with a floating gate

Industry

CPC
H01L29/66825

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Parent Industries

HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

Current Industry

H01L29/66825with a floating gate

Industries

Patents Grantslast 30 patents

Information Patent Grant
Memory device
- Patent number 12,148,808
- Issue date Nov 19, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Yu-Chu Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacturing the same
- Patent number 12,144,169
- Issue date Nov 12, 2024
- Samsung Electronics Co., Ltd.
- Jong Sung Woo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Seal method to integrate non-volatile memory (NVM) into logic or bi...
- Patent number 12,144,173
- Issue date Nov 12, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Cheng-Bo Shu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a semiconductor device with memory cells, high vo...
- Patent number 12,144,172
- Issue date Nov 12, 2024
- Silicon Storage Technology, Inc.
- Zhuoqiang Jia
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
3D semiconductor device and structure with single-crystal layers
- Patent number 12,136,562
- Issue date Nov 5, 2024
- Monolithic 3D Inc.
- Zvi Or-Bach
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory cell and method used in forming a memory cells
- Patent number 12,133,383
- Issue date Oct 29, 2024
- Micron Technology, Inc.
- Venkatakrishnan Sriraman
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Non-volatile memory device and method for manufacturing the same
- Patent number 12,127,403
- Issue date Oct 22, 2024
- Winbond Electronics Corp.
- Chun-Hao Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
3D semiconductor device and structure with metal layers and memory...
- Patent number 12,125,737
- Issue date Oct 22, 2024
- Monolithic 3D Inc.
- Zvi Or-Bach
- G11 - INFORMATION STORAGE
Information Patent Grant
Triple-gate MOS transistor and method for manufacturing such a tran...
- Patent number 12,125,913
- Issue date Oct 22, 2024
- STMicroelectronicsa (Rousset) SAS
- Abderrezak Marzaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Array boundary structure to reduce dishing
- Patent number 12,127,399
- Issue date Oct 22, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Meng-Han Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical three-dimensional stack NOR flash memory
- Patent number 12,114,495
- Issue date Oct 8, 2024
- International Business Machines Corporation
- Effendi Leobandung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Strap-cell architecture for embedded memory
- Patent number 12,101,931
- Issue date Sep 24, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Wen-Tuo Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for producing a 3D semiconductor device and structure with...
- Patent number 12,100,611
- Issue date Sep 24, 2024
- Monolithic 3D Inc.
- Zvi Or-Bach
- G11 - INFORMATION STORAGE
Information Patent Grant
Floating gate test structure for embedded memory device
- Patent number 12,096,629
- Issue date Sep 17, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Hung-Ling Shih
- G11 - INFORMATION STORAGE
Information Patent Grant
Multi-type high voltage devices fabrication for embedded memory
- Patent number 12,096,621
- Issue date Sep 17, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Wei Cheng Wu
- G11 - INFORMATION STORAGE
Information Patent Grant
3D semiconductor device and structure with metal layers and a conne...
- Patent number 12,080,630
- Issue date Sep 3, 2024
- Monolithic 3D Inc.
- Zvi Or-Bach
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Programmable memory and forming method thereof
- Patent number 12,082,405
- Issue date Sep 3, 2024
- United Microelectronics Corp.
- Hsueh-Chun Hsiao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory cell, memory device manufacturing method and memory device o...
- Patent number 12,069,857
- Issue date Aug 20, 2024
- Macronix International Co., Ltd.
- Yu-Hsuan Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor arrangement and formation thereof
- Patent number 12,068,313
- Issue date Aug 20, 2024
- Taiwan Semiconductor Manufacturing Company Limited
- Harry-Hak-Lay Chuang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit device
- Patent number 12,068,418
- Issue date Aug 20, 2024
- Samsung Electronics Co., Ltd.
- Kyongsik Yeom
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
3D semiconductor device and structure with bonding and DRAM memory...
- Patent number 12,068,187
- Issue date Aug 20, 2024
- Monolithic 3D Inc.
- Zvi Or-Bach
- G11 - INFORMATION STORAGE
Information Patent Grant
Flash memory layout to eliminate floating gate bridge
- Patent number 12,063,776
- Issue date Aug 13, 2024
- Taiwan Semiconductor Manufacturing Company., Ltd.
- Shun-Neng Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate spacer structure and method of forming same
- Patent number 12,062,709
- Issue date Aug 13, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Wei-Ting Chien
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming semiconductor memory device having a t-shaped er...
- Patent number 12,057,481
- Issue date Aug 6, 2024
- United Microelectronics Corp.
- Liang Yi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor and method for manufacturing the same
- Patent number 12,051,755
- Issue date Jul 30, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yu-Chu Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Compact EEPROM memory cell with a gate dielectric layer having two...
- Patent number 12,052,861
- Issue date Jul 30, 2024
- STMicroelectronics (Rousset) SAS
- François Tailliet
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming semiconductor structure for memory device
- Patent number 12,046,649
- Issue date Jul 23, 2024
- Taiwan Semiconductor Manufacturing Company Ltd.
- Szu-Yu Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semi-floating gate memory device and method for fabricating the same
- Patent number 12,040,413
- Issue date Jul 16, 2024
- Shanghai Huali Integrated Circuit Corporation
- Heng Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor memory device and fabrication method thereof
- Patent number 12,040,369
- Issue date Jul 16, 2024
- United Microelectronics Corp.
- Liang Yi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Polysilicon removal in word line contact region of memory devices
- Patent number 12,041,771
- Issue date Jul 16, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Yen-Jou Wu
- G11 - INFORMATION STORAGE

Patents Applicationslast 30 patents

Information Patent Application
FLASH MEMORY LAYOUT TO ELIMINATE FLOATING GATE BRIDGE
- Publication number 20240389314
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Shun-Neng Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Memory Device Formed On Silicon-On-Insulator Substrate, And Method...
- Publication number 20240389319
- Publication date Nov 21, 2024
- Silicon Storage Technology, Inc.
- Serguei Jourba
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SUPER FLASH AND METHOD FOR MANUFACTURING SAME
- Publication number 20240379879
- Publication date Nov 14, 2024
- Shanghai Huali Integrated Circuit Corporation
- Caiyun CHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
3D SEMICONDUCTOR DEVICE AND STRUCTURE WITH THREE LEVELS AND ISOLATI...
- Publication number 20240379502
- Publication date Nov 14, 2024
- Monolithic 3D Inc.
- Zvi Or-Bach
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTI-TYPE HIGH VOLTAGE DEVICES FABRICATION FOR EMBEDDED MEMORY
- Publication number 20240373627
- Publication date Nov 7, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Wei Cheng Wu
- G11 - INFORMATION STORAGE
Information Patent Application
ARRAY BOUNDARY STRUCTURE TO REDUCE DISHING
- Publication number 20240373626
- Publication date Nov 7, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Meng-Han Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRAP-CELL ARCHITECTURE FOR EMBEDDED MEMORY
- Publication number 20240373628
- Publication date Nov 7, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Wen-Tuo Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
3D SEMICONDUCTOR DEVICE AND STRUCTURE WITH METAL LAYERS AND MEMORY...
- Publication number 20240363385
- Publication date Oct 31, 2024
- Monolithic 3D Inc.
- Zvi Or-Bach
- G11 - INFORMATION STORAGE
Information Patent Application
INTEGRATED CIRCUIT DEVICE
- Publication number 20240363764
- Publication date Oct 31, 2024
- Samsung Electronics Co., Ltd.
- KYONGSIK YEOM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FLASH MEMORY CELL WITH TUNABLE TUNNEL DIELECTRIC CAPACITANCE
- Publication number 20240363765
- Publication date Oct 31, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Gerben Doornbos
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FLOATING GATE BIOSENSOR
- Publication number 20240361271
- Publication date Oct 31, 2024
- International Business Machines Corporation
- Takashi Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY CELL, MEMORY DEVICE MANUFACTURING METHOD AND MEMORY DEVICE O...
- Publication number 20240365541
- Publication date Oct 31, 2024
- Macronix International Co., Ltd.
- Yu-Hsuan LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20240355936
- Publication date Oct 24, 2024
- United Microelectronics Corp.
- Boon Keat Toh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FLASH MEMORY CELL, WRITING METHOD AND ERASING METHOD THEREFOR
- Publication number 20240355396
- Publication date Oct 24, 2024
- Beijing PXMicro Technology Co. Ltd.
- Jiayong Jiang
- G11 - INFORMATION STORAGE
Information Patent Application
TRANSISTOR AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20240347645
- Publication date Oct 17, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yu-Chu LIN
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR STRUCTURE
- Publication number 20240347612
- Publication date Oct 17, 2024
- Taiwan Semiconductor Manufacturing company Ltd.
- SZU-YU WANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF FORMATION
- Publication number 20240339546
- Publication date Oct 10, 2024
- Taiwan Semiconductor Manufacturing Company Limited
- Chin-Yi HUANG
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR MEMORY DEVICE AND FABRICATION METHOD THEREOF
- Publication number 20240332384
- Publication date Oct 3, 2024
- UNITED MICROELECTRONICS CORP.
- Liang Yi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR MEMORY DEVICE
- Publication number 20240334693
- Publication date Oct 3, 2024
- UNITED MICROELECTRONICS CORP.
- Yu-Jen Yeh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR MEMORY DEVICE AND FABRICATION METHOD THEREOF
- Publication number 20240332383
- Publication date Oct 3, 2024
- UNITED MICROELECTRONICS CORP.
- Liang Yi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH AIR-VOID IN SPACER
- Publication number 20240321954
- Publication date Sep 26, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Gulbagh Singh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BIT-ERASABLE EMBEDDED SELECT IN TRENCH MEMORY (ESTM)
- Publication number 20240324196
- Publication date Sep 26, 2024
- STMicroelectronics (Rousset) SAS
- Franck Melul
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POWER METAL-OXIDE-SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD...
- Publication number 20240321973
- Publication date Sep 26, 2024
- UNITED MICROELECTRONICS CORP.
- Cheng-Hua Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RESISTOR BETWEEN DUMMY FLASH STRUCTURES
- Publication number 20240315017
- Publication date Sep 19, 2024
- UNITED MICROELECTRONICS CORP.
- WEICHANG LIU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING TOP SELECT GATE TRENCHES
- Publication number 20240304693
- Publication date Sep 12, 2024
- Yangtze Memory Technologies Co., Ltd.
- Hang YIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE
- Publication number 20240297226
- Publication date Sep 5, 2024
- WINBOND ELECTRONICS CORP.
- Che-Jui HSU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20240298440
- Publication date Sep 5, 2024
- WINBOND ELECTRONICS CORP.
- Wen-Chieh TSAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRI-GATE ORTHOGONAL CHANNEL TRANSISTOR AND METHODS OF FORMING THE SAME
- Publication number 20240290856
- Publication date Aug 29, 2024
- Taiwan Semiconductor Manufacturing Company Limited
- Katherine H. CHIANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR MEMORY DEVICE HAVING COMPOSITE DIELECTRIC FILM STRUCT...
- Publication number 20240290672
- Publication date Aug 29, 2024
- Taiwan Semiconductor Manufacturing Company Limited
- Sheng-Chieh CHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR WITH EXTENDED LIFE TIME FLASH MEMORY
- Publication number 20240284667
- Publication date Aug 22, 2024
- HON HAI PRECISION INDUSTRY CO., LTD.
- CHUNG-YI CHEN
- H01 - BASIC ELECTRIC ELEMENTS

with a floating gate

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Memory device

Semiconductor device and method of manufacturing the same

Seal method to integrate non-volatile memory (NVM) into logic or bi...

Method of forming a semiconductor device with memory cells, high vo...

3D semiconductor device and structure with single-crystal layers

Memory cell and method used in forming a memory cells

Non-volatile memory device and method for manufacturing the same

3D semiconductor device and structure with metal layers and memory...

Triple-gate MOS transistor and method for manufacturing such a tran...

Array boundary structure to reduce dishing

Vertical three-dimensional stack NOR flash memory

Strap-cell architecture for embedded memory

Methods for producing a 3D semiconductor device and structure with...

Floating gate test structure for embedded memory device

Multi-type high voltage devices fabrication for embedded memory

3D semiconductor device and structure with metal layers and a conne...

Programmable memory and forming method thereof

Memory cell, memory device manufacturing method and memory device o...

Semiconductor arrangement and formation thereof

Integrated circuit device

3D semiconductor device and structure with bonding and DRAM memory...

Flash memory layout to eliminate floating gate bridge

Gate spacer structure and method of forming same

Method for forming semiconductor memory device having a t-shaped er...

Transistor and method for manufacturing the same

Compact EEPROM memory cell with a gate dielectric layer having two...

Method for forming semiconductor structure for memory device

Semi-floating gate memory device and method for fabricating the same

Semiconductor memory device and fabrication method thereof

Polysilicon removal in word line contact region of memory devices

Patents Applicationslast 30 patents

FLASH MEMORY LAYOUT TO ELIMINATE FLOATING GATE BRIDGE

Memory Device Formed On Silicon-On-Insulator Substrate, And Method...

SUPER FLASH AND METHOD FOR MANUFACTURING SAME

3D SEMICONDUCTOR DEVICE AND STRUCTURE WITH THREE LEVELS AND ISOLATI...

MULTI-TYPE HIGH VOLTAGE DEVICES FABRICATION FOR EMBEDDED MEMORY

ARRAY BOUNDARY STRUCTURE TO REDUCE DISHING

STRAP-CELL ARCHITECTURE FOR EMBEDDED MEMORY

3D SEMICONDUCTOR DEVICE AND STRUCTURE WITH METAL LAYERS AND MEMORY...

INTEGRATED CIRCUIT DEVICE

FLASH MEMORY CELL WITH TUNABLE TUNNEL DIELECTRIC CAPACITANCE

FLOATING GATE BIOSENSOR

MEMORY CELL, MEMORY DEVICE MANUFACTURING METHOD AND MEMORY DEVICE O...

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

FLASH MEMORY CELL, WRITING METHOD AND ERASING METHOD THEREFOR

TRANSISTOR AND METHOD FOR MANUFACTURING THE SAME

SEMICONDUCTOR STRUCTURE

SEMICONDUCTOR DEVICE AND METHOD OF FORMATION

SEMICONDUCTOR MEMORY DEVICE AND FABRICATION METHOD THEREOF

SEMICONDUCTOR MEMORY DEVICE

SEMICONDUCTOR MEMORY DEVICE AND FABRICATION METHOD THEREOF

SEMICONDUCTOR DEVICE WITH AIR-VOID IN SPACER

BIT-ERASABLE EMBEDDED SELECT IN TRENCH MEMORY (ESTM)

POWER METAL-OXIDE-SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD...

RESISTOR BETWEEN DUMMY FLASH STRUCTURES

METHOD OF FORMING TOP SELECT GATE TRENCHES

SEMICONDUCTOR STRUCTURE

MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME

TRI-GATE ORTHOGONAL CHANNEL TRANSISTOR AND METHODS OF FORMING THE SAME

SEMICONDUCTOR MEMORY DEVICE HAVING COMPOSITE DIELECTRIC FILM STRUCT...

SEMICONDUCTOR WITH EXTENDED LIFE TIME FLASH MEMORY