Vertical isolation by full isolation by porous oxide silicon

Industry

CPC
H01L21/7627

This industry / category may be too specific. Please go to a parent level for more data

Parent Industries

HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

Current Industry

H01L21/7627Vertical isolation by full isolation by porous oxide silicon

Industries

Patents Grantslast 30 patents

Information Patent Grant
Composite structure, intended for a planar co-integration of electr...
- Patent number 11,955,375
- Issue date Apr 9, 2024
- Commissariat a l'Energie Atomique et Aux Energies Alternatives
- Marilyne Roumanie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with isolation structures
- Patent number 11,830,773
- Issue date Nov 28, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Pei-Wei Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with sidewall interconnection structure, metho...
- Patent number 11,810,902
- Issue date Nov 7, 2023
- Institute of Microelectronics, Chinese Academy of Sciences
- Huilong Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with sidewall interconnection structure, metho...
- Patent number 11,749,650
- Issue date Sep 5, 2023
- Institute of Microelectronics, Chinese Academy of Sciences
- Huilong Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit structure and method with hybrid orientation for...
- Patent number 11,735,594
- Issue date Aug 22, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Tzer-Min Shen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating a strained semiconductor-on-insulator substrate
- Patent number 11,728,207
- Issue date Aug 15, 2023
- Soitec
- Walter Schwarzenbach
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multilevel semiconductor device and structure with oxide bonding
- Patent number 11,694,922
- Issue date Jul 4, 2023
- Monolithic 3D Inc.
- Zvi Or-Bach
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor level interconnection methodologies utilizing 3D interco...
- Patent number 11,688,776
- Issue date Jun 27, 2023
- Adeia Semiconductor Inc.
- Javier A. Delacruz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices
- Patent number 11,600,577
- Issue date Mar 7, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Pei-Wei Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-function substrate
- Patent number 11,532,642
- Issue date Dec 20, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd
- Eugene I-Chun Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and fabricating method of the same
- Patent number 11,075,233
- Issue date Jul 27, 2021
- Samsung Electronics Co., Ltd.
- Hoon Sung Choi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Cavity formation within and under semiconductor devices
- Patent number 11,056,382
- Issue date Jul 6, 2021
- GLOBALFOUNDRIES U.S. INC.
- Siva P. Adusumilli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor isolation structures comprising shallow trench and de...
- Patent number 11,049,932
- Issue date Jun 29, 2021
- GLOBALFOUNDRIES U.S. INC.
- Steven M. Shank
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit structure and method with hybrid orientation for...
- Patent number 11,031,418
- Issue date Jun 8, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd
- Tzer-Min Shen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Devices with backside metal structures and methods of formation the...
- Patent number 11,011,409
- Issue date May 18, 2021
- Infineon Technologies AG
- Oliver Hellmund
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for producing a semiconductor chip and semiconductor chip
- Patent number 11,004,876
- Issue date May 11, 2021
- OSRAM OLED GmbH
- Christoph Eichler
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor level interconnection methodologies utilizing 3D interco...
- Patent number 10,991,804
- Issue date Apr 27, 2021
- Xcelsis Corporation
- Javier A. Delacruz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating a strained semiconductor-on-insulator substrate
- Patent number 10,957,577
- Issue date Mar 23, 2021
- Soitec
- Walter Schwarzenbach
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Isolated semiconductor layer over buried isolation layer
- Patent number 10,886,164
- Issue date Jan 5, 2021
- Texas Instruments Incorporated
- Daniel Nelson Carothers
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming semiconductor devices
- Patent number 10,811,255
- Issue date Oct 20, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd
- Pei-Wei Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method including a conductive member withi...
- Patent number 10,804,296
- Issue date Oct 13, 2020
- Semiconductor Components Industries, LLC
- Jefferson W. Hall
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
3D microdisplay device and structure
- Patent number 10,679,977
- Issue date Jun 9, 2020
- Monolithic 3D Inc.
- Zvi Or-Bach
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor substrate structure and semiconductor device and meth...
- Patent number 10,658,228
- Issue date May 19, 2020
- Vanguard International Semiconductor Corporation
- Chih-Hung Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
3D circuit transistors with flipped gate
- Patent number 10,651,202
- Issue date May 12, 2020
- Commissariat a l'Energie Atomique et Aux Energies Alternatives
- Francois Andrieu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit capable of operating at very high voltage and me...
- Patent number 10,615,132
- Issue date Apr 7, 2020
- Alain Comeau
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacturing the same
- Patent number 10,607,883
- Issue date Mar 31, 2020
- Semiconductor Energy Laboratory Co., Ltd.
- Junya Maruyama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming semiconductor device
- Patent number 10,580,864
- Issue date Mar 3, 2020
- United Microelectronics Corp.
- Yu-Cheng Tung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical transistor with eDRAM
- Patent number 10,541,242
- Issue date Jan 21, 2020
- International Business Machines Corporation
- Alexander Reznicek
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Devices with backside metal structures and methods of formation the...
- Patent number 10,535,553
- Issue date Jan 14, 2020
- Infineon Technologies AG
- Oliver Hellmund
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit structure and method with hybrid orientation for...
- Patent number 10,535,680
- Issue date Jan 14, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd
- Tzer-Min Shen
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
EMBEDDED SOI STRUCTURE FOR LOW LEAKAGE MOS CAPACITOR
- Publication number 20240071812
- Publication date Feb 29, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chung-Lei Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Integrated Circuit Structure and Method with Hybrid Orientation for...
- Publication number 20230411399
- Publication date Dec 21, 2023
- Taiwan Semiconductor Manufacturing Co., LTD
- Tzer-Min Shen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device With Isolation Structures
- Publication number 20230386925
- Publication date Nov 30, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Pei-Wei LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND FORMING METHOD THEREOF
- Publication number 20230386895
- Publication date Nov 30, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Soon-Kang HUANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FABRICATING A STRAINED SEMICONDUCTOR-ON-INSULATOR SUBSTRATE
- Publication number 20230386896
- Publication date Nov 30, 2023
- SOITEC
- Walter Schwarzenbach
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTILEVEL SEMICONDUCTOR DEVICE AND STRUCTURE WITH OXIDE BONDING
- Publication number 20230170250
- Publication date Jun 1, 2023
- Monolithic 3D Inc.
- Zvi Or-Bach
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR LEVEL INTERCONNECTION METHODOLOGIES UTILIZING 3D INTERCO...
- Publication number 20230138732
- Publication date May 4, 2023
- Adeia Semiconductor Inc.
- Javier A. DeLaCruz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
- Publication number 20230017218
- Publication date Jan 19, 2023
- KIOXIA Corporation
- Yasuhiro UCHIYAMA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND FORMING METHOD THEREOF
- Publication number 20230016445
- Publication date Jan 19, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Soon-Kang HUANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTI-FUNCTION SUBSTRATE
- Publication number 20220352211
- Publication date Nov 3, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Eugene I-Chun Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
COMPOSITE STRUCTURE, INTENDED FOR A PLANAR CO-INTEGRATION OF ELECTR...
- Publication number 20220336266
- Publication date Oct 20, 2022
- Commissariat A L'Energie Atomique et Aux Energies Alternatives
- Marilyne ROUMANIE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTI-FUNCTION SUBSTRATE
- Publication number 20220189997
- Publication date Jun 16, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Eugene I-Chun Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH SIDEWALL INTERCONNECTION STRUCTURE, METHO...
- Publication number 20220189925
- Publication date Jun 16, 2022
- Institute of Microelectronics, Chinese Academy of Sciences
- Huilong Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH SIDEWALL INTERCONNECTION STRUCTURE, METHO...
- Publication number 20220189926
- Publication date Jun 16, 2022
- Institute of Microelectronics, Chinese Academy of Sciences
- Huilong Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FABRICATING A STRAINED SEMICONDUCTOR-ON-INSULATOR SUBSTRATE
- Publication number 20210225695
- Publication date Jul 22, 2021
- SOITEC
- Walter Schwarzenbach
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Transistor Level Interconnection Methodologies Utilizing 3D Interco...
- Publication number 20210217858
- Publication date Jul 15, 2021
- Xcelsis Corporation
- Javier A. Delacruz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES
- Publication number 20210043454
- Publication date Feb 11, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Pei-Wei Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE INCLUDING A LEADFRAME OR A DIODE BRIDGE CONFIG...
- Publication number 20200411555
- Publication date Dec 31, 2020
- Semiconductor Components Industries, LLC
- Jefferson W. HALL
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FABRICATING A STRAINED SEMICONDUCTOR-ON-INSULATOR SUBSTRATE
- Publication number 20200321243
- Publication date Oct 8, 2020
- SOITEC
- Walter Schwarzenbach
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20200294848
- Publication date Sep 17, 2020
- Semiconductor Energy Laboratory Co., Ltd.
- Junya Maruyama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
- Publication number 20200286990
- Publication date Sep 10, 2020
- Toshiba Memory Corporation
- Yasuhiro UCHIYAMA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR ISOLATION STRUCTURES AND METHODS OF FORMING SAME
- Publication number 20200203478
- Publication date Jun 25, 2020
- GLOBALFOUNDRIES INC.
- STEVEN M. SHANK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Integrated Circuit Structure and Method with Hybrid Orientation for...
- Publication number 20200152666
- Publication date May 14, 2020
- Taiwan Semiconductor Manufacturing Co., LTD
- Tzer-Min Shen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Devices with Backside Metal Structures and Methods of Formation The...
- Publication number 20200098617
- Publication date Mar 26, 2020
- INFINEON TECHNOLOGIES AG
- Oliver Hellmund
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR SUBSTRATE STRUCTURE AND SEMICONDUCTOR DEVICE AND METH...
- Publication number 20200020573
- Publication date Jan 16, 2020
- Vanguard International Semiconductor Corporation
- Chih-Hung LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR PRODUCING A SEMICONDUCTOR CHIP AND SEMICONDUCTOR CHIP
- Publication number 20190355768
- Publication date Nov 21, 2019
- Osram Opto Semiconductors GmbH
- Christoph EICHLER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Transistor Level Interconnection Methodologies Utilizing 3d Interco...
- Publication number 20190305093
- Publication date Oct 3, 2019
- Xcelsis Corporation
- Javier A. Delacruz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CAVITY FORMATION WITHIN AND UNDER SEMICONDUCTOR DEVICES
- Publication number 20190287847
- Publication date Sep 19, 2019
- GLOBALFOUNDRIES INC.
- Siva P. Adusumilli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device Including a Conductive Member Within a Trench
- Publication number 20190273094
- Publication date Sep 5, 2019
- Semiconductor Components Industries, LLC
- Jefferson W. HALL
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LATERALLY DIFFUSED MOSFET ON FULLY DEPLETED SOI
- Publication number 20190245082
- Publication date Aug 8, 2019
- Avago Technologies International Sales Pte. Limited
- Qing LIU
- H01 - BASIC ELECTRIC ELEMENTS

Vertical isolation by full isolation by porous oxide silicon

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Composite structure, intended for a planar co-integration of electr...

Semiconductor device with isolation structures

Semiconductor device with sidewall interconnection structure, metho...

Semiconductor device with sidewall interconnection structure, metho...

Integrated circuit structure and method with hybrid orientation for...

Method for fabricating a strained semiconductor-on-insulator substrate

Multilevel semiconductor device and structure with oxide bonding

Transistor level interconnection methodologies utilizing 3D interco...

Semiconductor devices

Multi-function substrate

Semiconductor device and fabricating method of the same

Cavity formation within and under semiconductor devices

Semiconductor isolation structures comprising shallow trench and de...

Integrated circuit structure and method with hybrid orientation for...

Devices with backside metal structures and methods of formation the...

Method for producing a semiconductor chip and semiconductor chip

Transistor level interconnection methodologies utilizing 3D interco...

Method for fabricating a strained semiconductor-on-insulator substrate

Isolated semiconductor layer over buried isolation layer

Methods of forming semiconductor devices

Semiconductor device and method including a conductive member withi...

3D microdisplay device and structure

Semiconductor substrate structure and semiconductor device and meth...

3D circuit transistors with flipped gate

Integrated circuit capable of operating at very high voltage and me...

Semiconductor device and method of manufacturing the same

Method of forming semiconductor device

Vertical transistor with eDRAM

Devices with backside metal structures and methods of formation the...

Integrated circuit structure and method with hybrid orientation for...

Patents Applicationslast 30 patents

EMBEDDED SOI STRUCTURE FOR LOW LEAKAGE MOS CAPACITOR

Integrated Circuit Structure and Method with Hybrid Orientation for...

Semiconductor Device With Isolation Structures

SEMICONDUCTOR STRUCTURE AND FORMING METHOD THEREOF

METHOD FOR FABRICATING A STRAINED SEMICONDUCTOR-ON-INSULATOR SUBSTRATE

MULTILEVEL SEMICONDUCTOR DEVICE AND STRUCTURE WITH OXIDE BONDING

TRANSISTOR LEVEL INTERCONNECTION METHODOLOGIES UTILIZING 3D INTERCO...

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE

SEMICONDUCTOR STRUCTURE AND FORMING METHOD THEREOF

MULTI-FUNCTION SUBSTRATE

COMPOSITE STRUCTURE, INTENDED FOR A PLANAR CO-INTEGRATION OF ELECTR...

MULTI-FUNCTION SUBSTRATE

SEMICONDUCTOR DEVICE WITH SIDEWALL INTERCONNECTION STRUCTURE, METHO...

SEMICONDUCTOR DEVICE WITH SIDEWALL INTERCONNECTION STRUCTURE, METHO...

METHOD FOR FABRICATING A STRAINED SEMICONDUCTOR-ON-INSULATOR SUBSTRATE

Transistor Level Interconnection Methodologies Utilizing 3D Interco...

SEMICONDUCTOR DEVICES

SEMICONDUCTOR DEVICE INCLUDING A LEADFRAME OR A DIODE BRIDGE CONFIG...

METHOD FOR FABRICATING A STRAINED SEMICONDUCTOR-ON-INSULATOR SUBSTRATE

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE

SEMICONDUCTOR ISOLATION STRUCTURES AND METHODS OF FORMING SAME

Integrated Circuit Structure and Method with Hybrid Orientation for...

Devices with Backside Metal Structures and Methods of Formation The...

SEMICONDUCTOR SUBSTRATE STRUCTURE AND SEMICONDUCTOR DEVICE AND METH...

METHOD FOR PRODUCING A SEMICONDUCTOR CHIP AND SEMICONDUCTOR CHIP

Transistor Level Interconnection Methodologies Utilizing 3d Interco...

CAVITY FORMATION WITHIN AND UNDER SEMICONDUCTOR DEVICES

Semiconductor Device Including a Conductive Member Within a Trench

LATERALLY DIFFUSED MOSFET ON FULLY DEPLETED SOI