using lateral overgrowth techniques

Industry

CPC
H01L21/76248

This industry / category may be too specific. Please go to a parent level for more data

Parent Industries

HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

Current Industry

H01L21/76248using lateral overgrowth techniques

Industries

Please log in for detailed analytics

Patents Grantslast 30 patents

Information Patent Grant
Oxidized cavity structures within and under semiconductor devices
- Patent number 11,410,872
- Issue date Aug 9, 2022
- GLOBALFOUNDRIES U.S. Inc.
- Siva P. Adusumilli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Epitaxially fabricated heterojunction bipolar transistors
- Patent number 11,205,717
- Issue date Dec 21, 2021
- Intel Corporation
- Sansaptak Dasgupta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gallium nitride (GaN) transistor structures on a substrate
- Patent number 11,195,944
- Issue date Dec 7, 2021
- Intel Corporation
- Han Wui Then
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Devices with backside metal structures and methods of formation the...
- Patent number 11,011,409
- Issue date May 18, 2021
- Infineon Technologies AG
- Oliver Hellmund
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for producing a semiconductor chip and semiconductor chip
- Patent number 11,004,876
- Issue date May 11, 2021
- OSRAM OLED GmbH
- Christoph Eichler
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SOI substrate manufacturing method and SOI substrate
- Patent number 10,804,137
- Issue date Oct 13, 2020
- Huawei Technologies Co., Ltd.
- Yourui HuangFu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Devices with backside metal structures and methods of formation the...
- Patent number 10,535,553
- Issue date Jan 14, 2020
- Infineon Technologies AG
- Oliver Hellmund
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Isolated semiconductor layer in bulk wafer by localized silicon epi...
- Patent number 10,516,019
- Issue date Dec 24, 2019
- Texas Instruments Incorporated
- Daniel Nelson Carothers
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon island structure and method of fabricating same
- Patent number 10,490,441
- Issue date Nov 26, 2019
- NEXCHIP SEMICONDUCTOR CORPORATION
- Tiansong Pu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Making a defect free fin based device in lateral epitaxy overgrowth...
- Patent number 10,475,706
- Issue date Nov 12, 2019
- Intel Corporation
- Niti Goel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure
- Patent number 10,424,599
- Issue date Sep 24, 2019
- Semiconductor Manufacturing International (Shanghai) Corporation
- Ji Quan Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Buried insulator regions and methods of formation thereof
- Patent number 10,410,911
- Issue date Sep 10, 2019
- Infineon Technologies AG
- Carsten Schaeffer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for producing a semiconductor chip and semiconductor chip
- Patent number 10,396,106
- Issue date Aug 27, 2019
- Osram Opto Semiconductors GmbH
- Christoph Eichler
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of wafer thinning and realizing backside metal structures
- Patent number 10,325,804
- Issue date Jun 18, 2019
- Infineon Technologies AG
- Oliver Hellmund
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with buried cavities and dielectric support st...
- Patent number 10,312,258
- Issue date Jun 4, 2019
- Infineon Technologies AG
- Johannes Laven
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Isolated semiconductor layer in bulk wafer by localized silicon epi...
- Patent number 10,032,863
- Issue date Jul 24, 2018
- Texas Instruments Incorporated
- Daniel Nelson Carothers
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Devices with backside metal structures and methods of formation the...
- Patent number 9,960,076
- Issue date May 1, 2018
- Infineon Technologies AG
- Oliver Hellmund
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Forming zig-zag trench structure to prevent aspect ratio trapping d...
- Patent number 9,947,532
- Issue date Apr 17, 2018
- GLOBALFOUNDRIES Inc.
- Judson R. Holt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dielectric isolated SiGe fin on bulk substrate
- Patent number 9,941,175
- Issue date Apr 10, 2018
- International Business Machines Corporation
- Huiming Bu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a semiconductor substrate with buried cavities an...
- Patent number 9,935,126
- Issue date Apr 3, 2018
- Infineon Technologies AG
- Johannes Georg Laven
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure and fabrication method thereof
- Patent number 9,929,182
- Issue date Mar 27, 2018
- Semiconductor Manufacturing International (Shanghai) Corporation
- Ji Quan Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Substrates with buried isolation layers and methods of formation th...
- Patent number 9,875,926
- Issue date Jan 23, 2018
- Infineon Technologies AG
- Iris Moder
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing semiconductor device and semiconductor device
- Patent number 9,761,708
- Issue date Sep 12, 2017
- Renesas Electronics Corporation
- Tetsuya Iida
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor body with a buried material layer and method
- Patent number 9,412,813
- Issue date Aug 9, 2016
- Infineon Technologies Austria AG
- Hans-Joachim Schulze
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing semiconductor device and semiconductor device
- Patent number 9,355,890
- Issue date May 31, 2016
- Renesas Electronics Corporation
- Tetsuya Iida
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Isolated semiconductor layer in bulk wafer by localized silicon epi...
- Patent number 9,330,959
- Issue date May 3, 2016
- Texas Instruments Incorporated
- Daniel Nelson Carothers
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor body with a buried material layer and method
- Patent number 8,975,151
- Issue date Mar 10, 2015
- Infineon Technologies Austria AG
- Hans-Joachim Schulze
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
IIIOxNy on single crystal SOI substrate and III n growth platform
- Patent number 8,835,955
- Issue date Sep 16, 2014
- Translucent, Inc.
- Erdem Arkun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor-on-insulator (SOI) structure and method of forming th...
- Patent number 8,350,269
- Issue date Jan 8, 2013
- International Business Machines Corporation
- Subramanian S. Iyer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor-on-insulator (SOI) structure and method of forming th...
- Patent number 8,227,304
- Issue date Jul 24, 2012
- International Business Machines Corporation
- Subramanian S. Iyer
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Silicon-On-Oxide-On-Silicon
- Publication number 20220130866
- Publication date Apr 28, 2022
- Board of Regents, The University of Texas System
- Alexander A. Demkov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FABRICATING GERMANIUM/SILICON ON INSULATOR IN RADIO FREQ...
- Publication number 20210249300
- Publication date Aug 12, 2021
- Indian Institute of Technology Bombay
- Udayan Ganguly
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
OXIDIZED CAVITY STRUCTURES WITHIN AND UNDER SEMICONDUCTOR DEVICES
- Publication number 20200176304
- Publication date Jun 4, 2020
- GLOBALFOUNDRIES INC.
- Siva P. ADUSUMILLI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Devices with Backside Metal Structures and Methods of Formation The...
- Publication number 20200098617
- Publication date Mar 26, 2020
- INFINEON TECHNOLOGIES AG
- Oliver Hellmund
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR PRODUCING A SEMICONDUCTOR CHIP AND SEMICONDUCTOR CHIP
- Publication number 20190355768
- Publication date Nov 21, 2019
- Osram Opto Semiconductors GmbH
- Christoph EICHLER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Devices with Backside Metal Structures and Methods of Formation The...
- Publication number 20180233399
- Publication date Aug 16, 2018
- INFINEON TECHNOLOGIES AG
- Oliver Hellmund
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE
- Publication number 20180175068
- Publication date Jun 21, 2018
- Semiconductor Manufacturing International (Shanghai) Corporation
- Ji Quan LIU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Buried Insulator Regions and Methods of Formation Thereof
- Publication number 20180166324
- Publication date Jun 14, 2018
- INFINEON TECHNOLOGIES AG
- Carsten Schaeffer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of Wafer Thinning and Realizing Backside Metal Structures
- Publication number 20180144974
- Publication date May 24, 2018
- INFINEON TECHNOLOGIES AG
- Oliver Hellmund
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Devices with Backside Metal Structures and Methods of Formation The...
- Publication number 20180040504
- Publication date Feb 8, 2018
- INFINEON TECHNOLOGIES AG
- Oliver Hellmund
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAKING A DEFECT FREE FIN BASED DEVICE IN LATERAL EPITAXY OVERGROWTH...
- Publication number 20170154981
- Publication date Jun 1, 2017
- Intel Corporation
- Niti Goel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DIELECTRIC ISOLATED SiGe FIN ON BULK SUBSTRATE
- Publication number 20170098584
- Publication date Apr 6, 2017
- International Business Machines Corporation
- Huiming Bu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of Forming a Semiconductor Substrate With Buried Cavities an...
- Publication number 20160322386
- Publication date Nov 3, 2016
- INFINEON TECHNOLOGIES AG
- Johannes Laven
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of Forming a Semiconductor Substrate With Buried Cavities an...
- Publication number 20160071759
- Publication date Mar 10, 2016
- INFINEON TECHNOLOGIES AG
- Johannes Georg Laven
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
P-FET WITH GRADED SILICON-GERMANIUM CHANNEL
- Publication number 20150270344
- Publication date Sep 24, 2015
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MAKING A SEMICONDUCTOR LAYER HAVING AT LEAST TWO DIFFEREN...
- Publication number 20140370666
- Publication date Dec 18, 2014
- COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENE. ALT.
- Maud VINET
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MAKING A TRANSITOR
- Publication number 20140370668
- Publication date Dec 18, 2014
- COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENE. ALT.
- Heimanu Niebojewski
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR BODY WITH A BURIED MATERIAL LAYER AND METHOD
- Publication number 20140017874
- Publication date Jan 16, 2014
- Infineon Technologies Austria AG
- Hans-Joachim Schulze
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE
- Publication number 20130207228
- Publication date Aug 15, 2013
- RENESAS ELECTRONICS CORPORATION
- Tetsuya IIDA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR BODY WITH A BURIED MATERIAL LAYER
- Publication number 20120223420
- Publication date Sep 6, 2012
- Infineon Technologies Austria AG
- Hans-Joachim Schulze
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR-ON-INSULATOR (SOI) STRUCTURE AND METHOD OF FORMING TH...
- Publication number 20120205742
- Publication date Aug 16, 2012
- International Business Machines Corporation
- Subramanian S. Iyer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
IIIOxNy ON SINGLE CRYSTAL SOI SUBSTRATE AND III n GROWTH PLATFORM
- Publication number 20120104443
- Publication date May 3, 2012
- Andrew Clark
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR-ON-INSULATOR (SOI) STRUCTURE AND METHOD OF FORMING TH...
- Publication number 20110204443
- Publication date Aug 25, 2011
- International Business Machines Corporation
- Subramanian S. Iyer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR BODY WITH A BURIED MATERIAL LAYER AND METHOD
- Publication number 20110147883
- Publication date Jun 23, 2011
- Infineon Technologies Austria AG
- Hans-Joachim Schulze
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for manufacturing semiconductor device with trenches in subs...
- Publication number 20060154438
- Publication date Jul 13, 2006
- Daisuke Kishimoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor array and method for manufacturing a semiconductor array
- Publication number 20060094202
- Publication date May 4, 2006
- ATMEL Germany GmbH
- Christoph Bromberger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Epitaxial siox barrier/insulation layer
- Publication number 20060003500
- Publication date Jan 5, 2006
- Chia-Gee Wang
- B82 - NANO-TECHNOLOGY
Information Patent Application
Method for epitaxial growth of a gallium nitride film separated fro...
- Publication number 20050217565
- Publication date Oct 6, 2005
- Hacene Lahreche
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Substrate and manufacturing method therefor
- Publication number 20040048091
- Publication date Mar 11, 2004
- Nobuhiko Sato
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Formation of silicon on insulator (SOI) devices as add-on modules f...
- Publication number 20020192956
- Publication date Dec 19, 2002
- Isik C. Kizilyalli
- H01 - BASIC ELECTRIC ELEMENTS

using lateral overgrowth techniques

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Oxidized cavity structures within and under semiconductor devices

Epitaxially fabricated heterojunction bipolar transistors

Gallium nitride (GaN) transistor structures on a substrate

Devices with backside metal structures and methods of formation the...

Method for producing a semiconductor chip and semiconductor chip

SOI substrate manufacturing method and SOI substrate

Devices with backside metal structures and methods of formation the...

Isolated semiconductor layer in bulk wafer by localized silicon epi...

Silicon island structure and method of fabricating same

Making a defect free fin based device in lateral epitaxy overgrowth...

Semiconductor structure

Buried insulator regions and methods of formation thereof

Method for producing a semiconductor chip and semiconductor chip

Method of wafer thinning and realizing backside metal structures

Semiconductor device with buried cavities and dielectric support st...

Isolated semiconductor layer in bulk wafer by localized silicon epi...

Devices with backside metal structures and methods of formation the...

Forming zig-zag trench structure to prevent aspect ratio trapping d...

Dielectric isolated SiGe fin on bulk substrate

Method of forming a semiconductor substrate with buried cavities an...

Semiconductor structure and fabrication method thereof

Substrates with buried isolation layers and methods of formation th...

Method of manufacturing semiconductor device and semiconductor device

Semiconductor body with a buried material layer and method

Method of manufacturing semiconductor device and semiconductor device

Isolated semiconductor layer in bulk wafer by localized silicon epi...

Semiconductor body with a buried material layer and method

IIIOxNy on single crystal SOI substrate and III n growth platform

Semiconductor-on-insulator (SOI) structure and method of forming th...

Semiconductor-on-insulator (SOI) structure and method of forming th...

Patents Applicationslast 30 patents

Silicon-On-Oxide-On-Silicon

METHOD FOR FABRICATING GERMANIUM/SILICON ON INSULATOR IN RADIO FREQ...

OXIDIZED CAVITY STRUCTURES WITHIN AND UNDER SEMICONDUCTOR DEVICES

Devices with Backside Metal Structures and Methods of Formation The...

METHOD FOR PRODUCING A SEMICONDUCTOR CHIP AND SEMICONDUCTOR CHIP

Devices with Backside Metal Structures and Methods of Formation The...

SEMICONDUCTOR STRUCTURE

Buried Insulator Regions and Methods of Formation Thereof

Method of Wafer Thinning and Realizing Backside Metal Structures

Devices with Backside Metal Structures and Methods of Formation The...

MAKING A DEFECT FREE FIN BASED DEVICE IN LATERAL EPITAXY OVERGROWTH...

DIELECTRIC ISOLATED SiGe FIN ON BULK SUBSTRATE

Method of Forming a Semiconductor Substrate With Buried Cavities an...

Method of Forming a Semiconductor Substrate With Buried Cavities an...

P-FET WITH GRADED SILICON-GERMANIUM CHANNEL

METHOD OF MAKING A SEMICONDUCTOR LAYER HAVING AT LEAST TWO DIFFEREN...

METHOD OF MAKING A TRANSITOR

SEMICONDUCTOR BODY WITH A BURIED MATERIAL LAYER AND METHOD

METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE

SEMICONDUCTOR BODY WITH A BURIED MATERIAL LAYER

SEMICONDUCTOR-ON-INSULATOR (SOI) STRUCTURE AND METHOD OF FORMING TH...

IIIOxNy ON SINGLE CRYSTAL SOI SUBSTRATE AND III n GROWTH PLATFORM

SEMICONDUCTOR-ON-INSULATOR (SOI) STRUCTURE AND METHOD OF FORMING TH...

SEMICONDUCTOR BODY WITH A BURIED MATERIAL LAYER AND METHOD

Method for manufacturing semiconductor device with trenches in subs...

Semiconductor array and method for manufacturing a semiconductor array

Epitaxial siox barrier/insulation layer

Method for epitaxial growth of a gallium nitride film separated fro...

Substrate and manufacturing method therefor

Formation of silicon on insulator (SOI) devices as add-on modules f...