Vertical dipping system

Industry

CPC
C30B19/062

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Parent Industries

CCHEMISTRY METALLURGY C30Crystal growth C30BSINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL REFINING BY ZONE-MELTING OF MATERIAL PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH D... C30B19/00Liquid-phase epitaxial-layer growth

Current Industry

C30B19/062Vertical dipping system

Industries

Patents Grantslast 30 patents

Information Patent Grant
SiC single crystal and method for producing same
- Patent number 10,519,565
- Issue date Dec 31, 2019
- Toyota Jidosha Kabushiki Kaisha
- Takayuki Shirai
- C30 - CRYSTAL GROWTH
Information Patent Grant
Preparation method and application of sodium barium fluoroborate bi...
- Patent number 10,487,419
- Issue date Nov 26, 2019
- XINJIANG TECHNICAL INSTITUTE OF PHYSICS AND CHEMISTRY, CHINESE ACADEMY OF SCI...
- Shilie Pan
- C01 - INORGANIC CHEMISTRY
Information Patent Grant
SiC single crystal and method for producing same
- Patent number 10,450,671
- Issue date Oct 22, 2019
- Toyota Jidosha Kabushiki Kaisha
- Hironori Daikoku
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of producing crystal
- Patent number 10,443,149
- Issue date Oct 15, 2019
- Kyocera Corporation
- Chiaki Domoto
- C30 - CRYSTAL GROWTH
Information Patent Grant
SiC single crystal and method for producing same
- Patent number 10,415,152
- Issue date Sep 17, 2019
- Toyota Jidosha Kabushiki Kaisha
- Takayuki Shirai
- C30 - CRYSTAL GROWTH
Information Patent Grant
N-type SiC single crystal and method for its production
- Patent number 10,167,570
- Issue date Jan 1, 2019
- Toyota Jidosha Kabushiki Kaisha
- Takayuki Shirai
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for producing crystal of silicon carbide, and crystal produc...
- Patent number 10,151,046
- Issue date Dec 11, 2018
- National University Corporation Nagoya University
- Toru Ujihara
- C30 - CRYSTAL GROWTH
Information Patent Grant
SiC single crystal and method for producing same
- Patent number 10,094,044
- Issue date Oct 9, 2018
- Toyota Jidosha Kabushiki Kaisha
- Katsunori Danno
- C30 - CRYSTAL GROWTH
Information Patent Grant
SiC single crystal production method and production apparatus
- Patent number 10,081,883
- Issue date Sep 25, 2018
- Toyota Jidosha Kabushiki Kaisha
- Motohisa Kado
- C30 - CRYSTAL GROWTH
Information Patent Grant
Li4Sr(BO3)2 compound, Li4Sr(BO3)2 nonlinear optical crystal, prepar...
- Patent number 10,005,675
- Issue date Jun 26, 2018
- ECHNICAL INSTITUTE OF PHYSICS AND CHEMISTRY, CHINESE ACADEMY OF SCIENCES
- Guochun Zhang
- C01 - INORGANIC CHEMISTRY
Information Patent Grant
Method for preparing single-crystal cubic sesquioxides and uses
- Patent number 9,945,049
- Issue date Apr 17, 2018
- CENTRE NATIONAL DE LA RECHERCHE SCINTIFIQI
- Philippe Veber
- C30 - CRYSTAL GROWTH
Information Patent Grant
Production method of SiC single crystal
- Patent number 9,920,449
- Issue date Mar 20, 2018
- Toyota Jidosha Kabushiki Kaisha
- Kazuhiko Kusunoki
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for single crystal growth of photovoltaic perovskite materia...
- Patent number 9,812,660
- Issue date Nov 7, 2017
- Nutech Ventures
- Jinsong Huang
- C30 - CRYSTAL GROWTH
Information Patent Grant
SiC single crystal and method for producing same
- Patent number 9,732,437
- Issue date Aug 15, 2017
- Toyota Jidosha Kabushiki Kaisha
- Takayuki Shirai
- C30 - CRYSTAL GROWTH
Information Patent Grant
SiC single-crystal ingot, SiC single crystal, and production method...
- Patent number 9,732,436
- Issue date Aug 15, 2017
- Toyota Jidosha Kabushiki Kaisha
- Takayuki Shirai
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for producing a SiC single crystal in the presence of a magn...
- Patent number 9,708,734
- Issue date Jul 18, 2017
- Toyota Jidosha Kabushiki Kaisha
- Hironori Daikoku
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for producing an n-type SiC single crystal from a Si—C solut...
- Patent number 9,702,057
- Issue date Jul 11, 2017
- Toyota Jidosha Kabushiki Kaisha
- Takayuki Shirai
- C30 - CRYSTAL GROWTH
Information Patent Grant
Ferroelectric thin film having superlattice structure, manufacturin...
- Patent number 9,543,500
- Issue date Jan 10, 2017
- National Institute for Materials Science
- Minoru Osada
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method and device for fabricating a layer in semiconductor material
- Patent number 9,528,196
- Issue date Dec 27, 2016
- Soitec
- Michel Bruel
- C30 - CRYSTAL GROWTH
Information Patent Grant
SiC single crystal ingot and production method therefor
- Patent number 9,523,156
- Issue date Dec 20, 2016
- Toyota Jidosha Kabushiki Kaisha
- Motohisa Kado
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for synthesising diamond
- Patent number 9,346,681
- Issue date May 24, 2016
- DESIGNED MATERIALS LIMITED
- A. Marshall Stoneham
- C01 - INORGANIC CHEMISTRY
Information Patent Grant
SiC single crystal wafer and process for production thereof
- Patent number 9,222,198
- Issue date Dec 29, 2015
- Nippon Steel & Sumitomo Metal Corporation
- Kazuhiko Kusunoki
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Method for preparing single-crystal cubic sesquioxides and uses the...
- Patent number 9,187,845
- Issue date Nov 17, 2015
- Centre National de la Recherche Scientifique
- Philippe Veber
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of exocasting an article of semiconducting material
- Patent number 8,591,795
- Issue date Nov 26, 2013
- Corning Incorporated
- Prantik Mazumder
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for manufacturing nitride single crystal
- Patent number 8,506,705
- Issue date Aug 13, 2013
- NGK Insulators, Ltd.
- Mikiya Ichimura
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of making an article of semiconducting material
- Patent number 8,480,803
- Issue date Jul 9, 2013
- Corning Incorporated
- Glen Bennett Cook
- C30 - CRYSTAL GROWTH
Information Patent Grant
Methods of making an article of semiconducting material on a mold c...
- Patent number 8,398,768
- Issue date Mar 19, 2013
- Corning Incorporated
- Glen Bennett Cook
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Liquid phase growth process, liquid phase growth system and substra...
- Patent number 7,022,181
- Issue date Apr 4, 2006
- Canon Kabushiki Kaisha
- Katsumi Nakagawa
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Apparatus for producing semiconductor thin films on moving substrates
- Patent number 6,951,584
- Issue date Oct 4, 2005
- Canon Kabushiki Kaisha
- Noritaka Ukiyo
- C30 - CRYSTAL GROWTH
Information Patent Grant
Liquid-phase growth process and liquid-phase growth apparatus
- Patent number 6,872,248
- Issue date Mar 29, 2005
- Canon Kabushiki Kaisha
- Masaki Mizutani
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC

Patents Applicationslast 30 patents

Information Patent Application
SiC SINGLE CRYSTAL AND METHOD FOR PRODUCING SAME
- Publication number 20170327967
- Publication date Nov 16, 2017
- Toyota Jidosha Kabushiki Kaisha
- Takayuki SHIRAI
- C30 - CRYSTAL GROWTH
Information Patent Application
SiC SINGLE CRYSTAL AND METHOD FOR PRODUCING SAME
- Publication number 20170327968
- Publication date Nov 16, 2017
- Toyota Jidosha Kabushiki Kaisha
- Hironori DAIKOKU
- C30 - CRYSTAL GROWTH
Information Patent Application
APPARATUS FOR PRODUCING SiC SINGLE CRYSTAL BY SOLUTION GROWTH PROCE...
- Publication number 20170306522
- Publication date Oct 26, 2017
- NIPPON STEEL & SUMITOMO METAL CORPORATION
- Kazuhito KAMEI
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR PRODUCING SiC SINGLE CRYSTAL AND APPARATUS FOR PRODUCING...
- Publication number 20170298533
- Publication date Oct 19, 2017
- NIPPON STEEL & SUMITOMO METAL CORPORATION
- Kazuhiko KUSUNOKI
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR PRODUCING GROUP III NITRIDE CRYSTAL, AND RAMO4-CONTAININ...
- Publication number 20170260648
- Publication date Sep 14, 2017
- Panasonic Intellectual Property Management Co., Ltd.
- YOSHIO OKAYAMA
- C30 - CRYSTAL GROWTH
Information Patent Application
Method for Producing Crystal of Silicon Carbide, and Crystal Produc...
- Publication number 20170260647
- Publication date Sep 14, 2017
- NATIONAL UNIVERSITY CORPORATION NAGOYA UNIVERSITY
- Toru UJIHARA
- C30 - CRYSTAL GROWTH
Information Patent Application
SIC SINGLE CRYSTAL PRODUCTION METHOD AND PRODUCTION APPARATUS
- Publication number 20170198408
- Publication date Jul 13, 2017
- Toyota Jidosha Kabushiki Kaisha
- Motohisa KADO
- C30 - CRYSTAL GROWTH
Information Patent Application
SIC SINGLE CRYSTAL AND METHOD FOR PRODUCING SAME
- Publication number 20170167049
- Publication date Jun 15, 2017
- Toyota Jidosha Kabushiki Kaisha
- Katsunori DANNO
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD OF MANUFACTURING SiC SINGLE CRYSTAL
- Publication number 20170067183
- Publication date Mar 9, 2017
- NIPPON STEEL & SUMITOMO METAL CORPORATION
- Kazuaki SEKI
- C30 - CRYSTAL GROWTH
Information Patent Application
PRODUCTION METHOD OF SiC SINGLE CRYSTAL
- Publication number 20170009373
- Publication date Jan 12, 2017
- NIPPON STEEL & SUMITOMO METAL CORPORATION
- Kazuhiko KUSUNOKI
- C30 - CRYSTAL GROWTH
Information Patent Application
SIC SINGLE CRYSTAL AND METHOD FOR PRODUCING SAME
- Publication number 20170009374
- Publication date Jan 12, 2017
- Toyota Jidosha Kabushiki Kaisha
- Takayuki SHIRAI
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR PRODUCING SIC SINGLE CRYSTAL
- Publication number 20160340794
- Publication date Nov 24, 2016
- Toyota Jidosha Kabushiki Kaisha
- Hironori DAIKOKU
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD OF PRODUCING CRYSTAL
- Publication number 20160340795
- Publication date Nov 24, 2016
- KYOCERA CORPORATION
- Chiaki DOMOTO
- C30 - CRYSTAL GROWTH
Information Patent Application
PREPARATION METHOD AND APPLICATION OF SODIUM BARIUM FLUOROBORATE BI...
- Publication number 20160305041
- Publication date Oct 20, 2016
- Xinjiang Technical Institute of Physics and Chemistry, Chinese Academy of Sci...
- Shilie PAN
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR PRODUCING SiC SINGLE CRYSTAL
- Publication number 20160273126
- Publication date Sep 22, 2016
- NIPPON STEEL & SUMITOMO METAL CORPORATION
- Kazuhiko Kusunoki
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR SINGLE CRYSTAL GROWTH OF PHOTOVOLTAIC PEROVSKITE MATERIA...
- Publication number 20160248028
- Publication date Aug 25, 2016
- NUTECH VENTURES
- Jinsong Huang
- C30 - CRYSTAL GROWTH
Information Patent Application
SIC SINGLE CRYSTAL AND METHOD FOR PRODUCING SAME
- Publication number 20160237590
- Publication date Aug 18, 2016
- TOYOTA JIDOSHA KABUSHIKI KAISHA
- Hironori DAIKOKU
- C30 - CRYSTAL GROWTH
Information Patent Application
N-TYPE SIC SINGLE CRYSTAL AND METHOD FOR ITS PRODUCTION
- Publication number 20160208411
- Publication date Jul 21, 2016
- Toyota Jidosha Kabushiki Kaisha
- Takayuki SHIRAI
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR PREPARING SINGLE-CRYSTAL CUBIC SESQUIOXIDES AND USES
- Publication number 20160160383
- Publication date Jun 9, 2016
- CENTRE NATIONAL DE LA RECHERCHE SCINTIFIQUE
- Philippe Veber
- C30 - CRYSTAL GROWTH
Information Patent Application
Li4Sr(BO3)2 Compound, Li4Sr(BO3)2 Nonlinear Optical Crystal, Prepa...
- Publication number 20160137515
- Publication date May 19, 2016
- Technical Institute of Physics and Chemistry, Chinese Academy of Sciences
- Guochun ZHANG
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR PRODUCING SIC SINGLE CRYSTAL
- Publication number 20160122901
- Publication date May 5, 2016
- Toyota Jidosha Kabushiki Kaisha
- Katsunori DANNO
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR PRODUCING SIC SINGLE CRYSTAL
- Publication number 20160090664
- Publication date Mar 31, 2016
- Toyota Jidosha Kabushiki Kaisha
- Katsunori DANNO
- C30 - CRYSTAL GROWTH
Information Patent Application
SIC SINGLE CRYSTAL AND METHOD FOR PRODUCING SAME
- Publication number 20160068993
- Publication date Mar 10, 2016
- Toyota Jidosha Kabushiki Kaisha
- Takayuki SHIRAI
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR PRODUCING SiC SINGLE CRYSTAL
- Publication number 20160053402
- Publication date Feb 25, 2016
- Kazuhiko KUSUNOKI
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR PRODUCING N-TYPE SIC SINGLE CRYSTAL
- Publication number 20150299896
- Publication date Oct 22, 2015
- TOYOTA JIDOSHA KABUSHIKI KAISHA
- Takayuki SHIRAI
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR PRODUCING SIC SINGLE CRYSTAL
- Publication number 20150299900
- Publication date Oct 22, 2015
- TOYOTA JIDOSHA KABUSHIKI KAISHA
- Hironori DAIKOKU
- C30 - CRYSTAL GROWTH
Information Patent Application
SINGLE CRYSTAL PRODUCTION APPARATUS, CRUCIBLE FOR USE THEREIN, AND...
- Publication number 20150225872
- Publication date Aug 13, 2015
- TOYOTA JIDOSHA KABUSHIKI KAISHA
- Kazuhito Kamei
- C30 - CRYSTAL GROWTH
Information Patent Application
SiC Single-Crystal Ingot, SiC Single Crystal, and Production Method...
- Publication number 20150191849
- Publication date Jul 9, 2015
- TOYOTA JIDOSHA KABUSHIKI KAISHA
- Takayuki Shirai
- C30 - CRYSTAL GROWTH
Information Patent Application
SIC SINGLE CRYSTAL INGOT AND PRODUCTION METHOD THEREFOR
- Publication number 20150167196
- Publication date Jun 18, 2015
- TOYOTA JIDOSHA KABUSHIKI KAISHA
- Motohisa Kado
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR PRODUCING SiC SINGLE CRYSTAL
- Publication number 20150075419
- Publication date Mar 19, 2015
- Toyota Jidosha Kabushiki Kaisha
- Motohisa Kado
- C30 - CRYSTAL GROWTH

Vertical dipping system

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

SiC single crystal and method for producing same

Preparation method and application of sodium barium fluoroborate bi...

SiC single crystal and method for producing same

Method of producing crystal

SiC single crystal and method for producing same

N-type SiC single crystal and method for its production

Method for producing crystal of silicon carbide, and crystal produc...

SiC single crystal and method for producing same

SiC single crystal production method and production apparatus

Li4Sr(BO3)2 compound, Li4Sr(BO3)2 nonlinear optical crystal, prepar...

Method for preparing single-crystal cubic sesquioxides and uses

Production method of SiC single crystal

Method for single crystal growth of photovoltaic perovskite materia...

SiC single crystal and method for producing same

SiC single-crystal ingot, SiC single crystal, and production method...

Method for producing a SiC single crystal in the presence of a magn...

Method for producing an n-type SiC single crystal from a Si—C solut...

Ferroelectric thin film having superlattice structure, manufacturin...

Method and device for fabricating a layer in semiconductor material

SiC single crystal ingot and production method therefor

Method for synthesising diamond

SiC single crystal wafer and process for production thereof

Method for preparing single-crystal cubic sesquioxides and uses the...

Method of exocasting an article of semiconducting material

Method for manufacturing nitride single crystal

Method of making an article of semiconducting material

Methods of making an article of semiconducting material on a mold c...

Liquid phase growth process, liquid phase growth system and substra...

Apparatus for producing semiconductor thin films on moving substrates

Liquid-phase growth process and liquid-phase growth apparatus

Patents Applicationslast 30 patents

SiC SINGLE CRYSTAL AND METHOD FOR PRODUCING SAME

SiC SINGLE CRYSTAL AND METHOD FOR PRODUCING SAME

APPARATUS FOR PRODUCING SiC SINGLE CRYSTAL BY SOLUTION GROWTH PROCE...

METHOD FOR PRODUCING SiC SINGLE CRYSTAL AND APPARATUS FOR PRODUCING...

METHOD FOR PRODUCING GROUP III NITRIDE CRYSTAL, AND RAMO4-CONTAININ...

Method for Producing Crystal of Silicon Carbide, and Crystal Produc...

SIC SINGLE CRYSTAL PRODUCTION METHOD AND PRODUCTION APPARATUS

SIC SINGLE CRYSTAL AND METHOD FOR PRODUCING SAME

METHOD OF MANUFACTURING SiC SINGLE CRYSTAL

PRODUCTION METHOD OF SiC SINGLE CRYSTAL

SIC SINGLE CRYSTAL AND METHOD FOR PRODUCING SAME

METHOD FOR PRODUCING SIC SINGLE CRYSTAL

METHOD OF PRODUCING CRYSTAL

PREPARATION METHOD AND APPLICATION OF SODIUM BARIUM FLUOROBORATE BI...

METHOD FOR PRODUCING SiC SINGLE CRYSTAL

METHOD FOR SINGLE CRYSTAL GROWTH OF PHOTOVOLTAIC PEROVSKITE MATERIA...

SIC SINGLE CRYSTAL AND METHOD FOR PRODUCING SAME

N-TYPE SIC SINGLE CRYSTAL AND METHOD FOR ITS PRODUCTION

METHOD FOR PREPARING SINGLE-CRYSTAL CUBIC SESQUIOXIDES AND USES

Li4Sr(BO3)2 Compound, Li4Sr(BO3)2 Nonlinear Optical Crystal, Prepa...

METHOD FOR PRODUCING SIC SINGLE CRYSTAL

METHOD FOR PRODUCING SIC SINGLE CRYSTAL

SIC SINGLE CRYSTAL AND METHOD FOR PRODUCING SAME

METHOD FOR PRODUCING SiC SINGLE CRYSTAL

METHOD FOR PRODUCING N-TYPE SIC SINGLE CRYSTAL

METHOD FOR PRODUCING SIC SINGLE CRYSTAL

SINGLE CRYSTAL PRODUCTION APPARATUS, CRUCIBLE FOR USE THEREIN, AND...

SiC Single-Crystal Ingot, SiC Single Crystal, and Production Method...

SIC SINGLE CRYSTAL INGOT AND PRODUCTION METHOD THEREFOR

METHOD FOR PRODUCING SiC SINGLE CRYSTAL