using predeposition of impurities into the semiconductor surface

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

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H01L21/2252using predeposition of impurities into the semiconductor surface

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Patents Grantslast 30 patents

Information Patent Grant
Ultrawide bandgap semiconductor devices including magnesium germani...
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- SILANNA UV TECHNOLOGIES PTE LTD
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- C30 - CRYSTAL GROWTH
Information Patent Grant
Detection method of metal impurity in wafer
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- Issue date Oct 1, 2024
- ZING SEMICONDUCTOR CORPORATION
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- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ultrawide bandgap semiconductor devices including magnesium germani...
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- Issue date Dec 26, 2023
- SILANNA UV TECHNOLOGIES PTE LTD
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Information Patent Grant
Selective low temperature epitaxial deposition process
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- Issue date Dec 12, 2023
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- H01 - BASIC ELECTRIC ELEMENTS
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Information Patent Grant
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Method of utilizing a degassing chamber to reduce arsenic outgassin...
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Forming epitaxial structures in fin field effect transistors
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Semiconductor device including stressed source/drain, method of man...
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VFET bottom epitaxy formed with anchors
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Vertically stacked transistors in a pin
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Method and apparatus for depositing a monolayer on a three dimensio...
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Information Patent Grant
Capped ALD films for doping fin-shaped channel regions of 3-D IC tr...
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Information Patent Grant
Method of fabricating image sensor
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Methods and systems for dopant activation using microwave radiation
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Femtosecond laser-induced formation of submicrometer spikes on a se...
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Semiconductor device with deep diffusion region
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IC unit and method of manufacturing the same, and electronic device...
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Information Patent Grant
Three-dimensional memory device having vertical semiconductor chann...
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Information Patent Grant
IC unit and methond of manufacturing the same, and electronic devic...
- Patent number 10,629,498
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- Institute of Microelectronics, Chinese Academy of Sciences
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Information Patent Grant
IC unit and method of manufacturing the same, and electronic device...
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- Issue date Mar 24, 2020
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Capped ALD films for doping fin-shaped channel regions of 3-D IC tr...
- Patent number 10,559,468
- Issue date Feb 11, 2020
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Patents Applicationslast 30 patents

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SELECTIVE LOW TEMPERATURE EPITAXIAL DEPOSITION PROCESS
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FIELD EFFECT TRANSISTOR WITH ADJUSTABLE EFFECTIVE GATE LENGTH
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TUNNEL FIELD EFFECT TRANSISTOR DEVICES
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ULTRAWIDE BANDGAP SEMICONDUCTOR DEVICES INCLUDING MAGNESIUM GERMAN...
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Forming Epitaxial Structures in Fin Field Effect Transistors
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- Taiwan Semiconductor Manufacturing Co., LTD
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VERTICAL STORAGE DEVICE, METHOD OF MANUFACTURING THE SAME, AND ELEC...
- Publication number 20220285559
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- Institute of Microelectronics, Chinese Academy of Sciences
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- H01 - BASIC ELECTRIC ELEMENTS
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SELECTIVE LOW TEMPERATURE EPITAXIAL DEPOSITION PROCESS
- Publication number 20220238650
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- H01 - BASIC ELECTRIC ELEMENTS
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DETECTION METHOD OF METAL IMPURITY IN WAFER
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- ZING SEMICONDUCTOR CORPORATION
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- H01 - BASIC ELECTRIC ELEMENTS
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VERTICALLY STACKED TRANSISTORS IN A FIN
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METHOD FOR PRODUCING PILLAR-SHAPED SEMICONDUCTOR DEVICE
- Publication number 20200373415
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- Unisantis Electronics Singapore PTE Ltd.
- Fujio MASUOKA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods and Systems for Dopant Activation Using Microwave Radiation
- Publication number 20200135468
- Publication date Apr 30, 2020
- Taiwan Semiconductor Manufacturing Company Limited
- CHUN-HSIUNG TSAI
- H05 - ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
Information Patent Application
Forming Epitaxial Structures in Fin Field Effect Transistors
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- Taiwan Semiconductor Manufacturing Co., LTD
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CAPPED ALD FILMS FOR DOPING FIN-SHAPED CHANNEL REGIONS OF 3-D IC TR...
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VFET Bottom Epitaxy Formed with Anchors
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- Publication date Oct 10, 2019
- International Business Machines Corporation
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- H01 - BASIC ELECTRIC ELEMENTS
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IC UNIT AND METHOND OF MANUFACTURING THE SAME, AND ELECTRONIC DEVIC...
- Publication number 20190287865
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- Institute of Microelectronics, Chinese Academy of Sciences
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- B82 - NANO-TECHNOLOGY
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Forming Epitaxial Structures in Fin Field Effect Transistors
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- Taiwan Semiconductor Manufacturing Co., LTD
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VFET Bottom Epitaxy Formed with Anchors
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- International Business Machines Corporation
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SEMICONDUCTOR DEVICE WITH DEEP DIFFUSION REGION
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- INFINEON TECHNOLOGIES AG
- Thomas WUEBBEN
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DEGASSING CHAMBER FOR ARSENIC RELATED PROCESSES
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- Xinyu BAO
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METHOD OF PREVENTING BULK SILICON CHARGE TRANSFER FOR NANOWIRE AND...
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- TOKYO ELECTRON LIMITED
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METHOD AND STRUCTURE TO FORM VERTICAL FIN BJT WITH GRADED SIGE BAS...
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METHODS OF FORMING A VERTICAL TRANSISTOR DEVICE WITH A CHANNEL STRU...
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CAPPED ALD FILMS FOR DOPING FIN-SHAPED CHANNEL REGIONS OF 3-D IC TR...
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Systems and Methods for Bidirectional Device Fabrication
- Publication number 20180226254
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- IDEAL POWER INC.
- Richard A. Blanchard
- H01 - BASIC ELECTRIC ELEMENTS
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Method of Manufacturing Semiconductor Devices by Using Epitaxy and...
- Publication number 20180226471
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- INFINEON TECHNOLOGIES AG
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VERTICAL TRANSISTORS WITH IMPROVED TOP SOURCE/DRAIN JUNCTIONS
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- International Business Machines Corporation
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- H01 - BASIC ELECTRIC ELEMENTS

using predeposition of impurities into the semiconductor surface

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Ultrawide bandgap semiconductor devices including magnesium germani...

Detection method of metal impurity in wafer

Ultrawide bandgap semiconductor devices including magnesium germani...

Selective low temperature epitaxial deposition process

Vertical storage device, method of manufacturing the same, and elec...

Vertically stacked transistors in a fin

Method of utilizing a degassing chamber to reduce arsenic outgassin...

Forming epitaxial structures in fin field effect transistors

Method for producing pillar-shaped semiconductor device

Method for selective incorporation of dopant atoms in a semiconduct...

Semiconductor device, method of manufacturing the same and electron...

Semiconductor device including stressed source/drain, method of man...

VFET bottom epitaxy formed with anchors

Semiconductor device, method of manufacturing the same, and electro...

Vertically stacked transistors in a pin

Method and apparatus for depositing a monolayer on a three dimensio...

Capped ALD films for doping fin-shaped channel regions of 3-D IC tr...

Method of fabricating image sensor

Methods and systems for dopant activation using microwave radiation

Semiconductor device, method of manufacturing the same and electron...

Techniques for controlling transistor sub-fin leakage

Femtosecond laser-induced formation of submicrometer spikes on a se...

Semiconductor device, method of manufacturing the same and electron...

Semiconductor device with deep diffusion region

Method of preventing bulk silicon charge transfer for nanowire and...

IC unit and method of manufacturing the same, and electronic device...

Three-dimensional memory device having vertical semiconductor chann...

IC unit and methond of manufacturing the same, and electronic devic...

IC unit and method of manufacturing the same, and electronic device...

Capped ALD films for doping fin-shaped channel regions of 3-D IC tr...

Patents Applicationslast 30 patents

SELECTIVE LOW TEMPERATURE EPITAXIAL DEPOSITION PROCESS

ULTRAWIDE BANDGAP SEMICONDUCTOR DEVICES INCLUDING MAGNESIUM GERMAN...

FIELD EFFECT TRANSISTOR WITH ADJUSTABLE EFFECTIVE GATE LENGTH

ULTRAWIDE BANDGAP SEMICONDUCTOR DEVICES INCLUDING MAGNESIUM GERMAN...

TUNNEL FIELD EFFECT TRANSISTOR DEVICES

ULTRAWIDE BANDGAP SEMICONDUCTOR DEVICES INCLUDING MAGNESIUM GERMAN...

Forming Epitaxial Structures in Fin Field Effect Transistors

VERTICAL STORAGE DEVICE, METHOD OF MANUFACTURING THE SAME, AND ELEC...

SELECTIVE LOW TEMPERATURE EPITAXIAL DEPOSITION PROCESS

DETECTION METHOD OF METAL IMPURITY IN WAFER

VERTICALLY STACKED TRANSISTORS IN A FIN

METHOD FOR PRODUCING PILLAR-SHAPED SEMICONDUCTOR DEVICE

Methods and Systems for Dopant Activation Using Microwave Radiation

Forming Epitaxial Structures in Fin Field Effect Transistors

CAPPED ALD FILMS FOR DOPING FIN-SHAPED CHANNEL REGIONS OF 3-D IC TR...

VERTICALLY STACKED TRANSISTORS IN A PIN

VFET Bottom Epitaxy Formed with Anchors

IC UNIT AND METHOND OF MANUFACTURING THE SAME, AND ELECTRONIC DEVIC...

Forming Epitaxial Structures in Fin Field Effect Transistors

VFET Bottom Epitaxy Formed with Anchors

SEMICONDUCTOR DEVICE WITH DEEP DIFFUSION REGION

DEGASSING CHAMBER FOR ARSENIC RELATED PROCESSES

METHOD OF PREVENTING BULK SILICON CHARGE TRANSFER FOR NANOWIRE AND...

METHOD AND STRUCTURE TO FORM VERTICAL FIN BJT WITH GRADED SIGE BAS...

METHODS OF FORMING A VERTICAL TRANSISTOR DEVICE WITH A CHANNEL STRU...

CAPPED ALD FILMS FOR DOPING FIN-SHAPED CHANNEL REGIONS OF 3-D IC TR...

RESISTANCE REDUCTION UNDER TRANSISTOR SPACERS

Systems and Methods for Bidirectional Device Fabrication

Method of Manufacturing Semiconductor Devices by Using Epitaxy and...

VERTICAL TRANSISTORS WITH IMPROVED TOP SOURCE/DRAIN JUNCTIONS