using self aligned selective metal deposition simultaneously on the gate and on source or drain

Industry

CPC
H01L29/66515

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Parent Industries

HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

Current Industry

H01L29/66515using self aligned selective metal deposition simultaneously on the gate and on source or drain

Industries

Patents Grantslast 30 patents

Information Patent Grant
Source or drain structures for germanium N-channel devices
- Patent number 11,973,143
- Issue date Apr 30, 2024
- Intel Corporation
- Ryan Keech
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Localized heating in laser annealing process
- Patent number 11,967,647
- Issue date Apr 23, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Blandine Duriez
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming an integrated circuit device having a contact cap...
- Patent number 11,955,531
- Issue date Apr 9, 2024
- Samsung Electronics Co., Ltd.
- Dae-young Kwak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor having a source/drain contact with a single inner spacer
- Patent number 11,901,434
- Issue date Feb 13, 2024
- QUALCOMM Incorporated
- Junjing Bao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Secure chip identification using random threshold voltage variation...
- Patent number 11,894,444
- Issue date Feb 6, 2024
- International Business Machines Corporation
- Clint Jason Oteri
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-gate device and related methods
- Patent number 11,854,908
- Issue date Dec 26, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Kuan-Ting Pan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Localized protection layer for laser annealing process
- Patent number 11,848,385
- Issue date Dec 19, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Blandine Duriez
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FUSI gated device formation
- Patent number 11,823,959
- Issue date Nov 21, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yi-Huan Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Sacrificial fin for contact self-alignment
- Patent number 11,646,358
- Issue date May 9, 2023
- International Business Machines Corporation
- Yann Mignot
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit device having fin-type active
- Patent number 11,626,503
- Issue date Apr 11, 2023
- Samsung Electronics Co., Ltd.
- Dae-young Kwak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Secure chip identification using random threshold voltage variation...
- Patent number 11,575,023
- Issue date Feb 7, 2023
- International Business Machines Corporation
- Clint Jason Oteri
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical field-effect transistor late gate recess process with impr...
- Patent number 11,575,022
- Issue date Feb 7, 2023
- International Business Machines Corporation
- Wenyu Xu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing a semiconductor device
- Patent number 11,569,369
- Issue date Jan 31, 2023
- NANYA TECHNOLOGY CORPORATION
- Chun-Shun Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned contacts for walled nanosheet and forksheet field effe...
- Patent number 11,515,399
- Issue date Nov 29, 2022
- Imec VZW
- Eugenio Dentoni Litta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned contacts for nanosheet field effect transistor devices
- Patent number 11,462,443
- Issue date Oct 4, 2022
- Imec VZW
- Eugenio Dentoni Litta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for producing self-aligned gate and source/drain via connect...
- Patent number 11,430,876
- Issue date Aug 30, 2022
- Imec VZW
- Boon Teik Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Forming replacement low-k spacer in tight pitch fin field effect tr...
- Patent number 11,374,111
- Issue date Jun 28, 2022
- International Business Machines Corporation
- Xiuyu Cai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Replacement gate cross-couple for static random-access memory scaling
- Patent number 11,349,001
- Issue date May 31, 2022
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-gate device and related methods
- Patent number 11,328,963
- Issue date May 10, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd
- Kuan-Ting Pan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Sacrificial fin for contact self-alignment
- Patent number 11,316,029
- Issue date Apr 26, 2022
- International Business Machines Corporation
- Yann Mignot
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Localized protection layer for laser annealing process
- Patent number 11,302,820
- Issue date Apr 12, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd
- Blandine Duriez
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming self-aligned source/drain metal contacts
- Patent number 11,302,796
- Issue date Apr 12, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd
- Pei-Hsun Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Resistive random access memory devices and methods for forming the...
- Patent number 11,289,541
- Issue date Mar 29, 2022
- Winbond Electronics Corp.
- Frederick Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET fabrication methods
- Patent number 11,276,766
- Issue date Mar 15, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chun Hsiung Tsai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor with reduced gate resistance and improved process margin...
- Patent number 11,264,278
- Issue date Mar 1, 2022
- NANYA TECHNOLOGY CORPORATION
- Sheng-Hui Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned contact and method for forming the same
- Patent number 11,257,922
- Issue date Feb 22, 2022
- Winbond Electronics Corp.
- Sih-Han Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin field effect transistor device structure and method for forming...
- Patent number 11,251,305
- Issue date Feb 15, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd
- Lin-Yu Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device structures with composite spacers and fabricat...
- Patent number 11,222,960
- Issue date Jan 11, 2022
- CHANGXIN MEMORY TECHNOLOGIES, INC.
- Rongfu Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Using selectively formed cap layers to form self-aligned contacts t...
- Patent number 11,211,462
- Issue date Dec 28, 2021
- International Business Machines Corporation
- Chanro Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Third generation flash memory structure with self-aligned contact a...
- Patent number 11,211,469
- Issue date Dec 28, 2021
- Taiwan Semiconductor Manufacturing Company Limited
- Jhih-Bin Chen
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Multi-Gate Device And Related Methods
- Publication number 20240112959
- Publication date Apr 4, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Kuan-Ting PAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES AND METHODS OF FABRICATION THEREOF
- Publication number 20240105787
- Publication date Mar 28, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Cheng-Wei CHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL TRANSISTOR WITH SELF- ALIGN BACKSIDE CONTACT
- Publication number 20240079461
- Publication date Mar 7, 2024
- International Business Machines Corporation
- Brent A. Anderson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE-TOP DIELECTRIC STRUCTURE FOR SELF-ALIGNED CONTACT
- Publication number 20240014292
- Publication date Jan 11, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ta-Chun Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FUSI GATED DEVICE FORMATION
- Publication number 20230377992
- Publication date Nov 23, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yi-Huan Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BIRD'S BEAK PROFILE OF FIELD OXIDE REGION
- Publication number 20230253495
- Publication date Aug 10, 2023
- TEXAS INSTRUMENTS INCORPORATED
- Jingjing Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT DEVICE
- Publication number 20230207662
- Publication date Jun 29, 2023
- Samsung Electronics Co., Ltd.
- Dae-young KWAK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Dummy Hybrid Film for Self-Alignment Contact Formation
- Publication number 20230163194
- Publication date May 25, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Bor Chiuan Hsieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SECURE CHIP IDENTIFICATION USING RANDOM THRESHOLD VOLTAGE VARIATION...
- Publication number 20230109345
- Publication date Apr 6, 2023
- International Business Machines Corporation
- Clint Jason Oteri
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR STRUCTURE WITH METAL INTERCONNECTION DIRECTLY CONNECTING...
- Publication number 20230052056
- Publication date Feb 16, 2023
- ETRON TECHNOLOGY, INC.
- Chao-Chun Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIN TO FIN TRENCH CONTACT THROUGH A METAL GATE CUT
- Publication number 20220416057
- Publication date Dec 29, 2022
- Intel Corporation
- Guillaume BOUCHE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR HAVING A SOURCE/DRAIN CONTACT WITH A SINGLE INNER SPACER
- Publication number 20220352347
- Publication date Nov 3, 2022
- QUALCOMM Incorporated
- Junjing BAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR ARRANGEMENTS WITH STACKED TRENCH CONTACTS AND GATE CONT...
- Publication number 20220285527
- Publication date Sep 8, 2022
- Intel Corporation
- Andy Chih-Hung Wei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTI-GATE DEVICE AND RELATED METHODS
- Publication number 20220270934
- Publication date Aug 25, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Kuan-Ting PAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SACRIFICIAL FIN FOR CONTACT SELF-ALIGNMENT
- Publication number 20220262923
- Publication date Aug 18, 2022
- International Business Machines Corporation
- Yann Mignot
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
REPLACEMENT GATE CROSS-COUPLE FOR STATIC RANDOM-ACCESS MEMORY SCALING
- Publication number 20220246739
- Publication date Aug 4, 2022
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Self-Aligned Source/Drain Metal Contacts and Formation Thereof
- Publication number 20220238695
- Publication date Jul 28, 2022
- Taiwan Semiconductor Manufacturing Co., LTD
- Pei-Hsun Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOCALIZED PROTECTION LAYER FOR LASER ANNEALING PROCESS
- Publication number 20220223744
- Publication date Jul 14, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Blandine Duriez
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FINFET FABRICATION METHODS
- Publication number 20220208986
- Publication date Jun 30, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chun Hsiung TSAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SECURE CHIP IDENTIFICATION USING RANDOM THRESHOLD VOLTAGE VARIATION...
- Publication number 20220149183
- Publication date May 12, 2022
- International Business Machines Corporation
- Clint Jason Oteri
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR WITH REDUCED GATE RESISTANCE AND IMPROVED PROCESS MARGIN...
- Publication number 20220051939
- Publication date Feb 17, 2022
- NANYA TECHNOLOGY CORPORATION
- SHENG-HUI YANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND FORMING METHOD THEREOF
- Publication number 20220005940
- Publication date Jan 6, 2022
- Semiconductor Manufacturing International (Shanghai) Corporation
- Yang LIU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CAPPING LAYER FOR GATE ELECTRODES
- Publication number 20210384322
- Publication date Dec 9, 2021
- TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Chin-Hsiang LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FUSI GATED DEVICE FORMATION
- Publication number 20210384082
- Publication date Dec 9, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yi-Huan Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT DEVICE
- Publication number 20210384321
- Publication date Dec 9, 2021
- Samsung Electronics Co., Ltd.
- Dae-young KWAK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THIRD GENERATION FLASH MEMORY STRUCTURE WITH SELF-ALIGNED CONTACT A...
- Publication number 20210376120
- Publication date Dec 2, 2021
- Taiwan Semiconductor Manufacturing Company Limited
- Jhih-Bin CHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SACRIFICIAL FIN FOR CONTACT SELF-ALIGNMENT
- Publication number 20210328041
- Publication date Oct 21, 2021
- International Business Machines Corporation
- Yann Mignot
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE
- Publication number 20210328042
- Publication date Oct 21, 2021
- NANYA TECHNOLOGY CORPORATION
- CHUN-SHUN HUANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOCALIZED HEATING IN LASER ANNEALING PROCESS
- Publication number 20210328068
- Publication date Oct 21, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Blandine Duriez
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Self-Aligned Source/Drain Metal Contacts And Formation Thereof
- Publication number 20210313448
- Publication date Oct 7, 2021
- Taiwan Semiconductor Manufacturing Co., LTD
- Pei-Hsun Wang
- H01 - BASIC ELECTRIC ELEMENTS

using self aligned selective metal deposition simultaneously on the gate and on source or drain

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Source or drain structures for germanium N-channel devices

Localized heating in laser annealing process

Method of forming an integrated circuit device having a contact cap...

Semiconductor having a source/drain contact with a single inner spacer

Secure chip identification using random threshold voltage variation...

Multi-gate device and related methods

Localized protection layer for laser annealing process

FUSI gated device formation

Sacrificial fin for contact self-alignment

Integrated circuit device having fin-type active

Secure chip identification using random threshold voltage variation...

Vertical field-effect transistor late gate recess process with impr...

Method for manufacturing a semiconductor device

Self-aligned contacts for walled nanosheet and forksheet field effe...

Self-aligned contacts for nanosheet field effect transistor devices

Method for producing self-aligned gate and source/drain via connect...

Forming replacement low-k spacer in tight pitch fin field effect tr...

Replacement gate cross-couple for static random-access memory scaling

Multi-gate device and related methods

Sacrificial fin for contact self-alignment

Localized protection layer for laser annealing process

Method of forming self-aligned source/drain metal contacts

Resistive random access memory devices and methods for forming the...

FinFET fabrication methods

Transistor with reduced gate resistance and improved process margin...

Self-aligned contact and method for forming the same

Fin field effect transistor device structure and method for forming...

Semiconductor device structures with composite spacers and fabricat...

Using selectively formed cap layers to form self-aligned contacts t...

Third generation flash memory structure with self-aligned contact a...

Patents Applicationslast 30 patents

Multi-Gate Device And Related Methods

SEMICONDUCTOR DEVICES AND METHODS OF FABRICATION THEREOF

VERTICAL TRANSISTOR WITH SELF- ALIGN BACKSIDE CONTACT

GATE-TOP DIELECTRIC STRUCTURE FOR SELF-ALIGNED CONTACT

FUSI GATED DEVICE FORMATION

BIRD'S BEAK PROFILE OF FIELD OXIDE REGION

INTEGRATED CIRCUIT DEVICE

Dummy Hybrid Film for Self-Alignment Contact Formation

SECURE CHIP IDENTIFICATION USING RANDOM THRESHOLD VOLTAGE VARIATION...

TRANSISTOR STRUCTURE WITH METAL INTERCONNECTION DIRECTLY CONNECTING...

FIN TO FIN TRENCH CONTACT THROUGH A METAL GATE CUT

SEMICONDUCTOR HAVING A SOURCE/DRAIN CONTACT WITH A SINGLE INNER SPACER

TRANSISTOR ARRANGEMENTS WITH STACKED TRENCH CONTACTS AND GATE CONT...

MULTI-GATE DEVICE AND RELATED METHODS

SACRIFICIAL FIN FOR CONTACT SELF-ALIGNMENT

REPLACEMENT GATE CROSS-COUPLE FOR STATIC RANDOM-ACCESS MEMORY SCALING

Self-Aligned Source/Drain Metal Contacts and Formation Thereof

LOCALIZED PROTECTION LAYER FOR LASER ANNEALING PROCESS

FINFET FABRICATION METHODS

SECURE CHIP IDENTIFICATION USING RANDOM THRESHOLD VOLTAGE VARIATION...

TRANSISTOR WITH REDUCED GATE RESISTANCE AND IMPROVED PROCESS MARGIN...

SEMICONDUCTOR DEVICE AND FORMING METHOD THEREOF

CAPPING LAYER FOR GATE ELECTRODES

FUSI GATED DEVICE FORMATION

INTEGRATED CIRCUIT DEVICE

THIRD GENERATION FLASH MEMORY STRUCTURE WITH SELF-ALIGNED CONTACT A...

SACRIFICIAL FIN FOR CONTACT SELF-ALIGNMENT

METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE

LOCALIZED HEATING IN LASER ANNEALING PROCESS

Self-Aligned Source/Drain Metal Contacts And Formation Thereof