with a particular manufacturing method of the gate conductors

Industry

CPC
H01L21/823437

This industry / category may be too specific. Please go to a parent level for more data

Parent Industries

HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

Current Industry

H01L21/823437with a particular manufacturing method of the gate conductors

Industries

Patents Grantslast 30 patents

Information Patent Grant
Nano-sheet-based devices having inner spacer structures or gate por...
- Patent number 12,148,812
- Issue date Nov 19, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Jui-Chien Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor integrated circuit device and method of manufacturing...
- Patent number 12,142,606
- Issue date Nov 12, 2024
- SOCIONEXT INC.
- Junji Iwahori
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Contact over active gate structures for advanced integrated circuit...
- Patent number 12,142,667
- Issue date Nov 12, 2024
- Intel Corporation
- Andrew W. Yeoh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming semiconductor device structure with gate and res...
- Patent number 12,136,572
- Issue date Nov 5, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chai-Wei Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High voltage three-dimensional devices having dielectric liners
- Patent number 12,136,628
- Issue date Nov 5, 2024
- Intel Corporation
- Walid M. Hafez
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for fabricating FinFETs having different fin numbers and co...
- Patent number 12,136,571
- Issue date Nov 5, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Jhon Jhy Liaw
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure cutting process and structures formed thereby
- Patent number 12,132,050
- Issue date Oct 29, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Ryan Chia-Jen Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device structure with metal gate stack
- Patent number 12,132,096
- Issue date Oct 29, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Xusheng Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for fabricating the same
- Patent number 12,125,750
- Issue date Oct 22, 2024
- Samsung Electronics Co., Ltd.
- Sang Hyun Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of modulating stress of dielectric layers
- Patent number 12,125,911
- Issue date Oct 22, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chung-Ting Ko
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-layered insulating film stack
- Patent number 12,119,268
- Issue date Oct 15, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chieh-Ping Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Array of vertical transistors having channel regions connected by a...
- Patent number 12,119,269
- Issue date Oct 15, 2024
- Micron Technology, Inc.
- Deepak Chandra Pandey
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Atomic layer deposition of barrier metal layer for electrode of gal...
- Patent number 12,112,983
- Issue date Oct 8, 2024
- MACOM Technology Solutions Holdings, Inc.
- Timothy E. Boles
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate electrode having a work-function layer including materials wit...
- Patent number 12,113,120
- Issue date Oct 8, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Ru-Shang Hsiao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High resistance poly resistor
- Patent number 12,107,117
- Issue date Oct 1, 2024
- Texas Instruments Incorporated
- Mahalingam Nandakumar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming fin field effect transistor device structure
- Patent number 12,107,012
- Issue date Oct 1, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Shang-Wen Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate-all-around devices having self-aligned capping between channel...
- Patent number 12,107,131
- Issue date Oct 1, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chung-Wei Hsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and fabrication method thereof
- Patent number 12,107,134
- Issue date Oct 1, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Cheng-Ming Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Decoupling capacitor circuits
- Patent number 12,101,091
- Issue date Sep 24, 2024
- Taiwan Semiconductor Manufacturing Company Ltd.
- Szu-Lin Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Techniques and configurations to reduce transistor gate short defects
- Patent number 12,094,780
- Issue date Sep 17, 2024
- Intel Corporation
- Sridhar Govindaraju
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Method for manufacturing semiconductor device
- Patent number 12,094,784
- Issue date Sep 17, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chung-Ting Ko
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory and method for forming same
- Patent number 12,089,393
- Issue date Sep 10, 2024
- CHANGXIN MEMORY TECHNOLOGIES, INC.
- Qu Luo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for manufacturing the same
- Patent number 12,087,857
- Issue date Sep 10, 2024
- CHANGXIN MEMORY TECHNOLOGIES, INC.
- Yukun Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-channel devices and methods of manufacture
- Patent number 12,087,638
- Issue date Sep 10, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Shih-Yao Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuitry, memory arrays comprising strings of memory ce...
- Patent number 12,087,632
- Issue date Sep 10, 2024
- Micron Technology, Inc.
- Corey Staller
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin field-effect transistor devices and methods of forming the same
- Patent number 12,087,639
- Issue date Sep 10, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chih-Chang Hung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor structure
- Patent number 12,087,635
- Issue date Sep 10, 2024
- United Microelectronics Corp.
- Shih-Yin Hsiao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Backside contacts for semiconductor devices
- Patent number 12,080,605
- Issue date Sep 3, 2024
- Intel Corporation
- Aaron D. Lilak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure and fabrication method thereof
- Patent number 12,074,163
- Issue date Aug 27, 2024
- Semiconductor Manufacturing International (Shanghai) Corporation
- Wu Feng Deng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate cut with integrated etch stop layer
- Patent number 12,074,165
- Issue date Aug 27, 2024
- TESSERA LLC
- Marc A. Bergendahl
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR DEVICE STRUCTURE WITH METAL GATE STACK
- Publication number 20240387691
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Xusheng Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device and Method
- Publication number 20240387280
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Ya-Yi Tsai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
- Publication number 20240387285
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chung-Ting KO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEAM-FILLING OF METAL GATES WITH SI-CONTAINING LAYERS
- Publication number 20240387647
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Hsin-Yi Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MODULATING STRESS OF DIELECTRIC LAYERS
- Publication number 20240387729
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chung-Ting Ko
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Alignment Structure for Semiconductor Device and Method of Forming...
- Publication number 20240387397
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chi-Sheng Lai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE-ALL-AROUND DEVICES HAVING SELF-ALIGNED CAPPING BETWEEN CHANNEL...
- Publication number 20240379782
- Publication date Nov 14, 2024
- Taiwan Semiconductor Manufacturing Co., LTD
- Chung-Wei Hsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES
- Publication number 20240379364
- Publication date Nov 14, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Yu-Jiun Peng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ELECTRONIC DEVICES AND SYSTEMS INCLUDING CAPACITORS
- Publication number 20240381631
- Publication date Nov 14, 2024
- Micron Technology, Inc.
- Kunal R. Parekh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Transistor Gate Profile Optimization
- Publication number 20240379672
- Publication date Nov 14, 2024
- Taiwan Semiconductor Manufacturing Co., LTD
- Chi-Sheng Lai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELECTIVE ETCHING TO INCREASE THRESHOLD VOLTAGE SPREAD
- Publication number 20240379776
- Publication date Nov 14, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Hsin-Yi Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods for Fabricating FinFETs Having Different Fin Numbers and Co...
- Publication number 20240379445
- Publication date Nov 14, 2024
- Taiwan Semiconductor Manufacturing Co., LTD
- Jhon Jhy Liaw
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FORMING SEMICONDUCTOR DEVICE STRUCTURE WITH GATE AND RES...
- Publication number 20240371698
- Publication date Nov 7, 2024
- Taiwan Semiconductor Manfacturing Co., Ltd.
- Chai-Wei Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIN FIELD-EFFECT TRANSISTOR DEVICE AND METHOD OF FORMING THE SAME
- Publication number 20240371644
- Publication date Nov 7, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Shih-Yao Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Structure Cutting Process and Structures Formed Thereby
- Publication number 20240371869
- Publication date Nov 7, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Ryan Chia-Jen Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BACKSIDE CONTACTS FOR SEMICONDUCTOR DEVICES
- Publication number 20240371700
- Publication date Nov 7, 2024
- Intel Corporation
- Aaron D. LILAK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTI-CHANNEL DEVICES AND METHODS OF MANUFACTURE
- Publication number 20240363425
- Publication date Oct 31, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Shih-Yao Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEAL RING STRUCTURE FOR MULTI-GATE DEVICE AND THE METHOD THEREOF
- Publication number 20240363553
- Publication date Oct 31, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chun Yu Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIN FIELD-EFFECT TRANSISTOR DEVICES AND METHODS OF FORMING THE SAME
- Publication number 20240363431
- Publication date Oct 31, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chih-Chang Hung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
P-Type FiNFET as a Radio-Frequency Device and Method Forming Same
- Publication number 20240363734
- Publication date Oct 31, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Ru-Shang Hsiao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES
- Publication number 20240363427
- Publication date Oct 31, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Shih-Chieh Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PROFILE CONTROL OF A GAP FILL STRUCTURE
- Publication number 20240363423
- Publication date Oct 31, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Wan-Yao Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH FUNNEL SHAPE SPACER AND METHODS OF FORMIN...
- Publication number 20240363426
- Publication date Oct 31, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Cheng-Yu Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE STRUCTURE AND METHODS OF FORMING THE SAME
- Publication number 20240355904
- Publication date Oct 24, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jung-Chien CHENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF FORMING GATE-ALL-AROUND (GAA) DEVICES
- Publication number 20240355896
- Publication date Oct 24, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Shien-Yang Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-ALIGNED GATE ENDCAP (SAGE) ARCHITECTURES WITH GATE-ALL-AROUND...
- Publication number 20240355903
- Publication date Oct 24, 2024
- Intel Corporation
- Biswajeet GUHA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NON-VOLATILE MEMORY DEVICE WITH REDUCED AREA
- Publication number 20240357804
- Publication date Oct 24, 2024
- Taiwan Semiconductor Manufacturing company Ltd.
- MENG-SHENG CHANG
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
SEMICONDUCTOR DEVICE HAVING CUT METAL GATE
- Publication number 20240347347
- Publication date Oct 17, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Shahaji B. MORE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONTACT OVER ACTIVE GATE STRUCTURES WITH ETCH STOP LAYERS FOR ADVAN...
- Publication number 20240347465
- Publication date Oct 17, 2024
- Intel Corporation
- Atul MADHAVAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT CONTAINING A DECOY STRUCTURE
- Publication number 20240347481
- Publication date Oct 17, 2024
- STMicroelectronics (Rousset) SAS
- Julien Delalleau
- H01 - BASIC ELECTRIC ELEMENTS

with a particular manufacturing method of the gate conductors

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Nano-sheet-based devices having inner spacer structures or gate por...

Semiconductor integrated circuit device and method of manufacturing...

Contact over active gate structures for advanced integrated circuit...

Method for forming semiconductor device structure with gate and res...

High voltage three-dimensional devices having dielectric liners

Methods for fabricating FinFETs having different fin numbers and co...

Semiconductor structure cutting process and structures formed thereby

Semiconductor device structure with metal gate stack

Semiconductor device and method for fabricating the same

Method of modulating stress of dielectric layers

Multi-layered insulating film stack

Array of vertical transistors having channel regions connected by a...

Atomic layer deposition of barrier metal layer for electrode of gal...

Gate electrode having a work-function layer including materials wit...

High resistance poly resistor

Method for forming fin field effect transistor device structure

Gate-all-around devices having self-aligned capping between channel...

Semiconductor device and fabrication method thereof

Decoupling capacitor circuits

Techniques and configurations to reduce transistor gate short defects

Method for manufacturing semiconductor device

Memory and method for forming same

Semiconductor device and method for manufacturing the same

Multi-channel devices and methods of manufacture

Integrated circuitry, memory arrays comprising strings of memory ce...

Fin field-effect transistor devices and methods of forming the same

Transistor structure

Backside contacts for semiconductor devices

Semiconductor structure and fabrication method thereof

Gate cut with integrated etch stop layer

Patents Applicationslast 30 patents

SEMICONDUCTOR DEVICE STRUCTURE WITH METAL GATE STACK

Semiconductor Device and Method

METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

SEAM-FILLING OF METAL GATES WITH SI-CONTAINING LAYERS

METHOD OF MODULATING STRESS OF DIELECTRIC LAYERS

Alignment Structure for Semiconductor Device and Method of Forming...

GATE-ALL-AROUND DEVICES HAVING SELF-ALIGNED CAPPING BETWEEN CHANNEL...

SEMICONDUCTOR DEVICES

ELECTRONIC DEVICES AND SYSTEMS INCLUDING CAPACITORS

Transistor Gate Profile Optimization

SELECTIVE ETCHING TO INCREASE THRESHOLD VOLTAGE SPREAD

Methods for Fabricating FinFETs Having Different Fin Numbers and Co...

METHOD FOR FORMING SEMICONDUCTOR DEVICE STRUCTURE WITH GATE AND RES...

FIN FIELD-EFFECT TRANSISTOR DEVICE AND METHOD OF FORMING THE SAME

Semiconductor Structure Cutting Process and Structures Formed Thereby

BACKSIDE CONTACTS FOR SEMICONDUCTOR DEVICES

MULTI-CHANNEL DEVICES AND METHODS OF MANUFACTURE

SEAL RING STRUCTURE FOR MULTI-GATE DEVICE AND THE METHOD THEREOF

FIN FIELD-EFFECT TRANSISTOR DEVICES AND METHODS OF FORMING THE SAME

P-Type FiNFET as a Radio-Frequency Device and Method Forming Same

SEMICONDUCTOR DEVICES

PROFILE CONTROL OF A GAP FILL STRUCTURE

SEMICONDUCTOR DEVICE WITH FUNNEL SHAPE SPACER AND METHODS OF FORMIN...

SEMICONDUCTOR DEVICE STRUCTURE AND METHODS OF FORMING THE SAME

METHODS OF FORMING GATE-ALL-AROUND (GAA) DEVICES

SELF-ALIGNED GATE ENDCAP (SAGE) ARCHITECTURES WITH GATE-ALL-AROUND...

NON-VOLATILE MEMORY DEVICE WITH REDUCED AREA

SEMICONDUCTOR DEVICE HAVING CUT METAL GATE

CONTACT OVER ACTIVE GATE STRUCTURES WITH ETCH STOP LAYERS FOR ADVAN...

INTEGRATED CIRCUIT CONTAINING A DECOY STRUCTURE