with a barrier layer between the silicon and the metal or metal silicide upper layer

Industry

CPC
H01L29/4941

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Parent Industries

HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

Current Industry

H01L29/4941with a barrier layer between the silicon and the metal or metal silicide upper layer

Industries

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Patents Grantslast 30 patents

Information Patent Grant
Semiconductor structure and a manufacturing method thereof
- Patent number 12,166,133
- Issue date Dec 10, 2024
- CHANGXIN MEMORY TECHNOLOGIES, INC.
- Qiang Long
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having buried gate structure and method for fa...
- Patent number 11,935,939
- Issue date Mar 19, 2024
- SK Hynix Inc.
- Dong-Soo Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of cutting metal gates and structures formed thereof
- Patent number 11,923,251
- Issue date Mar 5, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Tsu-Hsiu Perng
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Semiconductor device
- Patent number 11,908,929
- Issue date Feb 20, 2024
- Fuji Electric Co., Ltd.
- Keiji Okumura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating a field-effect transistor with size-reduced...
- Patent number 11,894,424
- Issue date Feb 6, 2024
- POSTECH Research and Business Development Foundation
- Rock Hyun Baek
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating a semiconductor device
- Patent number 11,830,874
- Issue date Nov 28, 2023
- Samsung Electronics Co., Ltd.
- Geunwoo Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for fabricating the same
- Patent number 11,799,012
- Issue date Oct 24, 2023
- United Microelectronics Corp.
- Chun-Chieh Chiu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for fabricating the same
- Patent number 11,784,051
- Issue date Oct 10, 2023
- SK Hynix Inc.
- Young-Gwang Yoon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices having a decreasing height gate structure
- Patent number 11,690,213
- Issue date Jun 27, 2023
- Samsung Electronics Co., Ltd.
- Dongkyun Lim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Shielded gate trench semiconductor apparatus and manufacturing meth...
- Patent number 11,646,355
- Issue date May 9, 2023
- HUAYI MICROELECTRONICS CO., LTD.
- Yi Su
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of cutting metal gates and structures formed thereof
- Patent number 11,545,400
- Issue date Jan 3, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Tsu-Hsiu Perng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices and methods of fabricating the same
- Patent number 11,495,597
- Issue date Nov 8, 2022
- Samsung Electronics Co., Ltd.
- Moon-Kyu Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 11,489,071
- Issue date Nov 1, 2022
- Fuji Electric Co., Ltd.
- Keiji Okumura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for fabricating the same
- Patent number 11,404,326
- Issue date Aug 2, 2022
- SK Hynix Inc.
- Keon Yoo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with diffusion barrier in the active contact
- Patent number 11,233,050
- Issue date Jan 25, 2022
- Samsung Electronics Co., Ltd.
- Geunwoo Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate structure with barrier layer and method for forming the same
- Patent number 11,201,227
- Issue date Dec 14, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd
- Hsin-Yun Hsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having buried gate structure and method for fa...
- Patent number 11,183,579
- Issue date Nov 23, 2021
- SK Hynix Inc.
- Dong-Soo Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MOSFET structure, and manufacturing method thereof
- Patent number 11,158,736
- Issue date Oct 26, 2021
- CSMC Technologies FAB2 Co., Ltd.
- Tse-Huang Lo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of cutting metal gates and structures formed thereof
- Patent number 11,152,267
- Issue date Oct 19, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd
- Tsu-Hsiu Perng
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Semiconductor device and method for fabricating the same
- Patent number 11,152,212
- Issue date Oct 19, 2021
- SK Hynix Inc.
- Young-Gwang Yoon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 11,121,248
- Issue date Sep 14, 2021
- Fuji Electric Co., Ltd.
- Yoshihisa Suzuki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Conductive line construction, memory circuitry, and method of formi...
- Patent number 11,075,274
- Issue date Jul 27, 2021
- Micron Technology, Inc.
- Kenichi Kusumoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Robust gate cap for protecting a gate from downstream metallization...
- Patent number 10,916,431
- Issue date Feb 9, 2021
- International Business Machines Corporation
- Raghuveer Reddy Patlolla
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing semiconductor device
- Patent number 10,879,367
- Issue date Dec 29, 2020
- Mitsubishi Electric Corporation
- Chikayuki Okamoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices and methods of fabricating the same
- Patent number 10,872,888
- Issue date Dec 22, 2020
- Samsung Electronics Co., Ltd.
- Moon-Kyu Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Substrate resistor and method of making same
- Patent number 10,872,963
- Issue date Dec 22, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Hua Feng Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of cutting metal gates and structures formed thereof
- Patent number 10,861,752
- Issue date Dec 8, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd
- Tsu-Hsiu Perng
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Combined gate trench and contact etch process and related structure
- Patent number 10,840,327
- Issue date Nov 17, 2020
- Infineon Technologies Americas Corp.
- Ling Ma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure and method for forming the same
- Patent number 10,811,420
- Issue date Oct 20, 2020
- NANYA TECHNOLOGY CORPORATION
- Szu-Han Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for fabricating the same
- Patent number 10,804,365
- Issue date Oct 13, 2020
- United Microelectronics Corp.
- Chun-Chieh Chiu
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
TRANSISTORS WITH IMPROVED THERMAL STABILITY
- Publication number 20250022934
- Publication date Jan 16, 2025
- Taiwan Semiconductor Manufacturing company Ltd.
- Kuo-Chang Chiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE AND SI...
- Publication number 20250006795
- Publication date Jan 2, 2025
- Fuji Electric Co., Ltd.
- Naruhisa NAGATA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH CAPPING LAYER AND METHOD FOR FABRICATING...
- Publication number 20240304697
- Publication date Sep 12, 2024
- NANYA TECHNOLOGY CORPORATION
- TSE-YAO HUANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH CAPPING LAYER
- Publication number 20240304696
- Publication date Sep 12, 2024
- NANYA TECHNOLOGY CORPORATION
- TSE-YAO HUANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR
- Publication number 20240222465
- Publication date Jul 4, 2024
- Magnachip Semiconductor, Ltd.
- Jungyeon LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20240145589
- Publication date May 2, 2024
- Fuji Electric Co., Ltd.
- Keiji OKUMURA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20230282735
- Publication date Sep 7, 2023
- RENESAS ELECTRONICS CORPORATION
- Shotaro KUDO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FABRICATING A FIELD-EFFECT TRANSISTOR WITH SIZE-REDUCED...
- Publication number 20230100196
- Publication date Mar 30, 2023
- POSTECH Research and Business Development Foundation
- Rock Hyun BAEK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20230088980
- Publication date Mar 23, 2023
- KIOXIA Corporation
- Shoji AOTA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20230049039
- Publication date Feb 16, 2023
- Fuji Electric Co., Ltd.
- Keiji OKUMURA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SHIELDED GATE TRENCH SEMICONDUCTOR APPARATUS AND MANUFACTURING METH...
- Publication number 20220223708
- Publication date Jul 14, 2022
- Nanjing Zizhu Microelectronics Co., Ltd.
- Yi SU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FABRICATING A SEMICONDUCTOR DEVICE
- Publication number 20220139910
- Publication date May 5, 2022
- Samsung Electronics Co., Ltd.
- Geunwoo KIM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES
- Publication number 20220077152
- Publication date Mar 10, 2022
- Samsung Electronics Co., Ltd.
- Dongkyun Lim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE HAVING BURIED GATE STRUCTURE AND METHOD FOR FA...
- Publication number 20220059670
- Publication date Feb 24, 2022
- SK hynix Inc.
- Dong-Soo KIM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
- Publication number 20220013363
- Publication date Jan 13, 2022
- SK hynix Inc.
- Young-Gwang YOON
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH SILICIDE GATE FILL STRUCTURE
- Publication number 20210408235
- Publication date Dec 30, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chung-Liang Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20210408278
- Publication date Dec 30, 2021
- Fuji Electric Co., Ltd.
- Keiji OKUMURA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
- Publication number 20210358815
- Publication date Nov 18, 2021
- SK HYNIX INC.
- Keon YOO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR APPARATUS
- Publication number 20210296462
- Publication date Sep 23, 2021
- Mitsubishi Electric Corporation
- Daisuke HIRATA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods of Cutting Metal Gates and Structures Formed Thereof
- Publication number 20210280473
- Publication date Sep 9, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Tsu-Hsiu Perng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20210134793
- Publication date May 6, 2021
- Samsung Electronics Co., Ltd.
- Geunwoo KIM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods of Cutting Metal Gates and Structures Formed Thereof
- Publication number 20210118748
- Publication date Apr 22, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Tsu-Hsiu Perng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES AND METHODS OF FABRICATING THE SAME
- Publication number 20210020631
- Publication date Jan 21, 2021
- Samsung Electronics Co., Ltd.
- Moon-Kyu PARK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Field-effect transistor with size-reduced source/drain epitaxy and...
- Publication number 20200403064
- Publication date Dec 24, 2020
- POSTECH Research and Business Development Foundation
- Rock Hyun BAEK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
- Publication number 20200403077
- Publication date Dec 24, 2020
- UNITED MICROELECTRONICS CORP.
- Chun-Chieh Chiu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE HAVING BURIED GATE STRUCTURE AND METHOD FOR FA...
- Publication number 20200395461
- Publication date Dec 17, 2020
- SK HYNIX INC.
- Dong-Soo KIM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ROBUST GATE CAP FOR PROTECTING A GATE FROM DOWNSTREAM METALLIZATION...
- Publication number 20200335345
- Publication date Oct 22, 2020
- International Business Machines Corporation
- Raghuveer Reddy Patlolla
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MOSFET STRUCTURE, AND MANUFACTURING METHOD THEREOF
- Publication number 20200295184
- Publication date Sep 17, 2020
- CSMC TECHNOLOGIES FAB2 CO., LTD.
- Tse-Huang LO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD
- Publication number 20200294861
- Publication date Sep 17, 2020
- Toshiba Memory Corporation
- Junya FUJITA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
- Publication number 20200286734
- Publication date Sep 10, 2020
- SK HYNIX INC.
- Young-Gwang YOON
- H01 - BASIC ELECTRIC ELEMENTS

with a barrier layer between the silicon and the metal or metal silicide upper layer

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Semiconductor structure and a manufacturing method thereof

Semiconductor device having buried gate structure and method for fa...

Methods of cutting metal gates and structures formed thereof

Semiconductor device

Method for fabricating a field-effect transistor with size-reduced...

Method of fabricating a semiconductor device

Semiconductor device and method for fabricating the same

Semiconductor device and method for fabricating the same

Semiconductor devices having a decreasing height gate structure

Shielded gate trench semiconductor apparatus and manufacturing meth...

Methods of cutting metal gates and structures formed thereof

Semiconductor devices and methods of fabricating the same

Semiconductor device

Semiconductor device and method for fabricating the same

Semiconductor device with diffusion barrier in the active contact

Gate structure with barrier layer and method for forming the same

Semiconductor device having buried gate structure and method for fa...

MOSFET structure, and manufacturing method thereof

Methods of cutting metal gates and structures formed thereof

Semiconductor device and method for fabricating the same

Semiconductor device

Conductive line construction, memory circuitry, and method of formi...

Robust gate cap for protecting a gate from downstream metallization...

Method for manufacturing semiconductor device

Semiconductor devices and methods of fabricating the same

Substrate resistor and method of making same

Methods of cutting metal gates and structures formed thereof

Combined gate trench and contact etch process and related structure

Semiconductor structure and method for forming the same

Semiconductor device and method for fabricating the same

Patents Applicationslast 30 patents

TRANSISTORS WITH IMPROVED THERMAL STABILITY

METHOD OF MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE AND SI...

SEMICONDUCTOR DEVICE WITH CAPPING LAYER AND METHOD FOR FABRICATING...

SEMICONDUCTOR DEVICE WITH CAPPING LAYER

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR

SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

METHOD FOR FABRICATING A FIELD-EFFECT TRANSISTOR WITH SIZE-REDUCED...

SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE

SHIELDED GATE TRENCH SEMICONDUCTOR APPARATUS AND MANUFACTURING METH...

METHOD OF FABRICATING A SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICES

SEMICONDUCTOR DEVICE HAVING BURIED GATE STRUCTURE AND METHOD FOR FA...

SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

SEMICONDUCTOR DEVICE WITH SILICIDE GATE FILL STRUCTURE

SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

SEMICONDUCTOR APPARATUS

Methods of Cutting Metal Gates and Structures Formed Thereof

SEMICONDUCTOR DEVICE

Methods of Cutting Metal Gates and Structures Formed Thereof

SEMICONDUCTOR DEVICES AND METHODS OF FABRICATING THE SAME

Field-effect transistor with size-reduced source/drain epitaxy and...

SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

SEMICONDUCTOR DEVICE HAVING BURIED GATE STRUCTURE AND METHOD FOR FA...

ROBUST GATE CAP FOR PROTECTING A GATE FROM DOWNSTREAM METALLIZATION...

MOSFET STRUCTURE, AND MANUFACTURING METHOD THEREOF

SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD

SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME