using full isolation by porous oxide silicon

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CPC
H01L21/76245

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

Current Industry

H01L21/76245using full isolation by porous oxide silicon

Industries

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Patents Grantslast 30 patents

Information Patent Grant
RF devices with enhanced performance and methods of forming the sam...
- Patent number 12,125,739
- Issue date Oct 22, 2024
- Qorvo US, Inc.
- Julio C. Costa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
RF devices with enhanced performance and methods of forming the sam...
- Patent number 12,046,505
- Issue date Jul 23, 2024
- Qorvo US, Inc.
- Julio C. Costa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
RF devices with enhanced performance and methods of forming the sam...
- Patent number 12,009,251
- Issue date Jun 11, 2024
- Qorvo US, Inc.
- Julio C. Costa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
RF devices with enhanced performance and methods of forming the sam...
- Patent number 11,978,659
- Issue date May 7, 2024
- Qorvo US, Inc.
- Julio C. Costa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
RF devices with enhanced performance and methods of forming the sam...
- Patent number 11,948,830
- Issue date Apr 2, 2024
- Qorvo US, Inc.
- Julio C. Costa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming semiconductor-on-insulator (SOI) substrate
- Patent number 11,710,656
- Issue date Jul 25, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Cheng-Ta Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
RF devices with enhanced performance and methods of forming the sam...
- Patent number 11,705,362
- Issue date Jul 18, 2023
- Qorvo US, Inc.
- Julio C. Costa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
RF devices with enhanced performance and methods of forming the sam...
- Patent number 11,664,269
- Issue date May 30, 2023
- Qorvo US, Inc.
- Julio C. Costa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
RF devices with enhanced performance and methods of forming the sam...
- Patent number 11,631,610
- Issue date Apr 18, 2023
- Qorvo US, Inc.
- Julio C. Costa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
RF devices with enhanced performance and methods of forming the sam...
- Patent number 11,476,152
- Issue date Oct 18, 2022
- Qorvo US, Inc.
- Julio C. Costa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
RF devices with enhanced performance and methods of forming the sam...
- Patent number 11,355,385
- Issue date Jun 7, 2022
- Qorvo US, Inc.
- Julio C. Costa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
RF devices with enhanced performance and methods of forming the sam...
- Patent number 11,322,389
- Issue date May 3, 2022
- Qorvo US, Inc.
- Julio C. Costa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
RF devices with enhanced performance and methods of forming the sam...
- Patent number 11,289,364
- Issue date Mar 29, 2022
- Qorvo US, Inc.
- Julio C. Costa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
RF devices with enhanced performance and methods of forming the sam...
- Patent number 11,257,709
- Issue date Feb 22, 2022
- Qorvo US, Inc.
- Julio C. Costa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
RF devices with enhanced performance and methods of forming the sam...
- Patent number 11,195,747
- Issue date Dec 7, 2021
- Qorvo US, Inc.
- Julio C. Costa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
RF devices with enhanced performance and methods of forming the sam...
- Patent number 11,081,385
- Issue date Aug 3, 2021
- Qorvo US, Inc.
- Julio C. Costa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and semiconductor wafer including a porous lay...
- Patent number 10,714,377
- Issue date Jul 14, 2020
- Infineon Technologies AG
- Ingo Muri
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low-cost SOI FinFET technology
- Patent number 10,438,858
- Issue date Oct 8, 2019
- Internationa Business Machines Corporation
- Stephen W. Bedell
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low-cost SOI FinFET technology
- Patent number 9,899,274
- Issue date Feb 20, 2018
- International Business Machines Corporation
- Stephen W. Bedell
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and structure to make fins with different fin heights and no...
- Patent number 9,385,023
- Issue date Jul 5, 2016
- GLOBALFOUNDRIES Inc.
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing a structure of semiconductor-on-insulator...
- Patent number 8,178,426
- Issue date May 15, 2012
- STMicroelectronics S.A.
- Aomar Halimaoui
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for forming germanium-on-insulator semiconductor structures...
- Patent number 7,928,436
- Issue date Apr 19, 2011
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Strained semiconductor-on-insulator by Si:C combined with porous pr...
- Patent number 7,833,884
- Issue date Nov 16, 2010
- International Business Machines Corporation
- Stephen W. Bedell
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Formation of SOI by oxidation of silicon with engineered porosity g...
- Patent number 7,772,096
- Issue date Aug 10, 2010
- International Machines Corporation
- Joel P. DeSouza
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for forming germanium-on-insulator semiconductor structures...
- Patent number 7,767,541
- Issue date Aug 3, 2010
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SOI by oxidation of porous silicon
- Patent number 7,566,482
- Issue date Jul 28, 2009
- International Business Machines Corporation
- Kwang Su Choe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Formation of a silicon germanium-on-insulator structure by oxidatio...
- Patent number 7,125,458
- Issue date Oct 24, 2006
- International Business Machines Corporation
- Stephen W. Bedell
- C22 - METALLURGY FERROUS OR NON-FERROUS ALLOYS TREATMENT OF ALLOYS OR NON-FER...
Information Patent Grant
Method for fabricating shallow trenches
- Patent number 7,045,437
- Issue date May 16, 2006
- The Regents of the University of California
- Ya-Hong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Shallow trench isolation planarized by wet etchback and chemical me...
- Patent number 6,869,858
- Issue date Mar 22, 2005
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Syun-Ming Jang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for producing a buried layer of material in another material
- Patent number 6,808,967
- Issue date Oct 26, 2004
- Commissariat a l'Energie Atomique
- Bernard Aspar
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
RF DEVICES WITH ENHANCED PERFORMANCE AND METHODS OF FORMING THE SAM...
- Publication number 20230163021
- Publication date May 25, 2023
- Qorvo US, Inc.
- Julio C. Costa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RADIO-FREQUENCY INTEGRATED CIRCUITS (RFICS) INCLUDING A POROSIFIED...
- Publication number 20230088569
- Publication date Mar 23, 2023
- QUALCOMM Incorporated
- Ranadeep DUTTA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING SEMICONDUCTOR-ON-INSULATOR (SOI) SUBSTRATE
- Publication number 20220336265
- Publication date Oct 20, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Cheng-Ta Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING SEMICONDUCTOR-ON-INSULATOR (SOI) SUBSTRATE
- Publication number 20210098281
- Publication date Apr 1, 2021
- Taiwan Semiconductor Manufacturing Co., LTD
- Cheng-Ta Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RF DEVICES WITH ENHANCED PERFORMANCE AND METHODS OF FORMING THE SAM...
- Publication number 20190326159
- Publication date Oct 24, 2019
- Qorvo US, Inc.
- Julio C. Costa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device and Semiconductor Wafer Including a Porous Lay...
- Publication number 20190074212
- Publication date Mar 7, 2019
- INFINEON TECHNOLOGIES AG
- Ingo Muri
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOW-COST SOI FINFET TECHNOLOGY
- Publication number 20180082910
- Publication date Mar 22, 2018
- International Business Machines Corporation
- Stephen W. Bedell
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOW-COST SOI FINFET TECHNOLOGY
- Publication number 20160276226
- Publication date Sep 22, 2016
- International Business Machines Corporation
- Stephen W. Bedell
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOW COST SOI SUBSTRATES FOR MONOLITHIC SOLAR CELLS
- Publication number 20100221867
- Publication date Sep 2, 2010
- International Business Machines Corporation
- Stephen W. Bedell
- Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMA...
Information Patent Application
FORMATION OF SOI BY OXIDATION OF SILICON WITH ENGINEERED POROSITY G...
- Publication number 20100006985
- Publication date Jan 14, 2010
- International Business Machines Corporation
- Joel P. DeSouza
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRAINED SEMICONDUCTOR-ON-INSULATOR BY Si:C COMBINED WITH POROUS PR...
- Publication number 20090117720
- Publication date May 7, 2009
- International Business Machines Corporation
- Stephen W. Bedell
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FABRICATING METHOD FOR SILICON ON INSULATOR AND STRUCTURE THEREOF
- Publication number 20090039428
- Publication date Feb 12, 2009
- ProMos Technologies Inc.
- Hsiao-Che Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS FOR FORMING GERMANIUM-ON-INSULATOR SEMICONDUCTOR STRUCTURES...
- Publication number 20080211054
- Publication date Sep 4, 2008
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING A STRUCTURE OF SEMICONDUCTOR-ON-INSULATOR...
- Publication number 20080197447
- Publication date Aug 21, 2008
- STMicroelectronics S.A.
- Aomar Halimaoui
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods for forming germanium-on-insulator semiconductor structures...
- Publication number 20070093036
- Publication date Apr 26, 2007
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
AN ISOLATION REGION FOR USE IN A SEMICONDUCTOR DEVICE
- Publication number 20060289962
- Publication date Dec 28, 2006
- Ya-Hong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SOI by oxidation of porous silicon
- Publication number 20050067294
- Publication date Mar 31, 2005
- International Business Machines Corporation
- Kwang Su Choe
- C25 - ELECTROLYTIC OR ELECTROPHORETIC PROCESSES APPARATUS THEREFOR
Information Patent Application
Formation of a silicon germanium-on-insulator structure by oxidatio...
- Publication number 20050056352
- Publication date Mar 17, 2005
- International Business Machines Corporation
- Stephen W. Bedell
- C22 - METALLURGY FERROUS OR NON-FERROUS ALLOYS TREATMENT OF ALLOYS OR NON-FER...
Information Patent Application
Semiconductor-on-insulator article and method of making same
- Publication number 20040245571
- Publication date Dec 9, 2004
- Zhiyuan Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device with insulator and manufacturing method therefor
- Publication number 20040016987
- Publication date Jan 29, 2004
- Mitsubishi Denki Kabushiki Kaisha
- Mahito Sawada
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Shallow trench isolation planarized by wet etchback and chemical me...
- Publication number 20030194848
- Publication date Oct 16, 2003
- TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY
- Syun-Ming Jang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Process for production of semiconductor substrate
- Publication number 20030087503
- Publication date May 8, 2003
- Canon Kabushiki Kaisha
- Kiyofumi Sakaguchi
- Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMA...

using full isolation by porous oxide silicon

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

RF devices with enhanced performance and methods of forming the sam...

RF devices with enhanced performance and methods of forming the sam...

RF devices with enhanced performance and methods of forming the sam...

RF devices with enhanced performance and methods of forming the sam...

RF devices with enhanced performance and methods of forming the sam...

Method of forming semiconductor-on-insulator (SOI) substrate

RF devices with enhanced performance and methods of forming the sam...

RF devices with enhanced performance and methods of forming the sam...

RF devices with enhanced performance and methods of forming the sam...

RF devices with enhanced performance and methods of forming the sam...

RF devices with enhanced performance and methods of forming the sam...

RF devices with enhanced performance and methods of forming the sam...

RF devices with enhanced performance and methods of forming the sam...

RF devices with enhanced performance and methods of forming the sam...

RF devices with enhanced performance and methods of forming the sam...

RF devices with enhanced performance and methods of forming the sam...

Semiconductor device and semiconductor wafer including a porous lay...

Low-cost SOI FinFET technology

Low-cost SOI FinFET technology

Method and structure to make fins with different fin heights and no...

Method for manufacturing a structure of semiconductor-on-insulator...

Methods for forming germanium-on-insulator semiconductor structures...

Strained semiconductor-on-insulator by Si:C combined with porous pr...

Formation of SOI by oxidation of silicon with engineered porosity g...

Methods for forming germanium-on-insulator semiconductor structures...

SOI by oxidation of porous silicon

Formation of a silicon germanium-on-insulator structure by oxidatio...

Method for fabricating shallow trenches

Shallow trench isolation planarized by wet etchback and chemical me...

Method for producing a buried layer of material in another material

Patents Applicationslast 30 patents

RF DEVICES WITH ENHANCED PERFORMANCE AND METHODS OF FORMING THE SAM...

RADIO-FREQUENCY INTEGRATED CIRCUITS (RFICS) INCLUDING A POROSIFIED...

METHOD OF FORMING SEMICONDUCTOR-ON-INSULATOR (SOI) SUBSTRATE

METHOD OF FORMING SEMICONDUCTOR-ON-INSULATOR (SOI) SUBSTRATE

RF DEVICES WITH ENHANCED PERFORMANCE AND METHODS OF FORMING THE SAM...

Semiconductor Device and Semiconductor Wafer Including a Porous Lay...

LOW-COST SOI FINFET TECHNOLOGY

LOW-COST SOI FINFET TECHNOLOGY

LOW COST SOI SUBSTRATES FOR MONOLITHIC SOLAR CELLS

FORMATION OF SOI BY OXIDATION OF SILICON WITH ENGINEERED POROSITY G...

STRAINED SEMICONDUCTOR-ON-INSULATOR BY Si:C COMBINED WITH POROUS PR...

FABRICATING METHOD FOR SILICON ON INSULATOR AND STRUCTURE THEREOF

METHODS FOR FORMING GERMANIUM-ON-INSULATOR SEMICONDUCTOR STRUCTURES...

METHOD FOR MANUFACTURING A STRUCTURE OF SEMICONDUCTOR-ON-INSULATOR...

Methods for forming germanium-on-insulator semiconductor structures...

AN ISOLATION REGION FOR USE IN A SEMICONDUCTOR DEVICE

SOI by oxidation of porous silicon

Formation of a silicon germanium-on-insulator structure by oxidatio...

Semiconductor-on-insulator article and method of making same

Semiconductor device with insulator and manufacturing method therefor

Shallow trench isolation planarized by wet etchback and chemical me...

Process for production of semiconductor substrate