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H01L29/7847

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

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H01L29/7847using a memorization technique

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Patents Grantslast 30 patents

Information Patent Grant
Damage implantation of cap layer
- Patent number 12,154,987
- Issue date Nov 26, 2024
- Texas Instruments Incorporated
- Mahalingam Nandakumar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Strain enhanced SiC power semiconductor device and method of manufa...
- Patent number 12,113,131
- Issue date Oct 8, 2024
- HITACHI ENERGY LTD
- Stephan Wirths
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device structure having dislocation stress memorizati...
- Patent number 12,107,163
- Issue date Oct 1, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Tsai-Jung Ho
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming a semiconductor device involving the use of stre...
- Patent number 11,610,821
- Issue date Mar 21, 2023
- United Semiconductor (Xiamen) Co., Ltd.
- Rui Ju
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including fin structures and manufacturing met...
- Patent number 11,569,387
- Issue date Jan 31, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chun Hsiung Tsai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a FinFET device by implantation through capping l...
- Patent number 11,532,730
- Issue date Dec 20, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd
- Wen-Cheng Lo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Manufacturing method of semiconductor structure
- Patent number 11,367,781
- Issue date Jun 21, 2022
- United Microelectronics Corp.
- Zhenhai Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Formation of dislocations in source and drain regions of FinFET dev...
- Patent number 11,211,455
- Issue date Dec 28, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chun Hsiung Tsai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MOSFETs with multiple dislocation planes
- Patent number 11,158,740
- Issue date Oct 26, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Wei-Yuan Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating a membrane device including membrane having...
- Patent number 11,097,943
- Issue date Aug 24, 2021
- Korea Institute of Science and Technology
- Byung Chui Lee
- B81 - MICRO-STRUCTURAL TECHNOLOGY
Information Patent Grant
Channel strain formation in vertical transport FETS with dummy stre...
- Patent number 11,088,279
- Issue date Aug 10, 2021
- International Business Machines Corporation
- Choonghyun Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Embedded SRAM and methods of forming the same
- Patent number 11,043,501
- Issue date Jun 22, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jhon Jhy Liaw
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing semiconductor device
- Patent number 11,043,579
- Issue date Jun 22, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chih-Hao Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fabrication of vertical field effect transistor structure with stra...
- Patent number 10,950,711
- Issue date Mar 16, 2021
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including fin structures and manufacturing met...
- Patent number 10,937,906
- Issue date Mar 2, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chun Hsiung Tsai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fabrication of vertical field effect transistor structure with stra...
- Patent number 10,930,760
- Issue date Feb 23, 2021
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fabrication of vertical field effect transistor structure with stra...
- Patent number 10,930,759
- Issue date Feb 23, 2021
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for modifying the strain state of a block of a semiconductin...
- Patent number 10,879,083
- Issue date Dec 29, 2020
- Commissariat a l'Energie Atomique et Aux Energies Alternatives
- Sylvain Maitrejean
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure and manufacturing method thereof
- Patent number 10,797,155
- Issue date Oct 6, 2020
- United Microelectronics Corp.
- Zhenhai Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit chip with strained NMOS and PMOS transistors
- Patent number 10,777,680
- Issue date Sep 15, 2020
- STMicroelectronics (Crolles 2) SAS
- Remy Berthelon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Formation of dislocations in source and drain regions of finFET dev...
- Patent number 10,741,642
- Issue date Aug 11, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chun Hsiung Tsai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integration of strained silicon germanium PFET device and silicon N...
- Patent number 10,734,504
- Issue date Aug 4, 2020
- International Business Machines Corporation
- Bruce B. Doris
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dislocation SMT for FinFET device
- Patent number 10,727,319
- Issue date Jul 28, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Wen-Cheng Lo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor having an oxide-isolated strained channel fin on a bulk...
- Patent number 10,720,527
- Issue date Jul 21, 2020
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method thereof
- Patent number 10,720,514
- Issue date Jul 21, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chih-Hao Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for producing a strained layer based on germanium-tin
- Patent number 10,699,902
- Issue date Jun 30, 2020
- Commissariat a l'Energie Atomique et Aux Energies Alternatives
- Vincent Reboud
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Channel strain formation in vertical transport FETS with dummy stre...
- Patent number 10,600,695
- Issue date Mar 24, 2020
- International Business Machines Corporation
- Choonghyun Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fabrication of vertical field effect transistor structure with stra...
- Patent number 10,586,858
- Issue date Mar 10, 2020
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming transistor with dual spacer
- Patent number 10,475,903
- Issue date Nov 12, 2019
- United Microelectronics Corp.
- Chia-Ling Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Embedded SRAM and methods of forming the same
- Patent number 10,468,419
- Issue date Nov 5, 2019
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jhon Jhy Liaw
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR DEVICE STRUCTURE HAVING DISLOCATION STRESS MEMORIZATI...
- Publication number 20240387730
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Tsai-Jung HO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES WITH ENHANCED CARRIER MOBILITY
- Publication number 20240379850
- Publication date Nov 14, 2024
- Taiwan Semiconductor Manufacturing Co., LTD
- Ming-Shuan Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
N-TYPE METAL OXIDE SEMICONDUCTOR TRANSISTOR AND METHOD FOR FABRICAT...
- Publication number 20240088293
- Publication date Mar 14, 2024
- UNITED MICROELECTRONICS CORP.
- Chun-Ya Chiu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SOURCE/DRAIN FEATURES WITH IMPROVED STRAIN PROPERTIES
- Publication number 20230387301
- Publication date Nov 30, 2023
- Taiwan Semiconductor Manufacturing Co., LTD
- Chih-Ching Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20230085469
- Publication date Mar 16, 2023
- Samsung Electronics Co., Ltd.
- Se Min YANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE STRUCTURE HAVING DISLOCATION STRESS MEMORIZATI...
- Publication number 20230064376
- Publication date Mar 2, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Tsai-Jung HO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Source/Drain Features With Improved Strain Properties
- Publication number 20220359752
- Publication date Nov 10, 2022
- Taiwan Semiconductor Manufacturing Co., LTD
- Chih-Ching Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Devices With Enhanced Carrier Mobility
- Publication number 20220310840
- Publication date Sep 29, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ming-Shuan Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Strain Enhanced SiC Power Semiconductor Device and Method of Manufa...
- Publication number 20220302309
- Publication date Sep 22, 2022
- Hitachi Energy Switzerland AG
- Stephan Wirths
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MANUFACTURING METHOD OF SEMICONDUCTOR STRUCTURE
- Publication number 20220278220
- Publication date Sep 1, 2022
- United Microelectronics Corp.
- Zhenhai Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DAMAGE IMPLANTATION OF CAP LAYER
- Publication number 20220102553
- Publication date Mar 31, 2022
- TEXAS INSTRUMENTS INCORPORATED
- Mahalingam Nandakumar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FORMING A SEMICONDUCTOR DEVICE
- Publication number 20220068723
- Publication date Mar 3, 2022
- United Semiconductor (Xiamen) Co., Ltd.
- TAO HU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE INCLUDING FIN STRUCTURES AND MANUFACTURING MET...
- Publication number 20210257493
- Publication date Aug 19, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chun Hsiung TSAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MODIFYING THE STRAIN STATE OF A BLOCK OF A SEMICONDUCTIN...
- Publication number 20210098265
- Publication date Apr 1, 2021
- Commissariat A L'Energie Atomique et Aux Energies Alternatives
- Sylvain MAITREJEAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MANUFACTURING METHOD OF SEMICONDUCTOR STRUCTURE
- Publication number 20200373406
- Publication date Nov 26, 2020
- United Microelectronics Corp.
- Zhenhai Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Dislocation SMT For FinFet Device
- Publication number 20200357900
- Publication date Nov 12, 2020
- Taiwan Semiconductor Manufacturing Company Ltd.
- Wen-Cheng Lo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Formation of Dislocations in Source and Drain Regions of FinFET Dev...
- Publication number 20200350404
- Publication date Nov 5, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chun Hsiung Tsai
- H05 - ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
Information Patent Application
METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
- Publication number 20200350422
- Publication date Nov 5, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chih-Hao WANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Channel Strain Formation in Vertical Transport FETS with Dummy Stre...
- Publication number 20200176333
- Publication date Jun 4, 2020
- International Business Machines Corporation
- Choonghyun Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Fabrication Of Vertical Field Effect Transistor Structure With Stra...
- Publication number 20200091318
- Publication date Mar 19, 2020
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Embedded SRAM and Methods of Forming the Same
- Publication number 20200066735
- Publication date Feb 27, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jhon Jhy Liaw
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT CHIP WITH STRAINED NMOS AND PMOS TRANSISTORS
- Publication number 20190363190
- Publication date Nov 28, 2019
- STMicroelectronics (Crolles 2) SAS
- Remy BERTHELON
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Channel Strain Formation in Vertical Transport FETS with Dummy Stre...
- Publication number 20190363026
- Publication date Nov 28, 2019
- International Business Machines Corporation
- Choonghyun Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMBRANE DEVICE INCLUDING MEMBRANE HAVING WRINKLES FORMED ALONG TRE...
- Publication number 20190322524
- Publication date Oct 24, 2019
- Korea Institute of Science and Technology
- Byung Chul Lee
- B81 - MICRO-STRUCTURAL TECHNOLOGY
Information Patent Application
Embedded SRAM and Methods of Forming the Same
- Publication number 20190244964
- Publication date Aug 8, 2019
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jhon Jhy Liaw
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MOSFETs with Multiple Dislocation Planes
- Publication number 20190245077
- Publication date Aug 8, 2019
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Wei-Yuan Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR HAVING AN OXIDE-ISOLATED STRAINED CHANNEL FIN ON A BULK...
- Publication number 20190207028
- Publication date Jul 4, 2019
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Fabrication Of Vertical Field Effect Transistor Structure With Stra...
- Publication number 20190172929
- Publication date Jun 6, 2019
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR WITH DUAL SPACER AND FORMING METHOD THEREOF
- Publication number 20190157418
- Publication date May 23, 2019
- UNITED MICROELECTRONICS CORP.
- Chia-Ling Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING TRANSISTOR WITH DUAL SPACER
- Publication number 20190157421
- Publication date May 23, 2019
- UNITED MICROELECTRONICS CORP.
- Chia-Ling Wang
- H01 - BASIC ELECTRIC ELEMENTS

using a memorization technique

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Damage implantation of cap layer

Strain enhanced SiC power semiconductor device and method of manufa...

Semiconductor device structure having dislocation stress memorizati...

Method for forming a semiconductor device involving the use of stre...

Semiconductor device including fin structures and manufacturing met...

Method of forming a FinFET device by implantation through capping l...

Manufacturing method of semiconductor structure

Formation of dislocations in source and drain regions of FinFET dev...

MOSFETs with multiple dislocation planes

Method for fabricating a membrane device including membrane having...

Channel strain formation in vertical transport FETS with dummy stre...

Embedded SRAM and methods of forming the same

Method for manufacturing semiconductor device

Fabrication of vertical field effect transistor structure with stra...

Semiconductor device including fin structures and manufacturing met...

Fabrication of vertical field effect transistor structure with stra...

Fabrication of vertical field effect transistor structure with stra...

Method for modifying the strain state of a block of a semiconductin...

Semiconductor structure and manufacturing method thereof

Integrated circuit chip with strained NMOS and PMOS transistors

Formation of dislocations in source and drain regions of finFET dev...

Integration of strained silicon germanium PFET device and silicon N...

Dislocation SMT for FinFET device

Transistor having an oxide-isolated strained channel fin on a bulk...

Semiconductor device and manufacturing method thereof

Process for producing a strained layer based on germanium-tin

Channel strain formation in vertical transport FETS with dummy stre...

Fabrication of vertical field effect transistor structure with stra...

Method of forming transistor with dual spacer

Embedded SRAM and methods of forming the same

Patents Applicationslast 30 patents

SEMICONDUCTOR DEVICE STRUCTURE HAVING DISLOCATION STRESS MEMORIZATI...

SEMICONDUCTOR DEVICES WITH ENHANCED CARRIER MOBILITY

N-TYPE METAL OXIDE SEMICONDUCTOR TRANSISTOR AND METHOD FOR FABRICAT...

SOURCE/DRAIN FEATURES WITH IMPROVED STRAIN PROPERTIES

SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE STRUCTURE HAVING DISLOCATION STRESS MEMORIZATI...

Source/Drain Features With Improved Strain Properties

Semiconductor Devices With Enhanced Carrier Mobility

Strain Enhanced SiC Power Semiconductor Device and Method of Manufa...

MANUFACTURING METHOD OF SEMICONDUCTOR STRUCTURE

DAMAGE IMPLANTATION OF CAP LAYER

METHOD FOR FORMING A SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE INCLUDING FIN STRUCTURES AND MANUFACTURING MET...

METHOD FOR MODIFYING THE STRAIN STATE OF A BLOCK OF A SEMICONDUCTIN...

MANUFACTURING METHOD OF SEMICONDUCTOR STRUCTURE

Dislocation SMT For FinFet Device

Formation of Dislocations in Source and Drain Regions of FinFET Dev...

METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

Channel Strain Formation in Vertical Transport FETS with Dummy Stre...

Fabrication Of Vertical Field Effect Transistor Structure With Stra...

Embedded SRAM and Methods of Forming the Same

INTEGRATED CIRCUIT CHIP WITH STRAINED NMOS AND PMOS TRANSISTORS

Channel Strain Formation in Vertical Transport FETS with Dummy Stre...

MEMBRANE DEVICE INCLUDING MEMBRANE HAVING WRINKLES FORMED ALONG TRE...

Embedded SRAM and Methods of Forming the Same

MOSFETs with Multiple Dislocation Planes

TRANSISTOR HAVING AN OXIDE-ISOLATED STRAINED CHANNEL FIN ON A BULK...

Fabrication Of Vertical Field Effect Transistor Structure With Stra...

TRANSISTOR WITH DUAL SPACER AND FORMING METHOD THEREOF

METHOD OF FORMING TRANSISTOR WITH DUAL SPACER