where the source and drain or source and drain extensions are self-aligned to the sides of the gate

Industry

CPC
H01L29/66575

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Parent Industries

HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

Current Industry

H01L29/66575where the source and drain or source and drain extensions are self-aligned to the sides of the gate

Industries

Patents Grantslast 30 patents

Information Patent Grant
High voltage polysilicon gate in high-K metal gate device
- Patent number 11,950,413
- Issue date Apr 2, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Meng-Han Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for fabricating the same
- Patent number 11,901,437
- Issue date Feb 13, 2024
- Marlin Semiconductor Limited
- Te-Chang Hsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET structure with doped region
- Patent number 11,855,176
- Issue date Dec 26, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Shahaji B. More
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Doping profile for strained source/drain region
- Patent number 11,749,752
- Issue date Sep 5, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Hsueh-Chang Sung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating semiconductor device having epitaxial structure
- Patent number 11,735,661
- Issue date Aug 22, 2023
- United Microelectronics Corp.
- Kuang-Hsiu Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for manufacturing same
- Patent number 11,728,378
- Issue date Aug 15, 2023
- Semiconductor Manufacturing International (Beijing) Corporation
- Poren Tang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming transistors of different configurations
- Patent number 11,715,803
- Issue date Aug 1, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Wei-Lun Min
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating semiconductor structure
- Patent number 11,705,492
- Issue date Jul 18, 2023
- United Microelectronics Corp.
- Yi-Fan Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating semiconductor device
- Patent number 11,688,813
- Issue date Jun 27, 2023
- Samsung Electronics Co., Ltd.
- Seung Mo Kang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure and formation method of semiconductor device structure wi...
- Patent number 11,682,710
- Issue date Jun 20, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Yi-Ching Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure and manufacturing method thereof
- Patent number 11,631,750
- Issue date Apr 18, 2023
- Taiwan Semiconductor Manufacturing Company Ltd.
- Shiang-Bau Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having high voltage transistors
- Patent number 11,575,009
- Issue date Feb 7, 2023
- Samsung Electronics Co., Ltd.
- Sungkweon Baek
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
DEPOP using cyclic selective spacer etch
- Patent number 11,569,370
- Issue date Jan 31, 2023
- Intel Corporation
- Leonard P. Guler
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High voltage polysilicon gate in high-K metal gate device
- Patent number 11,569,251
- Issue date Jan 31, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Meng-Han Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device comprising a deep trench isolation structure a...
- Patent number 11,521,891
- Issue date Dec 6, 2022
- United Microelectronics Corp.
- Purakh Raj Verma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Wrap around silicide for FinFETs
- Patent number 11,437,479
- Issue date Sep 6, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Kuo-Cheng Chiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
ESD protection in an electronic device
- Patent number 11,430,749
- Issue date Aug 30, 2022
- Infineon Technologies AG
- Markus Mergens
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
NPN heterojunction bipolar transistor in CMOS flow
- Patent number 11,417,646
- Issue date Aug 16, 2022
- Texas Instruments Incorporated
- Manoj Mehrotra
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming transistors of different configurations
- Patent number 11,362,217
- Issue date Jun 14, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd
- Wei-Lun Min
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for fabricating the same
- Patent number 11,355,619
- Issue date Jun 7, 2022
- Marlin Semiconductor Limited
- Te-Chang Hsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Device having physically unclonable function, method for manufactur...
- Patent number 11,309,262
- Issue date Apr 19, 2022
- Semiconductor Manufacturing International (Shanghai) Corporation
- Dong Wang
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Semiconductor structure and manufacturing method thereof
- Patent number 11,282,941
- Issue date Mar 22, 2022
- Taiwan Semiconductor Manufacturing Company Ltd.
- Shiang-Bau Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure and forming method thereof
- Patent number 11,257,927
- Issue date Feb 22, 2022
- Semiconductor Manufacturing International (Shanghai) Corporation
- Yang Hu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices and methods of manufacturing semiconductor de...
- Patent number 11,251,036
- Issue date Feb 15, 2022
- Imec VZW
- Shairfe Muhammad Salahuddin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of fabricating the same
- Patent number 11,251,313
- Issue date Feb 15, 2022
- Samsung Electronics Co., Ltd.
- Seung Mo Kang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor arrangement and formation thereof
- Patent number 11,239,340
- Issue date Feb 1, 2022
- Taiwan Semiconductor Manufacturing Company Limited
- Tai-I Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Device with pure silicon oxide layer on silicon-germanium layer
- Patent number 11,217,450
- Issue date Jan 4, 2022
- International Business Machines Corporation
- Takashi Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming semiconductor contact structure
- Patent number 11,195,791
- Issue date Dec 7, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd
- Yu-Wen Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 11,145,729
- Issue date Oct 12, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chi-Feng Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having active region and method for fabricatin...
- Patent number 11,133,227
- Issue date Sep 28, 2021
- XIA TAI XIN SEMICONDUCTOR (QING DAO) LTD.
- Deok-Yong Kim
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR STRUCTURE AND METHOD FOR MANUFACTURING SAME
- Publication number 20240047580
- Publication date Feb 8, 2024
- CHANGXIN MEMORY TECHNOLOGIES, INC
- Yi TANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DOPING PROFILE FOR STRAINED SOURCE/DRAIN REGION
- Publication number 20230369491
- Publication date Nov 16, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Hsueh-Chang Sung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING TRANSISTORS OF DIFFERENT CONFIGURATIONS
- Publication number 20230369513
- Publication date Nov 16, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Wei-Lun Min
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF
- Publication number 20230369460
- Publication date Nov 16, 2023
- United Microelectronics Corp.
- Kuang-Hsiu Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FABRICATING SEMICONDUCTOR DEVICE
- Publication number 20230352587
- Publication date Nov 2, 2023
- UNITED MICROELECTRONICS CORP.
- Kuang-Hsiu Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING SEMICONDUCTOR DEVICE STRUCTURE WITH GATE STRUCTURE
- Publication number 20230275138
- Publication date Aug 31, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yi-Ching HUANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THEREOF
- Publication number 20230119077
- Publication date Apr 20, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ching-Hung Kao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH VOLTAGE POLYSILICON GATE IN HIGH-K METAL GATE DEVICE
- Publication number 20230109700
- Publication date Apr 13, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Meng-Han Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Wrap Around Silicide for FinFETs
- Publication number 20220352329
- Publication date Nov 3, 2022
- Taiwan Semiconductor Manufacturing Co, LTD.
- Kuo-Cheng Chiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING TRANSISTORS OF DIFFERENT CONFIGURATIONS
- Publication number 20220310851
- Publication date Sep 29, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Wei-Lun Min
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL DEVICE WITH VERTICAL CORE AND BUNDLED WIRING
- Publication number 20220293523
- Publication date Sep 15, 2022
- TOKYO ELECTRON LIMITED
- Mark I. Gardner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
- Publication number 20220278225
- Publication date Sep 1, 2022
- Marlin Semiconductor Limited
- Te-Chang Hsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF
- Publication number 20220208993
- Publication date Jun 30, 2022
- Taiwan Semiconductor Manufacturing company Ltd.
- SHIANG-BAU WANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING TRANSISTORS OF DIFFERENT CONFIGURATIONS
- Publication number 20220165881
- Publication date May 26, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Wei-Lun Min
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FABRICATING SEMICONDUCTOR DEVICE
- Publication number 20220149210
- Publication date May 12, 2022
- Samsung Electronics Co., Ltd.
- Seung Mo KANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FABRICATION OF SILICON CARBIDE INTEGRATED POWER MOSFETS ON A SINGLE...
- Publication number 20220115502
- Publication date Apr 14, 2022
- CoolCAD Electronics, LLC
- Neil GOLDSMAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
- Publication number 20210351066
- Publication date Nov 11, 2021
- UNITED MICROELECTRONICS CORP.
- Purakh Raj Verma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
- Publication number 20210296159
- Publication date Sep 23, 2021
- UNITED MICROELECTRONICS CORP.
- Purakh Raj Verma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FABRICATING SEMICONDUCTOR DEVICE
- Publication number 20210280717
- Publication date Sep 9, 2021
- UNITED MICROELECTRONICS CORP.
- Kuang-Hsiu Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FABRICATING SEMICONDUCTOR STRUCTURE
- Publication number 20210257471
- Publication date Aug 19, 2021
- UNITED MICROELECTRONICS CORP.
- Yi-Fan Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for FinFET LDD Doping
- Publication number 20210242310
- Publication date Aug 5, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chun Hsiung Tsai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device and Method for Manufacturing Same
- Publication number 20210210597
- Publication date Jul 8, 2021
- Semiconductor Manufacturing International (Beijing) Corporation
- Poren TANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DOPING PROFILE FOR STRAINED SOURCE/DRAIN REGION
- Publication number 20210119048
- Publication date Apr 22, 2021
- Taiwan Semiconductor Manufacturing Co., LTD
- Hsueh-Chang Sung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH VOLTAGE POLYSILICON GATE IN HIGH-K METAL GATE DEVICE
- Publication number 20210043638
- Publication date Feb 11, 2021
- Taiwan Semiconductor Manufacturing Co., LTD
- Meng-Han Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEVICE HAVING PHYSICALLY UNCLONABLE FUNCTION, METHOD FOR MANUFACTUR...
- Publication number 20210035925
- Publication date Feb 4, 2021
- Semiconductor Manufacturing International (Shanghai) Corporation
- Dong Wang
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
SELF-ALIGNED GATE ENDCAP (SAGE) ARCHITECTURE HAVING VERTICAL TRANSI...
- Publication number 20200411665
- Publication date Dec 31, 2020
- Intel Corporation
- Walid M. HAFEZ
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEPOP USING CYCLIC SELECTIVE SPACER ETCH
- Publication number 20200411661
- Publication date Dec 31, 2020
- Intel Corporation
- Leonard P. GULER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FINFET STRUCTURE WITH DOPED REGION
- Publication number 20200381534
- Publication date Dec 3, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Shahaji B. MORE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURE AND FORMATION METHOD OF SEMICONDUCTOR DEVICE STRUCTURE WI...
- Publication number 20200335595
- Publication date Oct 22, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Yi-Ching HUANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR ARRANGEMENT AND FORMATION THEREOF
- Publication number 20200303516
- Publication date Sep 24, 2020
- Taiwan Semiconductor Manufacturing Company Limited
- Tai-I Yang
- H01 - BASIC ELECTRIC ELEMENTS

where the source and drain or source and drain extensions are self-aligned to the sides of the gate

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

High voltage polysilicon gate in high-K metal gate device

Semiconductor device and method for fabricating the same

FinFET structure with doped region

Doping profile for strained source/drain region

Method of fabricating semiconductor device having epitaxial structure

Semiconductor device and method for manufacturing same

Method of forming transistors of different configurations

Method for fabricating semiconductor structure

Method of fabricating semiconductor device

Structure and formation method of semiconductor device structure wi...

Semiconductor structure and manufacturing method thereof

Semiconductor device having high voltage transistors

DEPOP using cyclic selective spacer etch

High voltage polysilicon gate in high-K metal gate device

Semiconductor device comprising a deep trench isolation structure a...

Wrap around silicide for FinFETs

ESD protection in an electronic device

NPN heterojunction bipolar transistor in CMOS flow

Method of forming transistors of different configurations

Semiconductor device and method for fabricating the same

Device having physically unclonable function, method for manufactur...

Semiconductor structure and manufacturing method thereof

Semiconductor structure and forming method thereof

Semiconductor devices and methods of manufacturing semiconductor de...

Semiconductor device and method of fabricating the same

Semiconductor arrangement and formation thereof

Device with pure silicon oxide layer on silicon-germanium layer

Method for forming semiconductor contact structure

Semiconductor device

Semiconductor device having active region and method for fabricatin...

Patents Applicationslast 30 patents

SEMICONDUCTOR STRUCTURE AND METHOD FOR MANUFACTURING SAME

DOPING PROFILE FOR STRAINED SOURCE/DRAIN REGION

METHOD OF FORMING TRANSISTORS OF DIFFERENT CONFIGURATIONS

SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF

METHOD OF FABRICATING SEMICONDUCTOR DEVICE

METHOD OF FORMING SEMICONDUCTOR DEVICE STRUCTURE WITH GATE STRUCTURE

SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THEREOF

HIGH VOLTAGE POLYSILICON GATE IN HIGH-K METAL GATE DEVICE

Wrap Around Silicide for FinFETs

METHOD OF FORMING TRANSISTORS OF DIFFERENT CONFIGURATIONS

THREE-DIMENSIONAL DEVICE WITH VERTICAL CORE AND BUNDLED WIRING

SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF

METHOD OF FORMING TRANSISTORS OF DIFFERENT CONFIGURATIONS

METHOD OF FABRICATING SEMICONDUCTOR DEVICE

FABRICATION OF SILICON CARBIDE INTEGRATED POWER MOSFETS ON A SINGLE...

SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

METHOD OF FABRICATING SEMICONDUCTOR DEVICE

METHOD FOR FABRICATING SEMICONDUCTOR STRUCTURE

Method for FinFET LDD Doping

Semiconductor Device and Method for Manufacturing Same

DOPING PROFILE FOR STRAINED SOURCE/DRAIN REGION

HIGH VOLTAGE POLYSILICON GATE IN HIGH-K METAL GATE DEVICE

DEVICE HAVING PHYSICALLY UNCLONABLE FUNCTION, METHOD FOR MANUFACTUR...

SELF-ALIGNED GATE ENDCAP (SAGE) ARCHITECTURE HAVING VERTICAL TRANSI...

DEPOP USING CYCLIC SELECTIVE SPACER ETCH

FINFET STRUCTURE WITH DOPED REGION

STRUCTURE AND FORMATION METHOD OF SEMICONDUCTOR DEVICE STRUCTURE WI...

SEMICONDUCTOR ARRANGEMENT AND FORMATION THEREOF