Patent Grant
11824062
The present invention relates to a thin film transistor formed using an oxide semiconductor layer, and a method for manufacturing the thin film transistor. In addition, the present invention relates to a semiconductor device manufactured using the thin film transistor.
Note that a semiconductor device in this specification indicates all the devices that can operate by using semiconductor characteristics, and electro-optical devices, semiconductor circuits, and electronic appliances are all included in the category of the semiconductor devices.
A wide variety of metal oxides exist and are used for various applications. Indium oxide is a well-known material and is used as a transparent electrode material needed for a liquid crystal display and the like.
Some metal oxides exhibit semiconductor characteristics. As metal oxides exhibiting semiconductor characteristics, for example, tungsten oxide, tin oxide, indium oxide, zinc oxide, and the like can be given. References disclose a thin film transistor in which such a metal oxide exhibiting semiconductor characteristics is used for a channel formation region (Patent Documents 1 to 4, and Non-Patent Document 1).
As metal oxides, multi-component oxides as well as single-component oxides are known. For example, InGaO3(ZnO)m (m is a natural number) belonging to homologous series has been known as a multi-component oxide semiconductor including In, Ga, and Zn (Non-Patent Documents 2 to 4).
In addition, it has been confirmed that an oxide semiconductor including such an In—Ga—Zn-based oxide can be used as a channel layer of a thin film transistor (Patent Document 5, and Non-Patent Documents 5 and 6).
An object of an embodiment of the present invention is to prevent, in a thin film transistor, an increase in off current or negative shift of the threshold voltage.
An object of an embodiment of the present invention is to realize ohmic contact between an oxide semiconductor layer and each of a source electrode layer and a drain electrode layer of a thin film transistor.
An object of an embodiment of the present invention is to efficiently manufacture a high-performance thin film transistor in which an increase in off current or negative shift of the threshold voltage is prevented.
An object of an embodiment of the present invention is to efficiently manufacture a high-performance thin film transistor in which an increase in off current or negative shift of the threshold voltage is prevented and which has ohmic contact between an oxide semiconductor layer and each of a source electrode layer and a drain electrode layer.
An object of an embodiment of the present invention is to provide a semiconductor device with high performance or high reliability.
An embodiment of the present invention is an inverted staggered thin film transistor in which a buffer layer is provided over an oxide semiconductor layer and a source electrode layer and a drain electrode layer are provided over the buffer layer. Note that the buffer layer includes a pair of conductive layers provided over opposite end portions of the oxide semiconductor layer, and a metal oxide layer which is provided over a middle portion of the oxide semiconductor layer, has the same metal element as the pair of conductive layers, has higher oxygen concentration than the pair of conductive layers, and is an insulator or a semiconductor provided between the pair of conductive layers.
Another embodiment of the present invention is a thin film transistor which has the above structure and in which the buffer layer includes a pair of oxide semiconductor layers whose oxygen concentration is lowered and which are provided over opposite end portions of the oxide semiconductor layer, and a pair of conductive layers containing oxygen at high concentration and provided over the pair of oxide semiconductor layers whose oxygen concentration is lowered.
Note that in this specification, the term “insulator” means a substance whose electrical resistivity is greater than or equal to 106 (Ω·m), the term “semiconductor” means a substance whose electrical resistivity is greater than or equal to 10−3 (Ω·m) and less than 106 (Ω·m), and the term “conductor” means a substance whose electrical resistivity is less than 10−3 (Ω·m).
Another embodiment of the present invention is a method for manufacturing a thin film transistor in which a metal oxide layer is formed by performing oxidation treatment on a conductive layer formed in the same step as an oxide semiconductor layer. Note that in the oxidation treatment, a resist used for forming a source electrode layer and a drain electrode layer is used as a mask. Therefore, opposite end portions of the conductive layer remain without being oxidized by the oxidation treatment. As a result, through the oxidation treatment, a pair of conductive layers and a metal oxide layer provided between the pair of conductive layers are formed.
Another embodiment of the present invention is a method for manufacturing a thin film transistor in which a metal oxide layer is formed by performing oxidation treatment on a conductive layer formed in the same step as an oxide semiconductor layer, and then, a pair of conductive layers containing oxygen at high concentration and a pair of oxide semiconductor layers whose oxygen concentration is lowered are formed by diffusing oxygen through thermal treatment.
Another embodiment of the present invention is a method for manufacturing a thin film transistor in which a metal oxide layer, a pair of conductive layers containing oxygen at high concentration, and a pair of oxide semiconductor layers whose oxygen concentration is lowered are formed through thermal oxidation treatment.
Another embodiment of the present invention is a method for manufacturing a thin film transistor in which a metal oxide layer, a pair of conductive layers containing oxygen at high concentration, and a pair of oxide semiconductor layers whose oxygen concentration is lowered are formed through oxidation treatment and thermal oxidation treatment.
Another embodiment of the present invention is a semiconductor device including the thin film transistor, and an interlayer insulating layer provided over the thin film transistor.
An embodiment of the present invention is an inverted staggered thin film transistor including a metal oxide layer which is an insulator or a semiconductor over a middle portion of an oxide semiconductor layer. The metal oxide layer functions as a protective layer for suppressing incorporation of impurities (such as hydrogen and moisture) into the oxide semiconductor layer. Therefore, in the thin film transistor, an increase in off current or negative shift of the threshold voltage can be prevented.
Another embodiment of the present invention is an inverted staggered thin film transistor including a pair of conductive layers containing oxygen at high concentration and a pair of oxide semiconductor layers whose oxygen concentration is lowered, between opposite end portions of an oxide semiconductor layer and a pair of conductive layers provided over the opposite end portions of the oxide semiconductor layer. The pair of oxide semiconductor layers whose oxygen concentration is lowered has lower resistance than the oxide semiconductor layer. Therefore, ohmic contact between the oxide semiconductor layer and each of a source electrode layer and a drain electrode layer can be obtained.
In another embodiment of the present invention, the metal oxide layer is formed on the basis of a conductive layer which is formed in the same step as the oxide semiconductor layer. Therefore, a high-performance thin film transistor can be efficiently formed.
In another embodiment of the present invention, the metal oxide layer is formed on the basis of a conductive layer which is formed in the same step as the oxide semiconductor layer, and the pair of oxide semiconductor layers whose oxygen concentration is lowered is formed by diffusing oxygen into the conductive layer. Therefore, a high-performance thin film transistor can be efficiently formed.
In another embodiment of the present invention, a thin film transistor including a protective layer for suppressing incorporation of impurities (such as hydrogen and moisture) into an oxide semiconductor layer is applied to a thin film transistor included in a semiconductor device. Accordingly, a material and a manufacturing method of an interlayer insulating layer provided over the thin film transistor can be selected depending on the purpose. That is, a semiconductor device with high performance or high reliability can be provided.
Embodiments and an example of the present invention will be hereinafter described in detail with reference to the accompanying drawings. However, the present invention is not limited to the description below, and those skilled in the art will appreciate that a variety of modifications can be made to the modes and details without departing from the spirit and scope of the present invention. Therefore, the present invention is not construed as being limited to description of embodiments and an example below.
Note that the size, the thickness of a layer, or a region of each structure illustrated in drawings or the like in embodiments is exaggerated for simplicity in some cases. Therefore, the scale is not necessarily limited to that illustrated in the drawings or the like. Further, in this specification, ordinal numbers such as “first”, “second”, and “third” are used in order to avoid confusion among components, and the terms do not limit the components numerically.
In this embodiment, a structure of a thin film transistor which is one embodiment of the present invention will be described with reference to
In other words, the thin film transistor 150 in
In other words, the thin film transistor 151 in
As the substrate 100, a glass substrate such as barium borosilicate glass or aluminoborosilicate glass or the like can be used.
As the gate electrode layer 101, an element selected from aluminum (Al), copper (Cu), titanium (Ti), tantalum (Ta), tungsten (W), molybdenum (Mo), chromium (Cr), neodymium (Nd), and scandium (Sc), an alloy containing any of these elements, or a nitride containing any of these elements can be used. A stacked structure of these materials can also be used.
As the gate insulating layer 102, an insulator such as silicon oxide, silicon nitride, silicon oxynitride, silicon nitride oxide, aluminum oxide, or tantalum oxide can be used. Alternatively, a stacked structure of these insulators can be used. Note that silicon oxynitride refers to a substance which contains more oxygen than nitrogen and contains oxygen, nitrogen, silicon, and hydrogen at given concentrations ranging from 55 atomic % to 65 atomic %, 1 atomic % to 20 atomic %, 25 atomic % to 35 atomic %, and 0.1 atomic % to 10 atomic %, respectively, where the total percentage of atoms is 100 atomic %. Further, silicon nitride oxide refers to a substance which contains more nitrogen than oxygen and contains oxygen, nitrogen, silicon, and hydrogen at given concentrations ranging from 15 atomic % to 30 atomic %, 20 atomic % to 35 atomic %, 25 atomic % to 35 atomic %, and 15 atomic % to 25 atomic %, respectively, where the total percentage of atoms is 100 atomic %.
As the oxide semiconductor layer 103, an oxide semiconductor such as an In-Ga—Zn—O-based oxide semiconductor, an In—Sn—Zn—O-based oxide semiconductor, an In—Zn—O-based oxide semiconductor, a Sn—Zn—O-based oxide semiconductor, an In—Sn—O-based oxide semiconductor, a Ga—Zn—O-based oxide semiconductor, or a Zn—O-based oxide semiconductor can be used. Alternatively, an oxide semiconductor formed by adding nitrogen (N) or silicon (Si) to any of the above oxide semiconductors can be used. A stacked structure of these materials can also be used.
As the pair of conductive layers 104a and 104b, titanium (Ti), copper (Cu), zinc (Zn), aluminum (Al), or the like can be used. Alternatively, an alloy containing any of these metal elements can be used. A stacked structure of these materials can also be used.
As the metal oxide layer 105, the same material as the pair of conductive layers 104a and 104b can be used. Note that the metal oxide layer 105 has higher oxygen concentration than the pair of conductive layers 104a and 104b. That is, the metal oxide layer 105 contains the same metal element as the pair of conductive layers 104a and 104b, and has higher oxygen concentration than the pair of conductive layers 104a and 104b.
As the source electrode layer 107a and the drain electrode layer 107b, an element selected from aluminum (Al), copper (Cu), titanium (Ti), tantalum (Ta), tungsten (W), molybdenum (Mo), chromium (Cr), neodymium (Nd), and scandium (Sc), an alloy containing any of these elements, or a nitride containing any of these elements can be used. A stacked structure of these materials can also be used.
As the pair of oxide semiconductor layers 108a and 108b whose oxygen concentration is lowered, the same material as the oxide semiconductor layer 103 can be used. Note that the pair of oxide semiconductor layers 108a and 108b whose oxygen concentration is lowered has lower oxygen concentration than the oxide semiconductor layer 103. That is, the pair of oxide semiconductor layers 108a and 108b whose oxygen concentration is lowered contains the same metal element as the oxide semiconductor layer 103, and has lower oxygen concentration than the oxide semiconductor layer 103.
As the pair of conductive layers 109a and 109b containing oxygen at high concentration, the same material as the pair of conductive layers 104a and 104b and the metal oxide layer 105 can be used. Note that the pair of conductive layers 109a and 109b containing oxygen at high concentration has higher oxygen concentration than the pair of conductive layers 104a and 104b, and has lower oxygen concentration than the metal oxide layer 105. That is, the pair of conductive layers 109a and 109b containing oxygen at high concentration contains the same metal element as the pair of conductive layers 104a and 104b and the metal oxide layer 105, and has higher oxygen concentration than the pair of conductive layers 104a and 104b and lower oxygen concentration than the metal oxide layer 105.
The thin film transistor 150 in
The buffer layer 110 of the thin film transistor 151 in
In this embodiment, one example of a method for manufacturing the thin film transistor described in Embodiment 1 will be described with reference to
Note that in this embodiment, the term “film” means something which is formed over the entire surface of a substrate and is to be processed into a desired shape in a subsequent photolithography step or the like, and something before the processing. The term “layer” means something obtained by processing and shaping a “film” into a desired shape by a photolithography step or the like, or something to be formed over the entire surface of a substrate.
A first conductive film 201 is formed over a substrate 200. The first conductive film 201 can be formed by a thin film deposition method typified by a sputtering method, a vacuum evaporation method, a pulsed laser deposition method, an ion plating method, a metal organic chemical vapor deposition method, or the like. Next, a first resist 202 is formed over the first conductive film 201.
Next, with use of the first resist 202 as a mask, the first conductive film 201 is selectively etched to form a gate electrode layer 203. Note that the materials described in Embodiment 1 can be used for the substrate 200 and the first conductive film 201 (the gate electrode layer 203); therefore, here, the above description is to be referred to. The first resist 202 is removed after the gate electrode layer 203 is formed.
Next, a gate insulating layer 204 is formed over the substrate 200 and the gate electrode layer 203. The gate insulating layer 204 can be formed by a thin film deposition method typified by a sputtering method, a vacuum evaporation method, a pulsed laser deposition method, an ion plating method, a metal organic chemical vapor deposition method, a plasma CVD method, or the like.
Next, an oxide semiconductor film 205 is formed. The oxide semiconductor film 205 can be formed by a thin film deposition method typified by a sputtering method, a vacuum evaporation method, a pulsed laser deposition method, an ion plating method, a metal organic chemical vapor deposition method, or the like. In the case where an In-Ga—Zn—O-based oxide semiconductor film is formed by a sputtering method, it is preferable to use a target made by sintering In2O3, Ga2O3, and ZnO. As a sputtering gas, a rare gas typified by argon is used. One example of the formation conditions by sputtering is as follows: a target made by mixing and sintering In2O3, Ga2O3, and ZnO (1:1:1) is used; the pressure is 0.4 Pa; the direct current (DC) power source is 500 W; the flow rate of an argon gas is 30 sccm; and the flow rate of an oxygen gas is 15 sccm. After the oxide semiconductor film 205 is formed, thermal treatment is preferably performed at 100° C. to 600° C., typically 200° C. to 400° C. Through this thermal treatment, rearrangement at the atomic level occurs in the oxide semiconductor film. The thermal treatment (including optical annealing) is important because strain energy which inhibits carrier movement in the oxide semiconductor film 205 is released by the thermal treatment.
Next, a second conductive film 206 is formed over the oxide semiconductor film 205. The second conductive film 206 can be formed by a thin film deposition method typified by a sputtering method, a vacuum evaporation method, a pulsed laser deposition method, an ion plating method, a metal organic chemical vapor deposition method, or the like. As a material for the second conductive film 206, titanium (Ti), copper (Cu), zinc (Zn), aluminum (Al), or the like can be used. Alternatively, an alloy containing any of these metal elements can be used. A stacked structure of these materials can also be used. Next, a second resist 207 is formed over the second conductive film 206.
Next, with use of the second resist 207 as a mask, the oxide semiconductor film 205 and the second conductive film 206 are selectively etched to form an oxide semiconductor layer 208 and a conductive layer 209. Note that the materials described in Embodiment 1 can be used for the gate insulating layer 204 and the oxide semiconductor film 205 (the oxide semiconductor layer 208); therefore, here, the above description is to be referred to. The second resist 207 is removed after the oxide semiconductor layer 208 and the conductive layer 209 are formed.
Next, a third conductive film 210 is formed over the gate insulating layer 204 and the conductive layer 209. The third conductive film 210 can be formed by a thin film deposition method typified by a sputtering method, a vacuum evaporation method, a pulsed laser deposition method, an ion plating method, a metal organic chemical vapor deposition method, or the like. Next, third resists 211a and 211b are formed over the third conductive film 210.
Next, with use of the third resists 211a and 211b as masks, the third conductive film 210 is selectively etched to form a source electrode layer 212a and a drain electrode layer 212b. Note that through this etching step, a region (an exposed portion) of the conductive layer 209, which does not overlap with the source electrode layer 212a or the drain electrode layer 212b, is partly etched, whereby a conductive layer 213 having a recessed portion in the region (the exposed portion), which does not overlap with the source electrode layer 212a or the drain electrode layer 212b, is formed. Note that the materials described in Embodiment 1 can be used for the third conductive film 210 (the source electrode layer 212a and the drain electrode layer 212b); therefore, here, the above description is to be referred to.
Next, with use of the third resists 211a and 211b as masks, oxidation treatment is performed. As the oxidation treatment, thermal oxidation treatment in an oxidizing atmosphere, plasma oxidation treatment, oxygen ion implantation, or the like can be used. It is possible to perform plural kinds of such treatment in combination; for example, thermal oxidation treatment in an oxidizing atmosphere is performed, and then, plasma oxidation treatment is performed. Note that as the oxidizing atmosphere in which the thermal oxidation treatment is performed, a dried oxygen atmosphere, a mixed atmosphere of oxygen and a rare gas, an atmospheric atmosphere, or the like can be used. Through the oxidation treatment, a middle portion (an exposed portion) of the conductive layer 213 provided over the oxide semiconductor layer 208 is oxidized to form a metal oxide layer 214 which is an insulator or a semiconductor. Further, at the same time as the formation of the metal oxide layer 214, a pair of conductive layers 215a and 215b is formed over opposite end portions of the oxide semiconductor layer 208. Specifically, by the source electrode layer 212a, the drain electrode layer 212b, and the third resists 211a and 211b, a region (a non-exposed portion) of the conductive layer 213, which overlaps with the source electrode layer 212a or the drain electrode layer 212b, is prevented from being oxidized. As a result, the pair of conductive layers 215a and 215b remains. Note that the volume of the region oxidized through the oxidation treatment is increased. That is, the volume of the metal oxide layer 214 is larger than that of the middle portion of the conductive layer 213 before being oxidized.
Note that the thin film transistor of this embodiment is not limited to have the structure of
The thin film transistor in which the thickness of the metal oxide layer 214 formed through the oxidation treatment is larger than that of the pair of conductive layers 215a and 215b is illustrated in
In the case where the thin film transistor 151 in
Here, the manufacturing step in which thermal treatment performed in the case where the thin film transistor 151 in
In terms of characteristics of a thin film transistor to be formed, thermal treatment is preferably performed after oxidation treatment. This is because when thermal treatment is performed before oxidation treatment (before formation of the metal oxide layer 214), oxide semiconductor layers whose oxygen concentration is lowered are formed not only in upper portions of the opposite end portions of the oxide semiconductor layer 208 but also over the entire area of the oxide semiconductor layer 208; thus, off current of a thin film transistor to be formed is increased.
In addition, in terms of a manufacturing process, as the oxidation treatment, thermal oxidation treatment is preferably performed in an oxidizing atmosphere at a temperature at which the pair of oxide semiconductor layers 216a and 216b whose oxygen concentration is lowered and the pair of conductive layers 217a and 217b containing oxygen at high concentration are formed. This is because the metal oxide layer 214, the pair of oxide semiconductor layers 216a and 216b whose oxygen concentration is lowered, and the pair of conductive layers 217a and 217b containing oxygen at high concentration can be formed in the same step. One example of conditions for treatment serving as the oxidation treatment and the thermal treatment is thermal oxidation treatment at 350° C. for one hour in a dried oxygen atmosphere.
Further, in terms of reliability of a thin film transistor to be formed, thermal oxidation treatment and oxidation treatment are preferably performed in combination. When the thickness of the metal oxide layer 214 is made larger, a function as a protective layer for suppressing incorporation of impurities (such as hydrogen and moisture) into the oxide semiconductor layer 208 can be improved.
In the thin film transistor 150, the metal oxide layer 214 having a function of preventing an increase in off current or negative shift of the threshold voltage is formed on the basis of the conductive layer 209 (the conductive layer 213) which is formed in the same step as the oxide semiconductor layer 208; therefore, a high-performance thin film transistor can be efficiently formed. In a similar manner, in the thin film transistor 151, the metal oxide layer 214 having a function of preventing an increase in off current or negative shift of the threshold voltage is formed on the basis of the conductive layer 209 (the conductive layer 213) which is formed in the same step as the oxide semiconductor layer 208, and the pair of oxide semiconductor layers 216a and 216b whose oxygen concentration is lowered and which have a function of realizing ohmic contact between the oxide semiconductor layer 208 and each of the source electrode layer 212a and the drain electrode layer 212b is formed by diffusing oxygen into the pair of conductive layers 215a and 215b; therefore, a high-performance thin film transistor can be efficiently formed.
In this embodiment, one example of a semiconductor device in which the thin film transistor described in Embodiment 1 is used will be described. Specifically, a liquid crystal display device in which the thin film transistor is used as a thin film transistor provided in a pixel portion of an active matrix substrate will be described with reference to
Note that in a semiconductor device, since a source and a drain of a thin film transistor are switched with each other depending on the operating condition or the like, it is difficult to determine which is the source or the drain. Therefore, in this embodiment and the following embodiments, one of a source electrode layer and a drain electrode layer is referred to as a first electrode layer and the other thereof is referred to as a second electrode layer for distinction.
The materials described in Embodiment 1 and the manufacturing method described in Embodiment 2 can be applied to the substrate 400, the gate electrode layer 401, the gate insulating layer 402, the oxide semiconductor layer 403, the conductive layer 404a, the conductive layer 404b, the metal oxide layer 405, the buffer layer 406, the first electrode layer 407a, and the second electrode layer 407b; therefore, here, the above description is to be referred to.
The sub-pixel includes a capacitor 451. The capacitor 451 includes a capacitor wiring 408 formed from the same material as the gate electrode layer 401 of the thin film transistor 450, the gate insulating layer 402, and the second electrode layer 407b of the thin film transistor 450, which extends to the sub-pixel.
An interlayer insulating layer 409 is provided over the thin film transistor 450 and the capacitor 451. The thin film transistor 450 in
A liquid crystal display device includes a liquid crystal layer provided between an active matrix substrate and a counter substrate provided with a counter electrode on its surface. Alignment of liquid crystal molecules included in the liquid crystal layer is controlled by voltage applied between a pixel electrode of the active matrix substrate and the counter electrode of the counter substrate. The liquid crystal molecules of the liquid crystal layer are aligned to transmit or block light emitted from a backlight, whereby the liquid crystal display device can display images. In the liquid crystal display device, a thin film transistor in a pixel portion of the active matrix substrate is a switching element which controls voltage applied to the liquid crystal layer.
In the liquid crystal display device of this embodiment, the thin film transistor 450 in which the metal oxide layer 405 is provided over the oxide semiconductor layer 403 is used as a thin film transistor in a pixel portion of an active matrix substrate. The metal oxide layer 405 functions as a protective layer for suppressing incorporation of impurities (such as hydrogen and moisture) into the oxide semiconductor layer 403. Therefore, the material and manufacturing method of the interlayer insulating layer 409 can be selected depending on the purpose. As a result, a liquid crystal display device with high performance or high reliability can be provided. Note that the liquid crystal display device to which the thin film transistor in
In this embodiment, one example of a semiconductor device in which the thin film transistor described in Embodiment 1 is used will be described. Specifically, a light-emitting display device in which the thin film transistor is applied to a thin film transistor provided in a pixel portion of an active matrix substrate will be described with reference to
In an organic EL element, by application of voltage to a light-emitting element, electrons and holes are separately injected from a pair of electrodes into a layer containing a light-emitting organic compound, and current flows. Then, recombination of these carriers (the electrons and holes) causes the light-emitting organic compound to form an excited state and to emit light when it returns from the excited state to a ground state. Due to such a mechanism, such a light-emitting element is referred to as a current-excitation light-emitting element.
Inorganic EL elements are classified into a dispersion type inorganic EL element and a thin-film type inorganic EL element, depending on their element structures. A dispersion type inorganic EL element has a light-emitting layer where particles of a light-emitting material are dispersed in a binder, and its light emission mechanism is donor-acceptor recombination type light emission that utilizes a donor level and an acceptor level. A thin-film type inorganic EL element has a structure where a light-emitting layer is sandwiched between dielectric layers, which are further sandwiched between electrodes, and its light emission mechanism is localized type light emission that utilizes inner-shell electron transition of metal ions. Note that description is made here using an organic EL element as a light-emitting element.
The materials described in Embodiment 1 and the manufacturing method described in Embodiment 2 can be applied to the substrate 700, the gate electrode layer 701, the gate insulating layer 702, the oxide semiconductor layer 703, the conductive layer 704a, the conductive layer 704b, the metal oxide layer 705, the buffer layer 706, the first electrode layer 707a, and the second electrode layer 707b; therefore, here, the above description is to be referred to.
The sub-pixel includes a capacitor 752. The capacitor 752 includes a capacitor wiring 708 formed from the same material as the gate electrode layer 701 of the thin film transistors 750 and 751, the gate insulating layer 702, and the first electrode layer 707a of the thin film transistor 751, which extends to the sub-pixel.
An interlayer insulating layer 709 is provided over the thin film transistors 750 and 751 and the capacitor 752. Each of the thin film transistors 750 and 751 in
A light-emitting display device includes an organic EL element provided over a pixel electrode of an active matrix substrate, and a common electrode provided over the organic EL element. Note that the common electrode is set to have a low power supply potential VSS. When voltage corresponding to a potential difference between the high power supply potential VDD supplied to the pixel electrode through the thin film transistor and the low power supply potential VSS supplied to the common electrode is applied to the organic EL element, current flows to the organic EL element so that the organic EL element emits light. In the light-emitting display device, a thin film transistor in a pixel portion of the active matrix substrate is a switching element which controls current flowing in the organic EL element.
In the light-emitting display device of this embodiment, the thin film transistors 750 and 751 in each of which the metal oxide layer 705 is provided over the oxide semiconductor layer 703 are used as thin film transistors in the pixel portion of the active matrix substrate. The metal oxide layer 705 functions as a protective layer for suppressing incorporation of impurities (such as hydrogen and moisture) into the oxide semiconductor layer 703. Therefore, the material and manufacturing method of the interlayer insulating layer 709 can be selected depending on the purpose. As a result, a light-emitting display device with high performance or high reliability can be provided. Note that here, the light-emitting display device to which the thin film transistor in
In this embodiment, one example of a semiconductor device in which the thin film transistor described in Embodiment 1 is used will be described. Specifically, an electronic paper in which the thin film transistor is applied to a thin film transistor provided for an active matrix substrate will be described with reference to
The materials described in Embodiment 1 and the manufacturing method described in Embodiment 2 can be applied to the first substrate 900, the gate electrode layer 901, the gate insulating layer 902, the oxide semiconductor layer 903, the conductive layer 904a, the conductive layer 904b, the metal oxide layer 905, the buffer layer 906, the first electrode layer 907a, and the second electrode layer 907b; therefore, here, the above description is to be referred to.
An interlayer insulating layer 908 is provided over the thin film transistor 950. The thin film transistor 950 in
Between the pixel electrode 910 and a common electrode 912 which is provided for the second substrate 911, twisting balls 915 each having a black region 913a, a white region 913b, and a cavity 914 around the regions which is filled with liquid are provided. A space around the twisting balls 915 is filled with a filler 916 such as a resin.
An electronic paper in this embodiment employs a twisting ball display method. Twisting balls each colored in black or white are provided between a pixel electrode and a common electrode in the electronic paper. The twisting balls perform display in such a manner that the orientation is controlled by voltage application between the pixel electrode provided for the first substrate and the common electrode provided for the second substrate. In the electronic paper, a thin film transistor provided for an active matrix substrate is a switching element controlling voltage which is applied to twisting balls.
In the light-emitting display device of this embodiment, the thin film transistor 950 in which the metal oxide layer 905 is provided over the oxide semiconductor layer 903 is used as a thin film transistor provided for the active matrix substrate. The metal oxide layer 905 functions as a protective layer for suppressing incorporation of impurities (such as hydrogen and moisture) into the oxide semiconductor layer 903. Therefore, the material and manufacturing method of the interlayer insulating layer 908 can be selected depending on the purpose. As a result, an electronic paper with high performance or high reliability can be provided. Note that the electronic paper to which the thin film transistor in
Here, calculation results of change in electron states of titanium and titanium oxide depending on the difference in the content of oxygen, change in an electron state of an oxide semiconductor layer in accordance with oxygen deficiency, behavior of oxygen in the vicinity of a bonding interface between a titanium layer and an oxide semiconductor layer under thermal treatment, and behavior of oxygen in the vicinity of a bonding interface between a titanium oxide layer and an oxide semiconductor layer under thermal treatment are described. Next, the thin film transistor which is described in Embodiment 1 and in which titanium is applied to a composition material of the buffer layer is examined.
First, change in electron states of titanium and titanium oxide depending on the difference in the content of oxygen is examined. Here, results of obtaining the energy state density of crystal structures of titanium and a plurality of titanium oxides by structure optimization by the first-principle calculation using a plane wave-pseudopotential method based on density functional theory (DFT) are described. Specifically, graphs show the state density of Ti, TiO (NaCl type), Ti2O3 (Al2O3 type), TiO2 (Anatase type), TiO2 (Rutile type), and TiO2 (Brookite type) after structures thereof are optimized. Note that CASTEP was used for a calculation program, and GGA-PBE was used for an exchange-correlation function.
It is confirmed from
Next, change in an electron state of an oxide semiconductor layer in accordance with oxygen deficiency is examined. Here, calculation is performed in the case where an In-Ga—Zn—O-based oxide semiconductor material (In:Ga:Zn:O=1:1:1:4) is used for an oxide semiconductor layer.
First, an amorphous structure of the In-Ga—Zn—O-based oxide semiconductor was formed by a melt-quench method using classical molecular dynamics simulation. Note that the amorphous structure formed here is as follows: the total number of atoms is 84; and the density is 5.9 g/cm3. Born-Mayer-Huggins potential was used for the interatomic potential between metal and oxygen and between oxygen and oxygen, and Lennard-Jones potential was used for the interatomic potential between metal and metal. NTV ensemble was used for calculation. Materials Explorer was used as a calculation program.
After that, annealing by first-principle molecular dynamics (hereinafter also referred to as first-principle MD) using a plane wave-pseudopotential method based on density functional theory (DFT) was performed at a room temperature (298 K) on the structure obtained by the above calculation in order to optimize the structure. Then, the state density was calculated. In addition, first-principle MD calculation was used for calculation, optimization of the structure was performed on a structure in which one of oxygen atoms was removed randomly (a structure with oxygen deficiency), and the state density was calculated. Note that CASTEP was used as a calculation program; and GGA-PBE, an exchange-correlation function. First-principle MD was used for calculation by using NTV ensemble.
Next, behavior of oxygen in the vicinity of a bonding interface between a titanium layer and an oxide semiconductor layer under thermal treatment is examined. Here, titanium was deposited over the amorphous structure of the In-Ga—Zn—O-based oxide semiconductor obtained by the above first-principle calculation, and optimization of the structure was performed. Then, first-principle MD was used for calculation by using NTV ensemble. CASTEP was used as a calculation program; and GGA-PBE, an exchange-correlation function. The temperature was set at 350° C. (623 K).
Next, behavior of oxygen in the vicinity of a bonding interface between the titanium oxide (here, TiO2 (Rutile type) was used) layer and the oxide semiconductor layer under thermal treatment is examined. Here, TiO2 (Rutile type) was deposited over the amorphous structure of the In-Ga—Zn—O-based oxide semiconductor obtained by the first-principle calculation, and optimization of the structure was performed, and then, first-principle MD was used for calculation by using NTV ensemble. CASTEP was used as a calculation program; and GGA-PBE, an exchange-correlation function. The temperature was set at 700° C. (973 K).
Calculation results performed in this example are summarized below.
It is found from
It is found from
It is found from
It is found from
Next, the case where titanium is applied to the buffer layer in the thin film transistor described in Embodiment 1 is examined. By performing oxidation treatment on the titanium layer, a titanium oxide such as TiO2 (Anatase type), TiO2 (Rutile type), or TiO2 (Brookite type) which is an insulator or a semiconductor is formed to be used as a metal oxide layer included in the buffer layer. By performing thermal treatment at 350° C., oxygen in the oxide semiconductor layer is diffused into the titanium layer, whereby a titanium layer containing oxygen at high concentration and an oxide semiconductor layer whose oxygen concentration is lowered are formed. Therefore, the resistance of the oxide semiconductor layer can be effectively reduced, and ohmic contact between the oxide semiconductor layer and each of the source electrode layer and the drain electrode layer can be obtained through the buffer layer. In addition, diffusion of oxygen does not easily occur at an interface between the oxide semiconductor layer and the metal oxide layer, as compared with at an interface between an oxide semiconductor layer and a conductive layer. Accordingly, the oxide semiconductor layer whose oxygen concentration is lowered and whose resistance is reduced is not easily formed at the interface between the oxide semiconductor layer and the metal oxide layer, whereby an increase in off current of the thin film transistor can be suppressed.
From the above, it is confirmed that titanium is preferably used as a material applied to the buffer layer in the thin film transistor described in Embodiment 1.
This application is based on Japanese Patent Application serial No. 2009-037912 filed with Japan Patent Office on Feb. 20, 2009, the entire contents of which are hereby incorporated by reference.
| Number | Date | Country | Kind |
|---|---|---|---|
| 2009-037912 | Feb 2009 | JP | national |
| Number | Name | Date | Kind |
|---|---|---|---|
| 5352907 | Matsuda et al. | Oct 1994 | A |
| 5610082 | Oh | Mar 1997 | A |
| 5731856 | Kim et al. | Mar 1998 | A |
| 5744864 | Cillessen et al. | Apr 1998 | A |
| 5847410 | Nakajima | Dec 1998 | A |
| 6294274 | Kawazoe et al. | Sep 2001 | B1 |
| 6392721 | Ochiai et al. | May 2002 | B1 |
| 6514804 | Yamaguchi | Feb 2003 | B1 |
| 6563174 | Kawasaki et al. | May 2003 | B2 |
| 6586346 | Yamazaki et al. | Jul 2003 | B1 |
| 6727522 | Kawasaki et al. | Apr 2004 | B1 |
| 6956236 | Sasaki et al. | Oct 2005 | B1 |
| 6960812 | Yamazaki et al. | Nov 2005 | B2 |
| 7038240 | Matsumoto | May 2006 | B2 |
| 7049190 | Takeda et al. | May 2006 | B2 |
| 7061014 | Hosono et al. | Jun 2006 | B2 |
| 7064346 | Kawasaki et al. | Jun 2006 | B2 |
| 7105868 | Nause et al. | Sep 2006 | B2 |
| 7189992 | Wager, III et al. | Mar 2007 | B2 |
| 7211825 | Shih et al. | May 2007 | B2 |
| 7279714 | Koo et al. | Oct 2007 | B2 |
| 7282782 | Hoffman et al. | Oct 2007 | B2 |
| 7297977 | Hoffman et al. | Nov 2007 | B2 |
| 7301211 | Yamazaki et al. | Nov 2007 | B2 |
| 7323356 | Hosono et al. | Jan 2008 | B2 |
| 7339187 | Wager, III et al. | Mar 2008 | B2 |
| 7385224 | Ishii et al. | Jun 2008 | B2 |
| 7402506 | Levy et al. | Jul 2008 | B2 |
| 7411209 | Endo et al. | Aug 2008 | B2 |
| 7453065 | Saito et al. | Nov 2008 | B2 |
| 7453087 | Iwasaki | Nov 2008 | B2 |
| 7462862 | Hoffman et al. | Dec 2008 | B2 |
| 7468304 | Kaji et al. | Dec 2008 | B2 |
| 7485936 | Koyama et al. | Feb 2009 | B2 |
| 7501293 | Ito et al. | Mar 2009 | B2 |
| 7563678 | Koyama et al. | Jul 2009 | B2 |
| 7564058 | Yamazaki et al. | Jul 2009 | B2 |
| 7573538 | Nomura et al. | Aug 2009 | B2 |
| 7583354 | Tsubata et al. | Sep 2009 | B2 |
| 7598129 | Kanno et al. | Oct 2009 | B2 |
| 7608531 | Isa et al. | Oct 2009 | B2 |
| 7674650 | Akimoto et al. | Mar 2010 | B2 |
| 7683382 | Jung et al. | Mar 2010 | B2 |
| 7732819 | Akimoto et al. | Jun 2010 | B2 |
| 7768009 | Kobayashi et al. | Aug 2010 | B2 |
| 7791075 | Kobayashi et al. | Sep 2010 | B2 |
| 7804174 | Sasaki et al. | Sep 2010 | B2 |
| 7855379 | Hayashi et al. | Dec 2010 | B2 |
| 7880857 | Tsubata et al. | Feb 2011 | B2 |
| 7884360 | Takechi et al. | Feb 2011 | B2 |
| 7888207 | Wager, III et al. | Feb 2011 | B2 |
| 7893431 | Kim et al. | Feb 2011 | B2 |
| 7910490 | Akimoto et al. | Mar 2011 | B2 |
| 7919365 | Kim et al. | Apr 2011 | B2 |
| 7923287 | Lee et al. | Apr 2011 | B2 |
| 7932521 | Akimoto et al. | Apr 2011 | B2 |
| 7947539 | You | May 2011 | B2 |
| 7968382 | Jinbo et al. | Jun 2011 | B2 |
| 8022401 | Saito et al. | Sep 2011 | B2 |
| 8045076 | Tsubata et al. | Oct 2011 | B2 |
| 8063421 | Kang et al. | Nov 2011 | B2 |
| 8084307 | Itagaki et al. | Dec 2011 | B2 |
| 8088652 | Hayashi et al. | Jan 2012 | B2 |
| 8143678 | Kim et al. | Mar 2012 | B2 |
| 8158989 | Jung et al. | Apr 2012 | B2 |
| 8164700 | Hatta et al. | Apr 2012 | B2 |
| 8247276 | Kondo | Aug 2012 | B2 |
| 8274077 | Akimoto et al. | Sep 2012 | B2 |
| 8415198 | Itagaki et al. | Apr 2013 | B2 |
| 8420442 | Takechi et al. | Apr 2013 | B2 |
| 8421070 | Kim et al. | Apr 2013 | B2 |
| 8436349 | Sano et al. | May 2013 | B2 |
| 8466463 | Akimoto et al. | Jun 2013 | B2 |
| 8487436 | Isa. et al. | Jul 2013 | B2 |
| 8507910 | Ofuji et al. | Aug 2013 | B2 |
| 8558323 | Kim et al. | Oct 2013 | B2 |
| 8599111 | Abe et al. | Dec 2013 | B2 |
| 8629069 | Akimoto et al. | Jan 2014 | B2 |
| 8629817 | Abe et al. | Jan 2014 | B2 |
| 8629819 | Umezaki | Jan 2014 | B2 |
| 8648346 | Isa. et al. | Feb 2014 | B2 |
| 8669550 | Akimoto et al. | Mar 2014 | B2 |
| 8698145 | Kim | Apr 2014 | B2 |
| 8735882 | Kim et al. | May 2014 | B2 |
| 8748879 | Yano et al. | Jun 2014 | B2 |
| 8790959 | Akimoto et al. | Jul 2014 | B2 |
| 8796069 | Akimoto et al. | Aug 2014 | B2 |
| 8803768 | Kimura et al. | Aug 2014 | B2 |
| 8879010 | Yamazaki | Nov 2014 | B2 |
| 8994060 | Jinbo et al. | Mar 2015 | B2 |
| 9099562 | Akimoto et al. | Aug 2015 | B2 |
| 9184221 | Jinbo et al. | Nov 2015 | B2 |
| 9269725 | Yamazaki | Feb 2016 | B2 |
| 9356152 | Isa et al. | May 2016 | B2 |
| 9613568 | Umezaki | Apr 2017 | B2 |
| 10096623 | Kondo | Oct 2018 | B2 |
| 10304962 | Akimoto et al. | May 2019 | B2 |
| 10453873 | Miyake | Oct 2019 | B2 |
| 10586811 | Kondo | Mar 2020 | B2 |
| 10622380 | Miyake | Apr 2020 | B2 |
| 10763372 | Miyairi | Sep 2020 | B2 |
| 20010046027 | Tai et al. | Nov 2001 | A1 |
| 20020043662 | Yamazaki et al. | Apr 2002 | A1 |
| 20020056838 | Ogawa | May 2002 | A1 |
| 20020068446 | Wu et al. | Jun 2002 | A1 |
| 20020132454 | Ohtsu et al. | Sep 2002 | A1 |
| 20030178656 | Kwon et al. | Sep 2003 | A1 |
| 20030189401 | Kido et al. | Oct 2003 | A1 |
| 20030218222 | Wager, III et al. | Nov 2003 | A1 |
| 20040038446 | Takeda et al. | Feb 2004 | A1 |
| 20040080263 | Yamazaki et al. | Apr 2004 | A1 |
| 20040127038 | Carcia et al. | Jul 2004 | A1 |
| 20050017302 | Hoffman | Jan 2005 | A1 |
| 20050199959 | Chiang et al. | Sep 2005 | A1 |
| 20050242745 | Jung | Nov 2005 | A1 |
| 20060035452 | Carcia et al. | Feb 2006 | A1 |
| 20060043377 | Hoffman et al. | Mar 2006 | A1 |
| 20060091793 | Baude et al. | May 2006 | A1 |
| 20060108529 | Saito et al. | May 2006 | A1 |
| 20060108636 | Sano et al. | May 2006 | A1 |
| 20060110867 | Yabuta et al. | May 2006 | A1 |
| 20060113536 | Kumomi et al. | Jun 2006 | A1 |
| 20060113539 | Sano et al. | Jun 2006 | A1 |
| 20060113549 | Den et al. | Jun 2006 | A1 |
| 20060113565 | Abe et al. | Jun 2006 | A1 |
| 20060169973 | Isa et al. | Aug 2006 | A1 |
| 20060170111 | Isa et al. | Aug 2006 | A1 |
| 20060197092 | Hoffman et al. | Sep 2006 | A1 |
| 20060202934 | Shin et al. | Sep 2006 | A1 |
| 20060208977 | Kimura | Sep 2006 | A1 |
| 20060221006 | Umezaki | Oct 2006 | A1 |
| 20060228974 | Thelss et al. | Oct 2006 | A1 |
| 20060231882 | Kim et al. | Oct 2006 | A1 |
| 20060238135 | Kimura | Oct 2006 | A1 |
| 20060244107 | Sugihara et al. | Nov 2006 | A1 |
| 20060284171 | Levy et al. | Dec 2006 | A1 |
| 20060284172 | Ishii | Dec 2006 | A1 |
| 20060292777 | Dunbar | Dec 2006 | A1 |
| 20070015319 | Chin et al. | Jan 2007 | A1 |
| 20070024187 | Shin et al. | Feb 2007 | A1 |
| 20070046191 | Saito | Mar 2007 | A1 |
| 20070052025 | Yabuta | Mar 2007 | A1 |
| 20070054507 | Kaji et al. | Mar 2007 | A1 |
| 20070072439 | Akimoto et al. | Mar 2007 | A1 |
| 20070090365 | Hayashi et al. | Apr 2007 | A1 |
| 20070108446 | Akimoto | May 2007 | A1 |
| 20070152217 | Lai et al. | Jul 2007 | A1 |
| 20070172591 | Seo et al. | Jul 2007 | A1 |
| 20070187678 | Hirao et al. | Aug 2007 | A1 |
| 20070187760 | Furuta et al. | Aug 2007 | A1 |
| 20070194379 | Hosono et al. | Aug 2007 | A1 |
| 20070216280 | Hara et al. | Sep 2007 | A1 |
| 20070229408 | Primerano | Oct 2007 | A1 |
| 20070241327 | Kim et al. | Oct 2007 | A1 |
| 20070252147 | Kim et al. | Nov 2007 | A1 |
| 20070252928 | Ito et al. | Nov 2007 | A1 |
| 20070272922 | Kim et al. | Nov 2007 | A1 |
| 20070287296 | Chang | Dec 2007 | A1 |
| 20080006877 | Mardilovich et al. | Jan 2008 | A1 |
| 20080038882 | Takechi et al. | Feb 2008 | A1 |
| 20080038929 | Chang | Feb 2008 | A1 |
| 20080044982 | You | Feb 2008 | A1 |
| 20080050595 | Nakagawara et al. | Feb 2008 | A1 |
| 20080073653 | Iwasaki | Mar 2008 | A1 |
| 20080083950 | Pan et al. | Apr 2008 | A1 |
| 20080090341 | Tanaka et al. | Apr 2008 | A1 |
| 20080106191 | Kawase | May 2008 | A1 |
| 20080108198 | Wager, III et al. | May 2008 | A1 |
| 20080128689 | Lee et al. | Jun 2008 | A1 |
| 20080129195 | Ishizaki et al. | Jun 2008 | A1 |
| 20080166834 | Kim et al. | Jul 2008 | A1 |
| 20080182358 | Cowdery-Corvan et al. | Jul 2008 | A1 |
| 20080203387 | Kang et al. | Aug 2008 | A1 |
| 20080224133 | Park et al. | Sep 2008 | A1 |
| 20080254569 | Hoffman et al. | Oct 2008 | A1 |
| 20080258139 | Ito et al. | Oct 2008 | A1 |
| 20080258140 | Lee et al. | Oct 2008 | A1 |
| 20080258141 | Park et al. | Oct 2008 | A1 |
| 20080258143 | Kim et al. | Oct 2008 | A1 |
| 20080284933 | Ito et al. | Nov 2008 | A1 |
| 20080291350 | Hayashi et al. | Nov 2008 | A1 |
| 20080296568 | Ryu et al. | Dec 2008 | A1 |
| 20080308796 | Akimoto et al. | Dec 2008 | A1 |
| 20080308797 | Akimoto et al. | Dec 2008 | A1 |
| 20080308804 | Akimoto et al. | Dec 2008 | A1 |
| 20080308805 | Akimoto et al. | Dec 2008 | A1 |
| 20080308806 | Akimoto et al. | Dec 2008 | A1 |
| 20090001374 | Inoue et al. | Jan 2009 | A1 |
| 20090001881 | Nakayama | Jan 2009 | A1 |
| 20090004772 | Jinbo et al. | Jan 2009 | A1 |
| 20090008638 | Kang et al. | Jan 2009 | A1 |
| 20090008639 | Akimoto et al. | Jan 2009 | A1 |
| 20090020759 | Yamazaki | Jan 2009 | A1 |
| 20090065771 | Iwasaki et al. | Mar 2009 | A1 |
| 20090065784 | Kobayashi et al. | Mar 2009 | A1 |
| 20090066867 | Tsubata et al. | Mar 2009 | A1 |
| 20090068773 | Lai et al. | Mar 2009 | A1 |
| 20090073325 | Kuwabara et al. | Mar 2009 | A1 |
| 20090090915 | Yamazaki et al. | Apr 2009 | A1 |
| 20090114910 | Chang | May 2009 | A1 |
| 20090134399 | Sakakura et al. | May 2009 | A1 |
| 20090140259 | Yamazaki | Jun 2009 | A1 |
| 20090152506 | Umeda et al. | Jun 2009 | A1 |
| 20090152541 | Maekawa et al. | Jun 2009 | A1 |
| 20090160741 | Inoue et al. | Jun 2009 | A1 |
| 20090167974 | Choi et al. | Jul 2009 | A1 |
| 20090180045 | Yoon et al. | Jul 2009 | A1 |
| 20090184315 | Lee et al. | Jul 2009 | A1 |
| 20090278122 | Hosono et al. | Nov 2009 | A1 |
| 20090280600 | Hosono et al. | Nov 2009 | A1 |
| 20090294765 | Tanaka et al. | Dec 2009 | A1 |
| 20090305461 | Akimoto et al. | Dec 2009 | A1 |
| 20100025677 | Yamazaki et al. | Feb 2010 | A1 |
| 20100025678 | Yamazaki et al. | Feb 2010 | A1 |
| 20100025679 | Yamazaki et al. | Feb 2010 | A1 |
| 20100032665 | Yamazaki et al. | Feb 2010 | A1 |
| 20100035379 | Miyairi et al. | Feb 2010 | A1 |
| 20100051937 | Kaji et al. | Mar 2010 | A1 |
| 20100051949 | Yamazaki et al. | Mar 2010 | A1 |
| 20100059745 | Yoon et al. | Mar 2010 | A1 |
| 20100065840 | Yamazaki et al. | Mar 2010 | A1 |
| 20100065841 | Lee et al. | Mar 2010 | A1 |
| 20100065845 | Nakayama | Mar 2010 | A1 |
| 20100072467 | Yamazaki et al. | Mar 2010 | A1 |
| 20100073268 | Matsunaga et al. | Mar 2010 | A1 |
| 20100117078 | Kuwabara et al. | May 2010 | A1 |
| 20100127266 | Saito et al. | May 2010 | A1 |
| 20100133530 | Akimoto et al. | Jun 2010 | A1 |
| 20100140612 | Omura et al. | Jun 2010 | A1 |
| 20100148169 | Kim et al. | Jun 2010 | A1 |
| 20100163868 | Yamazaki et al. | Jul 2010 | A1 |
| 20100163876 | Inoue et al. | Jul 2010 | A1 |
| 20100181565 | Sakata et al. | Jul 2010 | A1 |
| 20100193783 | Yamazaki et al. | Aug 2010 | A1 |
| 20100244034 | Miyairi | Sep 2010 | A1 |
| 20100285624 | Kobayashi et al. | Nov 2010 | A1 |
| 20100295042 | Yano et al. | Nov 2010 | A1 |
| 20100301326 | Miyairi et al. | Dec 2010 | A1 |
| 20100304515 | Kobayashi et al. | Dec 2010 | A1 |
| 20110104851 | Akimoto et al. | May 2011 | A1 |
| 20110108833 | Yamazaki et al. | May 2011 | A1 |
| 20110114942 | Akimoto et al. | May 2011 | A1 |
| 20110121290 | Akimoto et al. | May 2011 | A1 |
| 20110212571 | Yamazaki et al. | Sep 2011 | A1 |
| 20110215318 | Yamazaki et al. | Sep 2011 | A1 |
| 20110215319 | Yamazaki et al. | Sep 2011 | A1 |
| 20110291089 | Akimoto et al. | Dec 2011 | A1 |
| 20120129288 | Kobayashi et al. | May 2012 | A1 |
| 20120273780 | Yamazaki et al. | Nov 2012 | A1 |
| 20120286267 | Suzawa et al. | Nov 2012 | A1 |
| 20130105793 | Ito et al. | May 2013 | A1 |
| 20130140557 | Miyairi et al. | Jun 2013 | A1 |
| 20130189815 | Ryu et al. | Jul 2013 | A1 |
| 20130237012 | Takechi et al. | Sep 2013 | A1 |
| 20130299824 | Akimoto et al. | Nov 2013 | A1 |
| 20140118653 | Umezaki | May 2014 | A1 |
| 20140320548 | Iida et al. | Oct 2014 | A1 |
| 20140346506 | Kimura et al. | Nov 2014 | A1 |
| 20150187818 | Miyake | Jul 2015 | A1 |
| 20150255518 | Watanabe | Sep 2015 | A1 |
| 20170062483 | Kimura et al. | Mar 2017 | A1 |
| 20180040741 | Miyairi et al. | Feb 2018 | A1 |
| 20180076331 | Miyairi et al. | Mar 2018 | A1 |
| 20190051759 | Akimoto et al. | Feb 2019 | A1 |
| 20190074379 | Miyairi | Mar 2019 | A1 |
| 20190109158 | Kondo | Apr 2019 | A1 |
| 20190305014 | Yamamoto et al. | Oct 2019 | A1 |
| 20190326444 | Akimoto et al. | Oct 2019 | A1 |
| 20210173254 | Yamazaki | Jun 2021 | A1 |
| 20220208932 | Yun | Jun 2022 | A1 |
| 20220285560 | Kunitake | Sep 2022 | A1 |
| 20220416008 | Hirose | Dec 2022 | A1 |
| Number | Date | Country |
|---|---|---|
| 001091551 | Aug 1994 | CN |
| 001033252 | Nov 1996 | CN |
| 001405898 | Mar 2003 | CN |
| 001553269 | Dec 2004 | CN |
| 001656618 | Aug 2005 | CN |
| 101060139 | Oct 2007 | CN |
| 101226901 | Jul 2008 | CN |
| 101236897 | Aug 2008 | CN |
| 101257048 | Sep 2008 | CN |
| 101335304 | Dec 2008 | CN |
| 101339954 | Jan 2009 | CN |
| 101346751 | Jan 2009 | CN |
| 101641794 | Feb 2010 | CN |
| 0506117 | Sep 1992 | EP |
| 1063693 | Dec 2000 | EP |
| 1624333 | Feb 2006 | EP |
| 1624489 | Feb 2006 | EP |
| 1737044 | Dec 2006 | EP |
| 1770788 | Apr 2007 | EP |
| 1918904 | May 2008 | EP |
| 1933385 | Jun 2008 | EP |
| 1981085 | Oct 2008 | EP |
| 1983499 | Oct 2008 | EP |
| 1995787 | Nov 2008 | EP |
| 1998373 | Dec 2008 | EP |
| 1998374 | Dec 2008 | EP |
| 1998375 | Dec 2008 | EP |
| 2006824 | Dec 2008 | EP |
| 2083456 | Jul 2009 | EP |
| 2226847 | Sep 2010 | EP |
| 3614442 | Feb 2020 | EP |
| 60-198861 | Oct 1985 | JP |
| 63-210022 | Aug 1988 | JP |
| 63-210023 | Aug 1988 | JP |
| 63-210024 | Aug 1988 | JP |
| 63-215519 | Sep 1988 | JP |
| 63-239117 | Oct 1988 | JP |
| 63-265818 | Nov 1988 | JP |
| 03-231472 | Oct 1991 | JP |
| 04-218926 | Aug 1992 | JP |
| 04-302438 | Oct 1992 | JP |
| 05-251705 | Sep 1993 | JP |
| 08-264794 | Oct 1996 | JP |
| 11-505377 | May 1999 | JP |
| 2000-044236 | Feb 2000 | JP |
| 2000-150900 | May 2000 | JP |
| 2000-171834 | Jun 2000 | JP |
| 2001-036095 | Feb 2001 | JP |
| 2002-076356 | Mar 2002 | JP |
| 2002-289859 | Oct 2002 | JP |
| 2003-086000 | Mar 2003 | JP |
| 2003-086808 | Mar 2003 | JP |
| 2003-197612 | Jul 2003 | JP |
| 2004-103957 | Apr 2004 | JP |
| 2004-264673 | Sep 2004 | JP |
| 2004-273614 | Sep 2004 | JP |
| 2004-273732 | Sep 2004 | JP |
| 2004-327809 | Nov 2004 | JP |
| 2005-285890 | Oct 2005 | JP |
| 2006-047999 | Feb 2006 | JP |
| 2006-080494 | Mar 2006 | JP |
| 2006-237542 | Sep 2006 | JP |
| 2006-237587 | Sep 2006 | JP |
| 2006-269696 | Oct 2006 | JP |
| 2006-313350 | Nov 2006 | JP |
| 2007-012783 | Jan 2007 | JP |
| 2007-027710 | Feb 2007 | JP |
| 2007-047775 | Feb 2007 | JP |
| 2007-096055 | Apr 2007 | JP |
| 2007-123861 | May 2007 | JP |
| 2007-134482 | May 2007 | JP |
| 2007-157916 | Jun 2007 | JP |
| 2007-212699 | Aug 2007 | JP |
| 2007-250983 | Sep 2007 | JP |
| 2007-258675 | Oct 2007 | JP |
| 2007-272224 | Oct 2007 | JP |
| 2007-284342 | Nov 2007 | JP |
| 2007-286150 | Nov 2007 | JP |
| 2007-294951 | Nov 2007 | JP |
| 2008-042088 | Feb 2008 | JP |
| 2008-053356 | Mar 2008 | JP |
| 2008-130814 | Jun 2008 | JP |
| 2008-134625 | Jun 2008 | JP |
| 2008-139619 | Jun 2008 | JP |
| 2008-140984 | Jun 2008 | JP |
| 2008-159935 | Jul 2008 | JP |
| 2008-199005 | Aug 2008 | JP |
| 2008-211184 | Sep 2008 | JP |
| 2008-211191 | Sep 2008 | JP |
| 2008-216529 | Sep 2008 | JP |
| 2008-218495 | Sep 2008 | JP |
| 2008-219008 | Sep 2008 | JP |
| 2008-235871 | Oct 2008 | JP |
| 2008-270744 | Nov 2008 | JP |
| 2008-276211 | Nov 2008 | JP |
| 2008-310312 | Dec 2008 | JP |
| 2009-021480 | Jan 2009 | JP |
| 2009-021612 | Jan 2009 | JP |
| 2009-031742 | Feb 2009 | JP |
| 2009-031750 | Feb 2009 | JP |
| 2009-048189 | Mar 2009 | JP |
| 2009-533884 | Sep 2009 | JP |
| 5698431 | Apr 2015 | JP |
| 2003-0005752 | Jan 2003 | KR |
| 2006-0048913 | May 2006 | KR |
| 2006-0134953 | Dec 2006 | KR |
| 2007-0102939 | Oct 2007 | KR |
| 2007-0103231 | Oct 2007 | KR |
| 2008-0072571 | Aug 2008 | KR |
| 2008-0074515 | Aug 2008 | KR |
| 2008-0079906 | Sep 2008 | KR |
| 2008-0087839 | Oct 2008 | KR |
| 2009-0128535 | Dec 2009 | KR |
| 200811959 | Mar 2008 | TW |
| 200901482 | Jan 2009 | TW |
| 200903874 | Jan 2009 | TW |
| WO-2000036641 | Jun 2000 | WO |
| WO-2004038757 | May 2004 | WO |
| WO-2004114391 | Dec 2004 | WO |
| WO-2005048223 | May 2005 | WO |
| WO-2006031017 | Mar 2006 | WO |
| WO-2007074556 | Jul 2007 | WO |
| WO-2007105778 | Sep 2007 | WO |
| WO-2007119386 | Oct 2007 | WO |
| WO-2007120010 | Oct 2007 | WO |
| WO-2008023553 | Feb 2008 | WO |
| WO-2008062720 | May 2008 | WO |
| WO-2008093583 | Aug 2008 | WO |
| WO-2008105250 | Sep 2008 | WO |
| WO-2008105347 | Sep 2008 | WO |
| WO-2008126878 | Oct 2008 | WO |
| WO-2008126883 | Oct 2008 | WO |
| Entry |
|---|
| Chinese Office Action (Application No. 201810285306.4) dated Jan. 4, 2022. |
| Prins.M et al., “A Ferroelectric Transparent Thin-Film Transistor”, Appl. Phys. Lett. (Applied Physics Letters) , Jun. 17, 1996, vol. 68, No. 25, pp. 3650-3652. |
| Nakamura.M et al., “The phase relations in the In2O3—Ga2ZnO4—ZnO system at 1350° C.”, Journal of Solid State Chemistry, Aug. 1, 1991, vol. 93, No. 2, pp. 298-315. |
| Kimizuka.N et al., “Syntheses and Single-Crystal Data of Homologous Compounds, In2O3(ZnO)m (m=3, 4, and 5), InGaO3(ZnO)3, and Ga2O3(ZnO)m (m=7, 8, 9, and 16) in the In2O3—ZnGa2O4—ZnO System”, Journal of Solid State Chemistry, Apr. 1, 1995, vol. 116, No. 1, pp. 170-178. |
| Nakamura.M et al., “Syntheses and crystal structures of new homologous compounds, indium iron zinc oxides (InFeO3(ZnO)m) (m natural number) and related compounds”, Kotai Butsuri (Solid State Physics), 1993, vol. 28, No. 5, pp. 317-327. |
| Nomura.K et al., “Thin-Film Transistor Fabricated in Single-Crystalline Transparent Oxide Semiconductor”, Science, May 23, 2003, vol. 300, No. 5623, pp. 1269-1272. |
| Nomura.K et al., “Room-Temperature Fabrication of Transparent Flexible Thin-Film Transistors Using Amorphous Oxide Semiconductors”, Nature, Nov. 25, 2004, vol. 432, pp. 488-492. |
| Dembo.H et al., “RFCPUS on Glass and Plastic Substrates Fabricated by TFT Transfer Technology”, IEDM 05: Technical Digest of International Electron Devices Meeting, Decembers, 2005, pp. 1067-1069. |
| Ikeda.T et al., “Full-Functional System Liquid Crystal Display Using Cg-Silicon Technology”, SID Digest '04 : SID International Symposium Digest of Technical Papers, 2004, vol. 35, pp. 860-863. |
| Takahashi.M et al., “Theoretical Analysis of IGZO Transparent Amorphous Oxide Semiconductor”, IDW '08 : Proceedings of the 15th International Display Workshops, Dec. 3, 2008, pp. 1637-1640. |
| Osada.T et al., “15.2: Development of Driver-Integrated Panel using Amorphous In—Ga—Zn-Oxide TFT”, SID Digest '09 : SID International Symposium Digest of Technical Papers, May 31, 2009, vol. 40, pp. 184-187. |
| Li.C et al., “Modulated Structures of Homologous Compounds InMO3(ZnO)m (M=In,Ga; m=Integer) Described by Four-Dimensional Superspace Group”, Journal of Solid State Chemistry, 1998, vol. 139, pp. 347-355. |
| Lee.J et al., “World's Largest (15-Inch) XGA AMLCD Panel Using IGZO Oxide TFT”, SID Digest '08 : SID International Symposium Digest of Technical Papers, May 20, 2008, vol. 39, pp. 625-628. |
| Nowatari.H et al., “60.2: Intermediate Connector With Suppressed Voltage Loss for White Tandem OLEDS”, SID Digest '09 : SID International Symposium Digest of Technical Papers, May 31, 2009, vol. 40, pp. 899-902. |
| Kanno.H et al., “White Stacked Electrophosphorecent Organic Light-Emitting Devices Employing MoO3 as a Charge-Generation Layer”, Adv. Mater. (Advanced Materials), 2006, vol. 18, No. 3, pp. 339-342. |
| Tsuda.K et al., “Ultra Low Power Consumption Technologies for Mobile TFT-LCDs ”, IDW '02 : Proceedings of the 9th International Display Workshops, Dec. 4, 2002, pp. 295-298. |
| Jeong.J et al., “3.1: Distinguished Paper: 12.1-Inch WXGA AMOLED Display Driven by Indium-Gallium-Zinc Oxide TFTs Array”, SID Digest '08 : SID International Symposium Digest of Technical Papers, May 20, 2008, vol. 39, No. 1, pp. 1-4. |
| Park.J et al., “High performance amorphous oxide thin film transistors with self-aligned top-gate structure”, IEDM 09: Technical Digest of International Electron Devices Meeting, Dec. 7, 2009, pp. 191-194. |
| Kurokawa.Y et al., “UHF RFCPUS on Flexible and Glass Substrates for Secure RFID Systems”, Journal of Solid-State Circuits , 2008, vol. 43, No. 1, pp. 292-299. |
| Ohara.H et al., “Amorphous In—Ga—Zn-Oxide TFTs with Suppressed Variation for 4.0 inch QVGA AMOLED Display”, AM-FPD '09 Digest of Technical Papers, Jul. 1, 2009, pp. 227-230, the Japan Society of Applied Physics. |
| Coates.D et al., “Optical Studies of the Amorphous Liquid-Cholesteric Liquid Crystal Transition:The “Blue Phase””, Physics Letters, Sep. 10, 1973, vol. 45A, No. 2, pp. 115-116. |
| Cho.D et al., “21.2:AL and Sn-Doped Zinc Indium Oxide Thin Film Transistors for AMOLED Back Plane”, SID Digest '09 : SID International Symposium Digest of Technical Papers, May 31, 2009, pp. 280-283. |
| Lee.M et al., “15.4:Excellent Performance of Indium-Oxide-Based Thin-Film Transistors by DC Sputtering”, SID Digest '09 : SID International Symposium Digest of Technical Papers, May 31, 2009, pp. 191-193. |
| Jin.D et al., “65.2:Distinguished Paper:World-Largest (6.5″) Flexible Full Color Top Emission Amoled Display on Plastic Film and Its Bending Properties”, SID Digest '09 : SID International Symposium Digest of Technical Papers, May 31, 2009, pp. 983-985. |
| Sakata.J et al., “Development of 4.0-IN. AMOLED Display With Driver Circuit Using Amorphous In—Ga—Zn-Oxide TFTS”, IDW '09 : Proceedings of the 16th International Display Workshops, 2009, pp. 689-692. |
| Park.J et al., “Amorphous Indium-Gallium-Zinc Oxide TFTS and Their Application for Large Size AMOLED”, AM-FPD '08 Digest of Technical Papers, Jul. 2, 2008, pp. 275-278. |
| Park.S et al., “Challenge to Future Displays: Transparent AM-OLED Driven by PEALD Grown ZnO TFT”, IMID '07 Digest, 2007, pp. 1249-1252. |
| Godo.H et al., “Temperature Dependence of Characteristicsand Electronic Structure for Amorphous In—Ga—Zn-Oxide TFT”, AM-FPD '09 Digest of Technical Papers, Jul. 1, 2009, pp. 41-44. |
| Osada.T et al., “Development of Driver-Integrated Panel Using Amorphous In—Ga—Zn-Oxide TFT”, AM-FPD '09 Digest of Technical Papers, Jul. 1, 2009, pp. 33-36. |
| Hirao.T et al., “Novel Top-Gate Zinc Oxide Thin-Film Transistors (ZnO TFTS) for AMLCDS”, J. Soc. Inf. Display (Journal of the Society for Information Display), 2007, vol. 15, No. 1, pp. 17-22. |
| Hosono.H, “68.3:Invited Paper:Transparent Amorphous Oxide Semiconductors for High Performance TFT”, SID Digest '07 : SID International Symposium Digest of Technical Papers, 2007, vol. 38, pp. 1830-1833. |
| Godo.H et al., “P-9:Numerical Analysis on Temperature Dependence of Characteristics of Amorphous In—Ga—Zn-Oxide TFT”, SID Digest '09 : SID International Symposium Digest of Technical Papers, May 31, 2009, pp. 1110-1112. |
| Ohara.H et al., “21.3:4.0 IN. QVGA AMOLED Display Using In—Ga—Zn-Oxide TFTS With a Novel Passivation Layer”, SID Digest '09 : SID International Symposium Digest of Technical Papers, May 31, 2009, pp. 284-287. |
| Miyasaka.M, “SUFTLA Flexible Microelectronics on Their Way to Business”, SID Digest '07 : SID International Symposium Digest of Technical Papers, 2007, vol. 38, pp. 1673-1676. |
| Chern.H et al., “An Analytical Model for the Above-Threshold Characteristics of Polysilicon Thin-Film Transistors”, IEEE Transactions on Electron Devices, Jul. 1, 1995, vol. 42, No. 7, pp. 1240-1246. |
| Kikuchi.H et al., “39.1 Invited Paper:Optically Isotropic Nano-Structured Liquid Crystal Composites for Display Applications”, SID Digest '09 : SID International Symposium Digest of Technical Papers, May 31, 2009, pp. 578-581. |
| Asaoka.Y et al., “29.1:Polarizer-Free Reflective LCD Combined With Ultra Low-Power Driving Technology”, SID Digest '09 : SID International Symposium Digest of Technical Papers, May 31, 2009, pp. 395-398. |
| Lee.H et al., “Current Status of, Challenges to, and Perspective View of AM-OLED”, IDW '06 : Proceedings of the 13th International Display Workshops, Dec. 7, 2006, pp. 663-666. |
| Kikuchi.H et al., “62.2:Invited Paper:Fast Electro-Optical Switching in Polymer-Stabilized Liquid Crystalline Blue Phases for Display Application”, SID Digest '07 : SID International Symposium Digest of Technical Papers, 2007, vol. 38, pp. 1737-1740. |
| Kikuchi.H et al., “Polymer-Stabilized Liquid Crystal Blue Phases”, Nature Materials, Sep. 2, 2002, vol. 1, pp. 64-68. |
| Kimizuka.N et al., “SPINEL,YbFe2O4, and Yb2Fe3O7 Types of Structures for Compounds in the In2O3 and Sc2O3—A2O3—BO Systems [A; Fe, Ga, or Al; B: Mg, Mn, Fe, Ni, Cu,or Zn] At Temperatures Over 1000° C.”, Journal of Solid State Chemistry, 1985, vol. 60, pp. 382-384. |
| Kitzerow.H et al., “Observation of Blue Phases in Chiral Networks”, Liquid Crystals, 1993, vol. 14, No. 3, pp. 911-916. |
| Costello.M et al., “Electron Microscopy of a Cholesteric Liquid Crystal and Its Blue Phase”, Phys. Rev. A (Physical Review. A), May 1, 1984, vol. 29, No. 5, pp. 2957-2959. |
| Meiboom.S et al., “Theory of the Blue Phase of Cholesteric Liquid Crystals”, Phys. Rev. Lett. (Physical Review Letters), May 4, 1981, vol. 46, No. 18, pp. 1216-1219. |
| Fortunato.E et al., “Wide-Bandgap High-Mobility ZnO Thin-Film Transistors Produced at Room Temperature”, Appl. Phys. Lett. (Applied Physics Letters) , Sep. 27, 2004, vol. 85, No. 13, pp. 2541-2543. |
| Park.J et al., “Improvements in the Device Characteristics of Amorphous Indium Gallium Zinc Oxide Thin-Film Transistors by Ar Plasma Treatment”, Appl. Phys. Lett. (Applied Physics Letters) , Jun. 26, 2007, vol. 90, No. 26, pp. 262106-1-262106-3. |
| Hayashi.R et al., “42.1: Invited Paper: Improved Amorphous In—Ga—Zn—O TFTS”, SID Digest '08 : SID International Symposium Digest of Technical Papers, May 20, 2008, vol. 39, pp. 621-624. |
| Masuda.S et al., “Transparent thin film transistors using ZnO as an active channel layer and their electrical properties”, J. Appl. Phys. (Journal of Applied Physics) , Feb. 1, 2003, vol. 93, No. 3, pp. 1624-1630. |
| Asakuma.N et al., “Crystallization and Reduction of Sol-Gel-Derived Zinc Oxide Films by Irradiation With Ultraviolet Lamp”, Journal of Sol-Gel Science and Technology, 2003, vol. 26, pp. 181-184. |
| Nomura.K et al., “Carrier transport in transparent oxide semiconductor with intrinsic structural randomness probed using single-crystalline InGaO3(ZnO)5 films”, Appl. Phys. Lett. (Applied Physics Letters) , Sep. 13, 2004, vol. 85, No. 11, pp. 1993-1995. |
| Son.K et al., “42.4L: Late-News Paper: 4 Inch QVGA AMOLED Driven by the Threshold Voltage Controlled Amorphous GIZO (Ga2O3—In2O3—ZnO) TFT”, SID Digest '08 : SID International Symposium Digest of Technical Papers, May 20, 2008, vol. 39, pp. 633-636. |
| Van de Walle.C, “Hydrogen as a Cause of Doping in Zinc Oxide”, Phys. Rev. Lett. (Physical Review Letters), Jul. 31, 2000, vol. 85, No. 5, pp. 1012-1015. |
| Fung.T et al., “2-D Numerical Simulation of High Performance Amorphous In—Ga—Zn—O TFTs for Flat Panel Displays”, AM-FPD '08 Digest of Technical Papers, Jul. 2, 2008, pp. 251-252, the Japan Society of Applied Physics. |
| Nakamura.M, “Synthesis of Homologous Compound with New Long-Period Structure”, Nirim Newsletter, Mar. 1, 1995, vol. 150, pp. 1-4. |
| Park.S et al., “42.3: Transparent ZnO Thin Film Transistor for the Application of High Aperture Ratio Bottom Emission AM-OLED Display”, SID Digest '08 : SID International Symposium Digest of Technical Papers, May 20, 2008, vol. 39, pp. 629-632. |
| Orita.M et al., “Mechanism of Electrical Conductivity of Transparent InGaZnO4”, Phys. Rev. B (Physical Review. B), Jan. 15, 2000, vol. 61, No. 3, pp. 1811-1816. |
| Nomura.K et al., “Amorphous Oxide Semiconductors for High-Performance Flexible Thin-Film Transistors”, Jpn. J. Appl. Phys. (Japanese Journal of Applied Physics) , 2006, vol. 45, No. 5B, pp. 4303-4308. |
| Janotti.A et al., “Native Point Defects in ZnO”, Phys. Rev. B (Physical Review. B), Oct. 4, 2007, vol. 76, No. 16, pp. 165202-1-165202-22. |
| Park.J et al., “Electronic Transport Properties of Amorphous Indium-Gallium-Zinc Oxide Semiconductor Upon Exposure to Water”, Appl. Phys. Lett. (Applied Physics Letters) , 2008, vol. 92, pp. 072104-1-072104-3. |
| Hsieh.H et al., “P-29:Modeling of Amorphous Oxide Semiconductor Thin Film Transistors and Subgap Density of States”, SID Digest '08 : SID International Symposium Digest of Technical Papers, May 20, 2008, vol. 39, pp. 1277-1280. |
| Janotti.A et al., “Oxygen Vacancies in ZnO”, Appl. Phys. Lett. (Applied Physics Letters) , 2005, vol. 87, pp. 122102-1-122102-3. |
| Oba.F et al., “Defect energetics in ZnO: A hybrid Hartree-Fock density functional study”, Phys. Rev. B (Physical Review. B), 2008, vol. 77, pp. 245202-1-245202-6. |
| Orita.M et al., “Amorphous transparent conductive oxide InGaO3(ZnO)m (m<4):a Zn4s conductor”, Philosophical Magazine, 2001, vol. 81, No. 5, pp. 501-515. |
| Hosono.H et al., “Working hypothesis to explore novel wide band gap electrically conducting amorphous oxides and examples”, J. Non-Cryst. Solids (Journal of Non-Crystalline Solids), 1996, vol. 198-200, pp. 165-169. |
| Mo.Y et al., “Amorphous Oxide TFT Backplanes for Large Size AMOLED Displays”, IDW '08 : Proceedings of the 6th International Display Workshops, Dec. 3, 2008, pp. 581-584. |
| Kim.S et al., “High-Performance oxide thin film transistors passivated by various gas plasmas”, 214th ECS Meeting, 2008, No. 2317, ECS. |
| Clark.S et al., “First Principles Methods Using CASTEP”, Zeitschrift fur Kristallographie, 2005, vol. 220, pp. 567-570. |
| Lany.S et al., “Dopability, Intrinsic Conductivity, and Nonstoichiometry of Transparent Conducting Oxides”, Phys. Rev. Lett. (Physical Review Letters), Jan. 26, 2007, vol. 98, pp. 045501-1-045501-4. |
| Park.J et al., “Dry etching of ZnO films and plasma-induced damage to optical properties”, J. Vac. Sci. Technol. B (Journal of Vacuum Science & Technology B), Mar. 1, 2003, vol. 21, No. 2, pp. 800-803. |
| Oh.M et al., “Improving the Gate Stability of ZnO Thin-Film Transistors With Aluminum Oxide Dielectric Layers”, J. Electrochem. Soc. (Journal of the Electrochemical Society), 2008, vol. 155, No. 12, pp. H1009-H1014. |
| Ueno.K et al., “Field-Effect Transistor on SrTiO3 With Sputtered Al2O3 Gate Insulator”, Appl. Phys. Lett. (Applied Physics Letters) , Sep. 1, 2003, vol. 83, No. 9, pp. 1755-1757. |
| Chinese Office Action (Application No. 201010116532.3) dated Nov. 6, 2013. |
| Taiwanese Office Action (Application No. 99103855) dated Aug. 14, 2014. |
| Taiwanese Office Action (Application No. 104100540) dated Oct. 8, 2015. |
| Korean Office Action (Application No. 2015-0009080) dated Apr. 18, 2016. |
| Chinese Office Action (Application No. 201510170872.7) dated Mar. 24, 2017. |
| Taiwanese Office Action (Application No. 106138802) dated Jul. 31, 2018. |
| Number | Date | Country | |
|---|---|---|---|
| 20210351206 A1 | Nov 2021 | US |
| Number | Date | Country | |
|---|---|---|---|
| Parent | 12699080 | Feb 2010 | US |
| Child | 13558638 | US |
| Number | Date | Country | |
|---|---|---|---|
| Parent | 16809980 | Mar 2020 | US |
| Child | 17313034 | US | |
| Parent | 16151552 | Oct 2018 | US |
| Child | 16809980 | US | |
| Parent | 15856685 | Dec 2017 | US |
| Child | 16151552 | US | |
| Parent | 15238010 | Aug 2016 | US |
| Child | 15856685 | US | |
| Parent | 14942376 | Nov 2015 | US |
| Child | 15238010 | US | |
| Parent | 14626150 | Feb 2015 | US |
| Child | 14942376 | US | |
| Parent | 14148307 | Jan 2014 | US |
| Child | 14626150 | US | |
| Parent | 13736344 | Jan 2013 | US |
| Child | 14148307 | US | |
| Parent | 13558638 | Jul 2012 | US |
| Child | 13736344 | US |
