using capacitive elements

Industry

CPC
G11C17/04

This industry / category may be too specific. Please go to a parent level for more data

Parent Industries

GPHYSICS G11Information storage G11CSTATIC STORES G11C17/00Read-only memories programmable only once Semi-permanent stores

Current Industry

G11C17/04using capacitive elements

Industries

Patents Grantslast 30 patents

Information Patent Grant
Small-area side-capacitor read-only memory device, memory array and...
- Patent number 11,742,039
- Issue date Aug 29, 2023
- Yield Microelectronics Corp.
- Yu Ting Huang
- G11 - INFORMATION STORAGE
Information Patent Grant
One-time programmable memory read-write circuit
- Patent number 11,682,466
- Issue date Jun 20, 2023
- CHANGXIN MEMORY TECHNOLOGIES, INC.
- Xin Li
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory circuit having pseudo ground
- Patent number 10,629,270
- Issue date Apr 21, 2020
- Richtek Technology Corporation
- Isaac Y. Chen
- G11 - INFORMATION STORAGE
Information Patent Grant
Compact three-dimensional mask-programmed read-only memory
- Patent number 10,079,239
- Issue date Sep 18, 2018
- HangZhou HaiCun Information Technology Co., Ltd
- Guobiao Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Highly scalable single-poly non-volatile memory cell
- Patent number 9,640,262
- Issue date May 2, 2017
- eMemory Technology Inc.
- Te-Hsun Hsu
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Level shift driver circuit capable of reducing gate-induced drain l...
- Patent number 9,548,122
- Issue date Jan 17, 2017
- eMemory Technology Inc.
- Po-Hao Huang
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Memory cell and memory device
- Patent number 9,484,109
- Issue date Nov 1, 2016
- The Swatch Group Research and Development Ltd.
- Arnaud Casagrande
- G11 - INFORMATION STORAGE
Information Patent Grant
One time programming memory cell, array structure and operating met...
- Patent number 9,431,111
- Issue date Aug 30, 2016
- eMemory Technology Inc.
- Meng-Yi Wu
- G11 - INFORMATION STORAGE
Information Patent Grant
Non-volatile memory and associated memory array, row decoder, colum...
- Patent number 9,312,009
- Issue date Apr 12, 2016
- eMemory Technology Inc.
- Tzu-Neng Lai
- G11 - INFORMATION STORAGE
Information Patent Grant
E-fuse array circuit
- Patent number 9,007,802
- Issue date Apr 14, 2015
- SK Hynix Inc.
- Sungju Son
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor capacitor
- Patent number 8,384,155
- Issue date Feb 26, 2013
- eMemory Technology Inc.
- Chrong-Jung Lin
- G11 - INFORMATION STORAGE
Information Patent Grant
Single poly EEPROM without separate control gate nor erase regions
- Patent number 8,067,795
- Issue date Nov 29, 2011
- Texas Instruments Incorporated
- Jozef Czeslaw Mitros
- G11 - INFORMATION STORAGE
Information Patent Grant
Read-only memory using linear passive elements
- Patent number 7,423,905
- Issue date Sep 9, 2008
- Sarnoff Corporation
- Michael G. Kane
- G11 - INFORMATION STORAGE
Information Patent Grant
Ferroelectric write once read only memory for archival storage
- Patent number 6,970,370
- Issue date Nov 29, 2005
- Micron Technology, Inc.
- Leonard Forbes
- G11 - INFORMATION STORAGE
Information Patent Grant
Ferroelectric write once read only memory for archival storage
- Patent number 6,952,362
- Issue date Oct 4, 2005
- Micron Technology, Inc.
- Leonard Forbes
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory apparatus with dynamic memory cells having different capacit...
- Patent number 5,706,225
- Issue date Jan 6, 1998
- Siemens Aktiengesellschaft
- Klaus Buchenrieder
- G11 - INFORMATION STORAGE
Information Patent Grant
Device for information storage using field emission
- Patent number 5,675,531
- Issue date Oct 7, 1997
- International Business Machines Corporation
- Gary Miles McClelland
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory based on arrays of capacitors
- Patent number 5,410,504
- Issue date Apr 25, 1995
- Calvin B. Ward
- G11 - INFORMATION STORAGE
Information Patent Grant
Integrated circuit comprising a programmable cell
- Patent number 5,086,331
- Issue date Feb 4, 1992
- U.S. Philips Corp.
- Cornelis D. Hartgring
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor memory circuit
- Patent number 5,079,746
- Issue date Jan 7, 1992
- Fujitsu Limited
- Noriaki Sato
- G11 - INFORMATION STORAGE
Information Patent Grant
Capacitively coupled read-only memory
- Patent number 5,020,025
- Issue date May 28, 1991
- Advanced Micro Devices, Inc.
- Michael Nix
- G11 - INFORMATION STORAGE
Information Patent Grant
Non-volatile memory device including a micro-mechanical storage ele...
- Patent number 4,979,149
- Issue date Dec 18, 1990
- LGZ Landis & Gyr Zug AG
- Radivoje Popovic
- G11 - INFORMATION STORAGE
Information Patent Grant
CCD read only memory
- Patent number 4,903,097
- Issue date Feb 20, 1990
- Hughes Aircraft Company
- Greg Nash
- G11 - INFORMATION STORAGE
Information Patent Grant
Phyllosilicate electrets and a method for their manufacture
- Patent number 4,808,849
- Issue date Feb 28, 1989
- Canadian Patents and Development Limited/Societe Canadienne des Brevets et d'...
- Ion I. Inculet
- G11 - INFORMATION STORAGE
Information Patent Grant
Peristaltic electrostatic binary device
- Patent number 4,794,370
- Issue date Dec 27, 1988
- Bos-Knox Ltd.
- George R. Simpson
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Programmable semiconductor read only memory device
- Patent number 4,782,466
- Issue date Nov 1, 1988
- Fujitsu Limited
- Satoru Yamaguchi
- G11 - INFORMATION STORAGE
Information Patent Grant
Electrostatic binary switching and memory devices
- Patent number 4,736,202
- Issue date Apr 5, 1988
- Bos-Knox, Ltd.
- George R. Simpson
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Method of fabricating a CCD read only memory utilizing dual-level j...
- Patent number 4,592,130
- Issue date Jun 3, 1986
- Hughes Aircraft Company
- Greg Nash
- G11 - INFORMATION STORAGE
Information Patent Grant
Non-volatile memory cell using a crystalline storage element with c...
- Patent number 4,535,349
- Issue date Aug 13, 1985
- International Business Machines Corporation
- Zeev A. Weinberg
- G11 - INFORMATION STORAGE
Information Patent Grant
Electret device
- Patent number 4,390,800
- Issue date Jun 28, 1983
- Tokyo Shibaura Denki Kabushiki Kaisha
- Masamichi Tanaka
- G11 - INFORMATION STORAGE

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR MEMORY DEVICES AND METHODS OF MANUFACTURING THEREOF
- Publication number 20240387406
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Meng-Han Lin
- G11 - INFORMATION STORAGE
Information Patent Application
SMALL-AREA SIDE-CAPACITOR READ-ONLY MEMORY DEVICE, MEMORY ARRAY AND...
- Publication number 20230230646
- Publication date Jul 20, 2023
- YIELD MICROELECTRONICS CORP.
- YU TING HUANG
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR MEMORY DEVICES AND METHODS OF MANUFACTURING THEREOF
- Publication number 20220310537
- Publication date Sep 29, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Meng-Han Lin
- G11 - INFORMATION STORAGE
Information Patent Application
One-Time Programmable Memory Read-Write Circuit
- Publication number 20220215891
- Publication date Jul 7, 2022
- CHANGXIN MEMORY TECHNOLOGIES, INC
- Xin LI
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY CIRCUIT HAVING PSEUDO GROUND
- Publication number 20190378577
- Publication date Dec 12, 2019
- RICHTEK TECHNOLOGY CORPORATION
- Isaac Y. Chen
- G11 - INFORMATION STORAGE
Information Patent Application
ONE TIME PROGRAMMING MEMORY CELL, ARRAY STRUCTURE AND OPERATING MET...
- Publication number 20160013193
- Publication date Jan 14, 2016
- EMEMORY TECHNOLOGY INC.
- Meng-Yi Wu
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY CELL AND MEMORY DEVICE
- Publication number 20150124512
- Publication date May 7, 2015
- Arnaud CASAGRANDE
- G11 - INFORMATION STORAGE
Information Patent Application
E-FUSE ARRAY CIRCUIT
- Publication number 20140071779
- Publication date Mar 13, 2014
- Sungju Son
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR CAPACITOR, ONE TIME PROGRAMMABLE MEMORY CELL AND FABR...
- Publication number 20120099361
- Publication date Apr 26, 2012
- Ememory Technology Inc.
- Chrong-Jung Lin
- G11 - INFORMATION STORAGE
Information Patent Application
ELECTRONIC TAG
- Publication number 20110025466
- Publication date Feb 3, 2011
- NOVALIA LTD.
- Kate Stone
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
Single poly EEPROM without separate control gate nor erase regions
- Publication number 20080225593
- Publication date Sep 18, 2008
- Texas Instruments Inc.
- Jozef Czeslaw Mitros
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR CAPACITOR, ONE TIME PROGRAMMABLE MEMORY CELL AND FABR...
- Publication number 20080019165
- Publication date Jan 24, 2008
- EMEMORY TECHNOLOGY INC.
- Chrong-Jung Lin
- G11 - INFORMATION STORAGE
Information Patent Application
READ-ONLY MEMORY USING LINEAR PASSIVE ELEMENTS
- Publication number 20070211511
- Publication date Sep 13, 2007
- Sarnoff Corporation
- Michael G. Kane
- G11 - INFORMATION STORAGE
Information Patent Application
Ferroelectric write once read only memory for archival storage
- Publication number 20040165412
- Publication date Aug 26, 2004
- Micron Technology, Inc.
- Leonard Forbes
- G11 - INFORMATION STORAGE
Information Patent Application
FERROELECTRIC WRITE ONCE READ ONLY MEMORY FOR ARCHIVAL STORAGE
- Publication number 20030235066
- Publication date Dec 25, 2003
- Micron Technology, Inc.
- Leonard Forbes
- G11 - INFORMATION STORAGE

using capacitive elements

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Small-area side-capacitor read-only memory device, memory array and...

One-time programmable memory read-write circuit

Memory circuit having pseudo ground

Compact three-dimensional mask-programmed read-only memory

Highly scalable single-poly non-volatile memory cell

Level shift driver circuit capable of reducing gate-induced drain l...

Memory cell and memory device

One time programming memory cell, array structure and operating met...

Non-volatile memory and associated memory array, row decoder, colum...

E-fuse array circuit

Semiconductor capacitor

Single poly EEPROM without separate control gate nor erase regions

Read-only memory using linear passive elements

Ferroelectric write once read only memory for archival storage

Ferroelectric write once read only memory for archival storage

Memory apparatus with dynamic memory cells having different capacit...

Device for information storage using field emission

Memory based on arrays of capacitors

Integrated circuit comprising a programmable cell

Semiconductor memory circuit

Capacitively coupled read-only memory

Non-volatile memory device including a micro-mechanical storage ele...

CCD read only memory

Phyllosilicate electrets and a method for their manufacture

Peristaltic electrostatic binary device

Programmable semiconductor read only memory device

Electrostatic binary switching and memory devices

Method of fabricating a CCD read only memory utilizing dual-level j...

Non-volatile memory cell using a crystalline storage element with c...

Electret device

Patents Applicationslast 30 patents

SEMICONDUCTOR MEMORY DEVICES AND METHODS OF MANUFACTURING THEREOF

SMALL-AREA SIDE-CAPACITOR READ-ONLY MEMORY DEVICE, MEMORY ARRAY AND...

SEMICONDUCTOR MEMORY DEVICES AND METHODS OF MANUFACTURING THEREOF

One-Time Programmable Memory Read-Write Circuit

MEMORY CIRCUIT HAVING PSEUDO GROUND

ONE TIME PROGRAMMING MEMORY CELL, ARRAY STRUCTURE AND OPERATING MET...

MEMORY CELL AND MEMORY DEVICE

E-FUSE ARRAY CIRCUIT

SEMICONDUCTOR CAPACITOR, ONE TIME PROGRAMMABLE MEMORY CELL AND FABR...

ELECTRONIC TAG

Single poly EEPROM without separate control gate nor erase regions

SEMICONDUCTOR CAPACITOR, ONE TIME PROGRAMMABLE MEMORY CELL AND FABR...

READ-ONLY MEMORY USING LINEAR PASSIVE ELEMENTS

Ferroelectric write once read only memory for archival storage

FERROELECTRIC WRITE ONCE READ ONLY MEMORY FOR ARCHIVAL STORAGE