with a non planar surface

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H01L29/7396

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

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H01L29/7396with a non planar surface

Industries

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Patents Grantslast 30 patents

Information Patent Grant
Method of manufacturing silicon carbide semiconductor devices
- Patent number 12,300,724
- Issue date May 13, 2025
- Infineon Technologies AG
- Andreas Meiser
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having a transistor with trenches and mesas
- Patent number 12,283,621
- Issue date Apr 22, 2025
- Infineon Technologies Austria AG
- Caspar Leendertz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method
- Patent number 12,218,228
- Issue date Feb 4, 2025
- Fuji Electric Co., Ltd.
- Koh Yoshikawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 12,159,928
- Issue date Dec 3, 2024
- Fuji Electric Co., Ltd.
- Shigeki Sato
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and system
- Patent number 12,094,960
- Issue date Sep 17, 2024
- Fuji Electric Co., Ltd.
- Shigeki Sato
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical semiconductor structure with integrated sampling structure...
- Patent number 12,046,664
- Issue date Jul 23, 2024
- WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD.
- Pengfei Jia
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including emitter regions and method of manufa...
- Patent number 12,034,065
- Issue date Jul 9, 2024
- Rohm Co., Ltd.
- Akihiro Hikasa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power semiconductor device having a barrier region
- Patent number 12,034,066
- Issue date Jul 9, 2024
- Infineon Technologies AG
- Antonio Vellei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 11,942,535
- Issue date Mar 26, 2024
- Fuji Electric Co., Ltd.
- Yosuke Sakurai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacturing semiconductor device
- Patent number 11,869,961
- Issue date Jan 9, 2024
- Fuji Electric Co., Ltd.
- Hiroshi Miyata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
IGBT chip having folded composite gate structure
- Patent number 11,848,375
- Issue date Dec 19, 2023
- ZHUZHOU CRRC TIMES ELECTRIC CO., LTD.
- Guoyou Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a semiconductor device having a bond wire o...
- Patent number 11,837,528
- Issue date Dec 5, 2023
- Infineon Technologies AG
- Anton Mauder
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power semiconductor switch having a cross-trench structure
- Patent number 11,610,986
- Issue date Mar 21, 2023
- Infineon Technologies AG
- Matteo Dainese
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including a transistor with one or more barrie...
- Patent number 11,610,976
- Issue date Mar 21, 2023
- Infineon Technologies Austria AG
- Caspar Leendertz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure and fabrication method thereof
- Patent number 11,605,735
- Issue date Mar 14, 2023
- Semiconductor Manufacturing International (Shanghai) Corporation
- Fei Zhou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of processing a power semiconductor device
- Patent number 11,594,621
- Issue date Feb 28, 2023
- Infineon Technologies AG
- Antonio Vellei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
IGBT with dV/dt controllability
- Patent number 11,581,428
- Issue date Feb 14, 2023
- Infineon Technologies AG
- Alexander Philippou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power semiconductor switch having a cross-trench structure
- Patent number 11,581,429
- Issue date Feb 14, 2023
- Infineon Technologies AG
- Matteo Dainese
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacturing the same
- Patent number 11,489,047
- Issue date Nov 1, 2022
- Renesas Electronics Corporation
- Yasuhiro Okamoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having a transistor cell region and a terminat...
- Patent number 11,462,620
- Issue date Oct 4, 2022
- Infineon Technologies Austria AG
- Ralf Siemieniec
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Insulated gate bipolar transistor and method of manufacturing same
- Patent number 11,430,880
- Issue date Aug 30, 2022
- DB HiTek, Co., Ltd.
- Young-Seok Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 11,309,310
- Issue date Apr 19, 2022
- Rohm Co., Ltd.
- Kohei Shinsho
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacturing semiconductor device
- Patent number 11,264,490
- Issue date Mar 1, 2022
- Fuji Electric Co., Ltd.
- Hiroshi Miyata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned and robust IGBT devices
- Patent number 11,239,352
- Issue date Feb 1, 2022
- iPower Semiconductor
- Hamza Yilmaz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned and robust IGBT devices
- Patent number 11,233,141
- Issue date Jan 25, 2022
- iPower Semiconductor
- Hamza Yilmaz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with a trench electrode provided inside a tren...
- Patent number 11,227,916
- Issue date Jan 18, 2022
- Renesas Electronics Corporation
- Ryo Kanda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated power semiconductor device and method for manufacturing...
- Patent number 11,222,890
- Issue date Jan 11, 2022
- University of Electronic Science and Technology of China
- Ming Qiao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having gate dielectric and inhibitor film over...
- Patent number 11,211,465
- Issue date Dec 28, 2021
- Taiwan Semiconductor Manufacturing Company Limited
- Mrunal A. Khaderbad
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method therefor
- Patent number 11,183,589
- Issue date Nov 23, 2021
- Renesas Electronics Corporation
- Nao Nagata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing silicon carbide semiconductor devices
- Patent number 11,177,354
- Issue date Nov 16, 2021
- Infineon Technologies AG
- Andreas Meiser
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
VERTICAL SEMICONDUCTOR STRUCTURE WITH INTEGRATED SAMPLING STRUCTURE...
- Publication number 20240088273
- Publication date Mar 14, 2024
- Wuxi China Resources Huajing Microelectronics Co., Ltd
- PENGFEI JIA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20230352371
- Publication date Nov 2, 2023
- Rohm Co., Ltd.
- Yuki NAKANO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INSULATED GATE BIPOLAR TRANSISTOR
- Publication number 20230207672
- Publication date Jun 29, 2023
- UNITED MICROELECTRONICS CORP.
- Hsin-Ming Hou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Power Semiconductor Device Having a Barrier Region
- Publication number 20230207673
- Publication date Jun 29, 2023
- INFINEON TECHNOLOGIES AG
- Antonio Vellei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE HAVING A TRANSISTOR WITH TRENCHES AND MESAS
- Publication number 20230197828
- Publication date Jun 22, 2023
- Infineon Technologies Austria AG
- Caspar Leendertz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20230155013
- Publication date May 18, 2023
- RENESAS ELECTRONICS CORPORATION
- Nao Nagata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Insulated Gate Bipolar Transistor
- Publication number 20220393023
- Publication date Dec 8, 2022
- Hitachi Energy Switzerland AG
- Florin Udrea
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
- Publication number 20220140121
- Publication date May 5, 2022
- Fuji Electric Co., Ltd.
- Hiroshi Miyata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND SYSTEM
- Publication number 20210384333
- Publication date Dec 9, 2021
- Fuji Electric Co., Ltd.
- Shigeki SATO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INSULATED GATE BIPOLAR TRANSISTOR AND METHOD OF MANUFACTURING SAME
- Publication number 20210384329
- Publication date Dec 9, 2021
- DB HITEK CO., LTD.
- Young-Seok KIM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD
- Publication number 20210384330
- Publication date Dec 9, 2021
- Fuji Electric Co., Ltd.
- Koh YOSHIKAWA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20210384331
- Publication date Dec 9, 2021
- Fuji Electric Co., Ltd.
- Shigeki SATO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20210384332
- Publication date Dec 9, 2021
- Fuji Electric Co., Ltd.
- Yosuke SAKURAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Power Semiconductor Switch Having a Cross-Trench Structure
- Publication number 20210313460
- Publication date Oct 7, 2021
- INFINEON TECHNOLOGIES AG
- Matteo Dainese
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE INCLUDING A TRANSISTOR WITH ONE OR MORE BARRIE...
- Publication number 20210134977
- Publication date May 6, 2021
- Caspar Leendertz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED POWER SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING...
- Publication number 20210074699
- Publication date Mar 11, 2021
- University of Electronic Science and Technology of China
- Ming QIAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of Processing a Power Semiconductor Device
- Publication number 20210050436
- Publication date Feb 18, 2021
- Antonio Vellei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND FABRICATION METHOD THEREOF
- Publication number 20210050440
- Publication date Feb 18, 2021
- Semiconductor Manufacturing International (Shanghai) Corporation
- FEI ZHOU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
IGBT with dV/dt Controllability
- Publication number 20210043759
- Publication date Feb 11, 2021
- INFINEON TECHNOLOGIES AG
- Alexander Philippou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
IGBT CHIP HAVING FOLDED COMPOSITE GATE STRUCTURE
- Publication number 20210013330
- Publication date Jan 14, 2021
- Guoyou Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Insulated Gate Bipolar Transistor Device Having a Fin Structure
- Publication number 20200350402
- Publication date Nov 5, 2020
- Christian Philipp Sandow
- B82 - NANO-TECHNOLOGY
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR
- Publication number 20200259005
- Publication date Aug 13, 2020
- RENESAS ELECTRONICS CORPORATION
- Nao Nagata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for Producing IGBT with dV/dt Controllability
- Publication number 20200235232
- Publication date Jul 23, 2020
- INFINEON TECHNOLOGIES AG
- Antonio Vellei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20200227405
- Publication date Jul 16, 2020
- ROHM CO., LTD.
- Kohei SHINSHO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SUPER JUNCTION MOS BIPOLAR TRANSISTOR AND PROCESS OF MANUFACTURE
- Publication number 20200203511
- Publication date Jun 25, 2020
- D3 Semiconductor LLC
- Thomas E. Harrington
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-ALIGNED AND ROBUST IGBT DEVICES
- Publication number 20200203514
- Publication date Jun 25, 2020
- IPOWER SEMICONDUCTOR
- HAMZA YILMAZ
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR APPARATUS
- Publication number 20200161479
- Publication date May 21, 2020
- Fuji Electric Co., Ltd.
- Takahiro TAMURA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of Manufacturing Silicon Carbide Semiconductor Devices
- Publication number 20200152743
- Publication date May 14, 2020
- Andreas Meiser
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH SIDEWALL PASSIVATION AND METHOD OF MAKING
- Publication number 20200119153
- Publication date Apr 16, 2020
- Taiwan Semiconductor Manufacturing Company Limited
- Mrunal A. KHADERBAD
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20200066888
- Publication date Feb 27, 2020
- RENESAS ELECTRONICS CORPORATION
- Nao Nagata
- H02 - GENERATION CONVERSION OR DISTRIBUTION OF ELECTRIC POWER

with a non planar surface

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Method of manufacturing silicon carbide semiconductor devices

Semiconductor device having a transistor with trenches and mesas

Semiconductor device and manufacturing method

Semiconductor device

Semiconductor device and system

Vertical semiconductor structure with integrated sampling structure...

Semiconductor device including emitter regions and method of manufa...

Power semiconductor device having a barrier region

Semiconductor device

Semiconductor device and method of manufacturing semiconductor device

IGBT chip having folded composite gate structure

Method of manufacturing a semiconductor device having a bond wire o...

Power semiconductor switch having a cross-trench structure

Semiconductor device including a transistor with one or more barrie...

Semiconductor structure and fabrication method thereof

Method of processing a power semiconductor device

IGBT with dV/dt controllability

Power semiconductor switch having a cross-trench structure

Semiconductor device and method of manufacturing the same

Semiconductor device having a transistor cell region and a terminat...

Insulated gate bipolar transistor and method of manufacturing same

Semiconductor device

Semiconductor device and method of manufacturing semiconductor device

Self-aligned and robust IGBT devices

Self-aligned and robust IGBT devices

Semiconductor device with a trench electrode provided inside a tren...

Integrated power semiconductor device and method for manufacturing...

Semiconductor device having gate dielectric and inhibitor film over...

Semiconductor device and manufacturing method therefor

Method of manufacturing silicon carbide semiconductor devices

Patents Applicationslast 30 patents

VERTICAL SEMICONDUCTOR STRUCTURE WITH INTEGRATED SAMPLING STRUCTURE...

SEMICONDUCTOR DEVICE

INSULATED GATE BIPOLAR TRANSISTOR

Power Semiconductor Device Having a Barrier Region

SEMICONDUCTOR DEVICE HAVING A TRANSISTOR WITH TRENCHES AND MESAS

SEMICONDUCTOR DEVICE

Insulated Gate Bipolar Transistor

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE AND SYSTEM

INSULATED GATE BIPOLAR TRANSISTOR AND METHOD OF MANUFACTURING SAME

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD

SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE

Power Semiconductor Switch Having a Cross-Trench Structure

SEMICONDUCTOR DEVICE INCLUDING A TRANSISTOR WITH ONE OR MORE BARRIE...

INTEGRATED POWER SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING...

Method of Processing a Power Semiconductor Device

SEMICONDUCTOR STRUCTURE AND FABRICATION METHOD THEREOF

IGBT with dV/dt Controllability

IGBT CHIP HAVING FOLDED COMPOSITE GATE STRUCTURE

Insulated Gate Bipolar Transistor Device Having a Fin Structure

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR

Method for Producing IGBT with dV/dt Controllability

SEMICONDUCTOR DEVICE

SUPER JUNCTION MOS BIPOLAR TRANSISTOR AND PROCESS OF MANUFACTURE

SELF-ALIGNED AND ROBUST IGBT DEVICES

SEMICONDUCTOR APPARATUS

Method of Manufacturing Silicon Carbide Semiconductor Devices

SEMICONDUCTOR DEVICE WITH SIDEWALL PASSIVATION AND METHOD OF MAKING

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME