with a plurality of successive local oxidation steps

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H01L21/76221

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

Current Industry

H01L21/76221with a plurality of successive local oxidation steps

Industries

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Patents Grantslast 30 patents

Information Patent Grant
High voltage device and manufacturing method thereof
- Patent number 12,062,570
- Issue date Aug 13, 2024
- Richtek Technology Corporation
- Kun-Huang Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including capacitor
- Patent number 11,764,283
- Issue date Sep 19, 2023
- Samsung Electronics Co., Ltd.
- Sunmin Moon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including capacitor
- Patent number 11,621,339
- Issue date Apr 4, 2023
- Samsung Electronics Co., Ltd.
- Sunmin Moon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including capacitor
- Patent number 11,114,541
- Issue date Sep 7, 2021
- Samsung Electronics Co., Ltd.
- Sunmin Moon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 10,892,345
- Issue date Jan 12, 2021
- Samsung Electronics Co., Ltd.
- Sunmin Moon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing a semiconductor device
- Patent number 10,777,569
- Issue date Sep 15, 2020
- Renesas Electronics Corporation
- Yuto Omizu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor die, integrated circuits and driver circuits, and met...
- Patent number 9,570,437
- Issue date Feb 14, 2017
- NXP B.V.
- Priscilla Boos
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin structure of semiconductor device
- Patent number 9,536,772
- Issue date Jan 3, 2017
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chung-Hsien Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned emitter-base region
- Patent number 9,276,093
- Issue date Mar 1, 2016
- GLOBALFOUNDRIES, INC.
- Margaret A. Faucher
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing semiconductor device having element isolat...
- Patent number 8,785,290
- Issue date Jul 22, 2014
- Canon Kabushiki Kaisha
- Hiroaki Naruse
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a semiconductor device
- Patent number 7,135,417
- Issue date Nov 14, 2006
- Micron Technology, Inc.
- Randhir P. Thakur
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing semiconductor device having multiple gate o...
- Patent number 7,129,137
- Issue date Oct 31, 2006
- NEC Corporation
- Hiroki Matsumoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Isolation structure having trench structures formed on both side of...
- Patent number 6,809,395
- Issue date Oct 26, 2004
- Micron Technology, Inc.
- Fernando Gonzales
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for creating a lateral overflow drain, anti-blooming structu...
- Patent number 6,794,219
- Issue date Sep 21, 2004
- Eastman Kodak Company
- Eric G. Stevens
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of providing an oxide
- Patent number 6,589,877
- Issue date Jul 8, 2003
- Micron Technology, Inc.
- Randhir P. Thakur
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device manufacturing method including forming FOX wit...
- Patent number 6,579,769
- Issue date Jun 17, 2003
- Fujitsu Ltd.
- Hiroyuki Shimada
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for manufacturing the same that inc...
- Patent number 6,495,431
- Issue date Dec 17, 2002
- NEC Corporation
- Tomokazu Matsuzaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and process of manufacturing the same
- Patent number 6,492,696
- Issue date Dec 10, 2002
- Sharp Kabushiki Kaisha
- Hidenori Morimoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a semiconductor device
- Patent number 6,475,927
- Issue date Nov 5, 2002
- Micron Technology, Inc.
- Randhir P. Thakur
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for differential trenching in conjunction with differential...
- Patent number 6,440,819
- Issue date Aug 27, 2002
- Advanced Micro Devices, Inc.
- Scott Luning
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming an isolation region in a semiconductor device an...
- Patent number 6,420,241
- Issue date Jul 16, 2002
- Hyundai Electronics Industries Co., Ltd.
- Se Aug Jang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a vertical-channel MOSFET
- Patent number 6,362,025
- Issue date Mar 26, 2002
- STMicroelectronics S.r.l.
- Davide Patti
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having oxide layers formed with different thic...
- Patent number 6,291,851
- Issue date Sep 18, 2001
- Rohm Co., Ltd.
- Yuji Matsumoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device fabrication method
- Patent number 6,281,065
- Issue date Aug 28, 2001
- NEC Corporation
- Masaru Ushiroda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Planarization of LOCOS through recessed reoxidation techniques
- Patent number 6,265,286
- Issue date Jul 24, 2001
- Texas Instruments Incorporated
- Michelle A. Boyer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating field oxide
- Patent number 6,261,926
- Issue date Jul 17, 2001
- Mosel Vitelic, Inc.
- Wei-Shang King
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating an isolation structure in an integrated circuit
- Patent number 6,255,191
- Issue date Jul 3, 2001
- United Microelectronics Corp.
- Jing-Horng Gau
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device manufacturing method including various oxidati...
- Patent number 6,187,640
- Issue date Feb 13, 2001
- Fujitsu Limited
- Hiroyuki Shimada
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor chip having fieldless array with salicide gates and m...
- Patent number 6,174,758
- Issue date Jan 16, 2001
- Tower Semiconductor Ltd.
- Ishai Nachumovsky
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Isotropic polysilicon plus nitride stripping
- Patent number 6,110,838
- Issue date Aug 29, 2000
- Texas Instruments Incorporated
- Lee M. Loewenstein
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
HIGH VOLTAGE DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20240297067
- Publication date Sep 5, 2024
- RICHTEK TECHNOLOGY CORPORATION
- Kun-Huang Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FABRICATING SEMICONDUCTOR DEVICE WITH PRE-CLEANING TREAT...
- Publication number 20230317508
- Publication date Oct 5, 2023
- NANYA TECHNOLOGY CORPORATION
- WEI-CHEN PAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE AND LOCOS DIELECTRICS GROWN USING LOCOS PROCESSING
- Publication number 20230245919
- Publication date Aug 3, 2023
- TEXAS INSTRUMENTS INCORPORATED
- Mark Francis Arendt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT DEVICE WITH IMPROVED OXIDE EDGING
- Publication number 20230135889
- Publication date May 4, 2023
- TEXAS INSTRUMENTS INCORPORATED
- Abbas Ali
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE INCLUDING CAPACITOR
- Publication number 20220238691
- Publication date Jul 28, 2022
- Samsung Electronics Co., Ltd.
- Sunmin MOON
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH VOLTAGE DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20220223464
- Publication date Jul 14, 2022
- RICHTEK TECHNOLOGY CORPORATION
- Kun-Huang Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE INCLUDING CAPACITOR
- Publication number 20210359102
- Publication date Nov 18, 2021
- Samsung Electronics Co., Ltd.
- Sunmin MOON
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE INCLUDING CAPACITOR
- Publication number 20210013319
- Publication date Jan 14, 2021
- Samsung Electronics Co., Ltd.
- Sunmin MOON
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE
- Publication number 20190363095
- Publication date Nov 28, 2019
- RENESAS ELECTRONICS CORPORATION
- Yuto OMIZU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20190013391
- Publication date Jan 10, 2019
- Samsung Electronics Co., Ltd.
- Sunmin MOON
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Fin Structure of Semiconductor Device
- Publication number 20150311111
- Publication date Oct 29, 2015
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chung-Hsien Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Fin Structure of Semiconductor Device
- Publication number 20140361336
- Publication date Dec 11, 2014
- Chung-Hsien Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20140203365
- Publication date Jul 24, 2014
- NXP B.V.
- Priscilla Boos
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-ALIGNED EMITTER-BASE REGION
- Publication number 20130207235
- Publication date Aug 15, 2013
- International Business Machines Corporation
- Margaret A. Faucher
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20130200485
- Publication date Aug 8, 2013
- Canon Kabushiki Kaisha
- Hiroaki Naruse
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING A SEMICONDUCTOR DEVICE
- Publication number 20070087506
- Publication date Apr 19, 2007
- Micron Technology, Inc.
- Randhir P. Thakur
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING A SEMICONDUCTOR DEVICE
- Publication number 20070087505
- Publication date Apr 19, 2007
- Micron Technology, Inc.
- Randhir P. Thakur
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOCOS trench isolation structures
- Publication number 20060231902
- Publication date Oct 19, 2006
- Fernando Gonzalez
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of manufacturing semiconductor device having multiple gate o...
- Publication number 20050266644
- Publication date Dec 1, 2005
- NEC Electronics Corporation
- Hiroki Matsumoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Locos trench isolation structure
- Publication number 20050012158
- Publication date Jan 20, 2005
- Micron Technology, Inc.
- Fernando Gonzalez
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of forming a semiconductor device
- Publication number 20020119674
- Publication date Aug 29, 2002
- Randhir P. Thakur
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and method for manufacturing the same
- Publication number 20020053713
- Publication date May 9, 2002
- Tomokazu Matsuzaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and process of manufacturing the same
- Publication number 20010039092
- Publication date Nov 8, 2001
- Hidenori Morimoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of fabricating an isolation structure in an integrated circuit
- Publication number 20010026993
- Publication date Oct 4, 2001
- Jing-Horng Gau
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FORMING AN ISOLATION REGION IN A SEMICONDUCTOR DEVICE AN...
- Publication number 20010014506
- Publication date Aug 16, 2001
- SE AUG JANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device manufacturing method
- Publication number 20010000247
- Publication date Apr 12, 2001
- FUJITSU LIMITED, ADVANCED MICRO DEVICES, INC.
- Hiroyuki Shimada
- H01 - BASIC ELECTRIC ELEMENTS

with a plurality of successive local oxidation steps

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

High voltage device and manufacturing method thereof

Semiconductor device including capacitor

Semiconductor device including capacitor

Semiconductor device including capacitor

Semiconductor device

Method for manufacturing a semiconductor device

Semiconductor die, integrated circuits and driver circuits, and met...

Fin structure of semiconductor device

Self-aligned emitter-base region

Method for manufacturing semiconductor device having element isolat...

Method of forming a semiconductor device

Method of manufacturing semiconductor device having multiple gate o...

Isolation structure having trench structures formed on both side of...

Method for creating a lateral overflow drain, anti-blooming structu...

Method of providing an oxide

Semiconductor device manufacturing method including forming FOX wit...

Semiconductor device and method for manufacturing the same that inc...

Semiconductor device and process of manufacturing the same

Method of forming a semiconductor device

Method for differential trenching in conjunction with differential...

Method for forming an isolation region in a semiconductor device an...

Method of manufacturing a vertical-channel MOSFET

Semiconductor device having oxide layers formed with different thic...

Semiconductor device fabrication method

Planarization of LOCOS through recessed reoxidation techniques

Method for fabricating field oxide

Method of fabricating an isolation structure in an integrated circuit

Semiconductor device manufacturing method including various oxidati...

Semiconductor chip having fieldless array with salicide gates and m...

Isotropic polysilicon plus nitride stripping

Patents Applicationslast 30 patents

HIGH VOLTAGE DEVICE AND MANUFACTURING METHOD THEREOF

METHOD FOR FABRICATING SEMICONDUCTOR DEVICE WITH PRE-CLEANING TREAT...

GATE AND LOCOS DIELECTRICS GROWN USING LOCOS PROCESSING

INTEGRATED CIRCUIT DEVICE WITH IMPROVED OXIDE EDGING

SEMICONDUCTOR DEVICE INCLUDING CAPACITOR

HIGH VOLTAGE DEVICE AND MANUFACTURING METHOD THEREOF

SEMICONDUCTOR DEVICE INCLUDING CAPACITOR

SEMICONDUCTOR DEVICE INCLUDING CAPACITOR

METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE

Fin Structure of Semiconductor Device

Fin Structure of Semiconductor Device

SEMICONDUCTOR DEVICE

SELF-ALIGNED EMITTER-BASE REGION

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

METHOD OF FORMING A SEMICONDUCTOR DEVICE

METHOD OF FORMING A SEMICONDUCTOR DEVICE

LOCOS trench isolation structures

Method of manufacturing semiconductor device having multiple gate o...

Locos trench isolation structure

Method of forming a semiconductor device

Semiconductor device and method for manufacturing the same

Semiconductor device and process of manufacturing the same

Method of fabricating an isolation structure in an integrated circuit

METHOD FOR FORMING AN ISOLATION REGION IN A SEMICONDUCTOR DEVICE AN...

Semiconductor device manufacturing method