using molten solvents

Industry

CPC
C30B19/02

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CCHEMISTRY METALLURGY C30Crystal growth C30BSINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL REFINING BY ZONE-MELTING OF MATERIAL PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH D... C30B19/00Liquid-phase epitaxial-layer growth

Current Industry

C30B19/02using molten solvents

Industries

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Patents Grantslast 30 patents

Information Patent Grant
Group 13 (III) nitride thick layer formed on an underlying layer ha...
- Patent number 11,473,212
- Issue date Oct 18, 2022
- NGK Insulators, Ltd.
- Makoto Iwai
- C30 - CRYSTAL GROWTH
Information Patent Grant
SiC crucible, SiC sintered body, and method of producing SiC single...
- Patent number 11,440,849
- Issue date Sep 13, 2022
- Shin-Etsu Chemical Co., Ltd.
- Naofumi Shinya
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for producing group III nitride crystal and seed substrate
- Patent number 11,377,757
- Issue date Jul 5, 2022
- Panasonic Holdings Corporation
- Yoshio Okayama
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for producing a group III nitride semiconductor by controlli...
- Patent number 11,280,024
- Issue date Mar 22, 2022
- Toyoda Gosei Co., Ltd.
- Takayuki Sato
- C30 - CRYSTAL GROWTH
Information Patent Grant
Group III nitride substrate and method for producing group III nitr...
- Patent number 11,248,310
- Issue date Feb 15, 2022
- PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.
- Yoshio Okayama
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of manufacturing a group III-nitride crystal comprising a nu...
- Patent number 11,220,759
- Issue date Jan 11, 2022
- Osaka University
- Yusuke Mori
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of forming a GaN single crystal comprising disposing a nucle...
- Patent number 10,975,492
- Issue date Apr 13, 2021
- SLT TECHNOLOGIES, INC.
- Mark Philip D'Evelyn
- C30 - CRYSTAL GROWTH
Information Patent Grant
Underlying substrate including a seed crystal layer of a group 13 n...
- Patent number 10,947,638
- Issue date Mar 16, 2021
- NGK INSULATORS, LTD.
- Takayuki Hirao
- C30 - CRYSTAL GROWTH
Information Patent Grant
Production method for group III nitride crystal
- Patent number 10,927,476
- Issue date Feb 23, 2021
- Osaka University
- Yusuke Mori
- C30 - CRYSTAL GROWTH
Information Patent Grant
Manufacturing method of III-V compound crystal and manufacturing me...
- Patent number 10,910,511
- Issue date Feb 2, 2021
- Osaka University
- Yusuke Mori
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Optical quality diamond material
- Patent number 10,851,471
- Issue date Dec 1, 2020
- Element Six Technologies Limited
- Herman Philip Godfried
- C01 - INORGANIC CHEMISTRY
Information Patent Grant
Free-standing substrate comprising polycrystalline group 13 element...
- Patent number 10,804,432
- Issue date Oct 13, 2020
- NGK Insulators, Ltd.
- Katsuhiro Imai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Free-standing substrate comprising polycrystalline group 13 element...
- Patent number 10,734,548
- Issue date Aug 4, 2020
- NGK Insulators, Ltd.
- Katsuhiro Imai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Polycrystalline gallium nitride self-supported substrate and light...
- Patent number 10,707,373
- Issue date Jul 7, 2020
- NGK Insulators, Ltd.
- Morimichi Watanabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for producing Group III nitride semiconductor, seed substrat...
- Patent number 10,693,032
- Issue date Jun 23, 2020
- Toyoda Gosei Co., Ltd.
- Miki Moriyama
- C30 - CRYSTAL GROWTH
Information Patent Grant
Silicon-based molten composition and manufacturing method of SiC si...
- Patent number 10,662,547
- Issue date May 26, 2020
- LG Chem, Ltd.
- Chan Yeup Chung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lead oxychloride, infrared nonlinear optical crystal, and preparati...
- Patent number 10,626,519
- Issue date Apr 21, 2020
- XINJIANG TECHNICAL INSTITUTE OF PHYSICS & CHEMISTRY, CHINESE ACADEMY OF SCIENCES
- Shilie Pan
- C01 - INORGANIC CHEMISTRY
Information Patent Grant
Process for large-scale ammonothermal manufacturing of semipolar ga...
- Patent number 10,604,865
- Issue date Mar 31, 2020
- SLT TECHNOLOGIES, INC.
- Mark P. D'Evelyn
- C30 - CRYSTAL GROWTH
Information Patent Grant
Epitaxial substrate for semiconductor elements, semiconductor eleme...
- Patent number 10,580,646
- Issue date Mar 3, 2020
- NGK Insulators, Ltd.
- Mikiya Ichimura
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method for manufacturing group 13 nitride crystal and group 13 nitr...
- Patent number 10,538,858
- Issue date Jan 21, 2020
- SCIOCS COMPANY LIMITED
- Masahiro Hayashi
- C30 - CRYSTAL GROWTH
Information Patent Grant
Preparation method and application of sodium barium fluoroborate bi...
- Patent number 10,487,419
- Issue date Nov 26, 2019
- XINJIANG TECHNICAL INSTITUTE OF PHYSICS AND CHEMISTRY, CHINESE ACADEMY OF SCI...
- Shilie Pan
- C01 - INORGANIC CHEMISTRY
Information Patent Grant
Alumina substrate
- Patent number 10,458,041
- Issue date Oct 29, 2019
- TDK Corporation
- Kazuhito Yamasawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SiC single crystal and method for producing same
- Patent number 10,450,671
- Issue date Oct 22, 2019
- Toyota Jidosha Kabushiki Kaisha
- Hironori Daikoku
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Oriented alumina substrate for epitaxial growth
- Patent number 10,435,815
- Issue date Oct 8, 2019
- NGK Insulators, Ltd.
- Morimichi Watanabe
- C04 - CEMENTS CONCRETE ARTIFICIAL STONE CERAMICS REFRACTORIES
Information Patent Grant
Oriented alumina substrate for epitaxial growth
- Patent number 10,435,816
- Issue date Oct 8, 2019
- NGK Insulators, Ltd.
- Morimichi Watanabe
- C04 - CEMENTS CONCRETE ARTIFICIAL STONE CERAMICS REFRACTORIES
Information Patent Grant
Epitaxial substrate for semiconductor elements, semiconductor eleme...
- Patent number 10,418,239
- Issue date Sep 17, 2019
- NGK Insulators, Ltd.
- Mikiya Ichimura
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Epitaxial substrate for semiconductor elements, semiconductor eleme...
- Patent number 10,410,859
- Issue date Sep 10, 2019
- NGK Insulators, Ltd.
- Mikiya Ichimura
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method for producing Group III nitride semiconductor including grow...
- Patent number 10,329,687
- Issue date Jun 25, 2019
- Toyoda Gosei Co., Ltd.
- Miki Moriyama
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method for manufacturing group-III nitride semiconductor crystal su...
- Patent number 10,309,036
- Issue date Jun 4, 2019
- Osaka University
- Yusuke Mori
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Alumina substrate
- Patent number 10,294,585
- Issue date May 21, 2019
- TDK Corporation
- Kazuhito Yamasawa
- C30 - CRYSTAL GROWTH

Patents Applicationslast 30 patents

Information Patent Application
METAL OXIDE MANUFACTURING DEVICE AND METAL OXIDE MANUFACTURING METHOD
- Publication number 20250034750
- Publication date Jan 30, 2025
- DIC CORPORATION
- Hideyuki MURATA
- C30 - CRYSTAL GROWTH
Information Patent Application
LAMINATE HAVING GROUP 13 ELEMENT NITRIDE SINGLE CRYSTAL SUBSTRATE
- Publication number 20240401238
- Publication date Dec 5, 2024
- NGK Insulators, Ltd.
- Kentaro NONAKA
- C30 - CRYSTAL GROWTH
Information Patent Application
SINGLE-CRYSTAL DIAMOND AND DIAMOND COMPOSITE CONTAINING THE SAME
- Publication number 20240183069
- Publication date Jun 6, 2024
- Sumitomo Electric Industries, Ltd.
- Yoshiki NISHIBAYASHI
- C01 - INORGANIC CHEMISTRY
Information Patent Application
GROUP III NITRIDE CRYSTAL, GROUP III NITRIDE SEMICONDUCTOR, GROUP I...
- Publication number 20230399770
- Publication date Dec 14, 2023
- Panasonic Intellectual Property Management Co., Ltd.
- AKIO UETA
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR PRODUCING A GROUP III NITRIDE SEMICONDUCTOR
- Publication number 20230257902
- Publication date Aug 17, 2023
- Toyoda Gosei Co., Ltd.
- Takayuki SATO
- C30 - CRYSTAL GROWTH
Information Patent Application
FREE-STANDING SUBSTRATE FOR EPITAXIAL CRYSTAL GROWTH, AND FUNCTIONA...
- Publication number 20230119023
- Publication date Apr 20, 2023
- NGK Insulators, Ltd.
- Masahiro SAKAI
- C30 - CRYSTAL GROWTH
Information Patent Application
GROUP 13 ELEMENT NITRIDE CRYSTAL LAYER, SELF-SUPPORTING SUBSTRATE,...
- Publication number 20220275532
- Publication date Sep 1, 2022
- NGK Insulators, Ltd.
- Suguru NOGUCHI
- C30 - CRYSTAL GROWTH
Information Patent Application
GROUP III NITRIDE SUBSTRATE AND METHOD FOR PRODUCING GROUP III NITR...
- Publication number 20220119984
- Publication date Apr 21, 2022
- Panasonic Intellectual Property Management Co., Ltd.
- YOSHIO OKAYAMA
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR PRODUCING A GROUP III NITRIDE SEMICONDUCTOR
- Publication number 20220081800
- Publication date Mar 17, 2022
- Toyoda Gosei Co., Ltd.
- Takayuki SATO
- C30 - CRYSTAL GROWTH
Information Patent Application
OPTICAL QUALITY DIAMOND MATERIAL
- Publication number 20210115591
- Publication date Apr 22, 2021
- ELEMENT SIX TECHNOLOGIES LIMITED
- HERMAN PHILIP GODFRIED
- C01 - INORGANIC CHEMISTRY
Information Patent Application
GROUP 13 ELEMENT NITRIDE LAYER, FREE-STANDING SUBSTRATE, FUNCTIONAL...
- Publication number 20210013366
- Publication date Jan 14, 2021
- NGK Insulators, Ltd.
- Masahiro SAKAI
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
METHOD FOR PRODUCING A GROUP III NITRIDE SEMICONDUCTOR
- Publication number 20200299857
- Publication date Sep 24, 2020
- Toyoda Gosei Co., Ltd.
- Takayuki SATO
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD OF MANUFACTURING GROUP-III NITRIDE CRYSTAL
- Publication number 20200263317
- Publication date Aug 20, 2020
- OSAKA UNIVERSITY
- Yusuke MORI
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD OF MANUFACTURING A GARNET TYPE CRYSTAL
- Publication number 20190309439
- Publication date Oct 10, 2019
- Shin-Etsu Chemical Co., Ltd.
- Toshiaki WATANABE
- G02 - OPTICS
Information Patent Application
PRODUCTION METHOD FOR GROUP III NITRIDE CRYSTAL
- Publication number 20190271096
- Publication date Sep 5, 2019
- OSAKA UNIVERSITY
- Yusuke MORI
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD ASSOCIATED WITH A CRYSTALLINE COMPOSITION AND WAFER
- Publication number 20190249328
- Publication date Aug 15, 2019
- Soraa, Inc.
- Mark Philip D'Evelyn
- C30 - CRYSTAL GROWTH
Information Patent Application
OPTICAL QUALITY DIAMOND MATERIAL
- Publication number 20190055669
- Publication date Feb 21, 2019
- ELEMENT SIX TECHNOLOGIES LIMITED
- HERMAN PHILIP GODFRIED
- C30 - CRYSTAL GROWTH
Information Patent Application
EPITAXIAL SUBSTRATE FOR SEMICONDUCTOR ELEMENTS, SEMICONDUCTOR ELEME...
- Publication number 20190027359
- Publication date Jan 24, 2019
- NGK Insulators, Ltd.
- Mikiya ICHIMURA
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
EPITAXIAL SUBSTRATE FOR SEMICONDUCTOR ELEMENTS, SEMICONDUCTOR ELEME...
- Publication number 20180247809
- Publication date Aug 30, 2018
- NGK Insulators, Ltd.
- Mikiya ICHIMURA
- C30 - CRYSTAL GROWTH
Information Patent Application
EPITAXIAL SUBSTRATE FOR SEMICONDUCTOR ELEMENTS, SEMICONDUCTOR ELEME...
- Publication number 20180247810
- Publication date Aug 30, 2018
- NGK Insulators, Ltd.
- Mikiya ICHIMURA
- C30 - CRYSTAL GROWTH
Information Patent Application
UNDERLYING SUBSTRATE, METHOD OF MANUFACTURING UNDERLYING SUBSTRATE,...
- Publication number 20180202067
- Publication date Jul 19, 2018
- NGK Insulators, Ltd.
- Takayuki HIRAO
- C30 - CRYSTAL GROWTH
Information Patent Application
Epitaxial Quartz Homeotypes Crystal Growth On Beta Quartz For Press...
- Publication number 20180195202
- Publication date Jul 12, 2018
- Daniel Smith
- C30 - CRYSTAL GROWTH
Information Patent Application
ORIENTED ALUMINA SUBSTRATE FOR EPITAXIAL GROWTH
- Publication number 20180179665
- Publication date Jun 28, 2018
- NGK Insulators, Ltd.
- Morimichi WATANABE
- C01 - INORGANIC CHEMISTRY
Information Patent Application
ORIENTED ALUMINA SUBSTRATE FOR EPITAXIAL GROWTH
- Publication number 20180179664
- Publication date Jun 28, 2018
- NGK Insulators, Ltd.
- Morimichi WATANABE
- C30 - CRYSTAL GROWTH
Information Patent Application
Method for Producing Group III Nitride Semiconductor, Seed Substrat...
- Publication number 20180097142
- Publication date Apr 5, 2018
- Toyoda Gosei Co., Ltd.
- Miki MORIYAMA
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR PRODUCING GROUP III NITRIDE SEMICONDUCTOR
- Publication number 20180066378
- Publication date Mar 8, 2018
- Toyoda Gosei Co., Ltd.
- Miki MORIYAMA
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR MANUFACTURING GROUP-III NITRIDE SEMICONDUCTOR CRYSTAL SU...
- Publication number 20180038010
- Publication date Feb 8, 2018
- Osaka University
- Yusuke MORI
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD OF LIQUID-PHASE EPITAXIAL GROWTH OF LEAD ZIRCONATE TITANATE...
- Publication number 20170314156
- Publication date Nov 2, 2017
- Quest Integrated, LLC
- Vincent Fratello
- C30 - CRYSTAL GROWTH
Information Patent Application
GROUP III NITRIDE SUBSTRATE AND METHOD FOR PRODUCING GROUP III NITR...
- Publication number 20170275780
- Publication date Sep 28, 2017
- Panasonic Intellectual Property Management Co., Ltd.
- YOSHIO OKAYAMA
- C30 - CRYSTAL GROWTH
Information Patent Application
Group 13 Element Nitride Crystal Layer and Function Element
- Publication number 20170268125
- Publication date Sep 21, 2017
- NGK Insulators, Ltd.
- Makoto Iwai
- C30 - CRYSTAL GROWTH

using molten solvents

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Group 13 (III) nitride thick layer formed on an underlying layer ha...

SiC crucible, SiC sintered body, and method of producing SiC single...

Method for producing group III nitride crystal and seed substrate

Method for producing a group III nitride semiconductor by controlli...

Group III nitride substrate and method for producing group III nitr...

Method of manufacturing a group III-nitride crystal comprising a nu...

Method of forming a GaN single crystal comprising disposing a nucle...

Underlying substrate including a seed crystal layer of a group 13 n...

Production method for group III nitride crystal

Manufacturing method of III-V compound crystal and manufacturing me...

Optical quality diamond material

Free-standing substrate comprising polycrystalline group 13 element...

Free-standing substrate comprising polycrystalline group 13 element...

Polycrystalline gallium nitride self-supported substrate and light...

Method for producing Group III nitride semiconductor, seed substrat...

Silicon-based molten composition and manufacturing method of SiC si...

Lead oxychloride, infrared nonlinear optical crystal, and preparati...

Process for large-scale ammonothermal manufacturing of semipolar ga...

Epitaxial substrate for semiconductor elements, semiconductor eleme...

Method for manufacturing group 13 nitride crystal and group 13 nitr...

Preparation method and application of sodium barium fluoroborate bi...

Alumina substrate

SiC single crystal and method for producing same

Oriented alumina substrate for epitaxial growth

Oriented alumina substrate for epitaxial growth

Epitaxial substrate for semiconductor elements, semiconductor eleme...

Epitaxial substrate for semiconductor elements, semiconductor eleme...

Method for producing Group III nitride semiconductor including grow...

Method for manufacturing group-III nitride semiconductor crystal su...

Alumina substrate

Patents Applicationslast 30 patents

METAL OXIDE MANUFACTURING DEVICE AND METAL OXIDE MANUFACTURING METHOD

LAMINATE HAVING GROUP 13 ELEMENT NITRIDE SINGLE CRYSTAL SUBSTRATE

SINGLE-CRYSTAL DIAMOND AND DIAMOND COMPOSITE CONTAINING THE SAME

GROUP III NITRIDE CRYSTAL, GROUP III NITRIDE SEMICONDUCTOR, GROUP I...

METHOD FOR PRODUCING A GROUP III NITRIDE SEMICONDUCTOR

FREE-STANDING SUBSTRATE FOR EPITAXIAL CRYSTAL GROWTH, AND FUNCTIONA...

GROUP 13 ELEMENT NITRIDE CRYSTAL LAYER, SELF-SUPPORTING SUBSTRATE,...

GROUP III NITRIDE SUBSTRATE AND METHOD FOR PRODUCING GROUP III NITR...

METHOD FOR PRODUCING A GROUP III NITRIDE SEMICONDUCTOR

OPTICAL QUALITY DIAMOND MATERIAL

GROUP 13 ELEMENT NITRIDE LAYER, FREE-STANDING SUBSTRATE, FUNCTIONAL...

METHOD FOR PRODUCING A GROUP III NITRIDE SEMICONDUCTOR

METHOD OF MANUFACTURING GROUP-III NITRIDE CRYSTAL

METHOD OF MANUFACTURING A GARNET TYPE CRYSTAL

PRODUCTION METHOD FOR GROUP III NITRIDE CRYSTAL

METHOD ASSOCIATED WITH A CRYSTALLINE COMPOSITION AND WAFER

OPTICAL QUALITY DIAMOND MATERIAL

EPITAXIAL SUBSTRATE FOR SEMICONDUCTOR ELEMENTS, SEMICONDUCTOR ELEME...

EPITAXIAL SUBSTRATE FOR SEMICONDUCTOR ELEMENTS, SEMICONDUCTOR ELEME...

EPITAXIAL SUBSTRATE FOR SEMICONDUCTOR ELEMENTS, SEMICONDUCTOR ELEME...

UNDERLYING SUBSTRATE, METHOD OF MANUFACTURING UNDERLYING SUBSTRATE,...

Epitaxial Quartz Homeotypes Crystal Growth On Beta Quartz For Press...

ORIENTED ALUMINA SUBSTRATE FOR EPITAXIAL GROWTH

ORIENTED ALUMINA SUBSTRATE FOR EPITAXIAL GROWTH

Method for Producing Group III Nitride Semiconductor, Seed Substrat...

METHOD FOR PRODUCING GROUP III NITRIDE SEMICONDUCTOR

METHOD FOR MANUFACTURING GROUP-III NITRIDE SEMICONDUCTOR CRYSTAL SU...

METHOD OF LIQUID-PHASE EPITAXIAL GROWTH OF LEAD ZIRCONATE TITANATE...

GROUP III NITRIDE SUBSTRATE AND METHOD FOR PRODUCING GROUP III NITR...

Group 13 Element Nitride Crystal Layer and Function Element