using predeposition of impurities into the semiconductor surface

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

Current Industry

H01L21/2252using predeposition of impurities into the semiconductor surface

Industries

Patents Grantslast 30 patents

Information Patent Grant
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- SILANNA UV TECHNOLOGIES PTE LTD
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- C30 - CRYSTAL GROWTH
Information Patent Grant
Selective low temperature epitaxial deposition process
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- Issue date Dec 12, 2023
- Applied Materials, Inc.
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- H01 - BASIC ELECTRIC ELEMENTS
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- Institute of Microelectronics, Chinese Academy of Sciences
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- H01 - BASIC ELECTRIC ELEMENTS
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Method of utilizing a degassing chamber to reduce arsenic outgassin...
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- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for producing pillar-shaped semiconductor device
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- Unisantis Electronics Singapore Pte. Ltd.
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- H01 - BASIC ELECTRIC ELEMENTS
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Information Patent Grant
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- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
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- Institute of Microelectronics, Chinese Academy of Sciences
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- B82 - NANO-TECHNOLOGY
Information Patent Grant
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Method and apparatus for depositing a monolayer on a three dimensio...
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Capped ALD films for doping fin-shaped channel regions of 3-D IC tr...
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- Lam Research Corporation
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- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating image sensor
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- Issue date May 11, 2021
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- Sang-Su Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods and systems for dopant activation using microwave radiation
- Patent number 10,923,355
- Issue date Feb 16, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chun-Hsiung Tsai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device, method of manufacturing the same and electron...
- Patent number 10,910,278
- Issue date Feb 2, 2021
- Institute of Microelectronics, Chinese Academy of Sciences
- Huilong Zhu
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Techniques for controlling transistor sub-fin leakage
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- B82 - NANO-TECHNOLOGY
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Femtosecond laser-induced formation of submicrometer spikes on a se...
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- B82 - NANO-TECHNOLOGY
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Semiconductor device with deep diffusion region
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- Infineon Technologies AG
- Thomas Wuebben
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of preventing bulk silicon charge transfer for nanowire and...
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Information Patent Grant
IC unit and method of manufacturing the same, and electronic device...
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- B82 - NANO-TECHNOLOGY
Information Patent Grant
Three-dimensional memory device having vertical semiconductor chann...
- Patent number 10,629,613
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- SanDisk Technologies LLC
- Satoshi Shimizu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
IC unit and methond of manufacturing the same, and electronic devic...
- Patent number 10,629,498
- Issue date Apr 21, 2020
- Institute of Microelectronics, Chinese Academy of Sciences
- Huilong Zhu
- B82 - NANO-TECHNOLOGY
Information Patent Grant
IC unit and method of manufacturing the same, and electronic device...
- Patent number 10,600,696
- Issue date Mar 24, 2020
- Institute of Microelectronics, Chinese Academy of Sciences
- Huilong Zhu
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Capped ALD films for doping fin-shaped channel regions of 3-D IC tr...
- Patent number 10,559,468
- Issue date Feb 11, 2020
- Lam Research Corporation
- Reza Arghavani
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Forming epitaxial structures in fin field effect transistors
- Patent number 10,522,656
- Issue date Dec 31, 2019
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chia-Ling Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods and systems for dopant activation using microwave radiation
- Patent number 10,522,356
- Issue date Dec 31, 2019
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chun-Hsiung Tsai
- H05 - ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR

Patents Applicationslast 30 patents

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TUNNEL FIELD EFFECT TRANSISTOR DEVICES
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- Taiwan Semiconductor Manufacturing Co., LTD
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- H01 - BASIC ELECTRIC ELEMENTS
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SELECTIVE LOW TEMPERATURE EPITAXIAL DEPOSITION PROCESS
- Publication number 20220238650
- Publication date Jul 28, 2022
- Applied Materials, Inc.
- Chen-Ying WU
- H01 - BASIC ELECTRIC ELEMENTS
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DETECTION METHOD OF METAL IMPURITY IN WAFER
- Publication number 20220208617
- Publication date Jun 30, 2022
- ZING SEMICONDUCTOR CORPORATION
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- Publication number 20210351078
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- Intel Corporation
- Aaron D. Lilak
- H01 - BASIC ELECTRIC ELEMENTS
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METHOD FOR PRODUCING PILLAR-SHAPED SEMICONDUCTOR DEVICE
- Publication number 20200373415
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- Unisantis Electronics Singapore PTE Ltd.
- Fujio MASUOKA
- H01 - BASIC ELECTRIC ELEMENTS
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Methods and Systems for Dopant Activation Using Microwave Radiation
- Publication number 20200135468
- Publication date Apr 30, 2020
- Taiwan Semiconductor Manufacturing Company Limited
- CHUN-HSIUNG TSAI
- H05 - ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
Information Patent Application
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- Publication number 20200135894
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- Taiwan Semiconductor Manufacturing Co., LTD
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- H01 - BASIC ELECTRIC ELEMENTS
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CAPPED ALD FILMS FOR DOPING FIN-SHAPED CHANNEL REGIONS OF 3-D IC TR...
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- Publication date Oct 10, 2019
- International Business Machines Corporation
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IC UNIT AND METHOND OF MANUFACTURING THE SAME, AND ELECTRONIC DEVIC...
- Publication number 20190287865
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- Institute of Microelectronics, Chinese Academy of Sciences
- Huilong Zhu
- B82 - NANO-TECHNOLOGY
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- Taiwan Semiconductor Manufacturing Co., LTD
- Chia-Ling Chan
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- INFINEON TECHNOLOGIES AG
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- IDEAL POWER INC.
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- INFINEON TECHNOLOGIES AG
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- International Business Machines Corporation
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- H01 - BASIC ELECTRIC ELEMENTS
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- International Business Machines Corporation
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- H01 - BASIC ELECTRIC ELEMENTS

using predeposition of impurities into the semiconductor surface

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Ultrawide bandgap semiconductor devices including magnesium germani...

Selective low temperature epitaxial deposition process

Vertical storage device, method of manufacturing the same, and elec...

Vertically stacked transistors in a fin

Method of utilizing a degassing chamber to reduce arsenic outgassin...

Forming epitaxial structures in fin field effect transistors

Method for producing pillar-shaped semiconductor device

Method for selective incorporation of dopant atoms in a semiconduct...

Semiconductor device, method of manufacturing the same and electron...

Semiconductor device including stressed source/drain, method of man...

VFET bottom epitaxy formed with anchors

Semiconductor device, method of manufacturing the same, and electro...

Vertically stacked transistors in a pin

Method and apparatus for depositing a monolayer on a three dimensio...

Capped ALD films for doping fin-shaped channel regions of 3-D IC tr...

Method of fabricating image sensor

Methods and systems for dopant activation using microwave radiation

Semiconductor device, method of manufacturing the same and electron...

Techniques for controlling transistor sub-fin leakage

Femtosecond laser-induced formation of submicrometer spikes on a se...

Semiconductor device, method of manufacturing the same and electron...

Semiconductor device with deep diffusion region

Method of preventing bulk silicon charge transfer for nanowire and...

IC unit and method of manufacturing the same, and electronic device...

Three-dimensional memory device having vertical semiconductor chann...

IC unit and methond of manufacturing the same, and electronic devic...

IC unit and method of manufacturing the same, and electronic device...

Capped ALD films for doping fin-shaped channel regions of 3-D IC tr...

Forming epitaxial structures in fin field effect transistors

Methods and systems for dopant activation using microwave radiation

Patents Applicationslast 30 patents

ULTRAWIDE BANDGAP SEMICONDUCTOR DEVICES INCLUDING MAGNESIUM GERMAN...

FIELD EFFECT TRANSISTOR WITH ADJUSTABLE EFFECTIVE GATE LENGTH

ULTRAWIDE BANDGAP SEMICONDUCTOR DEVICES INCLUDING MAGNESIUM GERMAN...

TUNNEL FIELD EFFECT TRANSISTOR DEVICES

ULTRAWIDE BANDGAP SEMICONDUCTOR DEVICES INCLUDING MAGNESIUM GERMAN...

Forming Epitaxial Structures in Fin Field Effect Transistors

VERTICAL STORAGE DEVICE, METHOD OF MANUFACTURING THE SAME, AND ELEC...

SELECTIVE LOW TEMPERATURE EPITAXIAL DEPOSITION PROCESS

DETECTION METHOD OF METAL IMPURITY IN WAFER

VERTICALLY STACKED TRANSISTORS IN A FIN

METHOD FOR PRODUCING PILLAR-SHAPED SEMICONDUCTOR DEVICE

Methods and Systems for Dopant Activation Using Microwave Radiation

Forming Epitaxial Structures in Fin Field Effect Transistors

CAPPED ALD FILMS FOR DOPING FIN-SHAPED CHANNEL REGIONS OF 3-D IC TR...

VERTICALLY STACKED TRANSISTORS IN A PIN

VFET Bottom Epitaxy Formed with Anchors

IC UNIT AND METHOND OF MANUFACTURING THE SAME, AND ELECTRONIC DEVIC...

Forming Epitaxial Structures in Fin Field Effect Transistors

VFET Bottom Epitaxy Formed with Anchors

SEMICONDUCTOR DEVICE WITH DEEP DIFFUSION REGION

DEGASSING CHAMBER FOR ARSENIC RELATED PROCESSES

METHOD OF PREVENTING BULK SILICON CHARGE TRANSFER FOR NANOWIRE AND...

METHOD AND STRUCTURE TO FORM VERTICAL FIN BJT WITH GRADED SIGE BAS...

METHODS OF FORMING A VERTICAL TRANSISTOR DEVICE WITH A CHANNEL STRU...

CAPPED ALD FILMS FOR DOPING FIN-SHAPED CHANNEL REGIONS OF 3-D IC TR...

RESISTANCE REDUCTION UNDER TRANSISTOR SPACERS

Systems and Methods for Bidirectional Device Fabrication

Method of Manufacturing Semiconductor Devices by Using Epitaxy and...

VERTICAL TRANSISTORS WITH IMPROVED TOP SOURCE/DRAIN JUNCTIONS

VERTICAL TRANSISTORS WITH IMPROVED TOP SOURCE/DRAIN JUNCTIONS