Vertical transistors

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H01L29/66909

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

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H01L29/66909Vertical transistors

Industries

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Patents Grantslast 30 patents

Information Patent Grant
GaN vertical-channel junction field-effect transistors with regrown...
- Patent number 12,159,943
- Issue date Dec 3, 2024
- Arizona Board of Regents on behalf of Arizona State University
- Yuji Zhao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating super-junction based vertical gallium nitride...
- Patent number 12,080,757
- Issue date Sep 3, 2024
- SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- Hao Cui
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fabrication method for JFET with implant isolation
- Patent number 11,929,440
- Issue date Mar 12, 2024
- NEXGEN POWER SYSTEMS, INC.
- Clifford Drowley
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Regrowth uniformity in GaN vertical devices
- Patent number 11,916,134
- Issue date Feb 27, 2024
- NEXGEN POWER SYSTEMS, INC.
- Clifford Drowley
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating super-junction based vertical gallium nitride...
- Patent number 11,824,086
- Issue date Nov 21, 2023
- NEXGEN POWER SYSTEMS, INC.
- Hao Cui
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing semiconductor device having JFET
- Patent number 11,784,244
- Issue date Oct 10, 2023
- Denso Corporation
- Kenji Kono
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
JFET with implant isolation
- Patent number 11,637,209
- Issue date Apr 25, 2023
- NEXGEN POWER SYSTEMS, INC.
- Clifford Drowley
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Sawtooh electric field drift region structure for planar and trench...
- Patent number 11,594,613
- Issue date Feb 28, 2023
- Alpha & Omega Semiconductor, Ltd.
- Madhur Bobde
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Super-junction based vertical gallium nitride JFET power devices
- Patent number 11,575,000
- Issue date Feb 7, 2023
- NEXGEN POWER SYSTEMS, INC.
- Hao Cui
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
GaN vertical-channel junction field-effect transistors with regrown...
- Patent number 11,495,694
- Issue date Nov 8, 2022
- Arizona Board of Regents on behalf of Arizona State University
- Yuji Zhao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical JFET device for memristor array interface
- Patent number 11,322,545
- Issue date May 3, 2022
- Hewlett Packard Enterprise Development LP
- Amit S. Sharma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 11,282,946
- Issue date Mar 22, 2022
- Fuji Electric Co., Ltd.
- Takeyoshi Nishimura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low-noise gate-all-around junction field effect transistor
- Patent number 11,271,108
- Issue date Mar 8, 2022
- International Business Machines Corporation
- Bahman Hekmatshoartabari
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Stacked complementary junction FETs for analog electronic circuits
- Patent number 11,251,185
- Issue date Feb 15, 2022
- International Business Machines Corporation
- Karthik Balakrishnan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Sawtooh electric field drift region structure for planar and trench...
- Patent number 11,038,037
- Issue date Jun 15, 2021
- Alpha and Omega Semiconductor Incorporated
- Madhur Bobde
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrating a junction field effect transistor into a vertical fiel...
- Patent number 11,011,513
- Issue date May 18, 2021
- International Business Machines Corporation
- Brent A. Anderson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical gate-all-around TFET
- Patent number 10,910,385
- Issue date Feb 2, 2021
- STMicroelectronics, Inc.
- John H. Zhang
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Device integrated with junction field effect transistor and method...
- Patent number 10,872,823
- Issue date Dec 22, 2020
- CSMC Technologies FAB2 Co., Ltd.
- Yan Gu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low voltage (power) junction FET with all-around junction gate
- Patent number 10,777,555
- Issue date Sep 15, 2020
- International Business Machines Corporation
- Karthik Balakrishnan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method manufacturing the same
- Patent number 10,727,302
- Issue date Jul 28, 2020
- Hyundai Motor Company
- Nack Yong Joo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low voltage (power) junction FET with all-around junction gate
- Patent number 10,573,648
- Issue date Feb 25, 2020
- International Business Machines Corporation
- Karthik Balakrishnan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacturing the same
- Patent number 10,559,701
- Issue date Feb 11, 2020
- Hyundai Motor Company
- Dae Hwan Chun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Stacked complementary junction FETs for analog electronic circuits
- Patent number 10,553,586
- Issue date Feb 4, 2020
- International Business Machines Corporation
- Karthik Balakrishnan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrating a junction field effect transistor into a vertical fiel...
- Patent number 10,504,889
- Issue date Dec 10, 2019
- International Business Machines Corporation
- Brent A. Anderson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field-effect semiconductor device having a heterojunction contact
- Patent number 10,461,074
- Issue date Oct 29, 2019
- Infineon Technologies Austria AG
- Wolfgang Werner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Planar multi-implanted JFET
- Patent number 10,446,695
- Issue date Oct 15, 2019
- United Silicone Carbide, Inc.
- Anup Bhalla
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical gate-all-around TFET
- Patent number 10,388,659
- Issue date Aug 20, 2019
- STMicroelectronics, Inc.
- John H. Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Stacked complementary junction FETs for analog electronic circuits
- Patent number 10,381,349
- Issue date Aug 13, 2019
- International Business Machines Corporation
- Karthik Balakrishnan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical JFET made using a reduced masked set
- Patent number 10,367,098
- Issue date Jul 30, 2019
- United Silicon Carbide, Inc.
- Zhongda Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench vertical JFET with ladder termination
- Patent number 10,367,099
- Issue date Jul 30, 2019
- United Silicon Carbide, Inc.
- Zhongda Li
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
METHOD OF FABRICATING SUPER-JUNCTION BASED VERTICAL GALLIUM NITRIDE...
- Publication number 20240371929
- Publication date Nov 7, 2024
- SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- Hao CUI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Structure and Manufacturing Method Thereof
- Publication number 20240355812
- Publication date Oct 24, 2024
- DIODES INCORPORATED
- Chiao-Shun Chuang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FABRICATION METHOD FOR JFET WITH IMPLANT ISOLATION
- Publication number 20240274725
- Publication date Aug 15, 2024
- SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- Clifford Drowley
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
REGROWTH UNIFORMITY IN GAN VERTICAL DEVICES
- Publication number 20240258408
- Publication date Aug 1, 2024
- SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- Clifford Drowley
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND METHOD OF FORMING THEREOF
- Publication number 20240120410
- Publication date Apr 11, 2024
- Hon Young Semiconductor Corporation
- Yu-Tsu LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND METHOD OF FORMING THEREOF
- Publication number 20240120411
- Publication date Apr 11, 2024
- Hon Young Semiconductor Corporation
- Yu-Tsu LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FABRICATING SUPER-JUNCTION BASED VERTICAL GALLIUM NITRIDE...
- Publication number 20240105767
- Publication date Mar 28, 2024
- NEXGEN POWER SYSTEMS, INC.
- Hao Cui
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL JUNCTION FIELD EFFECT TRANSISTOR INCLUDING A PLURALITY OF...
- Publication number 20240079503
- Publication date Mar 7, 2024
- Infineon Technologies Austria AG
- Hans Weber
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POWER SEMICONDUCTOR DEVICE WITH SHALLOW CONDUCTION REGION
- Publication number 20230327026
- Publication date Oct 12, 2023
- Wolfspeed, Inc.
- Rahul R. Potera
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FABRICATION METHOD FOR JFET WITH IMPLANT ISOLATION
- Publication number 20230215958
- Publication date Jul 6, 2023
- NEXGEN POWER SYSTEMS, INC.
- Clifford Drowley
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FABRICATING SUPER-JUNCTION BASED VERTICAL GALLIUM NITRIDE...
- Publication number 20230127978
- Publication date Apr 27, 2023
- NEXGEN POWER SYSTEMS, INC.
- Hao Cui
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GaN VERTICAL-CHANNEL JUNCTION FIELD-EFFECT TRANSISTORS WITH REGROWN...
- Publication number 20230106300
- Publication date Apr 6, 2023
- Yuji Zhao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GaN VERTICAL-CHANNEL JUNCTION FIELD-EFFECT TRANSISTORS WITH REGROWN...
- Publication number 20220013671
- Publication date Jan 13, 2022
- Yuji Zhao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND SYSTEM FOR SUPER-JUNCTION BASED VERTICAL GALLIUM NITRIDE...
- Publication number 20210399091
- Publication date Dec 23, 2021
- NEXGEN POWER SYSTEMS, INC.
- Hao Cui
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20210375855
- Publication date Dec 2, 2021
- Fuji Electric Co., Ltd.
- Takeyoshi Nishimura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE HAVING JFET
- Publication number 20210328048
- Publication date Oct 21, 2021
- DENSO CORPORATION
- Kenji KONO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOW-NOISE GATE-ALL-AROUND JUNCTION FIELD EFFECT TRANSISTOR
- Publication number 20210320205
- Publication date Oct 14, 2021
- International Business Machines Corporation
- Bahman Hekmatshoartabari
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SAWTOOH ELECTRIC FIELD DRIFT REGION STRUCTURE FOR PLANAR AND TRENCH...
- Publication number 20210305406
- Publication date Sep 30, 2021
- ALPHA & OMEGA SEMICONDUCTOR INCORPORATED
- Madhur Bobde
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
REGROWTH UNIFORMITY IN GAN VERTICAL DEVICES
- Publication number 20210210624
- Publication date Jul 8, 2021
- NEXGEN POWER SYSTEMS, INC.
- Clifford Drowley
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND SYSTEM FOR JFET WITH IMPLANT ISOLATION
- Publication number 20210193846
- Publication date Jun 24, 2021
- NEXGEN POWER SYSTEMS, INC.
- Clifford Drowley
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL JFET DEVICE FOR MEMRISTOR ARRAY INTERFACE
- Publication number 20210036058
- Publication date Feb 4, 2021
- HEWLETT PACKARD ENTERPRISE DEVELOPMENT LP
- Amit S. Sharma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SAWTOOH ELECTRIC FIELD DRIFT REGION STRUCTURE FOR PLANAR AND TRENCH...
- Publication number 20200303513
- Publication date Sep 24, 2020
- ALPHA & OMEGA SEMICONDUCTOR INCORPORATED
- Madhur Bobde
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATING A JUNCTION FIELD EFFECT TRANSISTOR INTO A VERTICAL FIEL...
- Publication number 20200066711
- Publication date Feb 27, 2020
- International Business Machines Corporation
- Brent A. Anderson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL GATE-ALL-AROUND TFET
- Publication number 20200006350
- Publication date Jan 2, 2020
- STMicroelectronics, Inc.
- John H. Zhang
- B82 - NANO-TECHNOLOGY
Information Patent Application
LOW VOLTAGE (POWER) JUNCTION FET WITH ALL-AROUND JUNCTION GATE
- Publication number 20190341382
- Publication date Nov 7, 2019
- International Business Machines Corporation
- Karthik Balakrishnan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20190334036
- Publication date Oct 31, 2019
- Hyundai Motor Company
- Dae Hwan Chun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FABRICATING A JFET TRANSISTOR WITHIN AN INTEGRATED CIRCU...
- Publication number 20190296007
- Publication date Sep 26, 2019
- STMicroelectronics (Crolles 2) SAS
- Jean Jimenez
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEVICE INTEGRATED WITH JUNCTION FIELD EFFECT TRANSISTOR AND METHOD...
- Publication number 20190259669
- Publication date Aug 22, 2019
- CSMC TECHNOLOGIES FAB2 CO., LTD.
- Yan GU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STACKED COMPLEMENTARY JUNCTION FETS FOR ANALOG ELECTRONIC CIRCUITS
- Publication number 20190259755
- Publication date Aug 22, 2019
- International Business Machines Corporation
- Karthik Balakrishnan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STACKED COMPLEMENTARY JUNCTION FETS FOR ANALOG ELECTRONIC CIRCUITS
- Publication number 20190259756
- Publication date Aug 22, 2019
- International Business Machines Corporation
- Karthik Balakrishnan
- H01 - BASIC ELECTRIC ELEMENTS

Vertical transistors

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

GaN vertical-channel junction field-effect transistors with regrown...

Method of fabricating super-junction based vertical gallium nitride...

Fabrication method for JFET with implant isolation

Regrowth uniformity in GaN vertical devices

Method of fabricating super-junction based vertical gallium nitride...

Method for manufacturing semiconductor device having JFET

JFET with implant isolation

Sawtooh electric field drift region structure for planar and trench...

Super-junction based vertical gallium nitride JFET power devices

GaN vertical-channel junction field-effect transistors with regrown...

Vertical JFET device for memristor array interface

Semiconductor device

Low-noise gate-all-around junction field effect transistor

Stacked complementary junction FETs for analog electronic circuits

Sawtooh electric field drift region structure for planar and trench...

Integrating a junction field effect transistor into a vertical fiel...

Vertical gate-all-around TFET

Device integrated with junction field effect transistor and method...

Low voltage (power) junction FET with all-around junction gate

Semiconductor device and method manufacturing the same

Low voltage (power) junction FET with all-around junction gate

Semiconductor device and method of manufacturing the same

Stacked complementary junction FETs for analog electronic circuits

Integrating a junction field effect transistor into a vertical fiel...

Field-effect semiconductor device having a heterojunction contact

Planar multi-implanted JFET

Vertical gate-all-around TFET

Stacked complementary junction FETs for analog electronic circuits

Vertical JFET made using a reduced masked set

Trench vertical JFET with ladder termination

Patents Applicationslast 30 patents

METHOD OF FABRICATING SUPER-JUNCTION BASED VERTICAL GALLIUM NITRIDE...

Semiconductor Structure and Manufacturing Method Thereof

FABRICATION METHOD FOR JFET WITH IMPLANT ISOLATION

REGROWTH UNIFORMITY IN GAN VERTICAL DEVICES

SEMICONDUCTOR STRUCTURE AND METHOD OF FORMING THEREOF

SEMICONDUCTOR STRUCTURE AND METHOD OF FORMING THEREOF

METHOD OF FABRICATING SUPER-JUNCTION BASED VERTICAL GALLIUM NITRIDE...

VERTICAL JUNCTION FIELD EFFECT TRANSISTOR INCLUDING A PLURALITY OF...

POWER SEMICONDUCTOR DEVICE WITH SHALLOW CONDUCTION REGION

FABRICATION METHOD FOR JFET WITH IMPLANT ISOLATION

METHOD OF FABRICATING SUPER-JUNCTION BASED VERTICAL GALLIUM NITRIDE...

GaN VERTICAL-CHANNEL JUNCTION FIELD-EFFECT TRANSISTORS WITH REGROWN...

GaN VERTICAL-CHANNEL JUNCTION FIELD-EFFECT TRANSISTORS WITH REGROWN...

METHOD AND SYSTEM FOR SUPER-JUNCTION BASED VERTICAL GALLIUM NITRIDE...

SEMICONDUCTOR DEVICE

METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE HAVING JFET

LOW-NOISE GATE-ALL-AROUND JUNCTION FIELD EFFECT TRANSISTOR

SAWTOOH ELECTRIC FIELD DRIFT REGION STRUCTURE FOR PLANAR AND TRENCH...

REGROWTH UNIFORMITY IN GAN VERTICAL DEVICES

METHOD AND SYSTEM FOR JFET WITH IMPLANT ISOLATION

VERTICAL JFET DEVICE FOR MEMRISTOR ARRAY INTERFACE

SAWTOOH ELECTRIC FIELD DRIFT REGION STRUCTURE FOR PLANAR AND TRENCH...

INTEGRATING A JUNCTION FIELD EFFECT TRANSISTOR INTO A VERTICAL FIEL...

VERTICAL GATE-ALL-AROUND TFET

LOW VOLTAGE (POWER) JUNCTION FET WITH ALL-AROUND JUNCTION GATE

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

METHOD FOR FABRICATING A JFET TRANSISTOR WITHIN AN INTEGRATED CIRCU...

DEVICE INTEGRATED WITH JUNCTION FIELD EFFECT TRANSISTOR AND METHOD...

STACKED COMPLEMENTARY JUNCTION FETS FOR ANALOG ELECTRONIC CIRCUITS

STACKED COMPLEMENTARY JUNCTION FETS FOR ANALOG ELECTRONIC CIRCUITS