using storage elements comprising metal oxide memory material

Industry

CPC
G11C11/5685

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Parent Industries

GPHYSICS G11Information storage G11CSTATIC STORES G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements Storage elements therefor

Current Industry

G11C11/5685using storage elements comprising metal oxide memory material

Industries

Patents Grantslast 30 patents

Information Patent Grant
Methods for accessing resistive change elements operable as antifuses
- Patent number 11,972,830
- Issue date Apr 30, 2024
- Nantero, Inc.
- Jia Luo
- G11 - INFORMATION STORAGE
Information Patent Grant
Controlling positive feedback in filamentary
- Patent number 11,849,653
- Issue date Dec 19, 2023
- Applied Materials, Inc.
- Milan Pesic
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Semiconductor device and method of operating the same
- Patent number 11,804,263
- Issue date Oct 31, 2023
- SK hynix Inc.
- Tae Jung Ha
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor memory having both volatile and non-volatile function...
- Patent number 11,727,987
- Issue date Aug 15, 2023
- Zeno Semiconductor, Inc.
- Yuniarto Widjaja
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Programmable resistive memory element and a method of making the same
- Patent number 11,705,198
- Issue date Jul 18, 2023
- CYBERSWARM, INC
- Viorel-Georgel Dumitru
- G11 - INFORMATION STORAGE
Information Patent Grant
Two-terminal reversibly switchable memory device
- Patent number 11,672,189
- Issue date Jun 6, 2023
- Hefei Reliance Memory Limited
- Darrell Rinerson
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Vertical nonvolatile memory device including memory cell string
- Patent number 11,631,718
- Issue date Apr 18, 2023
- Samsung Electronics Co., Ltd.
- Jinhong Kim
- G11 - INFORMATION STORAGE
Information Patent Grant
Memristor crossbar arrays to activate processors
- Patent number 11,579,677
- Issue date Feb 14, 2023
- Hewlett Packard Enterprise Development LP
- Miao Hu
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Three-dimensional confined memory cell with decoupled read-write
- Patent number 11,569,444
- Issue date Jan 31, 2023
- International Business Machines Corporation
- John Rozen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Storage device and storage unit with a chalcogen element
- Patent number 11,522,132
- Issue date Dec 6, 2022
- SONY SEMICONDUCTOR SOLUTIONS CORPORATION
- Kazuhiro Ohba
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory element with a reactive metal layer
- Patent number 11,502,249
- Issue date Nov 15, 2022
- Hefei Reliance Memory Limited
- Christophe J. Chevallier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and system for data validation using memristors
- Patent number 11,455,258
- Issue date Sep 27, 2022
- CYBERSWARM, INC.
- Octavian Narcis Ionescu
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Memory devices and methods of forming memory devices
- Patent number 11,444,125
- Issue date Sep 13, 2022
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Desmond Jia Jun Loy
- G11 - INFORMATION STORAGE
Information Patent Grant
Methods for accessing resistive change elements in resistive change...
- Patent number 11,393,508
- Issue date Jul 19, 2022
- Nantero, Inc.
- Jia Luo
- G11 - INFORMATION STORAGE
Information Patent Grant
Realization of binary neural networks in NAND memory arrays
- Patent number 11,328,204
- Issue date May 10, 2022
- SanDisk Technologies LLC
- Won Ho Choi
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Controlling positive feedback in filamentary RRAM structures
- Patent number 11,322,685
- Issue date May 3, 2022
- Applied Materials, Inc.
- Milan Pesić
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Semiconductor memory having both volatile and non-volatile function...
- Patent number 11,295,813
- Issue date Apr 5, 2022
- Zeno Semiconductor Inc.
- Yuniarto Widjaja
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Memory cell including multi-level sensing
- Patent number 11,264,094
- Issue date Mar 1, 2022
- Intel Corporation
- Bruce Querbach
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Memory device and a method for forming the memory device
- Patent number 11,205,478
- Issue date Dec 21, 2021
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Lanxiang Wang
- G11 - INFORMATION STORAGE
Information Patent Grant
Programmable resistive memory element and a method of making the same
- Patent number 11,183,240
- Issue date Nov 23, 2021
- CYBERSWARM, INC
- Viorel-Georgel Dumitru
- G11 - INFORMATION STORAGE
Information Patent Grant
Atomic layer deposition and physical vapor deposition bilayer for a...
- Patent number 11,158,788
- Issue date Oct 26, 2021
- International Business Machines Corporation
- Kevin W. Brew
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Materials and components in phase change memory devices
- Patent number 11,107,985
- Issue date Aug 31, 2021
- Intel Corporation
- Valter Soncini
- G11 - INFORMATION STORAGE
Information Patent Grant
Two-terminal reversibly switchable memory device
- Patent number 11,063,214
- Issue date Jul 13, 2021
- Hefei Reliance Memory Limited
- Darrell Rinerson
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Memory devices with volatile and non-volatile behavior
- Patent number 11,043,265
- Issue date Jun 22, 2021
- Hewlett Packard Enterprise Development LP
- Zhiyong Li
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Switching resistor and method of making such a device
- Patent number 11,004,506
- Issue date May 11, 2021
- UCL BUSINESS LTD
- Anthony Kenyon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and apparatus for vitamin D enhancement in mushrooms
- Patent number 10,930,342
- Issue date Feb 23, 2021
- Oakshire Holdings, Inc.
- William F. Chalupa
- A23 - FOODS OR FOODSTUFFS THEIR TREATMENT, NOT COVERED BY OTHER CLASSES
Information Patent Grant
Programmable resistive memory element and a method of making the same
- Patent number 10,902,914
- Issue date Jan 26, 2021
- CYBERSWARM, INC.
- Viorel-Georgel Dumitru
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor device structure with multiple resistance variable la...
- Patent number 10,868,247
- Issue date Dec 15, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd
- Hai-Dang Trinh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor memory having both volatile and non-volatile function...
- Patent number 10,867,676
- Issue date Dec 15, 2020
- Zeno Semiconductor, Inc.
- Yuniarto Widjaja
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Memory element with a reactive metal layer
- Patent number 10,833,125
- Issue date Nov 10, 2020
- Hefei Reliance Memory Limited
- Christophe J. Chevallier
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
BINARY NEURAL NETWORK HARDWARE APPARATUS
- Publication number 20240282368
- Publication date Aug 22, 2024
- ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE
- Sung Min HWANG
- G11 - INFORMATION STORAGE
Information Patent Application
ANALOG PROGRAMMABLE RESISTIVE MEMORY
- Publication number 20240237565
- Publication date Jul 11, 2024
- CYBERSWARM, INC.
- Viorel-Georgel Dumitru
- G11 - INFORMATION STORAGE
Information Patent Application
ANALOG PROGRAMMABLE RESISTIVE MEMORY
- Publication number 20240138275
- Publication date Apr 25, 2024
- CYBERSWARM, INC.
- Viorel-Georgel Dumitru
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY DEVICE AND PROGRAMMING METHOD THEREOF
- Publication number 20240062814
- Publication date Feb 22, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jeremy Guy
- G11 - INFORMATION STORAGE
Information Patent Application
PROGRAMMABLE RESISTIVE MEMORY ELEMENT AND A METHOD OF MAKING THE SAME
- Publication number 20230360701
- Publication date Nov 9, 2023
- Cyberswarm, Inc.
- Viorel-Georgel DUMITRU
- G11 - INFORMATION STORAGE
Information Patent Application
Semiconductor Memory Having Both Volatile and Non-Volatile Function...
- Publication number 20230343392
- Publication date Oct 26, 2023
- Zeno Semiconductor, Inc.
- Yuniarto Widjaja
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
Methods for Accessing Resistive Change Elements Operable as Antifuses
- Publication number 20220358970
- Publication date Nov 10, 2022
- Nantero, Inc.
- Jia Luo
- G11 - INFORMATION STORAGE
Information Patent Application
THREE-DIMENSIONAL CONFINED MEMORY CELL WITH DECOUPLED READ-WRITE
- Publication number 20220320426
- Publication date Oct 6, 2022
- International Business Machines Corporation
- John Rozen
- G11 - INFORMATION STORAGE
Information Patent Application
CONTROLLING POSITIVE FEEDBACK IN FILAMENTARY RRAM STRUCTURES
- Publication number 20220263022
- Publication date Aug 18, 2022
- Applied Materials, Inc.
- Milan Pesic
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF OPERATING THE SAME
- Publication number 20220215876
- Publication date Jul 7, 2022
- SK HYNIX INC.
- Tae Jung HA
- G11 - INFORMATION STORAGE
Information Patent Application
Semiconductor Memory Having Both Volatile and Non-Volatile Function...
- Publication number 20220199160
- Publication date Jun 23, 2022
- Zeno Semiconductor, Inc.
- Yuniarto Widjaja
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
PROGRAMMABLE RESISTIVE MEMORY ELEMENT AND A METHOD OF MAKING THE SAME
- Publication number 20220076747
- Publication date Mar 10, 2022
- CYBERSWARM, INC.
- Viorel-Georgel DUMITRU
- G11 - INFORMATION STORAGE
Information Patent Application
VERTICAL NONVOLATILE MEMORY DEVICE INCLUDING MEMORY CELL STRING
- Publication number 20220020818
- Publication date Jan 20, 2022
- Samsung Electronics Co., Ltd.
- Jinhong KIM
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY DEVICES AND METHODS OF FORMING MEMORY DEVICES
- Publication number 20210399055
- Publication date Dec 23, 2021
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- Desmond Jia Jun LOY
- G11 - INFORMATION STORAGE
Information Patent Application
TWO-TERMINAL REVERSIBLY SWITCHABLE MEMORY DEVICE
- Publication number 20210193917
- Publication date Jun 24, 2021
- Hefei Reliance Memory Limited
- Darrell RINERSON
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
PROGRAMMABLE RESISTIVE MEMORY ELEMENT AND A METHOD OF MAKING THE SAME
- Publication number 20210151108
- Publication date May 20, 2021
- CYBERSWARM, INC.
- Viorel-Georgel DUMITRU
- G11 - INFORMATION STORAGE
Information Patent Application
Method and Apparatus for Vitamin D Enhancement in Mushrooms
- Publication number 20210142851
- Publication date May 13, 2021
- Oakshire Holdings, Inc.
- William F. CHALUPA
- A23 - FOODS OR FOODSTUFFS THEIR TREATMENT, NOT COVERED BY OTHER CLASSES
Information Patent Application
Semiconductor Memory Having Both Volatile and Non-Volatile Function...
- Publication number 20210110872
- Publication date Apr 15, 2021
- Zeno Semiconductor, Inc.
- Yuniarto Widjaja
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
CONDUCTIVE METAL OXIDE STRUCTURES IN NON-VOLATILE RE-WRITABLE MEMOR...
- Publication number 20210098063
- Publication date Apr 1, 2021
- Unity Semiconductor Corporation
- Lawrence Schloss
- G11 - INFORMATION STORAGE
Information Patent Application
Method and System for Data Validation Using Memristors
- Publication number 20210042243
- Publication date Feb 11, 2021
- CYBERSWARM, INC.
- Octavian Narcis Ionescu
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
MEMORY ELEMENT WITH A REACTIVE METAL LAYER
- Publication number 20210013262
- Publication date Jan 14, 2021
- Hefei Reliance Memory Limited
- Christophe J. CHEVALLIER
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY DEVICE AND A METHOD FOR FORMING THE MEMORY DEVICE
- Publication number 20210005251
- Publication date Jan 7, 2021
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- Lanxiang Wang
- G11 - INFORMATION STORAGE
Information Patent Application
REALIZATION OF BINARY NEURAL NETWORKS IN NAND MEMORY ARRAYS
- Publication number 20200311512
- Publication date Oct 1, 2020
- SANDISK TECHNOLOGIES LLC
- Won Ho Choi
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
SEMICONDUCTOR DEVICE STRUCTURE WITH MULTIPLE RESISTANCE VARIABLE LA...
- Publication number 20200274058
- Publication date Aug 27, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Hai-Dang TRINH
- G11 - INFORMATION STORAGE
Information Patent Application
RESISTIVE RANDOM ACCESS MEMORY
- Publication number 20200266344
- Publication date Aug 20, 2020
- WINBOND ELECTRONICS CORP.
- Bo-Lun Wu
- G11 - INFORMATION STORAGE
Information Patent Application
TWO-TERMINAL REVERSIBLY SWITCHABLE MEMORY DEVICE
- Publication number 20200259079
- Publication date Aug 13, 2020
- Hefei Reliance Memory Limited
- Darrell RINERSON
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
MATERIALS AND COMPONENTS IN PHASE CHANGE MEMORY DEVICES
- Publication number 20200168794
- Publication date May 28, 2020
- Intel Corporation
- Valter Soncini
- G11 - INFORMATION STORAGE
Information Patent Application
METHODS AND SYSTEMS FOR COMPENSATING FOR DEGRADATION OF RESISTIVE M...
- Publication number 20200051629
- Publication date Feb 13, 2020
- Samsung Electronics Co., Ltd.
- Seung-you BAEK
- G11 - INFORMATION STORAGE
Information Patent Application
A Switching Resistor And Method Of Making Such A Device
- Publication number 20200043550
- Publication date Feb 6, 2020
- Anthony Kenyon
- G11 - INFORMATION STORAGE
Information Patent Application
DIFFERENTIAL NON-VOLATILE MEMORY CELL FOR ARTIFICIAL NEURAL NETWORK
- Publication number 20200034686
- Publication date Jan 30, 2020
- SANDISK TECHNOLOGIES LLC
- Pi-Feng Chiu
- G06 - COMPUTING CALCULATING COUNTING

using storage elements comprising metal oxide memory material

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Methods for accessing resistive change elements operable as antifuses

Controlling positive feedback in filamentary

Semiconductor device and method of operating the same

Semiconductor memory having both volatile and non-volatile function...

Programmable resistive memory element and a method of making the same

Two-terminal reversibly switchable memory device

Vertical nonvolatile memory device including memory cell string

Memristor crossbar arrays to activate processors

Three-dimensional confined memory cell with decoupled read-write

Storage device and storage unit with a chalcogen element

Memory element with a reactive metal layer

Method and system for data validation using memristors

Memory devices and methods of forming memory devices

Methods for accessing resistive change elements in resistive change...

Realization of binary neural networks in NAND memory arrays

Controlling positive feedback in filamentary RRAM structures

Semiconductor memory having both volatile and non-volatile function...

Memory cell including multi-level sensing

Memory device and a method for forming the memory device

Programmable resistive memory element and a method of making the same

Atomic layer deposition and physical vapor deposition bilayer for a...

Materials and components in phase change memory devices

Two-terminal reversibly switchable memory device

Memory devices with volatile and non-volatile behavior

Switching resistor and method of making such a device

Method and apparatus for vitamin D enhancement in mushrooms

Programmable resistive memory element and a method of making the same

Semiconductor device structure with multiple resistance variable la...

Semiconductor memory having both volatile and non-volatile function...

Memory element with a reactive metal layer

Patents Applicationslast 30 patents

BINARY NEURAL NETWORK HARDWARE APPARATUS

ANALOG PROGRAMMABLE RESISTIVE MEMORY

ANALOG PROGRAMMABLE RESISTIVE MEMORY

MEMORY DEVICE AND PROGRAMMING METHOD THEREOF

PROGRAMMABLE RESISTIVE MEMORY ELEMENT AND A METHOD OF MAKING THE SAME

Semiconductor Memory Having Both Volatile and Non-Volatile Function...

Methods for Accessing Resistive Change Elements Operable as Antifuses

THREE-DIMENSIONAL CONFINED MEMORY CELL WITH DECOUPLED READ-WRITE

CONTROLLING POSITIVE FEEDBACK IN FILAMENTARY RRAM STRUCTURES

SEMICONDUCTOR DEVICE AND METHOD OF OPERATING THE SAME

Semiconductor Memory Having Both Volatile and Non-Volatile Function...

PROGRAMMABLE RESISTIVE MEMORY ELEMENT AND A METHOD OF MAKING THE SAME

VERTICAL NONVOLATILE MEMORY DEVICE INCLUDING MEMORY CELL STRING

MEMORY DEVICES AND METHODS OF FORMING MEMORY DEVICES

TWO-TERMINAL REVERSIBLY SWITCHABLE MEMORY DEVICE

PROGRAMMABLE RESISTIVE MEMORY ELEMENT AND A METHOD OF MAKING THE SAME

Method and Apparatus for Vitamin D Enhancement in Mushrooms

Semiconductor Memory Having Both Volatile and Non-Volatile Function...

CONDUCTIVE METAL OXIDE STRUCTURES IN NON-VOLATILE RE-WRITABLE MEMOR...

Method and System for Data Validation Using Memristors

MEMORY ELEMENT WITH A REACTIVE METAL LAYER

MEMORY DEVICE AND A METHOD FOR FORMING THE MEMORY DEVICE

REALIZATION OF BINARY NEURAL NETWORKS IN NAND MEMORY ARRAYS

SEMICONDUCTOR DEVICE STRUCTURE WITH MULTIPLE RESISTANCE VARIABLE LA...

RESISTIVE RANDOM ACCESS MEMORY

TWO-TERMINAL REVERSIBLY SWITCHABLE MEMORY DEVICE

MATERIALS AND COMPONENTS IN PHASE CHANGE MEMORY DEVICES

METHODS AND SYSTEMS FOR COMPENSATING FOR DEGRADATION OF RESISTIVE M...

A Switching Resistor And Method Of Making Such A Device

DIFFERENTIAL NON-VOLATILE MEMORY CELL FOR ARTIFICIAL NEURAL NETWORK