Two-Phase CCD

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CPC
H01L29/76875

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

Current Industry

H01L29/76875Two-Phase CCD

Industries

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Patents Grantslast 30 patents

Information Patent Grant
Charge detection device and charge detection method, solid-state im...
- Patent number 8,233,065
- Issue date Jul 31, 2012
- Sony Corporation
- Shunsuke Kameda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing a charge coupled device
- Patent number 7,838,344
- Issue date Nov 23, 2010
- Kabushiki Kaisha Toshiba
- Hirokazu Sekine
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Solid-state imaging device
- Patent number 7,488,999
- Issue date Feb 10, 2009
- NEC Electronics Corporation
- Makoto Tanaka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making a planar charge coupled device with edge aligned i...
- Patent number 5,556,801
- Issue date Sep 17, 1996
- Eastman Kodak Company
- Gilbert A. Hawkins
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Charge-coupled device having reduced cross-talk
- Patent number 5,369,293
- Issue date Nov 29, 1994
- U.S. Philips Corporation
- Arie Slob
- G11 - INFORMATION STORAGE
Information Patent Grant
CCD shift register
- Patent number 5,220,185
- Issue date Jun 15, 1993
- Sony Corporation
- Kazushi Wada
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Compact charge-coupled device having a conductive shielding layer
- Patent number 4,881,250
- Issue date Nov 14, 1989
- U.S. Philips Corp.
- Geert J. T. Davids
- G11 - INFORMATION STORAGE
Information Patent Grant
High dynamic range charge-coupled device
- Patent number 4,873,561
- Issue date Oct 10, 1989
- David D. Wen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Charge coupled device for transferring electric charge
- Patent number 4,649,407
- Issue date Mar 10, 1987
- Sanyo Electric Co., Ltd.
- Yuji Kitamura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Charge transfer device having a bent charge transfer channel
- Patent number 4,403,237
- Issue date Sep 6, 1983
- Matsushita Electronics Corporation
- Yoshio Ohkubo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High speed transient recorder systems
- Patent number 4,393,357
- Issue date Jul 12, 1983
- Q-Dot, Inc.
- Thomas E. Linnenbrink
- G11 - INFORMATION STORAGE
Information Patent Grant
Charge-coupled device having a channel and an electrode for changin...
- Patent number 4,381,516
- Issue date Apr 26, 1983
- Matsushita Electric Industrial Co., Ltd.
- Hiroshi Kadota
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Signal compressor apparatus
- Patent number 4,377,755
- Issue date Mar 22, 1983
- The United States of America as represented by the Secretary of the Air Force
- William E. Jensen
- G11 - INFORMATION STORAGE
Information Patent Grant
Charge coupled device improved meander channel serial register
- Patent number 4,371,885
- Issue date Feb 1, 1983
- Hughes Aircraft Company
- William J. Parrish
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making a sloped insulator charge-coupled device
- Patent number 4,364,164
- Issue date Dec 21, 1982
- Westinghouse Electric Corp.
- Nathan Bluzer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Co-planar barrier-type charge coupled device with enhanced storage...
- Patent number 4,365,261
- Issue date Dec 21, 1982
- Texas Instruments Incorporated
- Pallab K. Chatterjee
- G11 - INFORMATION STORAGE
Information Patent Grant
Method of fabricating polysilicon electrodes
- Patent number 4,347,656
- Issue date Sep 7, 1982
- Bell Telephone Laboratories, Incorporated
- George E. Smith
- G11 - INFORMATION STORAGE
Information Patent Grant
Method of making charge-coupled arrangement in the two-phase technique
- Patent number 4,290,187
- Issue date Sep 22, 1981
- Siemens Aktiengesellschaft
- Karl-Ulrich Stein
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Charge transfer signal processing apparatus transversal filter
- Patent number 4,259,598
- Issue date Mar 31, 1981
- General Electric Company
- Jerome J. Tiemann
- G11 - INFORMATION STORAGE
Information Patent Grant
Charge transfer signal processing apparatus
- Patent number 4,259,597
- Issue date Mar 31, 1981
- General Electric Company
- Jerome J. Tiemann
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor CCD transversal filter with controllable threshold level
- Patent number 4,245,199
- Issue date Jan 13, 1981
- Bell Telephone Laboratories, Incorporated
- Paul I. Suciu
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Charge transfer device which has a pair of straight portions joined...
- Patent number 4,242,692
- Issue date Dec 30, 1980
- Sony Corporation
- Yoshiaki Hagiwara
- G11 - INFORMATION STORAGE
Information Patent Grant
Charge coupled device channel crossover circuit
- Patent number 4,237,389
- Issue date Dec 2, 1980
- TRW Inc.
- Reginald A. Allen
- G11 - INFORMATION STORAGE
Information Patent Grant
Charge transfer device stored with fixed information
- Patent number 4,215,357
- Issue date Jul 29, 1980
- Tokyo Shibaura Electric Co., Ltd.
- Susumu Kohyama
- G11 - INFORMATION STORAGE
Information Patent Grant
CTD charge subtraction transversal filter
- Patent number 4,195,273
- Issue date Mar 25, 1980
- Hughes Aircraft Company
- Paul R. Prince
- G11 - INFORMATION STORAGE
Information Patent Grant
Method of making a charge transfer device
- Patent number 4,179,793
- Issue date Dec 25, 1979
- Sony Corporation
- Yoshiaki Hagiwara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Two-phase continuous poly silicon gate CCD
- Patent number 4,156,247
- Issue date May 22, 1979
- Electron Memories & Magnetic Corporation
- John M. Hartman
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
CCD Storage module
- Patent number 4,144,588
- Issue date Mar 13, 1979
- Siemens Aktiengesellschaft
- Ernst Goettler
- G11 - INFORMATION STORAGE
Information Patent Grant
Solid state image sensing device
- Patent number 4,141,024
- Issue date Feb 20, 1979
- Sony Corporation
- Yasuo Kano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor charge coupled device with split electrode configuration
- Patent number 4,126,794
- Issue date Nov 21, 1978
- Bell Telephone Laboratories, Incorporated
- Michael F. Tompsett
- G11 - INFORMATION STORAGE

Patents Applicationslast 30 patents

Information Patent Application
Charge detection device and charge detection method, solid-state im...
- Publication number 20100201861
- Publication date Aug 12, 2010
- SONY CORPORATION
- Shunsuke Kameda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING A CHARGE COUPLED DEVICE
- Publication number 20090181501
- Publication date Jul 16, 2009
- Kabushiki Kaisha Toshiba
- Hirokazu Sekine
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Solid-state imaging device
- Publication number 20070131974
- Publication date Jun 14, 2007
- NEC ELECTRONICS CORPORATION
- Makoto Tanaka
- H01 - BASIC ELECTRIC ELEMENTS

Two-Phase CCD

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Charge detection device and charge detection method, solid-state im...

Method for manufacturing a charge coupled device

Solid-state imaging device

Method of making a planar charge coupled device with edge aligned i...

Charge-coupled device having reduced cross-talk

CCD shift register

Compact charge-coupled device having a conductive shielding layer

High dynamic range charge-coupled device

Charge coupled device for transferring electric charge

Charge transfer device having a bent charge transfer channel

High speed transient recorder systems

Charge-coupled device having a channel and an electrode for changin...

Signal compressor apparatus

Charge coupled device improved meander channel serial register

Method of making a sloped insulator charge-coupled device

Co-planar barrier-type charge coupled device with enhanced storage...

Method of fabricating polysilicon electrodes

Method of making charge-coupled arrangement in the two-phase technique

Charge transfer signal processing apparatus transversal filter

Charge transfer signal processing apparatus

Semiconductor CCD transversal filter with controllable threshold level

Charge transfer device which has a pair of straight portions joined...

Charge coupled device channel crossover circuit

Charge transfer device stored with fixed information

CTD charge subtraction transversal filter

Method of making a charge transfer device

Two-phase continuous poly silicon gate CCD

CCD Storage module

Solid state image sensing device

Semiconductor charge coupled device with split electrode configuration

Patents Applicationslast 30 patents

Charge detection device and charge detection method, solid-state im...

METHOD FOR MANUFACTURING A CHARGE COUPLED DEVICE

Solid-state imaging device