Vacuum deposition

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CPC
Y10S148/169

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YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS Y10USPC classification Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS Y10S148/00Metal treatment

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Y10S148/169Vacuum deposition

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Patents Grantslast 30 patents

Information Patent Grant
SixSnyGe1-x-y and related alloy heterostructures based on Si, Ge an...
- Patent number 7,598,513
- Issue date Oct 6, 2009
- Arizona Board of Regents, Acting for and on Behalf of Arizona State Universit...
- John Kouvetakis
- Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMA...
Information Patent Grant
Method of forming a silicon nitride layer
- Patent number 5,907,792
- Issue date May 25, 1999
- Motorola,Inc.
- Ravi Droopad
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Semiconductor integrated circuit using monolayer epitaxial growth
- Patent number 5,905,297
- Issue date May 18, 1999
- Fujitsu Limited
- Toshihiko Mori
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Multi-layer structure for II-VI group compound semiconductor and me...
- Patent number 5,874,349
- Issue date Feb 23, 1999
- NEC Corporation
- Kouichi Naniwae
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-layer structure for II-VI group compound semiconductor on an...
- Patent number 5,834,361
- Issue date Nov 10, 1998
- NEC Corporation
- Kouichi Naniwae
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming semiconductor integrated circuit using monolayer...
- Patent number 5,705,408
- Issue date Jan 6, 1998
- Fujitsu Limited
- Toshihiko Mori
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Method for forming a film and method for manufacturing a thin film...
- Patent number 5,480,818
- Issue date Jan 2, 1996
- Fujitsu Limited
- Tomotaka Matsumoto
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method of fabricating Shannon Cell circuits
- Patent number 5,346,851
- Issue date Sep 13, 1994
- Texas Instruments Incorporated
- John N. Randall
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Method of making semiconductor heterostructures of gallium arsenide...
- Patent number 5,308,444
- Issue date May 3, 1994
- AT&T Bell Laboratories
- Eugene A. Fitzgerald
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Staged-vacuum wafer processing system and method
- Patent number 5,186,718
- Issue date Feb 16, 1993
- Applied Materials, Inc.
- Avi Tepman
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of filling a recess flat with a material by a bias ECR-CVD p...
- Patent number 5,182,221
- Issue date Jan 26, 1993
- Sony Corporation
- Junichi Sato
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for molecular-beam epitaxial growth
- Patent number 5,120,393
- Issue date Jun 9, 1992
- Matsushita Electric Industrial Co., Ltd.
- Minoru Kubo
- C30 - CRYSTAL GROWTH
Information Patent Grant
Growth of III-V films by control of MBE growth front stoichiometry
- Patent number 5,094,974
- Issue date Mar 10, 1992
- The United States of America as represented by the administrator of the Natio...
- Frank J. Grunthaner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a semiconductor laser
- Patent number 5,093,278
- Issue date Mar 3, 1992
- Sumitomo Electric Industries, Ltd.
- Hidenori Kamei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Sublimating and cracking apparatus
- Patent number 5,080,870
- Issue date Jan 14, 1992
- Board of Regents, The University of Texas System
- Ben G. Streetman
- C30 - CRYSTAL GROWTH
Information Patent Grant
Vacuum system with a secondary gas also connected to the roughing p...
- Patent number 5,062,771
- Issue date Nov 5, 1991
- Hitachi, Ltd.
- Akihiko Satou
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method of growing p-type group II-VI material
- Patent number 5,028,561
- Issue date Jul 2, 1991
- Hughes Aircraft Company
- G. Sanjiv Kamath
- C30 - CRYSTAL GROWTH
Information Patent Grant
Solid film growth apparatus
- Patent number 5,025,751
- Issue date Jun 25, 1991
- Hitachi, Ltd.
- Shinichiro Takatani
- C30 - CRYSTAL GROWTH
Information Patent Grant
Process of fabricating a heterojunction field effect transistor
- Patent number 5,026,655
- Issue date Jun 25, 1991
- NEC Corporation
- Keiichi Ohata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for growing tilted superlattices
- Patent number 5,013,683
- Issue date May 7, 1991
- The Regents of the University of California
- Pierre M. Petroff
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Method of making an article comprising a III/V semiconductor device
- Patent number 4,977,103
- Issue date Dec 11, 1990
- AT&T Bell Laboratories
- Naresh Chand
- C30 - CRYSTAL GROWTH
Information Patent Grant
Selective deposition of amorphous and polycrystalline silicon
- Patent number 4,963,506
- Issue date Oct 16, 1990
- Motorola Inc.
- Hang M. Liaw
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of growing compound semiconductor thin film using multichamb...
- Patent number 4,960,720
- Issue date Oct 2, 1990
- Masafumi Shimbo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Moelcular beam epitaxy for selective epitaxial growth of III - V co...
- Patent number 4,948,751
- Issue date Aug 14, 1990
- NEC Corporation
- Akihiko Okamoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of growing III-V semiconductor layers with high effective ho...
- Patent number 4,939,102
- Issue date Jul 3, 1990
- American Telephone and Telegraph Company
- Robert A. Hamm
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Compound semiconductor device and a method of manufacturing the same
- Patent number 4,925,810
- Issue date May 15, 1990
- Kabushiki Kaisha Toyota Chuo Kenkyusho
- Hiroyuki Kano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Submicron dimension compound semiconductor fabrication using therma...
- Patent number 4,920,069
- Issue date Apr 24, 1990
- International Business Machines Corporation
- Eric R. Fossum
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for the epitaxial production of semiconductor stock material
- Patent number 4,916,089
- Issue date Apr 10, 1990
- Stichting Katholieke Universiteit
- Jaap Van Suchtelen
- C30 - CRYSTAL GROWTH
Information Patent Grant
III-V Semiconductor growth initiation on silicon using TMG and TEG
- Patent number 4,910,167
- Issue date Mar 20, 1990
- Kopin Corporation
- Jhang W. Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Two step vapor-phase epitaxial growth process for control of autodo...
- Patent number 4,894,349
- Issue date Jan 16, 1990
- Kabushiki Kaisha Toshiba
- Yoshihiko Saito
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Sixsnyge1-x-y and related alloy heterostructures based on si, ge an...
- Publication number 20060163612
- Publication date Jul 27, 2006
- ARIZONA BOARD OF REGENTS
- John Kouvetakis
- Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMA...

Vacuum deposition

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

SixSnyGe1-x-y and related alloy heterostructures based on Si, Ge an...

Method of forming a silicon nitride layer

Semiconductor integrated circuit using monolayer epitaxial growth

Multi-layer structure for II-VI group compound semiconductor and me...

Multi-layer structure for II-VI group compound semiconductor on an...

Method for forming semiconductor integrated circuit using monolayer...

Method for forming a film and method for manufacturing a thin film...

Method of fabricating Shannon Cell circuits

Method of making semiconductor heterostructures of gallium arsenide...

Staged-vacuum wafer processing system and method

Method of filling a recess flat with a material by a bias ECR-CVD p...

Method for molecular-beam epitaxial growth

Growth of III-V films by control of MBE growth front stoichiometry

Method of manufacturing a semiconductor laser

Sublimating and cracking apparatus

Vacuum system with a secondary gas also connected to the roughing p...

Method of growing p-type group II-VI material

Solid film growth apparatus

Process of fabricating a heterojunction field effect transistor

Method for growing tilted superlattices

Method of making an article comprising a III/V semiconductor device

Selective deposition of amorphous and polycrystalline silicon

Method of growing compound semiconductor thin film using multichamb...

Moelcular beam epitaxy for selective epitaxial growth of III - V co...

Method of growing III-V semiconductor layers with high effective ho...

Compound semiconductor device and a method of manufacturing the same

Submicron dimension compound semiconductor fabrication using therma...

Process for the epitaxial production of semiconductor stock material

III-V Semiconductor growth initiation on silicon using TMG and TEG

Two step vapor-phase epitaxial growth process for control of autodo...

Patents Applicationslast 30 patents

Sixsnyge1-x-y and related alloy heterostructures based on si, ge an...