Tunnel injectors

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CPC
H01L29/0895

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

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H01L29/0895Tunnel injectors

Industries

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Patents Grantslast 30 patents

Information Patent Grant
Double gate transistor device and method of operating
- Patent number 12,003,231
- Issue date Jun 4, 2024
- Infineon Technologies Austria AG
- Markus Bina
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MIS contact structure with metal oxide conductor
- Patent number 11,843,040
- Issue date Dec 12, 2023
- ACORN SEMI, LLC
- Paul A. Clifton
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating semiconductor device
- Patent number 11,728,429
- Issue date Aug 15, 2023
- Samsung Electronics Co., Ltd.
- Yul Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing semiconductor device
- Patent number 11,688,771
- Issue date Jun 27, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Aryan Afzalian
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field-effect transistor structure and fabrication method
- Patent number 11,621,340
- Issue date Apr 4, 2023
- International Business Machines Corporation
- Clarissa Convertino
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for depinning the Fermi level of a semiconductor at an elect...
- Patent number 11,355,613
- Issue date Jun 7, 2022
- ACORN SEMI, LLC
- Daniel E. Grupp
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Tunneling field effect transistor
- Patent number 11,227,953
- Issue date Jan 18, 2022
- Japan Science and Technology Agency
- Kimihiko Kato
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of fabricating the same
- Patent number 11,222,978
- Issue date Jan 11, 2022
- Samsung Electronics Co., Ltd.
- Yul Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Graphene device, methods of manufacturing and operating the same, a...
- Patent number 11,177,352
- Issue date Nov 16, 2021
- Samsung Electronics Co., Ltd.
- Jinseong Heo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for depinning the fermi level of a semiconductor at an elect...
- Patent number 11,056,569
- Issue date Jul 6, 2021
- ACORN SEMI, LLC
- Daniel E. Grupp
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Insulated gate field effect transistor having passivated schottky b...
- Patent number 11,043,571
- Issue date Jun 22, 2021
- ACORN SEMI, LLC
- Daniel E. Grupp
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for depinning the fermi level of a semiconductor at an elect...
- Patent number 11,018,237
- Issue date May 25, 2021
- ACORN SEMI, LLC
- Daniel E. Grupp
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method thereof
- Patent number 11,018,226
- Issue date May 25, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd
- Aryan Afzalian
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for depinning the Fermi level of a semiconductor at an elect...
- Patent number 10,950,707
- Issue date Mar 16, 2021
- ACORN SEMI, LLC
- Daniel E. Grupp
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for depinning the Fermi level of a semiconductor at an elect...
- Patent number 10,937,880
- Issue date Mar 2, 2021
- ACORN SEMI, LLC
- Daniel E. Grupp
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MIS contact structure with metal oxide conductor
- Patent number 10,872,964
- Issue date Dec 22, 2020
- ACORN SEMI, LLC
- Paul A. Clifton
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Energy-filtered cold electron devices and methods
- Patent number 10,825,920
- Issue date Nov 3, 2020
- Board of Regents, The University of Texas System
- Seong Jin Koh
- B82 - NANO-TECHNOLOGY
Information Patent Grant
InN tunnel junction contacts for P-channel GaN
- Patent number 10,811,501
- Issue date Oct 20, 2020
- Intel Corporation
- Marko Radosavljevic
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Graphene device, methods of manufacturing and operating the same, a...
- Patent number 10,680,066
- Issue date Jun 9, 2020
- Samsung Electronics Co., Ltd.
- Jinseong Heo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Surface area and Schottky barrier height engineering for contact tr...
- Patent number 10,643,894
- Issue date May 5, 2020
- International Business Machines Corporation
- Jody Fronheiser
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Surface area and Schottky barrier height engineering for contact tr...
- Patent number 10,643,893
- Issue date May 5, 2020
- International Business Machines Corporation
- Jody Fronheiser
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Localized tunneling enhancement for semiconductor devices
- Patent number 10,636,875
- Issue date Apr 28, 2020
- Northrop Grumman Systems Corporation
- Yeong-Chang Chou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MIS contact structure with metal oxide conductor
- Patent number 10,553,695
- Issue date Feb 4, 2020
- ACORN SEMI, LLC
- Paul A. Clifton
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Double gate transistor device and method of operating
- Patent number 10,530,360
- Issue date Jan 7, 2020
- Infineon Technologies Austria AG
- Markus Bina
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Energy-filtered cold electron devices and methods
- Patent number 10,529,835
- Issue date Jan 7, 2020
- Seong Jin Koh
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Quantum box device comprising dopants located in a thin semiconduct...
- Patent number 10,522,669
- Issue date Dec 31, 2019
- Commissariat a l'Energie Atomique et Aux Energies Alternatives
- Sylvain Barraud
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Method for depinning the fermi level of a semiconductor at an elect...
- Patent number 10,388,748
- Issue date Aug 20, 2019
- Acorn Technologies, Inc.
- Daniel E. Grupp
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Tunnel field effect transistors
- Patent number 10,374,068
- Issue date Aug 6, 2019
- Infineon Technologies AG
- Harald Gossner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Tunnel field-effect transistor (TFET) with lateral oxidation
- Patent number 10,312,355
- Issue date Jun 4, 2019
- The Board of Regents of the University of Texas System
- Jack C. Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Energy-filtered cold electron devices and methods
- Patent number 10,276,699
- Issue date Apr 30, 2019
- Board of Regents, The University of Texas System
- Seong Jin Koh
- B82 - NANO-TECHNOLOGY

Patents Applicationslast 30 patents

Information Patent Application
DOUBLE GATE TRANSISTOR DEVICE AND METHOD OF OPERATING
- Publication number 20240275379
- Publication date Aug 15, 2024
- Infineon Technologies Austria AG
- Markus Bina
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Tunneling Enabled Feedback FET
- Publication number 20240213321
- Publication date Jun 27, 2024
- IMEC vzw
- Aryan Afzalian
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MIS CONTACT STRUCTURE WITH METAL OXIDE CONDUCTOR
- Publication number 20240072150
- Publication date Feb 29, 2024
- Acorn Semi, LLC
- Paul A. Clifton
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FABRICATING SEMICONDUCTOR DEVICE
- Publication number 20220102555
- Publication date Mar 31, 2022
- Samsung Electronics Co., Ltd.
- Yul LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR DEPINNING THE FERMI LEVEL OF A SEMICONDUCTOR AT AN ELECT...
- Publication number 20210305392
- Publication date Sep 30, 2021
- Acorn Semi, LLC
- Daniel E. Grupp
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
- Publication number 20210280675
- Publication date Sep 9, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Aryan AFZALIAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD-EFFECT TRANSISTOR STRUCTURE AND FABRICATION METHOD
- Publication number 20210143263
- Publication date May 13, 2021
- International Business Machines Corporation
- Clarissa Convertino
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TUNNELING FIELD EFFECT TRANSISTOR
- Publication number 20210005758
- Publication date Jan 7, 2021
- Japan Science and Technology Agency
- Kimihiko KATO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR DEPINNING THE FERMI LEVEL OF A SEMICONDUCTOR AT AN ELECT...
- Publication number 20200273961
- Publication date Aug 27, 2020
- Acorn Semi, LLC
- Daniel E. Grupp
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR DEPINNING THE FERMI LEVEL OF A SEMICONDUCTOR AT AN ELECT...
- Publication number 20200273960
- Publication date Aug 27, 2020
- Acorn Semi, LLC
- Daniel E. Grupp
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR DEPINNING THE FERMI LEVEL OF A SEMICONDUCTOR AT AN ELECT...
- Publication number 20200243662
- Publication date Jul 30, 2020
- Acorn Semi, LLC
- Daniel E. Grupp
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GRAPHENE DEVICE, METHODS OF MANUFACTURING AND OPERATING THE SAME, A...
- Publication number 20200161432
- Publication date May 21, 2020
- Samsung Electronics Co., Ltd.
- Jinseong HEO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MIS CONTACT STRUCTURE WITH METAL OXIDE CONDUCTOR
- Publication number 20200152758
- Publication date May 14, 2020
- Acorn Semi, LLC
- Paul A. Clifton
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DOUBLE GATE TRANSISTOR DEVICE AND METHOD OF OPERATING
- Publication number 20200136608
- Publication date Apr 30, 2020
- Infineon Technologies Austria AG
- Markus Bina
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
ENERGY-FILTERED COLD ELECTRON DEVICES AND METHODS
- Publication number 20200098899
- Publication date Mar 26, 2020
- Board of Regents, The University of Texas System
- Seong Jin KOH
- B82 - NANO-TECHNOLOGY
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20200058738
- Publication date Feb 20, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Aryan AFZALIAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR DEPINNING THE FERMI LEVEL OF A SEMICONDUCTOR AT AN ELECT...
- Publication number 20190334006
- Publication date Oct 31, 2019
- Acorn Semi, LLC
- Daniel E. Grupp
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ENERGY-FILTERED COLD ELECTRON DEVICES AND METHODS
- Publication number 20190214488
- Publication date Jul 11, 2019
- Board of Regents, The University of Texas System
- Seong Jin KOH
- B82 - NANO-TECHNOLOGY
Information Patent Application
InN TUNNEL JUNCTION CONTACTS FOR P-CHANNEL GaN
- Publication number 20190207003
- Publication date Jul 4, 2019
- Intel Corporation
- MARKO RADOSAVLJEVIC
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MIS CONTACT STRUCTURE WITH METAL OXIDE CONDUCTOR
- Publication number 20190067439
- Publication date Feb 28, 2019
- Acorn Technologies, Inc.
- Paul A. Clifton
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Tunneling Junction Transistor
- Publication number 20190035918
- Publication date Jan 31, 2019
- Lhing Gem Kim Shoute
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ENERGY-FILTERED COLD ELECTRON DEVICES AND METHODS
- Publication number 20180323290
- Publication date Nov 8, 2018
- Board of Regents, The University of Texas System
- Seong Jin KOH
- B82 - NANO-TECHNOLOGY
Information Patent Application
TUNNEL FINFET WITH SELF-ALIGNED GATE
- Publication number 20180254340
- Publication date Sep 6, 2018
- GLOBALFOUNDRIES INC.
- EDWARD J. NOWAK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR DEPINNING THE FERMI LEVEL OF A SEMICONDUCTOR AT AN ELECT...
- Publication number 20180166552
- Publication date Jun 14, 2018
- Acorn Technologies, Inc.
- Daniel E. Grupp
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TUNNEL FIELD-EFFECT TRANSISTOR (TFET) WITH LATERAL OXIDATION
- Publication number 20180108761
- Publication date Apr 19, 2018
- The Board of Regents of the University of Texas System
- Jack C. Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR DEPINNING THE FERMI LEVEL OF A SEMICONDUCTOR AT AN ELECT...
- Publication number 20180033862
- Publication date Feb 1, 2018
- Acorn Technologies, Inc.
- Daniel E. Grupp
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GRAPHENE DOUBLE-BARRIER RESONANT TUNNELING DEVICE
- Publication number 20170345898
- Publication date Nov 30, 2017
- Nokia Technologies Oy
- Michael ASTLEY
- B82 - NANO-TECHNOLOGY
Information Patent Application
ENERGY-FILTERED COLD ELECTRON DEVICES AND METHODS
- Publication number 20170338331
- Publication date Nov 23, 2017
- Board of Regents, The University of Texas System
- Seong Jin KOH
- B82 - NANO-TECHNOLOGY
Information Patent Application
Double Gate Transistor Device and Method of Operating
- Publication number 20170250685
- Publication date Aug 31, 2017
- Infineon Technologies Austria AG
- Markus Bina
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GROUP III-NITRIDE COMPOUND HETEROJUNCTION TUNNEL FIELD-EFFECT TRANS...
- Publication number 20170125521
- Publication date May 4, 2017
- UNIVERSITY OF NOTRE DAME DU LAC
- Patrick Fay
- H01 - BASIC ELECTRIC ELEMENTS

Tunnel injectors

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Double gate transistor device and method of operating

MIS contact structure with metal oxide conductor

Method of fabricating semiconductor device

Method for manufacturing semiconductor device

Field-effect transistor structure and fabrication method

Method for depinning the Fermi level of a semiconductor at an elect...

Tunneling field effect transistor

Semiconductor device and method of fabricating the same

Graphene device, methods of manufacturing and operating the same, a...

Method for depinning the fermi level of a semiconductor at an elect...

Insulated gate field effect transistor having passivated schottky b...

Method for depinning the fermi level of a semiconductor at an elect...

Semiconductor device and manufacturing method thereof

Method for depinning the Fermi level of a semiconductor at an elect...

Method for depinning the Fermi level of a semiconductor at an elect...

MIS contact structure with metal oxide conductor

Energy-filtered cold electron devices and methods

InN tunnel junction contacts for P-channel GaN

Graphene device, methods of manufacturing and operating the same, a...

Surface area and Schottky barrier height engineering for contact tr...

Surface area and Schottky barrier height engineering for contact tr...

Localized tunneling enhancement for semiconductor devices

MIS contact structure with metal oxide conductor

Double gate transistor device and method of operating

Energy-filtered cold electron devices and methods

Quantum box device comprising dopants located in a thin semiconduct...

Method for depinning the fermi level of a semiconductor at an elect...

Tunnel field effect transistors

Tunnel field-effect transistor (TFET) with lateral oxidation

Energy-filtered cold electron devices and methods

Patents Applicationslast 30 patents

DOUBLE GATE TRANSISTOR DEVICE AND METHOD OF OPERATING

Tunneling Enabled Feedback FET

MIS CONTACT STRUCTURE WITH METAL OXIDE CONDUCTOR

METHOD OF FABRICATING SEMICONDUCTOR DEVICE

METHOD FOR DEPINNING THE FERMI LEVEL OF A SEMICONDUCTOR AT AN ELECT...

METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

FIELD-EFFECT TRANSISTOR STRUCTURE AND FABRICATION METHOD

TUNNELING FIELD EFFECT TRANSISTOR

METHOD FOR DEPINNING THE FERMI LEVEL OF A SEMICONDUCTOR AT AN ELECT...

METHOD FOR DEPINNING THE FERMI LEVEL OF A SEMICONDUCTOR AT AN ELECT...

METHOD FOR DEPINNING THE FERMI LEVEL OF A SEMICONDUCTOR AT AN ELECT...

GRAPHENE DEVICE, METHODS OF MANUFACTURING AND OPERATING THE SAME, A...

MIS CONTACT STRUCTURE WITH METAL OXIDE CONDUCTOR

DOUBLE GATE TRANSISTOR DEVICE AND METHOD OF OPERATING

ENERGY-FILTERED COLD ELECTRON DEVICES AND METHODS

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

METHOD FOR DEPINNING THE FERMI LEVEL OF A SEMICONDUCTOR AT AN ELECT...

ENERGY-FILTERED COLD ELECTRON DEVICES AND METHODS

InN TUNNEL JUNCTION CONTACTS FOR P-CHANNEL GaN

MIS CONTACT STRUCTURE WITH METAL OXIDE CONDUCTOR

Tunneling Junction Transistor

ENERGY-FILTERED COLD ELECTRON DEVICES AND METHODS

TUNNEL FINFET WITH SELF-ALIGNED GATE

METHOD FOR DEPINNING THE FERMI LEVEL OF A SEMICONDUCTOR AT AN ELECT...

TUNNEL FIELD-EFFECT TRANSISTOR (TFET) WITH LATERAL OXIDATION

METHOD FOR DEPINNING THE FERMI LEVEL OF A SEMICONDUCTOR AT AN ELECT...

GRAPHENE DOUBLE-BARRIER RESONANT TUNNELING DEVICE

ENERGY-FILTERED COLD ELECTRON DEVICES AND METHODS

Double Gate Transistor Device and Method of Operating

GROUP III-NITRIDE COMPOUND HETEROJUNCTION TUNNEL FIELD-EFFECT TRANS...