with a horizontal current flow in a vertical sidewall of a semiconductor body

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CPC
H01L29/66795

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Parent Industries

HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

Current Industry

H01L29/66795with a horizontal current flow in a vertical sidewall of a semiconductor body

Industries

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Patents Grantslast 30 patents

Information Patent Grant
Fin field effect transistor devices including NMOS device and PMOS...
- Patent number 12,170,332
- Issue date Dec 17, 2024
- Taiwan Semiconductor Manufacturing Company Ltd.
- Yuan-Sheng Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure and manufacturing method of the same
- Patent number 12,170,327
- Issue date Dec 17, 2024
- Taiwan Semiconductor Manufacturing Company Ltd.
- Ming-Te Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacture
- Patent number 12,170,320
- Issue date Dec 17, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Ming-Chia Tai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dual contact process with stacked metal layers
- Patent number 12,170,319
- Issue date Dec 17, 2024
- Intel Corporation
- Kevin Cook
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin field effect transistor having conformal and non-conformal gate...
- Patent number 12,170,321
- Issue date Dec 17, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Kuei-Lun Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method
- Patent number 12,165,929
- Issue date Dec 10, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chun-Han Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field-effect transistor (FET) with self-aligned ferroelectric capac...
- Patent number 12,166,122
- Issue date Dec 10, 2024
- Intel Corporation
- Shriram Shivaraman
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure and method for forming the same
- Patent number 12,166,125
- Issue date Dec 10, 2024
- Semiconductor Manufacturing International (Shanghai) Corporation
- Fei Zhou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-layer film device and method
- Patent number 12,166,128
- Issue date Dec 10, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yao-Jen Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method
- Patent number 12,166,095
- Issue date Dec 10, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Hsin-Yi Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dielectric fins with air gap and backside self-aligned contact
- Patent number 12,166,071
- Issue date Dec 10, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Ko-Cheng Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing semiconductor device and associated memory...
- Patent number 12,166,089
- Issue date Dec 10, 2024
- Taiwan Semiconductor Manufacturing Company Ltd.
- Nuo Xu
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor device structure with uneven gate profile
- Patent number 12,166,096
- Issue date Dec 10, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chi-Sheng Lai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device structure with metal gate stacks
- Patent number 12,166,105
- Issue date Dec 10, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yi-Hsuan Hsiao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming interconnect structure having a barrier layer
- Patent number 12,165,975
- Issue date Dec 10, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Shu-Cheng Chin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistors comprising a vertical stack of elongated semiconductor...
- Patent number 12,165,869
- Issue date Dec 10, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Tung Ying Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin field effect transistor having airgap and method for manufactur...
- Patent number 12,165,925
- Issue date Dec 10, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Sai-Hooi Yeong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of forming same
- Patent number 12,166,127
- Issue date Dec 10, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Yi Chen Ho
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit device with power control circuit having various...
- Patent number 12,166,029
- Issue date Dec 10, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yi-Jui Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Contact structure for semiconductor device and method
- Patent number 12,166,078
- Issue date Dec 10, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yan-Ming Tsai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate structure and semiconductor device having the same
- Patent number 12,166,126
- Issue date Dec 10, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chun-Chieh Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating metal gate devices and resulting structures
- Patent number 12,159,916
- Issue date Dec 3, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Po-Chi Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Backside interconnect structures for semiconductor devices and meth...
- Patent number 12,159,869
- Issue date Dec 3, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Cheng-Ting Chung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Contact structures for gate-all-around devices and methods of formi...
- Patent number 12,159,913
- Issue date Dec 3, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Jhon Jhy Liaw
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing semiconductor devices and semiconductor device
- Patent number 12,159,807
- Issue date Dec 3, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Kun-Yu Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor structure and processing method therefore
- Patent number 12,159,936
- Issue date Dec 3, 2024
- Invention And Collaboration Laboratory Pte. Ltd.
- Chao-Chun Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Non-planar gate all-around device and method of fabrication thereof
- Patent number RE50222
- Issue date Nov 26, 2024
- Sony Group Corporation
- Willy Rachmady
Information Patent Grant
Semiconductor device structure with metal gate stack
- Patent number 12,154,969
- Issue date Nov 26, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Jung-Hao Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin-based field effect transistors
- Patent number 12,154,903
- Issue date Nov 26, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Matthias Passlack
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for semiconductor device structure
- Patent number 12,154,970
- Issue date Nov 26, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Tze-Chung Lin
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
- Publication number 20240421213
- Publication date Dec 19, 2024
- UNITED MICROELECTRONICS CORP.
- Fu-Jung Chuang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATED BODY TRANSISTORS
- Publication number 20240421233
- Publication date Dec 19, 2024
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- Ming Tsang TSAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIN-BASED FIELD EFFECT TRANSISTOR (FET) SOURCE/DRAIN STRAIN TO ENHA...
- Publication number 20240421214
- Publication date Dec 19, 2024
- QUALCOMM Incorporated
- Xia LI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NOISE TRANSISTOR
- Publication number 20240421228
- Publication date Dec 19, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Che-Chun Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LDMOS NANOSHEET TRANSISTOR
- Publication number 20240413239
- Publication date Dec 12, 2024
- TEXAS INSTRUMENTS INCORPORATED
- Henry Litzmann Edwards
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD
- Publication number 20240413157
- Publication date Dec 12, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Li-Fong Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TECHNIQUES AND CONFIGURATIONS TO REDUCE TRANSISTOR GATE SHORT DEFECTS
- Publication number 20240413016
- Publication date Dec 12, 2024
- Intel Corporation
- Sridhar GOVINDARAJU
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
CFETS AND THE METHODS OF FORMING THE SAME
- Publication number 20240413019
- Publication date Dec 12, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Ting-Yun Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DIELECTRIC FEATURES FOR PARASITIC CAPACITANCE REDUCTION
- Publication number 20240413244
- Publication date Dec 12, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Wei-Hao Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING EPITAXIAL SEMICONDUCTOR LAYER AND METHOD OF MANUF...
- Publication number 20240412974
- Publication date Dec 12, 2024
- RNR LAB INC.
- Jeong Do RYU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Contact Plugs With Reduced R/C and the Methods of Forming The Same
- Publication number 20240413020
- Publication date Dec 12, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Min-Hsiu Hung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Interconnect Structure and Method of Forming Thereof
- Publication number 20240413087
- Publication date Dec 12, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Shu-Cheng Chin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT WITH PATTERN OVERLAY FOR ASSISTING OVERLAY SIGNA...
- Publication number 20240405100
- Publication date Dec 5, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Pei-Sheng TANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20240405126
- Publication date Dec 5, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Bo-Huan HSIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EMBEDDED STRESSORS IN EPITAXY SOURCE/DRAIN REGIONS
- Publication number 20240404885
- Publication date Dec 5, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Shahaji B. More
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURE
- Publication number 20240404876
- Publication date Dec 5, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Kan-Ju Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONFINED EPITAXIAL REGIONS FOR SEMICONDUCTOR DEVICES AND METHODS OF...
- Publication number 20240405101
- Publication date Dec 5, 2024
- Intel Corporation
- Szuya S. LIAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF, MEMORY SYSTEM
- Publication number 20240407168
- Publication date Dec 5, 2024
- Yangtze Memory Technologies Co., Ltd.
- Quan Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20240405087
- Publication date Dec 5, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ya-Chin KING
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIN JOG STRUCTURE AND METHODS OF MAKING SAME
- Publication number 20240405097
- Publication date Dec 5, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Wei-Hao Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
OPTIMIZED FIN HEIGHT FOR FINFET TRANSISTOR AND METHOD OF FABRICATIN...
- Publication number 20240405099
- Publication date Dec 5, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Wei-Hao WU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HYBRID ORIENTATION CHANNELS AND MIXED ORIENTATION BOTTOM EPITAXY
- Publication number 20240395816
- Publication date Nov 28, 2024
- International Business Machines Corporation
- Brent A. Anderson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20240395864
- Publication date Nov 28, 2024
- Parabellum Strategic Opportunities Fund LLC
- Ka-Hing FUNG
- B82 - NANO-TECHNOLOGY
Information Patent Application
METHODS OF FORMING EPITAXIAL SOURCE/DRAIN FEATURES IN SEMICONDUCTOR...
- Publication number 20240395866
- Publication date Nov 28, 2024
- Taiwan Semiconductor Manufacturing Co., LTD
- Tzu-Hsiang Hsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURE
- Publication number 20240395874
- Publication date Nov 28, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chun-Hsien Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR PASSIVE DEVICE INTEGRATION FOR SILICON-ON-INSULATOR S...
- Publication number 20240395664
- Publication date Nov 28, 2024
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD
- Publication number 20240395905
- Publication date Nov 28, 2024
- Taiwan Semiconductor Manufacturing Co, LTD.
- Shahaji B. More
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE AND A SEMICONDUCTOR...
- Publication number 20240395908
- Publication date Nov 28, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Shahaji B. MORE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BACKSIDE CONTACT
- Publication number 20240395938
- Publication date Nov 28, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Li-Zhen Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE HAVING EPITAXIAL STRUCTURE
- Publication number 20240395604
- Publication date Nov 28, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Sai-Hooi YEONG
- H01 - BASIC ELECTRIC ELEMENTS

with a horizontal current flow in a vertical sidewall of a semiconductor body

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Fin field effect transistor devices including NMOS device and PMOS...

Semiconductor structure and manufacturing method of the same

Semiconductor device and method of manufacture

Dual contact process with stacked metal layers

Fin field effect transistor having conformal and non-conformal gate...

Semiconductor device and method

Field-effect transistor (FET) with self-aligned ferroelectric capac...

Semiconductor structure and method for forming the same

Multi-layer film device and method

Semiconductor device and method

Dielectric fins with air gap and backside self-aligned contact

Method of manufacturing semiconductor device and associated memory...

Semiconductor device structure with uneven gate profile

Semiconductor device structure with metal gate stacks

Method of forming interconnect structure having a barrier layer

Transistors comprising a vertical stack of elongated semiconductor...

Fin field effect transistor having airgap and method for manufactur...

Semiconductor device and method of forming same

Integrated circuit device with power control circuit having various...

Contact structure for semiconductor device and method

Gate structure and semiconductor device having the same

Method for fabricating metal gate devices and resulting structures

Backside interconnect structures for semiconductor devices and meth...

Contact structures for gate-all-around devices and methods of formi...

Method of manufacturing semiconductor devices and semiconductor device

Transistor structure and processing method therefore

Non-planar gate all-around device and method of fabrication thereof

Semiconductor device structure with metal gate stack

Fin-based field effect transistors

Method for semiconductor device structure

Patents Applicationslast 30 patents

SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

GATED BODY TRANSISTORS

FIN-BASED FIELD EFFECT TRANSISTOR (FET) SOURCE/DRAIN STRAIN TO ENHA...

NOISE TRANSISTOR

LDMOS NANOSHEET TRANSISTOR

SEMICONDUCTOR DEVICE AND METHOD

TECHNIQUES AND CONFIGURATIONS TO REDUCE TRANSISTOR GATE SHORT DEFECTS

CFETS AND THE METHODS OF FORMING THE SAME

DIELECTRIC FEATURES FOR PARASITIC CAPACITANCE REDUCTION

METHOD OF FORMING EPITAXIAL SEMICONDUCTOR LAYER AND METHOD OF MANUF...

Contact Plugs With Reduced R/C and the Methods of Forming The Same

Interconnect Structure and Method of Forming Thereof

INTEGRATED CIRCUIT WITH PATTERN OVERLAY FOR ASSISTING OVERLAY SIGNA...

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

EMBEDDED STRESSORS IN EPITAXY SOURCE/DRAIN REGIONS

SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURE

CONFINED EPITAXIAL REGIONS FOR SEMICONDUCTOR DEVICES AND METHODS OF...

SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF, MEMORY SYSTEM

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

FIN JOG STRUCTURE AND METHODS OF MAKING SAME

OPTIMIZED FIN HEIGHT FOR FINFET TRANSISTOR AND METHOD OF FABRICATIN...

HYBRID ORIENTATION CHANNELS AND MIXED ORIENTATION BOTTOM EPITAXY

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

METHODS OF FORMING EPITAXIAL SOURCE/DRAIN FEATURES IN SEMICONDUCTOR...

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURE

SEMICONDUCTOR PASSIVE DEVICE INTEGRATION FOR SILICON-ON-INSULATOR S...

SEMICONDUCTOR DEVICE AND METHOD

METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE AND A SEMICONDUCTOR...

BACKSIDE CONTACT

SEMICONDUCTOR STRUCTURE HAVING EPITAXIAL STRUCTURE