with a multilayer structure or superlattice structure

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CPC
H01L29/78687

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Parent Industries

HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

Current Industry

H01L29/78687with a multilayer structure or superlattice structure

Industries

Patents Grantslast 30 patents

Information Patent Grant
Method of manufacturing a semiconductor device and a semiconductor...
- Patent number 11,776,852
- Issue date Oct 3, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Shao-Ming Yu
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Capping layer over FET FeRAM to increase charge mobility
- Patent number 11,729,990
- Issue date Aug 15, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Rainer Yen-Chieh Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for making an inverted T channel field effect transistor (IT...
- Patent number 11,664,459
- Issue date May 30, 2023
- ATOMERA INCORPORATED
- Robert John Stephenson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a semiconductor device and a semiconductor...
- Patent number 11,444,199
- Issue date Sep 13, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd
- Shahaji B. More
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for making semiconductor device including a superlattice wit...
- Patent number 11,302,823
- Issue date Apr 12, 2022
- ATOMERA INCORPORATED
- Keith Doran Weeks
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a semiconductor device and a semiconductor...
- Patent number 11,037,828
- Issue date Jun 15, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd
- Shao-Ming Yu
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Nonvolatile memory device including two-dimensional material and ap...
- Patent number 11,024,748
- Issue date Jun 1, 2021
- Samsung Electronics Co., Ltd.
- Jaeho Lee
- B82 - NANO-TECHNOLOGY
Information Patent Grant
TFT structure based on flexible multi-layer graphene quantum carbon...
- Patent number 11,011,646
- Issue date May 18, 2021
- Guang Dong Dongbond Technology Co., Ltd.
- Ping Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Varactor with hyper-abrupt junction region including a superlattice
- Patent number 10,840,388
- Issue date Nov 17, 2020
- ATOMERA INCORPORATED
- Richard Burton
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Graphene FET devices, systems, and methods of using the same for se...
- Patent number 10,811,539
- Issue date Oct 20, 2020
- NANOMEDICAL DIAGNOSTICS, INC.
- Pieter van Rooyen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field-effect transistor, display element, image display device, and...
- Patent number 10,790,308
- Issue date Sep 29, 2020
- Ricoh Company, Ltd.
- Naoyuki Ueda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Quantum dot devices with modulation doped stacks
- Patent number 10,763,349
- Issue date Sep 1, 2020
- Intel Corporation
- Ravi Pillarisetty
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Inverted T channel field effect transistor (ITFET) including a supe...
- Patent number 10,763,370
- Issue date Sep 1, 2020
- ATOMERA INCORPORATED
- Robert John Stephenson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Strain compensation in transistors
- Patent number 10,748,993
- Issue date Aug 18, 2020
- Intel Corporation
- Van H. Le
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Width adjustment of stacked nanowires
- Patent number 10,749,038
- Issue date Aug 18, 2020
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field-effect transistors with a grown silicon-germanium channel
- Patent number 10,680,065
- Issue date Jun 9, 2020
- GlobalFoundries Inc.
- George R. Mulfinger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Layered structure and semiconductor device including layered structure
- Patent number 10,644,115
- Issue date May 5, 2020
- FLOSFIA INC.
- Takayoshi Oshima
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Thin film transistor substrate, and display panel and display devic...
- Patent number 10,541,254
- Issue date Jan 21, 2020
- LG Innotek Co., Ltd
- Sang Youl Lee
- G02 - OPTICS
Information Patent Grant
Methods of forming strained-semiconductor-on-insulator device struc...
- Patent number 10,510,581
- Issue date Dec 17, 2019
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Thomas A. Langdo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with transition metal dichalocogenide hetero-s...
- Patent number 10,505,052
- Issue date Dec 10, 2019
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Shih-Yen Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 10,424,638
- Issue date Sep 24, 2019
- Tsinghua University
- Jin Zhang
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Strain compensation in transistors
- Patent number 10,388,733
- Issue date Aug 20, 2019
- Intel Corporation
- Van H. Le
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electronic device including 2-dimensional material
- Patent number 10,269,975
- Issue date Apr 23, 2019
- Samsung Electronics Co., Ltd.
- Seongjun Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Strain compensation in transistors
- Patent number 10,224,399
- Issue date Mar 5, 2019
- Intel Corporation
- Van H. Le
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with transition metal dichalocogenide hetero-s...
- Patent number 10,164,122
- Issue date Dec 25, 2018
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Shih-Yen Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electronic device including side gate and two-dimensional material...
- Patent number 10,121,854
- Issue date Nov 6, 2018
- Samsung Electronics Co., Ltd.
- Jinseong Heo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device, manufacturing method of the same, or display...
- Patent number 10,002,970
- Issue date Jun 19, 2018
- Semiconductor Energy Laboratory Co., Ltd.
- Junichi Koezuka
- G02 - OPTICS
Information Patent Grant
Semiconductor device having a field effect transistor formed on a s...
- Patent number 9,966,452
- Issue date May 8, 2018
- Renesas Electronics Corporation
- Hidekazu Oda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor having germanium channel on silicon nanowire and fabrica...
- Patent number 9,935,189
- Issue date Apr 3, 2018
- Gachon University of Industry-Academic cooperation Foundation
- Seongjae Cho
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure with changeable gate length and method for...
- Patent number 9,899,490
- Issue date Feb 20, 2018
- Taiwan Semiconductor Manufacturing Co., Ltd
- Jean-Pierre Colinge
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR DEVICE AND A METHOD OF MANUFACTURING THE SAME
- Publication number 20240021704
- Publication date Jan 18, 2024
- Samsung Electronics Co., Ltd.
- Sangmoon LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE AND A SEMICONDUCTOR...
- Publication number 20230411215
- Publication date Dec 21, 2023
- TATWAN SEMICONDUCTOR MANUFACTURING COMANY, LTD.
- Shao-Ming YU
- B82 - NANO-TECHNOLOGY
Information Patent Application
SEAM-TOP SEAL FOR DIELECTRICS
- Publication number 20230395683
- Publication date Dec 7, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Kuei-Lin CHAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTI-LAYERED OR GRADED SEMICONDUCTOR REGION IN THIN FILM TRANSISTO...
- Publication number 20230369508
- Publication date Nov 16, 2023
- Intel Corporation
- Timothy Jen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CAPPING LAYER OVER FET FERAM TO INCREASE CHARGE MOBILITY
- Publication number 20230329000
- Publication date Oct 12, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Rainer Yen-Chieh Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED INPUT OUTPUT AND LOGIC DEVICE FOR NANOSHEET TECHNOLOGY
- Publication number 20230178547
- Publication date Jun 8, 2023
- International Business Machines Corporation
- Maruf Amin BHUIYAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ENRICHED SEMICONDUCTOR NANORIBBONS FOR PRODUCING INTRINSIC COMPRESS...
- Publication number 20230147499
- Publication date May 11, 2023
- Intel Corporation
- Ashish Agrawal
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
- Publication number 20230111579
- Publication date Apr 13, 2023
- Samsung Electronics Co., Ltd.
- RYONG HA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
- Publication number 20230075320
- Publication date Mar 9, 2023
- Samsung Electronics Co., Ltd.
- Noyoung CHUNG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-ALIGNED WIDE BACKSIDE POWER RAIL CONTACTS TO MULTIPLE TRANSIST...
- Publication number 20230064183
- Publication date Mar 2, 2023
- Applied Materials, Inc.
- Suketu Arun Parikh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TEMPLATE FOR NANOSHEET SOURCE DRAIN FORMATION WITH BOTTOM DIELECTRIC
- Publication number 20230040606
- Publication date Feb 9, 2023
- Applied Materials, Inc.
- Benjamin Colombeau
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND FORMING METHOD THEREOF
- Publication number 20230006071
- Publication date Jan 5, 2023
- CHANGXIN MEMORY TECHNOLOGIES, INC
- Juanjuan HUANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE AND A SEMICONDUCTOR...
- Publication number 20220367706
- Publication date Nov 17, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Shahaji B. MORE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GRADIENT-DOPED SACRIFICIAL LAYERS IN INTEGRATED CIRCUIT STRUCTURES
- Publication number 20220165867
- Publication date May 26, 2022
- Intel Corporation
- Willy Rachmady
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FORMING A SEMICONDUCTOR DEVICE
- Publication number 20220093734
- Publication date Mar 24, 2022
- IMEC vzw
- Boon Teik CHAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ARRAY SUBSTRATE, METHOD FOR FORMING ARRAY SUBSTRATE, AND DISPLAY DE...
- Publication number 20210359141
- Publication date Nov 18, 2021
- Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd.
- Xueru MEI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE AND A SEMICONDUCTOR...
- Publication number 20210305100
- Publication date Sep 30, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Shao-Ming YU
- B82 - NANO-TECHNOLOGY
Information Patent Application
METHOD FOR MAKING SEMICONDUCTOR DEVICE INCLUDING A SUPERLATTICE WIT...
- Publication number 20210265509
- Publication date Aug 26, 2021
- ATOMERA INCORPORATED
- KEITH DORAN WEEKS
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE AND A SEMICONDUCTOR...
- Publication number 20200105608
- Publication date Apr 2, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Shao-Ming YU
- B82 - NANO-TECHNOLOGY
Information Patent Application
QUANTUM DOT DEVICES WITH MODULATION DOPED STACKS
- Publication number 20190363181
- Publication date Nov 28, 2019
- Intel Corporation
- Ravi Pillarisetty
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRAIN COMPENSATION IN TRANSISTORS
- Publication number 20190348499
- Publication date Nov 14, 2019
- Intel Corporation
- Van H. Le
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MAKING AN INVERTED T CHANNEL FIELD EFFECT TRANSISTOR (IT...
- Publication number 20190319135
- Publication date Oct 17, 2019
- ATOMERA INCORPORATED
- ROBERT JOHN STEPHENSON
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INVERTED T CHANNEL FIELD EFFECT TRANSISTOR (ITFET) INCLUDING A SUPE...
- Publication number 20190319136
- Publication date Oct 17, 2019
- ATOMERA INCORPORATED
- ROBERT JOHN STEPHENSON
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LAYERED STRUCTURE AND SEMICONDUCTOR DEVICE INCLUDING LAYERED STRUCTURE
- Publication number 20190267450
- Publication date Aug 29, 2019
- FLOSFIA INC.
- Takayoshi OSHIMA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GRAPHENE FET DEVICES, SYSTEMS, AND METHODS OF USING THE SAME FOR SE...
- Publication number 20190181273
- Publication date Jun 13, 2019
- Agilome, Inc.
- Pieter van ROOYEN
- C12 - BIOCHEMISTRY BEER SPIRITS WINE VINEGAR MICROBIOLOGY ENZYMOLOGY MUTATION...
Information Patent Application
TFT STRUCTURE BASED ON FLEXIBLE MULTI-LAYER GRAPHENE QUANTUM CARBON...
- Publication number 20190157463
- Publication date May 23, 2019
- Guang Dong Dongbond Technology Co., Ltd.
- Ping LIU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRAIN COMPENSATION IN TRANSISTORS
- Publication number 20190148491
- Publication date May 16, 2019
- Intel Corporation
- Van H. Le
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device with Transition Metal Dichalocogenide Hetero-S...
- Publication number 20190123211
- Publication date Apr 25, 2019
- Taiwan Semiconductor Manufacturing Co., LTD
- Shih-Yen Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD-EFFECT TRANSISTOR, DISPLAY ELEMENT, IMAGE DISPLAY DEVICE, AND...
- Publication number 20190027508
- Publication date Jan 24, 2019
- Naoyuki UEDA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ELECTRONIC DEVICE INCLUDING SIDE GATE AND TWO-DIMENSIONAL MATERIAL...
- Publication number 20170330935
- Publication date Nov 16, 2017
- Samsung Electronics Co., Ltd.
- JINSEONG HEO
- H01 - BASIC ELECTRIC ELEMENTS

with a multilayer structure or superlattice structure

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Method of manufacturing a semiconductor device and a semiconductor...

Capping layer over FET FeRAM to increase charge mobility

Method for making an inverted T channel field effect transistor (IT...

Method of manufacturing a semiconductor device and a semiconductor...

Method for making semiconductor device including a superlattice wit...

Method of manufacturing a semiconductor device and a semiconductor...

Nonvolatile memory device including two-dimensional material and ap...

TFT structure based on flexible multi-layer graphene quantum carbon...

Varactor with hyper-abrupt junction region including a superlattice

Graphene FET devices, systems, and methods of using the same for se...

Field-effect transistor, display element, image display device, and...

Quantum dot devices with modulation doped stacks

Inverted T channel field effect transistor (ITFET) including a supe...

Strain compensation in transistors

Width adjustment of stacked nanowires

Field-effect transistors with a grown silicon-germanium channel

Layered structure and semiconductor device including layered structure

Thin film transistor substrate, and display panel and display devic...

Methods of forming strained-semiconductor-on-insulator device struc...

Semiconductor device with transition metal dichalocogenide hetero-s...

Semiconductor device

Strain compensation in transistors

Electronic device including 2-dimensional material

Strain compensation in transistors

Semiconductor device with transition metal dichalocogenide hetero-s...

Electronic device including side gate and two-dimensional material...

Semiconductor device, manufacturing method of the same, or display...

Semiconductor device having a field effect transistor formed on a s...

Transistor having germanium channel on silicon nanowire and fabrica...

Semiconductor structure with changeable gate length and method for...

Patents Applicationslast 30 patents

SEMICONDUCTOR DEVICE AND A METHOD OF MANUFACTURING THE SAME

METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE AND A SEMICONDUCTOR...

SEAM-TOP SEAL FOR DIELECTRICS

MULTI-LAYERED OR GRADED SEMICONDUCTOR REGION IN THIN FILM TRANSISTO...

CAPPING LAYER OVER FET FERAM TO INCREASE CHARGE MOBILITY

INTEGRATED INPUT OUTPUT AND LOGIC DEVICE FOR NANOSHEET TECHNOLOGY

ENRICHED SEMICONDUCTOR NANORIBBONS FOR PRODUCING INTRINSIC COMPRESS...

SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME

SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME

SELF-ALIGNED WIDE BACKSIDE POWER RAIL CONTACTS TO MULTIPLE TRANSIST...

TEMPLATE FOR NANOSHEET SOURCE DRAIN FORMATION WITH BOTTOM DIELECTRIC

SEMICONDUCTOR STRUCTURE AND FORMING METHOD THEREOF

METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE AND A SEMICONDUCTOR...

GRADIENT-DOPED SACRIFICIAL LAYERS IN INTEGRATED CIRCUIT STRUCTURES

METHOD FOR FORMING A SEMICONDUCTOR DEVICE

ARRAY SUBSTRATE, METHOD FOR FORMING ARRAY SUBSTRATE, AND DISPLAY DE...

METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE AND A SEMICONDUCTOR...

METHOD FOR MAKING SEMICONDUCTOR DEVICE INCLUDING A SUPERLATTICE WIT...

METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE AND A SEMICONDUCTOR...

QUANTUM DOT DEVICES WITH MODULATION DOPED STACKS

STRAIN COMPENSATION IN TRANSISTORS

METHOD FOR MAKING AN INVERTED T CHANNEL FIELD EFFECT TRANSISTOR (IT...

INVERTED T CHANNEL FIELD EFFECT TRANSISTOR (ITFET) INCLUDING A SUPE...

LAYERED STRUCTURE AND SEMICONDUCTOR DEVICE INCLUDING LAYERED STRUCTURE

GRAPHENE FET DEVICES, SYSTEMS, AND METHODS OF USING THE SAME FOR SE...

TFT STRUCTURE BASED ON FLEXIBLE MULTI-LAYER GRAPHENE QUANTUM CARBON...

STRAIN COMPENSATION IN TRANSISTORS

Semiconductor Device with Transition Metal Dichalocogenide Hetero-S...

FIELD-EFFECT TRANSISTOR, DISPLAY ELEMENT, IMAGE DISPLAY DEVICE, AND...

ELECTRONIC DEVICE INCLUDING SIDE GATE AND TWO-DIMENSIONAL MATERIAL...