for detailed analytics

Patents Grantslast 30 patents

Information Patent Grant
FinFET devices and methods of forming the same
- Patent number 12,148,673
- Issue date Nov 19, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chih-Hao Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Thin film transistor, method for manufacturing the same, and semico...
- Patent number 12,136,629
- Issue date Nov 5, 2024
- Semiconductor Energy Laboratory Co., Ltd.
- Toshikazu Kondo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit device and method for forming the same
- Patent number 12,062,540
- Issue date Aug 13, 2024
- TAIWAN SEMICONDUCTOR MANUFACTURING LTD.
- Ya-Ting Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ni(Al)O p-type semiconductor via selective oxidation of NiAl and me...
- Patent number 12,021,137
- Issue date Jun 25, 2024
- Taiwan Semiconductor Manufacturing Company Limited
- Oreste Madia
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with carbon-density-decreasing region
- Patent number 11,996,449
- Issue date May 28, 2024
- Rohm Co., Ltd.
- Tsunenobu Kimoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Cuprous oxide devices and formation methods
- Patent number 11,984,315
- Issue date May 14, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Marcus Johannes Henricus van Dal
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming oxide layer on a doped substrate using nitridatio...
- Patent number 11,862,461
- Issue date Jan 2, 2024
- CHANGXIN MEMORY TECHNOLOGIES, INC.
- Tzung-Han Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET devices and methods of forming the same
- Patent number 11,837,506
- Issue date Dec 5, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chih-Hao Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Thin film transistor, method for manufacturing the same, and semico...
- Patent number 11,824,062
- Issue date Nov 21, 2023
- Semiconductor Energy Laboratory Co., Ltd.
- Toshikazu Kondo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Heterojunction material and method of preparing the same
- Patent number 11,735,417
- Issue date Aug 22, 2023
- Research & Business Foundation Sungkyunkwan University
- Taesung Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Systems and methods for nitride-containing film removal
- Patent number 11,728,177
- Issue date Aug 15, 2023
- Applied Materials, Inc.
- Baiwei Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods and apparatus for metal silicide deposition
- Patent number 11,615,986
- Issue date Mar 28, 2023
- Applied Materials, Inc.
- Xuebin Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for manufacturing the semiconductor...
- Patent number 11,600,489
- Issue date Mar 7, 2023
- Semiconductor Energy Laboratory Co., Ltd.
- Shunpei Yamazaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Photonuclear transmutation doping in gallium-based semiconductor ma...
- Patent number 11,551,932
- Issue date Jan 10, 2023
- The Curators of the University of Missouri
- Jae Wan Kwon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor structures including a non-planar body having variable a...
- Patent number 11,532,619
- Issue date Dec 20, 2022
- Intel Corporation
- Willy Rachmady
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Selectively etching for nanowires
- Patent number 11,521,860
- Issue date Dec 6, 2022
- Lam Research Corporation
- Jun Xue
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with carbon-density-decreasing region
- Patent number 11,502,172
- Issue date Nov 15, 2022
- Rohm Co., Ltd.
- Tsunenobu Kimoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Systems and methods for tungsten-containing film removal
- Patent number 11,488,835
- Issue date Nov 1, 2022
- Applied Materials, Inc.
- Zhenjiang Cui
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field-effect transistors having transition metal dichalcogenide cha...
- Patent number 11,410,996
- Issue date Aug 9, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yee-Chia Yeo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integration of graphene and boron nitride hetero-structure device o...
- Patent number 11,296,237
- Issue date Apr 5, 2022
- Texas Instruments Incorporated
- Archana Venugopal
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Direct formation of hexagonal boron nitride on silicon based dielec...
- Patent number 11,289,577
- Issue date Mar 29, 2022
- GlobalWafers Co., Ltd.
- Vikas Berry
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuits and methods for forming thin film crystal layers
- Patent number 11,276,644
- Issue date Mar 15, 2022
- Intel Corporation
- Carl Naylor
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Direct formation of hexagonal boron nitride on silicon based dielec...
- Patent number 11,276,759
- Issue date Mar 15, 2022
- GlobalWafers Co., Ltd.
- Vikas Berry
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Cap oxidation for FinFET formation
- Patent number 11,271,097
- Issue date Mar 8, 2022
- Applied Materials, Inc.
- Steven C. Hung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabrication of copper-indium gallium oxide and chalcogen...
- Patent number 11,271,124
- Issue date Mar 8, 2022
- The Government of the United States of America, as represented by the Secreta...
- Walter J. Dressick
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Device comprising 2D material
- Patent number 11,251,307
- Issue date Feb 15, 2022
- Samsung Electronics Co., Ltd.
- Tae-jin Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacturing the same
- Patent number 11,239,353
- Issue date Feb 1, 2022
- Electronics and Telecommunications Research Institute
- Sun Jin Yun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Patterned lumiramic for improved PCLED stability
- Patent number 11,217,734
- Issue date Jan 4, 2022
- Lumileds LLC
- Kentaro Shimizu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
2D crystal hetero-structures and manufacturing methods thereof
- Patent number 11,211,460
- Issue date Dec 28, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd
- Shih-Yen Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure and formation method of semiconductor device with stressor
- Patent number 11,201,225
- Issue date Dec 14, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd
- Kuo-Cheng Chiang
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
LAMINATE AND METHOD FOR MANUFACTURING SAME
- Publication number 20240401184
- Publication date Dec 5, 2024
- TOSOH CORPORATION
- Yuya SUEMOTO
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
FINFET DEVICES AND METHODS OF FORMING THE SAME
- Publication number 20240387287
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chih-Hao Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT DEVICE
- Publication number 20240355622
- Publication date Oct 24, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ya-Ting CHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND METHOD OF SEPARAT...
- Publication number 20240297078
- Publication date Sep 5, 2024
- KIOXIA Corporation
- Mariko SUMIYA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CUPROUS OXIDE DEVICES AND FORMATION METHODS
- Publication number 20240297037
- Publication date Sep 5, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Marcus Johannes Henricus van Dal
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH CARBON-DENSITY-DECREASING REGION
- Publication number 20240258380
- Publication date Aug 1, 2024
- ROHM CO., LTD.
- Tsunenobu KIMOTO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THIN FILM TRANSISTOR, METHOD FOR MANUFACTURING THE SAME, AND SEMICO...
- Publication number 20240162234
- Publication date May 16, 2024
- SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
- Toshikazu Kondo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FINFET DEVICES AND METHODS OF FORMING THE SAME
- Publication number 20230411218
- Publication date Dec 21, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chih-Hao Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD
- Publication number 20230282739
- Publication date Sep 7, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Po-Hsun Ho
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SEMICONDUCTOR...
- Publication number 20230274935
- Publication date Aug 31, 2023
- Semiconductor Energy Laboratory Co., Ltd.
- Shunpei YAMAZAKI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GERMANIUM TIN OXIDE-CONTAINING SEMICONDUCTOR DEVICE AND METHODS FOR...
- Publication number 20230261060
- Publication date Aug 17, 2023
- Taiwan Semiconductor Manufacturing Company Limited
- Georgios Vellianitis
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF GROWING MONOLAYER TRANSITION METAL DICHALCOGENIDES VIA SU...
- Publication number 20230243030
- Publication date Aug 3, 2023
- Agency for Science, Technology and Research
- Henry Medina Silva
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
METHOD OF FORMING PN JUNCTION INCLUDING TRANSITION METAL DICHALCOGE...
- Publication number 20230245887
- Publication date Aug 3, 2023
- Samsung Electronics Co., Ltd.
- Sang-Yong PARK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING GERMANIUM ANTIMONY TELLURIUM FILM
- Publication number 20230230832
- Publication date Jul 20, 2023
- INDUSTRY ACADEMY COOPERATION FOUNDATION OF SEJONG UNIVERSITY
- Donggeon GU
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING SEMICONDUCTOR STRUCTURE
- Publication number 20230207315
- Publication date Jun 29, 2023
- CHANGXIN MEMORY TECHNOLOGIES, INC
- TZUNG-HAN LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONFORMAL METAL DICHALCOGENIDES
- Publication number 20230207314
- Publication date Jun 29, 2023
- Applied Materials, Inc.
- Chandan Das
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Ni(Al)O P-TYPE SEMICONDUCTOR VIA SELECTIVE OXIDATION OF NiAl AND ME...
- Publication number 20230029647
- Publication date Feb 2, 2023
- Taiwan Semiconductor Manufacturing Company Limited
- Oreste MADIA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME
- Publication number 20230019556
- Publication date Jan 19, 2023
- ROHM CO., LTD.
- Tsunenobu KIMOTO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT DEVICE AND METHOD FOR FORMING THE SAME
- Publication number 20230009266
- Publication date Jan 12, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ya-Ting CHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR PRODUCING PILLAR-SHAPED SEMICONDUCTOR DEVICE
- Publication number 20220415662
- Publication date Dec 29, 2022
- Unisantis Electronics Singapore PTE Ltd.
- Nozomu HARADA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOW DEFECT, HIGH MOBILITY THIN FILM TRANSISTORS WITH IN-SITU DOPED...
- Publication number 20220359759
- Publication date Nov 10, 2022
- Intel Corporation
- Chieh-Jen Ku
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Field-Effect Transistors Having Transition Metal Dichalcogenide Cha...
- Publication number 20220344330
- Publication date Oct 27, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Yee-Chia Yeo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FABRICATION OF COPPER-INDIUM GALLIUM OXIDE AND CHALCOGEN...
- Publication number 20220190173
- Publication date Jun 16, 2022
- The Government of the United States of America, as represented by the Secreta...
- Walter J. Dressick
- Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMA...
Information Patent Application
METHOD FOR PREPARING A SUBSTRATE
- Publication number 20220108890
- Publication date Apr 7, 2022
- ENKRIS SEMICONDUCTOR, INC.
- Liyang ZHANG
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
METHODS AND APPARATUS FOR METAL SILICIDE DEPOSITION
- Publication number 20220005705
- Publication date Jan 6, 2022
- Applied Materials, Inc.
- Xuebin LI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS AND APPARATUS FOR METAL SILICIDE DEPOSITION
- Publication number 20220005704
- Publication date Jan 6, 2022
- Applied Materials, Inc.
- Xuebin LI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
High Pressure Oxidation of Metal Films
- Publication number 20210404046
- Publication date Dec 30, 2021
- Applied Materials, Inc.
- Amrita B. Mullick
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HETEROJUNCTION METERIAL AND METHOD OF PREPARING THE SAME
- Publication number 20210366708
- Publication date Nov 25, 2021
- Research & Business Foundation Sungkyunkwan University
- Taesung KIM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THIN FILM TRANSISTOR, METHOD FOR MANUFACTURING THE SAME, AND SEMICO...
- Publication number 20210351206
- Publication date Nov 11, 2021
- Semiconductor Energy Laboratory Co., Ltd.
- Toshikazu Kondo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELECTIVELY ETCHING FOR NANOWIRES
- Publication number 20210335626
- Publication date Oct 28, 2021
- LAM RESEARCH CORPORATION
- Jun XUE
- H01 - BASIC ELECTRIC ELEMENTS

Transformation of metal

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

FinFET devices and methods of forming the same

Thin film transistor, method for manufacturing the same, and semico...

Integrated circuit device and method for forming the same

Ni(Al)O p-type semiconductor via selective oxidation of NiAl and me...

Semiconductor device with carbon-density-decreasing region

Cuprous oxide devices and formation methods

Method of forming oxide layer on a doped substrate using nitridatio...

FinFET devices and methods of forming the same

Thin film transistor, method for manufacturing the same, and semico...

Heterojunction material and method of preparing the same

Systems and methods for nitride-containing film removal

Methods and apparatus for metal silicide deposition

Semiconductor device and method for manufacturing the semiconductor...

Photonuclear transmutation doping in gallium-based semiconductor ma...

Transistor structures including a non-planar body having variable a...

Selectively etching for nanowires

Semiconductor device with carbon-density-decreasing region

Systems and methods for tungsten-containing film removal

Field-effect transistors having transition metal dichalcogenide cha...

Integration of graphene and boron nitride hetero-structure device o...

Direct formation of hexagonal boron nitride on silicon based dielec...

Integrated circuits and methods for forming thin film crystal layers

Direct formation of hexagonal boron nitride on silicon based dielec...

Cap oxidation for FinFET formation

Method for fabrication of copper-indium gallium oxide and chalcogen...

Device comprising 2D material

Semiconductor device and method of manufacturing the same

Patterned lumiramic for improved PCLED stability

2D crystal hetero-structures and manufacturing methods thereof

Structure and formation method of semiconductor device with stressor

Patents Applicationslast 30 patents

LAMINATE AND METHOD FOR MANUFACTURING SAME

FINFET DEVICES AND METHODS OF FORMING THE SAME

INTEGRATED CIRCUIT DEVICE

METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND METHOD OF SEPARAT...

CUPROUS OXIDE DEVICES AND FORMATION METHODS

SEMICONDUCTOR DEVICE WITH CARBON-DENSITY-DECREASING REGION

THIN FILM TRANSISTOR, METHOD FOR MANUFACTURING THE SAME, AND SEMICO...

FINFET DEVICES AND METHODS OF FORMING THE SAME

SEMICONDUCTOR DEVICE AND METHOD

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SEMICONDUCTOR...

GERMANIUM TIN OXIDE-CONTAINING SEMICONDUCTOR DEVICE AND METHODS FOR...

METHOD OF GROWING MONOLAYER TRANSITION METAL DICHALCOGENIDES VIA SU...

METHOD OF FORMING PN JUNCTION INCLUDING TRANSITION METAL DICHALCOGE...

METHOD OF FORMING GERMANIUM ANTIMONY TELLURIUM FILM

SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING SEMICONDUCTOR STRUCTURE

CONFORMAL METAL DICHALCOGENIDES

Ni(Al)O P-TYPE SEMICONDUCTOR VIA SELECTIVE OXIDATION OF NiAl AND ME...

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME

INTEGRATED CIRCUIT DEVICE AND METHOD FOR FORMING THE SAME

METHOD FOR PRODUCING PILLAR-SHAPED SEMICONDUCTOR DEVICE

LOW DEFECT, HIGH MOBILITY THIN FILM TRANSISTORS WITH IN-SITU DOPED...

Field-Effect Transistors Having Transition Metal Dichalcogenide Cha...

METHOD FOR FABRICATION OF COPPER-INDIUM GALLIUM OXIDE AND CHALCOGEN...

METHOD FOR PREPARING A SUBSTRATE

METHODS AND APPARATUS FOR METAL SILICIDE DEPOSITION

METHODS AND APPARATUS FOR METAL SILICIDE DEPOSITION

High Pressure Oxidation of Metal Films

HETEROJUNCTION METERIAL AND METHOD OF PREPARING THE SAME

THIN FILM TRANSISTOR, METHOD FOR MANUFACTURING THE SAME, AND SEMICO...

SELECTIVELY ETCHING FOR NANOWIRES